www.eicsemi.com R2G AVALANCHE DIODE D2 VRM : 115 Volts IZSM : 1.0 Amp. ( 100 µs ) FEATURES : * * * * * * 1.00 (25.4) MIN. 0.161 (4.1) 0.154 (3.9) High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Pb / RoHS Free 0.284 (7.2) 0.268 (6.8) 1.00 (25.4) MIN. 0.034 (0.86) 0.028 (0.71) MECHANICAL DATA : * Case : D2 Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.465 gram Dimensions in inches and ( millimeters ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. RATING SYMBOL VALUE UNIT Maximum Peak Reverse Voltage VRM 115 V Maximum DC Blocking Reverse Voltage VDC 115 V Minimum Avalanche Breakdown Voltage at IZ = 1mA VBR(min) 120 V Maximum Avalanche Breakdown Voltage at IZ = 1mA VBR(max) 145 V IZSM 1.0 A Maximum Allowable Avalanche Current (Note 1) Maximum Reverse Current at VRM Ta = 25°C IR 10 µA Maximum Reverse Current at VRM Ta = 100°C IR(H) 50 µA +0.15 V/°C Typical Avalanche Voltage Temperature Coefficient at Iz = 1mA Junction Temperature Range TJ - 40 to + 130 °C Storage Temperature Range TSTG - 40 to + 150 °C Notes : (1) 100µs Square pulse, One shot. Page 1 of 2 Rev. 02 : March 25, 2005 www.eicsemi.com RATING AND CHARACTERISTIC CURVES ( R2G ) V R(DC) - Ta Characteristic DC Blocking Reverse Voltage, VRDC (V) 120 115 110 105.25 105 -40 25 0 50 75 100 125 130 Ambient Temperature Ta ( °C) V Z Temperature Coefficient Avalanche Voltage, VZ (V) 170 160.75 160 150 max. 140 135.75 135.25 130 min. 120 V RDC Temperature Characteristics 110.25 110 105.25 105 -40 0 25 50 75 100 125 130 Ambient Temperature Ta ( °C) Page 2 of 2 Rev. 02 : March 25, 2005