1ss166 : schottky barrier diodes

TH97/10561QM
1SS166
TW00/17276EM
IATF 0060636
SGS TH07/1033
SCHOTTKY BARRIER DIODE
DO - 34 Glass
FEATURES :
• Low forward voltage
• High breakdown voltage
• Low diode capacitance.
• Pb / RoHS Free
1.00 (25.4)
min.
0.078 (2.0 )max.
0.118 (3.0)
max.
Cathode
Mark
MECHANICAL DATA :
Case: DO-34 Glass Case
Weight: approx. 0.11g
1.00 (25.4)
min.
0.017 (0.43)max.
Dimensions in inches and ( millimeters )
Maximum Ratings and Thermal Characteristics (Rating at 25 °C ambient temperature unless otherwise specified.)
Parameter
Symbol
Value
Unit
Reverse Voltage
VR
10
V
Average Rectified Current
Io
15
mA
Power Dissipation
PD
150
mW
Junction Temperature
TJ
100
°C
Storage temperature range
Tstg
-55 to + 100
°C
Note: (1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature.
Electrical Characteristics
Parameter
(TJ = 25°C unless otherwise noted)
Symbol
Test Condition
Min
Typ
Max
Unit
VR = 10 V
-
-
10
μA
VR = 2 V
-
-
0.2
μA
IF = 1 mA
365
-
430
mV
IF = 10 mA
520
-
600
mV
Reverse Current
IR
Forward Voltage
VF
Diode Capacitance
Cd
VR = 0V, f = 1MHz
-
-
1.2
pF
Forward Voltage Deviation
∆VF
IF = 10 mA
-
-
±5
mV
Page 1 of 2
Rev. 03 : December 3, 2008
TH97/10561QM
TW00/17276EM
IATF 0060636
SGS TH07/1033
RATING AND CHARACTERISTIC CURVES ( 1SS166 )
Forward Current VS. Forward Voltage
Reverse Current VS. Reverse Voltage
100
100
Reverse Current , IR (µA)
Forward Current , IF (mA)
10
1.0
0.1
0.01
10
1.0
0.1
0.01
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
0.001
Forward Voltage , VF (V)
0
5
10
15
20
25
30
Reverse Voltage , VR (V)
Diode capacitance VS. Reverse Voltage
Diode Capacitance , Cd (pF)
1.2
1.0
0.8
0.6
0.4
0.2
0.1
0.4 0.8
1.2 1.6
2.0
2.4
2.8
3.2
3.6
4.0 4.4
Reverse Voltage , VR (V)
Page 2 of 2
Rev. 03 : December 3, 2008