SYNSEMI LL4448

LL4448
HIGH SPEED SWITCHING DIODE
MiniMELF (SOD-80C)
Cathode Mark
FEATURES :
φ 0.063 (1.64)
• High switching speed: max. 4 ns
• Reverse voltage:max. 75V
• Peak reverse voltage:max. 100 V
• Pb / RoHS Free
0.055 (1.40)
0.019(0.48)
0.011(0.28)
0.142(3.6)
0.134(3.4)
Mounting Pad Layout
0.098 (2.50)
Max.
0.049 (1.25)Min.
MECHANICAL DATA :
Case: MiniMELF Glass Case (SOD-80)
Weight: approx. 0.05g
0.079 (2.00)Min.
0.197 (5.00)
REF
Dimensions in inches and ( millimeters )
Maximum Ratings and Thermal Characteristics (Rating at
25 °C ambient temperature unless otherwise specified.)
Parameter
Symbol
Value
Unit
Maximum Peak Reverse Voltage
VRM
100
V
Maximum Reverse Voltage
VR
75
V
Maximum Continuous Forward Current
IF
200
mA
IF(AV)
150
mA
IFSM
0.5
A
PD
500
mW
Maximum Average Forward Current (1)
Half Wave Rectification with Resistive Load , f ≥ 50 Hz
Maximum Surge Forward Current at t < 1s , Tj = 25°C
Maximum Power Dissipation
(1)
RθJA
350
°C/W
Maximum Junction Temperature
TJ
175
°C
Storage Temperature Range
TS
-65 to + 175
°C
Thermal Resistance Junction to Ambient Air
(1)
Note : (1) Valid provided that electrodes are kept at ambient temperature
Electrical Characteristics (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Reverse Current
IR
VR = 20 V
VR = 75 V
Forward Voltage
VF
VR = 20 V , Tj = 150 °C
IF = 100 mA
Diode Capacitance
Cd
f = 1MHz ; VR = 0
Reverse Recovery Time
Trr
Page 1 of 2
IF = 10 mA to IR = 1mA
VR = 6V , RL = 100 Ω
Min.
Typ.
Max.
Unit
-
-
25
5
50
nA
µA
µA
-
-
1.0
V
-
-
4.0
pF
-
-
4.0
ns
Rev. 02 : March 25, 2005
RATING AND CHARACTERISTIC CURVES ( LL4448 )
FIG. 1 MAXIMUM FORWARD CURRENT
VERSUS AMBIENT TEMPERATURE
FIG. 2 TYPICAL FORWARD VOLTAGE
1000
Forward Current , IF (mA)
AVERAGE FORWARD OUTPUT
CURRENT, mA
200
150
100
100
10
TJ = 25°C
1
50
0.1
0
0.01
0
100
200
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Forward Voltage , VF (V)
Ambient Temperature , Ta (°C)
FIG. 3 TYPICAL DIODE CAPACITANCE AS
A FUNCTION OF REVERSE VOLTAGE
FIG. 4 TYPICAL REVERSE CURRENT
VERSUS JUNCTION TEMPERATURE
104
1.2
Reverse Current , IR (nA)
Diode Capacitance , Cd (pF)
1.0
0.9
0.8
0.7
f = 1MHz;
TJ = 25°C
0.6
10
3
102
VR = 20V
10
0.5
1
0.4
0
10
Reverse Voltage , VR (V)
Page 2 of 2
20
0
100
200
Junction Temperature, Tj (°C)
Rev. 02 : March 25, 2005