BZT52C2V4 ~ BZT52C51 SURFACE MOUNT ZENER DIODE Features Planar Die Construction 500mW Power Dissipation on Ceramic PCB General Purpose, Medium Current Ideally Suited for Automated Assembly Processes A SOD-123 C D B Mechanical Data Case: SOD-123, Plastic UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020A Terminals: Solderable per MIL-STD-202, Method 208 Polarity: Cathode Band Marking: See Below Weight: 0.01 grams (approx.) E H G J Dim Min Max A 3.6 3.9 B 2.5 2.8 C 1.4 1.8 D 0.5 0.7 E — 0.2 G 0.4 — H 0.95 1.35 J — 0.12 All Dimensions in mm Cathode Anode ELECTRICAL SYMBOL Maximum Ratings @TA=25°C unless otherwise specified Type Number Forward Voltage @ IF = 10mA Power Dissipation (Note 1) Thermal Resistance Junction to Ambient Air (Note 1) Operating and Storage Temperature Range Symbol VF Pd R JA TJ, TSTG Value 0.9 500 305 -55 to + 150 Units V mW O C /W O C Notes: 1. Device Mounted on Ceramic PCB, 7.6mm x 9.4mm x 0.87mm with Pad Areas 25mm2. 2. Tested with Pulses. Period = 5ms, Pulse Width = 300us 3. When Provided, Otherwise, Parts are Provided with Date Code only, and Type Number Identifications Appears on reel only. 4. f = 1KHz. BZT52C2V4 ~ BZT52C51 SURFACE MOUNT ZENER DIODE Electrical Characteristics @TA=25°C unless otherwise specified Nominal Zener Voltage Part Number Z ZT @ I ZT V Z @ IZT No m. V M i n. V Max Reverse Leakage Current Max. Zener Impedance M a x. V Z ZK @ I ZK mA IR @ V R mA µA V Marking C ode 500 mWatts Zener Diodes BZT52-C2V4 2.4 2.28 2.52 85 5.0 600 1.00 100 1.0 WX BZT52-C2V7 2.7 2.57 2.84 83 5.0 600 1.00 75 1.0 W1 BZT52-C3V0 3.0 2.85 3.15 95 5.0 600 1.00 50 1.0 W2 BZT52-C3V3 3.3 3.14 3.47 95 5.0 600 1.00 25 1.0 W3 BZT52-C3V6 3.6 3.42 3.78 95 5.0 600 1.00 15 1.0 W4 BZT52-C3V9 3.9 3.71 4.10 95 5.0 600 1.00 10 1.0 W5 BZT52-C4V3 4.3 4.09 4.52 95 5.0 600 1.00 5.0 1.0 W6 BZT52-C4V7 4.7 4.47 4.94 78 5.0 500 1.00 5.0 1.0 W7 BZT52-C5V1 5.1 4.85 5.36 60 5.0 480 1.00 0.1 0.8 W8 BZT52-C5V6 5.6 5.32 5.88 40 5.0 400 1.00 0.1 1.0 W9 BZT52-C6V2 6.2 5.89 6.51 10 5.0 150 1.00 0.1 2.0 WA BZT52-C6V8 6.8 6.46 7.14 8 5.0 80 1.00 0.1 3.0 WB BZT52-C7V5 7.5 7.13 7.88 7 5.0 80 1.00 0.1 5.0 WC BZT52-C8V2 8.2 7.79 8.61 7 5.0 80 1.00 0.1 6.0 WD BZT52-C 9V1 9.1 8.65 9.56 10 5.0 100 1.00 0.1 7.0 WE BZT52-C 10 10 9.50 10.50 15 5.0 150 1.00 0.1 7.5 WF BZT52-C 11 11 10.45 11.55 20 5.0 150 1.00 0.1 8.5 WG BZT52-C 12 12 11.40 12.60 20 5.0 150 1.00 0.1 9.0 WH BZT52-C 13 13 12.35 13.65 25 5.0 170 1.00 0.1 10.0 WI BZT52-C 15 15 14.25 15.75 30 5.0 200 1.00 0.1 11.0 WJ BZT52-C 16 16 15.20 16.80 40 5.0 200 1.00 0.1 12.0 WK BZT52-C 18 18 17.10 18.90 50 5.0 225 1.00 0.1 14.0 WL BZT52-C 20 20 19.00 21.00 50 5.0 225 1.00 0.1 15.0 WM BZT52-C 22 22 20.90 23.10 55 5.0 250 1.00 0.1 17.0 WN BZT52-C 24 24 22.80 25.20 80 5.0 250 1.00 0.1 18.0 WO BZT52-C 27 27 25.65 28.35 80 5.0 300 1.00 0.1 20.0 WP BZT52-C 30 30 28.50 31.50 80 5.0 300 1.00 0.1 22.5 WQ BZT52-C 33 33 31.35 34.65 80 5.0 325 1.00 0.1 25.0 WR BZT52-C 36 36 34.20 37.80 90 5.0 350 1.00 0.1 27.0 WS BZT52-C 39 39 37.05 40.95 90 5.0 375 1.00 0.1 29.0 WT BZT52-C 43 43 40.85 45.15 100 5.0 375 1.00 0.1 32.0 WU BZT52-C 47 47 44.65 49.35 100 5.0 375 1.00 0.1 35.0 WV BZT52-C 51 51 48.45 53.55 100 5.0 400 1.00 0.1 38.0 WW BZT52C2V4 ~ BZT52C51 RATINGS AND CHARACTERISTIC CURVES 40 0.3 Mounted on FR-4 PCB with Minimum Recommended Pad Layout 0.2 0.1 0 25 50 75 100 125 TL, LEAD TEMPERATURE (°C) Fig. 1 Power Derating Curve 10 9V1 0 1 2 3 4 5 6 7 8 9 VZ, ZENER VOLTAGE (V) Fig. 2 Zener Breakdown Characteristics 10 39 15 18 15 22 33 0 5 10 36 Test Current IZ 27 10 15 20 25 30 35 40 45 VZ, ZENER VOLTAGE (V) Fig. 3 Zener Breakdown Characteristics 43 8 1000 TJ = 25°C 51 6 4 2 0 50 47 0 10 Test Current IZ 12 5 20 30 40 50 60 70 80 90 100 VZ, ZENER VOLTAGE (V) Fig. 4 Zener Breakdown Characteristics 1000 100 TJ = 100°C 10 TJ = 25°C 0 0.2 1.0 0.4 0.6 0.8 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 5 Typical Forward Characteristics CJ, JUNCTION CAPACITANCE (pF) IF, INSTANTANEOUS FORWARD CURRENT (mA) 7V5 10 TJ = 25°C IZ, ZENER CURRENT (mA) 20 1 20 6V2 8V2 10 Test Current IZ IZ, ZENER CURRENT (mA) 25 0 30 0 150 5V6 6V8 Test Current IZ 0 TJ = 25°C 2V4 2V7 3V0 3V3 3V6 3V9 4V3 4V7 5V1 Test Current IZ 0.4 IZ, ZENER CURRENT (mA) PD, POWER DISSIPATION (W) 0.5 TJ = 25°C f = 1MHz @ 0V Bias 100 10 @ 1V Bias 1 10 100 VZ, NOMINAL ZENER VOLTAGE (V) Fig. 6 Junction Capacitance vs. Nominal Zener Voltage