BZT52C2V4 ~ BZT52C51

BZT52C2V4 ~ BZT52C51
SURFACE MOUNT ZENER DIODE
Features
Planar Die Construction
500mW Power Dissipation on Ceramic PCB
General Purpose, Medium Current
Ideally Suited for Automated Assembly
Processes
A
SOD-123
C
D
B
Mechanical Data
Case: SOD-123, Plastic
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020A
Terminals: Solderable per MIL-STD-202,
Method 208
Polarity: Cathode Band
Marking: See Below
Weight: 0.01 grams (approx.)
E
H
G
J
Dim
Min
Max
A
3.6
3.9
B
2.5
2.8
C
1.4
1.8
D
0.5
0.7
E
—
0.2
G
0.4
—
H
0.95
1.35
J
—
0.12
All Dimensions in mm
Cathode
Anode
ELECTRICAL SYMBOL
Maximum Ratings
@TA=25°C unless otherwise specified
Type Number
Forward Voltage
@ IF = 10mA
Power Dissipation (Note 1)
Thermal Resistance Junction to Ambient Air
(Note 1)
Operating and Storage Temperature Range
Symbol
VF
Pd
R
JA
TJ, TSTG
Value
0.9
500
305
-55 to + 150
Units
V
mW
O
C /W
O
C
Notes: 1. Device Mounted on Ceramic PCB, 7.6mm x 9.4mm x 0.87mm with Pad Areas 25mm2.
2. Tested with Pulses. Period = 5ms, Pulse Width = 300us
3. When Provided, Otherwise, Parts are Provided with Date Code only, and Type Number
Identifications Appears on reel only.
4. f = 1KHz.
BZT52C2V4 ~ BZT52C51
SURFACE MOUNT ZENER DIODE
Electrical Characteristics
@TA=25°C unless otherwise specified
Nominal Zener Voltage
Part Number
Z ZT @ I ZT
V Z @ IZT
No m. V
M i n. V
Max Reverse
Leakage Current
Max. Zener Impedance
M a x. V
Z ZK @ I ZK
mA
IR @ V R
mA
µA
V
Marking
C ode
500 mWatts Zener Diodes
BZT52-C2V4
2.4
2.28
2.52
85
5.0
600
1.00
100
1.0
WX
BZT52-C2V7
2.7
2.57
2.84
83
5.0
600
1.00
75
1.0
W1
BZT52-C3V0
3.0
2.85
3.15
95
5.0
600
1.00
50
1.0
W2
BZT52-C3V3
3.3
3.14
3.47
95
5.0
600
1.00
25
1.0
W3
BZT52-C3V6
3.6
3.42
3.78
95
5.0
600
1.00
15
1.0
W4
BZT52-C3V9
3.9
3.71
4.10
95
5.0
600
1.00
10
1.0
W5
BZT52-C4V3
4.3
4.09
4.52
95
5.0
600
1.00
5.0
1.0
W6
BZT52-C4V7
4.7
4.47
4.94
78
5.0
500
1.00
5.0
1.0
W7
BZT52-C5V1
5.1
4.85
5.36
60
5.0
480
1.00
0.1
0.8
W8
BZT52-C5V6
5.6
5.32
5.88
40
5.0
400
1.00
0.1
1.0
W9
BZT52-C6V2
6.2
5.89
6.51
10
5.0
150
1.00
0.1
2.0
WA
BZT52-C6V8
6.8
6.46
7.14
8
5.0
80
1.00
0.1
3.0
WB
BZT52-C7V5
7.5
7.13
7.88
7
5.0
80
1.00
0.1
5.0
WC
BZT52-C8V2
8.2
7.79
8.61
7
5.0
80
1.00
0.1
6.0
WD
BZT52-C 9V1
9.1
8.65
9.56
10
5.0
100
1.00
0.1
7.0
WE
BZT52-C 10
10
9.50
10.50
15
5.0
150
1.00
0.1
7.5
WF
BZT52-C 11
11
10.45
11.55
20
5.0
150
1.00
0.1
8.5
WG
BZT52-C 12
12
11.40
12.60
20
5.0
150
1.00
0.1
9.0
WH
BZT52-C 13
13
12.35
13.65
25
5.0
170
1.00
0.1
10.0
WI
BZT52-C 15
15
14.25
15.75
30
5.0
200
1.00
0.1
11.0
WJ
BZT52-C 16
16
15.20
16.80
40
5.0
200
1.00
0.1
12.0
WK
BZT52-C 18
18
17.10
18.90
50
5.0
225
1.00
0.1
14.0
WL
BZT52-C 20
20
19.00
21.00
50
5.0
225
1.00
0.1
15.0
WM
BZT52-C 22
22
20.90
23.10
55
5.0
250
1.00
0.1
17.0
WN
BZT52-C 24
24
22.80
25.20
80
5.0
250
1.00
0.1
18.0
WO
BZT52-C 27
27
25.65
28.35
80
5.0
300
1.00
0.1
20.0
WP
BZT52-C 30
30
28.50
31.50
80
5.0
300
1.00
0.1
22.5
WQ
BZT52-C 33
33
31.35
34.65
80
5.0
325
1.00
0.1
25.0
WR
BZT52-C 36
36
34.20
37.80
90
5.0
350
1.00
0.1
27.0
WS
BZT52-C 39
39
37.05
40.95
90
5.0
375
1.00
0.1
29.0
WT
BZT52-C 43
43
40.85
45.15
100
5.0
375
1.00
0.1
32.0
WU
BZT52-C 47
47
44.65
49.35
100
5.0
375
1.00
0.1
35.0
WV
BZT52-C 51
51
48.45
53.55
100
5.0
400
1.00
0.1
38.0
WW
BZT52C2V4 ~ BZT52C51
RATINGS AND CHARACTERISTIC CURVES
40
0.3
Mounted on FR-4 PCB with
Minimum Recommended
Pad Layout
0.2
0.1
0
25
50
75
100
125
TL, LEAD TEMPERATURE (°C)
Fig. 1 Power Derating Curve
10
9V1
0
1
2
3
4
5
6
7
8
9
VZ, ZENER VOLTAGE (V)
Fig. 2 Zener Breakdown Characteristics
10
39
15
18
15
22
33
0
5
10
36
Test Current IZ
27
10
15 20 25 30 35 40 45
VZ, ZENER VOLTAGE (V)
Fig. 3 Zener Breakdown Characteristics
43
8
1000
TJ = 25°C
51
6
4
2
0
50
47
0
10
Test Current IZ
12
5
20
30 40 50 60 70 80 90 100
VZ, ZENER VOLTAGE (V)
Fig. 4 Zener Breakdown Characteristics
1000
100
TJ = 100°C
10
TJ = 25°C
0
0.2
1.0
0.4
0.6
0.8
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 5 Typical Forward Characteristics
CJ, JUNCTION CAPACITANCE (pF)
IF, INSTANTANEOUS FORWARD CURRENT (mA)
7V5
10
TJ = 25°C
IZ, ZENER CURRENT (mA)
20
1
20
6V2
8V2
10
Test Current IZ
IZ, ZENER CURRENT (mA)
25
0
30
0
150
5V6 6V8
Test Current IZ
0
TJ = 25°C
2V4
2V7
3V0
3V3
3V6
3V9
4V3
4V7
5V1
Test Current IZ
0.4
IZ, ZENER CURRENT (mA)
PD, POWER DISSIPATION (W)
0.5
TJ = 25°C
f = 1MHz
@ 0V Bias
100
10
@ 1V Bias
1
10
100
VZ, NOMINAL ZENER VOLTAGE (V)
Fig. 6 Junction Capacitance vs. Nominal Zener Voltage