TSC BZT52C39S

BZT52C2V4S - BZT52C39S
0.2W Plastic-Encapsulate Zener Diode
Pb
RoHS
SOD-323
COMPLIANCE
Features
—
—
—
Planar die construction
Ultra-small surface mount package
Ideally suited for automated assembly
processes
Mechanical Data
—
—
—
—
—
—
—
—
Case: SOD-323, Plastic
Case material: molded plastic. UL Flammability
classification rating 94V-0
Moisture sensitivity: level 1 per J-STD-020C
Terminals: Solderable per MIIL-STD-202,
Method 208
Lead free plating
Polarity: Cathode band
Marking: See sheet 2
Weight: 0.004 grams (approx.)
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25 OC ambient temperature unless otherwise specified.
Type Number
Forward Voltage
@ IF = 10mA
Power Dissipation (Note 1)
Thermal Resistance Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Symbol
VF
Pd
RθJA
TJ, TSTG
Value
0.9
200
625
-65 to + 150
Notes: 1. Valid provided the device terminals are kept at ambient temperature.
2. Short duration test pulse used in minimize self-heating effect.
3. f = 1KHz.
:
Version: A07
Units
V
mW
O
C/W
O
C
ELECTRICAL CHARACTERISTICS (TA=25OC
Type
Number
(Note 1)
Marking
Code
Zener Voltage Range (Note 2)
Vz @ Izt
IZT
Nom (V) Min (V) Max (V)
mA
unless otherwise noted)
Maximum Zener
Impedance (Note 3)
ZZK @ IZK
ZZT @ IZT
Ohms
Ohms
mA
Maximum Reverse
Current
IR
VR
uA
V
Typical Temerature
Coefficient
@ IZT
mV / oC
Min
Max
BZT52C2V4S
WX
2.4
2.2
2.6
5
100
600
1.0
50
1.0
-3.5
0
BZT52C2V7S
W1
2.7
2.5
2.9
5
100
600
1.0
20
1.0
-3.5
0
BZT52C3V0S
W2
3.0
2.8
3.2
5
95
600
1.0
10
1.0
-3.5
0
BZT52C3V3S
W3
3.3
3.1
3.5
5
95
600
1.0
5.0
1.0
-3.5
0
BZT52C3V6S
W4
3.6
3.4
3.8
5
90
600
1.0
5.0
1.0
-3.5
0
BZT52C3V9S
W5
3.9
3.7
4.1
5
90
600
1.0
3.0
1.0
-3.5
0
BZT52C4V3S
W6
4.3
4.0
4.6
5
90
600
1.0
3.0
1.0
-3.5
0
BZT52C4V7S
W7
4.7
4.4
5.0
5
80
500
1.0
3.0
2.0
-3.5
0.2
BZT52C5V1S
W8
5.1
4.8
5.4
5
60
480
1.0
2.0
2.0
-2.7
1.2
BZT52C5V6S
W9
5.6
5.2
6.0
5
40
400
1.0
1.0
2.0
-2.0
2.5
BZT52C6V2S
WA
6.4
5.8
6.6
5
10
150
1.0
3.0
4.0
0.4
3.7
BZT52C6V8S
WB
6.8
6.4
7.2
5
15
80
1.0
2.0
4.0
1.2
4.5
BZT52C7V5S
WC
7.5
7.0
7.9
5
15
80
1.0
1.0
5.0
2.5
5.3
BZT52C8V2S
WD
8.2
7.7
8.7
5
15
80
1.0
0.7
5.0
3.2
6.2
BZT52C9V1S
WE
9.1
8.5
9.6
5
15
100
1.0
0.5
6.0
3.8
7.0
BZT52C10S
WF
10
9.4
10.6
5
20
150
1.0
0.2
7.0
4.5
8.0
BZT52C11S
WG
11
10.4
11.6
5
20
150
1.0
0.1
8.0
5.4
9.0
BZT52C12S
WH
12
11.4
12.7
5
25
150
1.0
0.1
8.0
6.0
10.0
BZT52C13S
WI
13
12.4
14.1
5
30
170
1.0
0.1
8.0
7.0
11.0
BZT52C15S
WJ
15
13.8
15.6
5
30
200
1.0
0.1
10.5
9.2
13.0
BZT52C16S
WK
16
15.3
17.1
5
40
200
1.0
0.1
11.2
10.4
14.0
BZT52C18S
WL
18
16.8
19.1
5
45
225
1.0
0.1
12.6
12.4
16.0
BZT52C20S
WM
20
18.8
21.2
5
55
225
1.0
0.1
14.0
14.4
18.0
BZT52C22S
WN
22
20.8
23.3
5
55
250
1.0
0.1
15.4
16.4
20.0
BZT52C24S
WO
24
22.8
25.6
5
70
250
1.0
0.1
16.8
18.4
22.0
BZT52C27S
WP
27
25.1
28.9
2
80
300
0.5
0.1
18.9
21.4
25.3
BZT52C30S
WQ
30
28
32
2
80
300
0.5
0.1
21.0
24.4
29.4
BZT52C33S
WR
33
31
35
2
80
325
0.5
0.1
23.1
27.4
33.4
BZT52C36S
WS
36
34
38
2
90
350
0.5
0.1
25.2
30.4
37.4
BZT52C39S
WT
39
37
41
2
130
350
0.5
0.1
27.3
33.4
41.2
Notes: 1. Valid provided that device terminals are kept at ambient temperature.
2. Tested with pulses, 300us pulse width, period = 5ms.
3. f = 1KHz.
Version: A07
RATINGS AND CHARACTERISTIC CURVES (BZT52C2V4S THRU BZT52C39S)
FIG.1- POWER DERATING CURVE
FIG.2- ZENER BREAKDOWN CHARACTERISTICS
50
O
Tj = 25 C
200
150
100
50
100
0
30
20
Test Current IZ
5.0mA
10
0
1
2
C15
C18
Test Current IZ
2mA
C22
10
0
C27
Test Current IZ
5mA
0
10
5
1000
C12
20
4
C33
20
30
VZ, ZENER VOLTAGE (V)
C36
6
7
8
9 10
FIG.4- JUNCTION CAPACITANCE VS NOMINAL
ZENER VOLTAGE
C10
C39
40
Cj, JUNCTION CAPACITANCE (pF)
O
3
VZ, ZENER VOLTAGE (V)
FIG.3- ZENER BREAKDOWN CHARACTERISTICS
Tj = 25 C
C6V8
C8V2
0
200
C5V6
C4V7
40
TA, AMBIENT TEMPERATURE, (OC)
30
C3V9
C3V3
0
IZ, ZENER CURRENT (mA)
C2V7
See Note 1
IZ, ZENER CURRENT (mA)
Pd, POWER DISSIPATION (mW)
250
O
Tj = 25 C
VR = 1V
VR = 2V
100
VR = 1V
VR = 2V
10
1
10
100
VZ, NOMINAL ZENER VOLTAGE (V)
Version: A07