CDBQR54 - Comchip Technology

SMD Schottky Barrier Diode
CDBQR54
I o = 200 mA
V R = 30 Volts
RoHS Device
0402/SOD-923F
Features
0.041(1.05)
0.037(0.95)
-Low forward voltage.
-Designed for mounting on small surface.
0.026(0.65)
0.022(0.55)
-Extremely thin / leadless package.
-Majority carrier conduction.
Mechanical data
0.022(0.55)
-Case: 0402/SOD-923F standard package,
molded plastic.
0.018(0.45)
0.012(0.30) Typ.
-Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
-Marking Code: Cathode band & BF
-Mounting position: Any.
0.020(0.50) Typ.
-Weight: 0.001 gram(approx.).
Dimensions in inches and (millimeter)
Maximum Rating (at T A =25 C unless otherwise noted)
O
Parameter
Conditions
Symbol Min Typ Max Unit
Peak reverse voltage
Reverse voltage
RMS reverse voltage
Average forward rectified current
Repetitive peak forward current
Forward current,surge peak
8.3 ms single half sine-wave superimposed
on rate load(JEDEC method)
Power dissipation
V RM
30
V
VR
30
V
V R(RMS)
21
V
IO
200
mA
I FRM
0.3
A
I FSM
0.6
A
PD
125
mW
Storage temperature
T STG
Junction temperature
Tj
-65
+125
O
+125
O
C
C
Electrical Characteristics (at T A =25 C unless otherwise noted)
O
Parameter
Conditions
Forward voltage
I F = 0.1mA
I F = 1mA
I F = 10mA
I F = 30mA
I F = 100mA
Reverse current
Symbol Min Typ Max Unit
VF
0.24
0.32
0.4
0.5
1
V
V R = 25V
IR
2
uA
Capacitance between terminals
f = 1 MHz, and 1 VDC reverse voltage
CT
10
pF
Reverse recovery time
I F =I R =10mA,Irr=0.1xIR,RL=100 Ohm
T rr
5
nS
REV:B
Page 1
QW-A1122
Comchip Technology CO., LTD.
SMD Schottky Barrier Diode
RATING AND CHARACTERISTIC CURVES (CDBQR54)
Fig. 1 - Forward characteristics
Fig. 2 - Reverse characteristics
1m
1000
Reverse current ( A )
100
10
O
75 C
1u
O
25 C
C
100n
O
C
10u
-25
O
25
C
O
125
75 C
1
O
Forward current (mA )
O
125 C
100u
O
-25 C
0.1
10n
0
0.2
0.4
0.6
0.8
0
5
15
20
30
25
Reverse voltage (V)
Forward voltage (V)
Fig.3 - Capacitance between
terminals characteristics
Fig.4 - Current derating curve
120
14
Mounting on glass epoxy PCBs
f=1MHz
O
T A =25 C
12
Average forward current(%)
Capacitance between terminals ( P F)
10
10
8
6
4
2
100
80
60
40
20
0
0
0
5
10
15
20
25
30
0
25
50
75
100
125
150
O
Reverse voltage (V)
Ambient temperature ( C)
REV:B
Page 2
QW-A1122
Comchip Technology CO., LTD.
SMD Schottky Barrier Diode
Reel Taping Specification
d
P0
P1
T
E
Index hole
F
W
B
Polarity
P
C
A
12
o
0
D2
D1 D
W1
Trailer
Device
.......
.......
End
.......
.......
Leader
.......
.......
10 pitches (min)
.......
.......
Start
10 pitches (min)
Direction of Feed
0402
(SOD-923F)
0402
(SOD-923F)
SYMBOL
A
B
C
d
D
D1
D2
(mm)
0.75 ± 0.10
1.15 ± 0.10
0.60 ± 0.10
1.55 + 0.10
178 ± 1
60.0 MIN.
13.0 ± 0.20
(inch)
0.026 ± 0.004
0.045 ± 0.004
0.024 ± 0.004
0.061 + 0.004
7.008 ± 0.04
2.362 MIN.
0.512 ± 0.008
SYMBOL
E
F
P
P0
P1
T
W
W1
(mm)
1.75 ± 0.10
3.50 ± 0.05
4.00 ± 0.10
4.00 ± 0.10
2.00 ± 0.10
0.22 ± 0.05
8.00 ± 0.20
13.5 MAX.
(inch)
0.069 ± 0.004
0.138 ± 0.002
0.157 ± 0.004
0.157 ± 0.004
0.079 ± 0.004
0.009 ± 0.002
0.315 ± 0.008
0.531 MAX.
REV:B
Page 3
QW-A1122
Comchip Technology CO., LTD.
SMD Schottky Barrier Diode
Marking Code
Part Number
Marking Code
CDBQR54
BF
BF
Suggested PAD Layout
0402/SOD-923F
SIZE
(mm)
(inch)
A
0.750
0.030
B
0.500
0.020
C
0.700
0.028
D
1.250
0.049
E
0.250
0.010
D
A
E
C
B
Standard Package
Qty per Reel
Reel Size
(Pcs)
(inch)
5000
7
Case Type
0402/SOD-923F
REV:B
Page 4
QW-A1122
Comchip Technology CO., LTD.