COMCHIP CDBU70-HF

SMD Schottky Barrier Diode
SMD Diodes Specialist
CDBU70-HF (RoHS Device)
Io = 70 mA
V R = 70 Volts
Features
0603(1608)
Halogen free.
0.071(1.80)
0.063(1.60)
Low forward voltage.
Designed for mounting on small surface.
0.039(1.00)
0.031(0.80)
Extremely thin / leadless package.
Majority carrier conduction.
Mechanical data
0.033(0.85)
Case: 0603(1608) standard package,
molded plastic.
0.027(0.70)
0.014(0.35) Typ.
Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
Marking code: cathode band & BG
0.012 (0.30) Typ.
Mounting position: Any
0.028(0.70) Typ.
Weight: 0.003 gram(approx.).
Dimensions in inches and (millimeter)
Maximum Rating (at T A =25 C unless otherwise noted)
O
Parameter
Conditions
Peak reverse voltage
Reverse voltage
RMS reverse voltage
Average forward rectified current
Forward current,surge peak
8.3 ms single half sine-wave superimposed
on rate load(JEDEC method)
Power dissipation
Symbol Min Typ Max Unit
V RM
70
V
VR
70
V
V R(RMS)
49
V
IO
70
mA
I FSM
0.1
A
PD
150
mW
Storage temperature
T STG
Junction temperature
Tj
-65
+125
O
+125
O
C
C
Electrical Characteristics (at T A =25 C unless otherwise noted)
O
Parameter
Conditions
Symbol Min Typ Max Unit
Forward voltage
I F = 1mA
I F = 15mA
VF
0.41
1
V
Reverse current
V R = 50V
IR
0.1
uA
Capacitance between terminals
f = 1 MHz, and 0 VDC reverse voltage
CT
2
pF
Reverse recovery time
I F =I R =10mA,Irr=0.1xIR,RL=100 Ohm
T rr
5
nS
REV:A
Page 1
QW-G1007
Comchip Technology CO., LTD.
SMD Schottky Barrier Diode
SMD Diodes Specialist
RATING AND CHARACTERISTIC CURVES (CDBU70-HF)
Fig. 1 - Forward characteristics
100
C
O
100u
C
O
25 C
12
5
O
75
Fig. 2 - Reverse characteristics
O
125 C
Reverse current ( A )
Forward current (mA )
O
0 C
O
-40 C
10
1
10u
O
75 C
1u
100n
O
25 C
10n
O
0 C
1n
O
-40 C
0.1
0.1n
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
10
30
40
60
50
70
Reverse voltage (V)
Forward voltage (V)
Fig.3 - Capacitance between
terminals characteristics
Fig.4 - Current derating curve
120
2.0
f=1MHz
O
T A =25 C
1.8
Mounting on glass epoxy PCBs
Average forward current(%)
Capacitance between terminals ( P F)
20
1.6
1.4
1.2
1.0
0.8
0.6
0.4
100
80
60
40
20
0.2
0
0
0
5
10
15
20
25
30
35
40
0
25
50
75
100
125
150
O
Reverse voltage (V)
Ambient temperature ( C)
REV:A
Page 2
QW-G1007
Comchip Technology CO., LTD.
SMD Schottky Barrier Diode
SMD Diodes Specialist
Reel Taping Specification
d
P0
P1
T
E
Index hole
F
W
B
Polarity
P
C
A
12
o
0
D2
D1 D
W1
Trailer
.......
.......
End
Device
.......
.......
Leader
.......
.......
.......
.......
10 pitches (min)
Start
10 pitches (min)
Direction of Feed
U/0603
U/0603
SYMBOL
A
B
C
d
D
D1
D2
(mm)
1.00 ± 0.10
1.85 ± 0.10
1.00 ± 0.10
1.55 ± 0.05
178 ± 1
60.0 MIN.
13.0 ± 0.20
(inch)
0.039 ± 0.004
0.073 ± 0.004
0.039 ± 0.004
0.061 ± 0.002
7.008 ± 0.04
2.362 MIN.
0.512 ± 0.008
SYMBOL
E
F
P
P0
P1
T
W
W1
(mm)
1.75 ± 0.10
3.50 ± 0.05
4.00 ± 0.10
4.00 ± 0.10
2.00 ± 0.05
0.23 ± 0.05
8.00 ± 0.20
13.5 MAX.
(inch)
0.069 ± 0.004
0.138 ± 0.002
0.157 ± 0.004
0.157 ± 0.004
0.079 ± 0.004
0.009 ± 0.002
0.315 ± 0.008
0.531 MAX.
REV:A
Page 3
QW-G1007
Comchip Technology CO., LTD.
SMD Schottky Barrier Diode
SMD Diodes Specialist
Marking Code
Park Number
Marking Code
CDBU70-HF
BG
BG
Suggested PAD Layout
U/0603
SIZE
A
(mm)
(inch)
1.70
0.067
D
A
B
0.60
0.024
C
0.80
0.031
E
C
D
2.30
0.091
E
1.10
0.043
B
Standard Package
Qty per Reel
Reel Size
(Pcs)
(inch)
4000
7
Case Type
U/0603
REV:A
Page 4
QW-G1007
Comchip Technology CO., LTD.