SMD Schottky Barrier Diode CDBQR0230L I o = 200 mA V R = 30 Volts RoHS Device Features 0402/SOD-923F -Low forward voltage. 0.041(1.05) 0.037(0.95) -Designed for mounting on small surface. -Extremely thin / leadless package. 0.026(0.65) 0.022(0.55) -Majority carrier conduction. Mechanical data 0.022(0.55) 0.018(0.45) -Case: 0402/SOD-923F standard package, molded plastic. 0.012(0.30) Typ. -Terminals: Gold plated, solderable per MIL-STD-750,method 2026. -Marking Code: Cathode band & BA -Mounting position: Any. 0.020(0.50) Typ. -Weight: 0.001 gram(approx.). Dimensions in inches and (millimeter) Maximum Rating (at T A =25 C unless otherwise noted) O Parameter Conditions Symbol Min Typ Max Unit Repetitive peak reverse voltage Reverse voltage Average forward current Forward current,surge peak 8.3ms single half sine-wave superimposed on rate load(JEDEC method) Power Dissipation V RRM 35 V VR 30 V IO 200 mA I FSM 1 A PD 125 mW Storage temperature T STG Junction temperature Tj -40 +125 O +125 O C C Electrical Characteristics (at T A =25 C unless otherwise noted) O Parameter Conditions Symbol Min Typ Max Unit Forward voltage I F = 200 mA VF 0.5 V Reverse current V R = 10 V IR 30 uA REV:C Page 1 QW-A1118 Comchip Technology CO., LTD. SMD Schottky Barrier Diode RATING AND CHARACTERISTIC CURVES (CDBQR0230L) Fig. 1 - Forward characteristics Fig. 2 - Reverse characteristics 1m 1000 Reverse current ( A ) C C O -25 O C 25 1 O 12 5 O C 10 75 Forward current (mA ) O 100 75 C 100u 10u O 25 C 1u 100n O -25 C 0 10n 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 5 0 10 15 20 25 Forward voltage (V) Reverse voltage (V) Fig.3 - Capacitance between terminals characteristics Fig.4 - Current derating curve f = 1 MHz Ta = 25 C 10 100 80 60 40 20 0 1 0 5 10 15 20 25 0 30 25 50 75 100 125 Fig. 5 - VF Dispersion map Fig. 6 - IR Dispersion map 450 Fig. 7 - CT Dispersion map 50 30 O O 420 410 400 AVG:421.28mV Reverse current (uA) 430 O 45 Ta=25 C VR=10V n=30pcs 40 35 30 25 20 15 10 AVG:4.1816uA Ta=25 C F=1MHz VR=0V n=10pcs 29 Capacitance between terminals(pF) Ta=25 C IF=200mA n=30pcs 440 150 O Ambient temperature ( C) Reverse voltage (V) Forward voltage (mV) 30 100 Average forward current(%) Capacitance between terminals ( P F) 0 28 27 26 25 24 23 22 5 21 0 20 AVG:22.8pF REV:C Page 2 QW-A1118 Comchip Technology CO., LTD. SMD Schottky Barrier Diode Reel Taping Specification d P0 P1 T E Index hole F W B Polarity P C A 12 o 0 D2 D1 D W1 Trailer Device ....... ....... End ....... ....... Leader ....... ....... 10 pitches (min) ....... ....... Start 10 pitches (min) Direction of Feed 0402 (SOD-923F) 0402 (SOD-923F) SYMBOL A B C d D D1 D2 (mm) 0.75 ± 0.10 1.15 ± 0.10 0.60 ± 0.10 1.55 + 0.10 178 ± 1 60.0 MIN. 13.0 ± 0.20 (inch) 0.026 ± 0.004 0.045 ± 0.004 0.024 ± 0.004 0.061 + 0.004 7.008 ± 0.04 2.362 MIN. 0.512 ± 0.008 SYMBOL E F P P0 P1 T W W1 (mm) 1.75 ± 0.10 3.50 ± 0.05 4.00 ± 0.10 4.00 ± 0.10 2.00 ± 0.10 0.22 ± 0.05 8.00 ± 0.20 13.5 MAX. (inch) 0.069 ± 0.004 0.138 ± 0.002 0.157 ± 0.004 0.157 ± 0.004 0.079 ± 0.004 0.009 ± 0.002 0.315 ± 0.008 0.531 MAX. REV:C Page 3 QW-A1118 Comchip Technology CO., LTD. SMD Schottky Barrier Diode Marking Code Part Number Marking Code CDBQR0230L BA BA Suggested PAD Layout 0402/SOD-923F SIZE (mm) (inch) A 0.750 0.030 B 0.500 0.020 C 0.700 0.028 D 1.250 0.049 E 0.250 0.010 D A E C B Standard Package Qty per Reel Reel Size (Pcs) (inch) 5000 7 Case Type 0402/SOD-923F REV:C Page 4 QW-A1118 Comchip Technology CO., LTD.