COMCHIP CDBQR0130R

SMD Schottky Barrier Diode
SMD Diodes Specialist
CDBQR0130R (RoHS Device)
Io = 100 mA
V R = 30 Volts
0402(1005)
Features
0.041(1.05)
0.037(0.95)
Low reverse current .
Designed for mounting on small surface.
0.026(0.65)
0.022(0.55)
Extremely thin / leadless package.
Majority carrier conduction.
Mechanical data
0.022(0.55)
Case: 0402(1005) standard package,
molded plastic.
0.018(0.45)
0.012(0.30) Typ.
Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
Marking code: cathode band & BQ
Mounting position: Any
0.020(0.50) Typ.
Weight: 0.001 gram(approx.).
Dimensions in inches and (millimeter)
Maximum Rating (at T A =25 C unless otherwise noted)
O
Parameter
Conditions
Symbol Min Typ Max Unit
Repetitive peak reverse voltage
V RRM
35
V
Reverse voltage
VR
30
V
Average forward current
IO
100
mA
I FSM
1
A
Forward current,surge peak
8.3ms single half sine-wave superimposed
on rate load(JEDEC method)
Storage temperature
T STG
Junction temperature
Tj
-40
+125
O
+125
O
C
C
Electrical Characteristics (at T A =25 C unless otherwise noted)
O
Parameter
Conditions
Symbol Min Typ Max Unit
Forward voltage
I F = 10 mA
VF
0.45
V
Reverse current
V R = 10 V
IR
0.5
uA
REV:B
Page 1
QW-A1127
Comchip Technology CO., LTD.
SMD Schottky Barrier Diode
SMD Diodes Specialist
RATING AND CHARACTERISTIC CURVES (CDBQR0130R)
Fig. 1 - Forward characteristics
Fig. 2 - Reverse characteristics
1m
1000
O
Reverse current ( A )
100
C
5
O
C
10
1u
O
25 C
100n
C
O
C
75 C
O
25
O
10u
O
-25 C
10n
-25
75
1
O
12
Forward current (mA )
125 C
100u
0.1
1n
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
5
0
10
Fig. 3 - Capacitance between
terminals characteristics
25
30
Fig.4 - Current derating curve
100
f = 1 MHz
Ta = 25 C
Average forward current(%)
10
100
80
60
40
20
0
1
0
5
10
15
20
25
30
0
Fig. 6 - IR Dispersion map
330
AVG:335mV
320
310
100
125
O
800
700
600
500
400
300
Fig. 7 - CT Dispersion map
O
Ta=25 C
VR=10V
n=30pcs
900
Reverse current (nA)
340
75
50
1000
O
Ta=25 C
IF=10mA
n=30pcs
350
50
Ambient temperature ( C)
Fig. 5 - VF Dispersion map
360
25
O
Reverse voltage (V)
AVG:111nA
200
Ta=25 C
F=1MHz
VR=0V
n=10pcs
45
Capacitance between
terminals(pF)
Capacitance between terminals ( P F)
20
Reverse voltage (V)
Forward voltage (V)
Forward voltage (mV)
15
40
35
30
25
20
15
AVG:18.8pF
10
100
5
0
0
REV:B
Page 2
QW-A1127
Comchip Technology CO., LTD.
SMD Schottky Barrier Diode
SMD Diodes Specialist
Reel Taping Specification
d
P0
P1
T
E
Index hole
F
W
B
Polarity
P
C
A
12
o
0
D2
D1 D
W1
Trailer
.......
.......
End
Device
.......
.......
Leader
.......
.......
.......
.......
10 pitches (min)
Start
10 pitches (min)
Direction of Feed
QR/0402
QR/0402
SYMBOL
A
B
C
d
D
D1
D2
(mm)
0.75 ± 0.10
1.15 ± 0.10
0.60 ± 0.10
1.55 ± 0.10
178 ± 1
60.0 MIN.
13.0 ± 0.20
(inch)
0.026 ± 0.004
0.045 ± 0.004
0.024 ± 0.004
0.061 ± 0.004
7.008 ± 0.04
2.362 MIN.
0.512 ± 0.008
SYMBOL
E
F
P
P0
P1
T
W
W1
(mm)
1.75 ± 0.10
3.50 ± 0.05
4.00 ± 0.10
4.00 ± 0.10
2.00 ± 0.10
0.22 ± 0.05
8.00 ± 0.20
13.5 MAX.
(inch)
0.069 ± 0.004
0.138 ± 0.002
0.157 ± 0.004
0.157 ± 0.004
0.079 ± 0.004
0.009 ± 0.002
0.315 ± 0.008
0.531 MAX.
REV:B
Page 3
QW-A1127
Comchip Technology CO., LTD.
SMD Schottky Barrier Diode
SMD Diodes Specialist
Marking Code
Part Number
Marking Code
CDBQR0130R
BQ
BQ
Suggested PAD Layout
QR/0402
SIZE
(mm)
(inch)
A
0.750
0.030
B
0.500
0.020
C
0.700
0.028
D
1.250
0.049
E
0.250
0.010
D
A
E
C
B
Standard Package
Qty per Reel
Reel Size
(Pcs)
(inch)
5000
7
Case Type
QR/0402
REV:B
Page 4
QW-A1127
Comchip Technology CO., LTD.