Small Signal Schottky Diodes CDBV3-40/S/C/A-G Reverse Voltage: 40 Volts Forward Current: 200 mA RoHS Device SOT-323 Features -Design for mounting on small surface. 0.087(2.20) 0.070(1.80) -High speed switching application, circuit protection. 3 0.054(1.35) 0.045(1.15) -Low turn-on voltage. 1 Mechanical data 2 0.056(1.40) 0.047(1.20) 0.006(0.15) 0.002(0.05) -Case: SOT-323, molded plastic. -Terminals: solderable per MIL-STD-750, method 2026. 0.087(2.20) 0.078(2.00) 0.044(1.10) 0.035(0.90) -Approx. weight: 0.006 grams Circuit diagram 3 1 0.004(0.10)max. 3 2 CDBV3-40-G Marking Code:43 1 3 2 CDBV3-40S-G Mark Code:44 1 0.016(0.40) 0.008(0.20) 3 2 1 CDBV3-40C-G Marking Code: 45 2 0.004(0.10)min. Dimensions in inches and (millimeter) CDBV3-40A-G Marking Code: 46 Maximum Ratings (at Ta=25°C unless otherwise noted) Parameter Symbol Value Units VRRM VRWM VR 40 V Forward continuous current IFM 200 mA Peak surge forward current (T=1.0sec) IFSM 0.6 A Power dissipation PD 150 mW RθJA 833 Junction temperature TJ 125 O C Storage temperature TSTG -65 to +125 O C Peak repetitive peak reverse voltage Working peak reverse voltage DC blocking voltage Thermal resistance, junction to ambient O C/W Electrical Characteristics (at Ta=25°C unless otherwise noted) Parameter Reverse breakdown voltage Symbol Conditions Min. Max. 40 Units VBR IR=10μA Reverse voltage leakage current IR VR=30V 200 nA Forward voltage VF IF=1mA IF=40mA 380 1000 mV Diode capacitance CD VR=0V, f=1.0MHz 5 pF Reverse recovery time Trr Irr=1mA, IF=IR=10mA, RL=100Ω 5 nS V REV:B Page 1 QW-BA005 Comchip Technology CO., LTD. Small Signal Schottky Diodes RATING AND CHARACTERISTIC CURVES (CDBV3-40/S/C/A-G) Fig.1 Forward Characteristics Fig.2 Reverse Characteristics 1000 10000 TA=125 OC Rev er s e Curr e nt (n A) F o r w a r d C u r rent ( mA) 1000 100 TA=125 OC 10 O TA=-40 C TA=0 OC TA=25 OC 1 TA=75 OC 0.1 O TA=75 C 100 10 TA=25 OC 1 TA=-40 C TA=0 OC O 0.1 0 0.2 0.4 0.6 0.8 10 0 1.0 Forward Voltage (V) Fig.3 Capacitance Between Terminals Characteristics 40 30 50 Fig.4 Power Derating Curve 5 400 O TJ=25 C f=1MHz Mounted on glass epoxy PCBs 4 Pow er Dis sipation (mW) Capac i ta n c e Bet w een Te rmin a ls (p F ) 20 Reverse Voltage (V) 3 2 1 300 200 100 0 0 0 10 20 30 40 50 60 70 0 25 50 75 100 125 Ambient Temperature ( Reverse Voltage (V) O 150 175 C) REV:B Page 2 QW-BA005 Comchip Technology CO., LTD.