COMCHIP CDSH3-4448-G

SMD Switching Diodes
CDSH3-4448/A/C/S-G
Voltage: 80 Volts
Current: 250 mA
RoHS Device
Features
SOT-523
-Fast switching speed.
0.067(1.70)
0.059(1.50)
-For general purpose switching applications.
3
-High conductance.
0.033(0.85)
0.030(0.75)
Mechanical data
1
-Case: SOT-523, molded plastic.
-Terminals: Solder plated, solderable per MIL-STD202E, method 208C.
-Weight: 0.002 grams approx.
2
0.008(0.20)
0.004(0.10)
0.043(1.10)
0.035(0.90)
0.069(1.75)
0.057(1.45)
0.031(0.80)
0.024(0.60)
Circuit Diagram
3
3
3
0.004(0.10)max.
3
0.012(0.30)
0.006(0.15)
1
2
1
CDSH3-4448-G
Marking: A3
2
1
CDSH3-4448A-G
Marking: A6
2
1
CDSH3-4448C-G
Marking: A7
0.004(0.10)min.
2
CDSH3-4448S-G
Marking: AB
Dimensions in inches and (millimeter)
Maximum Ratings (Single diode, at TA=25°C unless otherwise noted)
Symbol
Value
Unit
Non-repetitive peak reverse voltage
VRM
100
V
Peak repetitive peak reverse voltage
VRRM
Working peak reverse voltage
VRWM
80
V
Parameter
DC blocking voltage
VR
RMS reverse voltage
VR(RMS)
57
V
Forward continuous current
IFM
500
mA
Averaged rectified output current
IO
250
mA
IFSM
4.0
2.0
A
PD
150
Peak forward surge current
@TP=1.0μS
@TP=1.0S
Power dissipation
Thermal resistance, junction to ambient
RθJA
833
Storage temperature
TSTG
-65 to +150
mW
O
C/W
O
C
Electrical Characteristics (Single diode, at TA=25°C unless otherwise noted)
Parameter
Reverse breakdown voltage
Forward voltage
Symbol
Conditions
Min.
VBR
IR=2.5μA
80
VF1
IF=5mA
0.62
Typ.
Max.
Unit
V
0.72
V
VF2
IF=10mA
0.855
V
VF3
IF=100mA
1.0
V
VF4
IF=150mA
1.25
V
IR1
VR=70V
0.1
μA
IR2
VR=20V
25
nA
Reverse current
Capacitance between terminals
CT
VR=6V, f=1MHz
3.5
pF
Reverse recovery time
Trr
VR=6V, IF=5mA
4
nS
REV:A
Page 1
QW-B0038
Comchip Technology CO., LTD.
SMD Switching Diodes
Rating and Characteristic Curves (CDSH3-4448/A/C/S-G)
Fig.1 - Forward Characteristics
Fig.2 - Reverse Characteristics
10000
ΙR, Instantaneous Reverse Current (nA)
IF, Instantaneous Forward Current (mA)
1000
100
O
TA=125 C
O
TA=75 C
10
O
TA=25 C
TA=0 OC
O
TA=-40 C
1
0.1
0
0.4
0.8
O
TA=125 C
1000
O
TA=75 C
100
O
TA=0 OC
1
O
TA=-40 C
0.1
0
1.6
1.2
TA=25 C
10
Fig.3 - Capacitance Between
Terminals Characteristics
40
60
80
100
Fig.4 - Power Derating Curve
3
250
f=1MHz
2.5
PD, Power Dissipation (mW)
CT, Capacitance Between Terminals (pF)
20
VR, Instantaneous Reverse Voltage (V)
VF, Instantaneous Forward Voltage (V)
2
1.5
1
0.5
0
200
150
100
50
0
0
10
20
30
40
50
0
VR, Reverse Voltage (V)
100
200
TA, Ambient Temperature (°C)
REV:A
Page 2
QW-B0038
Comchip Technology CO., LTD.