cdbfn140-hf - Comchip Technology

SMD Schottky Barrier Rectifiers
CDBFN140-HF Thru CDBFN160-HF
Voltage: 40 to 60 Volts
Current: 1.0 Amp
RoHS Device
Halogen free
SOD-323
Features
-Batch process design, excellent power
dissipation offers better reverse leakage current.
-Low profile surface mounted application
in order to optimize board space.
-Low power loss, high efficiency.
-High current capability, low forward voltage dorp.
-High surge capability.
-Guardring for overvoltage protection.
-Very tiny plastic SMD package.
-Ultra high-speed switching.
-Silicon epitaxial planar chip, metal silicon junction.
-Lead-free parts meet environmental
standards of MIL-STD-19500 /228
Mechanical data
0.106 (2.70)
0.091 (2.30)
0.012(0.3) Typ.
0.057 (1.45)
0.041 (1.05)
0.047 (1.2)
0.031 (0.8)
0.016(0.4) Typ.
-Case: JEDEC SOD-323, Molded plastic
-Terminals: Solde plated, solderable per
MIL-STD-750, method 2026.
-Polarity: Indicated by cathode band.
-Mounting position: Any
-Weight:0.008 gram(approx.).
0.016(0.4) Typ.
Dimensions in inches and (millimeter)
Maximum Ratings (at TA=25°C unless otherwise noted)
Symbol
CDBFN
140-HF
CDBFN
160-HF
Unit
Repetitive peak reverse voltage
VRRM
40
60
V
Maximum RMS voltage
VRMS
28
42
V
Continuous reverse voltage
VR
40
60
V
Maximum forward voltage @IF=1.0A
VF
0.55
0.70
V
Forward rectified current
IO
1.0
A
IFSM
30
A
IR
0.5
10
mA
RθJA
90
°C/W
Typ. diode junction capacitance (Note 1)
CJ
120
pF
Operating junction temperature
TJ
Parameter
Forward surge current, 8.3ms half sine wave
superimposed on rated load (JEDEC method)
Reverse current on VR=VRRM
O
@TA=25 C
O
@TA=100 C
Typ. thermal resistance, junction to ambient air
Storage temperature
-55 to +125
TSTG
-55 to +150
-65 to +150
°C
°C
Note 1: f=1MHz and applied 4V DC reverse voltage.
REV:C
Page 1
QW-JB001
Comchip Technology CO., LTD.
SMD Schottky Barrier Rectifiers
Ratings and Characteristic Curves(CDBFN140-HF Thru CDBFN160-HF)
Fig.1- Typical Forward Current
Derating Curve
Fig.2- Typical Forward Characteristics
100
IF, Instantaneous Forward Current, (A)
1.0
6
FN1
CDB
CDB
F
0-H
F
0.5
0-H
4
FN1
IO, Averaged Forward Current, (A)
1.3
50
100
150
200
1
FN
DB
40
F
-H
C
1
FN
DB
60
F
-H
1
0.1
O
TJ=25 C
Pulse width 300μs
1% duty cycle
0.3
0.5
0.7
0.9
1.1
1.3
1.5
TA, Ambient Temperature, (°C)
VF, Forward Voltage, (V)
Fig.3- Maximum Non-repetitive Peak
Forward Surge Current
Fig.4- Typical Junction Capacitance
30
350
TJ=25 OC
8.3ms single half
sine wave, JEDEC
method
24
CJ, Junction Capacitance, (pF)
IFSM, Peak Forward Surge Current, (A)
C
0.01
0.1
0
0
10
18
12
6
0
1
10
100
300
250
200
150
100
50
0
0.01
Number of Cycles at 60Hz
0.1
1
10
100
VR, Reverse Voltage, (V)
Fig.5- Typical Reverse Characteristics
IR, Reverse Current, (mA)
100
10
1
O
TJ=75 C
0.1
O
TJ=25 C
0.01
0
20
40
60
80
100
120
140
Percent of Rated Peak Reverse Voltage, (%)
REV:C
Page 2
QW-JB001
Comchip Technology CO., LTD.
SMD Schottky Barrier Diode
Reel Taping Specification
d
P0
P1
T
E
Index hole
F
W
B
Polarity
P
C
A
12
o
0
D2
D1 D
W1
Trailer
.......
.......
End
Device
.......
.......
Leader
.......
.......
.......
.......
10 pitches (min)
Start
10 pitches (min)
Direction of Feed
SOD-323
SOD-323
SYMBOL
A
B
C
d
D
D1
D2
(mm)
1.47 ± 0.10
2.95± 0.10
1.15 ± 0.10
1.50 ± 0.10
178 ± 1
62.0 MIN.
13.0 ± 0.50
(inch)
0.057 ± 0.004
0.116 ± 0.004
0.045 ± 0.004
0.059 ± 0.004
7.008 ± 0.040
2.44 MIN.
0.512 ± 0.0197
SYMBOL
E
F
P
P0
P1
W
W1
(mm)
1.75 ± 0.10
3.50 ± 0.10
4.00 ± 0.10
4.00 ± 0.10
2.00 ± 0.10
8.00 ± 0.30
11.4 ± 0.04
(inch)
0.069 ± 0.004
0.138 ± 0.004
0.157 ± 0.004
0.157 ± 0.004
0.079 ± 0.004
0.315 ± 0.012
0.449± 0.0016
REV:C
QW-JB001
Page 3
SMD Schottky Barrier Diode
Marking Code
Part Number
Marking Code
CDBFN140-HF
14
CDBFN160-HF
16
XX
XX=Product type marking code
Suggested PAD Layout
C
SOD-323
SIZE
(mm)
(inch)
A
1.500
0.059
B
1.000
0.039
C
1.300
0.051
A
B
Standard Packaging
Qty per Reel
Reel Size
(Pcs)
(inch)
3000
7
Case Type
SOD-323
REV:C
Page 4
QW-JB001
Comchip Technology CO., LTD.