SMD Schottky Barrier Rectifiers CDBFN140-G Thru. CDBFN160-G Voltage: 40 to 60 Volts Current: 1.0 Amp RoHS Device SOD-323 Features -Batch process design, excellent power dissipation offers better reverse leakage current. -Low profile surface mounted application in order to optimize board space. -Low power loss, high efficiency. 0.106 (2.70) 0.091 (2.3) 0.012(0.3) Typ. -High current capability, low forward voltage dorp. -High surge capability. 0.057 (1.45) 0.041 (1.05) -Guardring for overvoltage protection. -Very iny plastic SMD package. -Ultra high-speed switching. -Silicon epitaxial planarchip, metal silicon junction. -Lead-free parts meet environmental standards of MIL-STD-19500 /228 0.047 (1.2) 0.031 (0.8) 0.016(0.4) Typ. Mechanical data 0.016(0.4) Typ. -Case: JEDEC SOD-323, Molded plastic -Terminals: Solde plated, solderable per MIL-STD-750, method 2026. -Polarity: Indicated by cathode band. -Mounting position: Any -Weight: 0.008 gram(approx.). Dimensions in inches and (millimeter) Maximum Ratings (at T =25°C unless otherwise noted) A Symbol CDBFN 140-G CDBFN 160-G Unit Repetitive peak reverse voltage VRRM 40 60 V Maximum RMS voltage VRMS 28 42 V Continuous reverse voltage VR 40 60 V Maximum forward voltage @IF=1.0A VF 0.55 0.70 V Forward rectified current IO 1.0 A IFSM 30 A IR 0.5 10 mA RθJA 90 °C/W Typ. diode junction capacitance (Note 1) CJ 120 pF Operating junction temperature TJ Parameter Forward surge current, 8.3ms half sine wave superimposed on rated load (JEDEC method) Reverse current on VR=VRRM O @TA=25 C O @TA=100 C Typ. thermal resistance, junction to ambient air Storage temperature -55 to +125 TSTG -55 to +150 -65 to +150 °C °C Note 1: f=1MHz and applied 4V DC reverse voltage. REV:F Page 1 QW-BB022 Comchip Technology CO., LTD. SMD Schottky Barrier Rectifiers Ratings and Characteristic Curves(CDBFN140-G Thru CDBFN160-G) Fig.1- Typical Forward Current Derating Curve Fig.2- Typical Forward Characteristics 100 IF, Instantaneous Forward Current, (A) 1.0 6 FN1 CDB CDB 0-G 0.5 0-G 4 FN1 IO, Averaged Forward Current, (A) 1.3 50 100 150 200 1 FN DB 40 -G C 1 FN DB 60 -G 1 0.1 O TJ=25 C Pulse width 300μs 1% duty cycle 0.3 0.5 0.7 0.9 1.1 1.3 1.5 TA, Ambient Temperature, (°C) VF, Forward Voltage, (V) Fig.3- Maximum Non-repetitive Peak Forward Surge Current Fig.4- Typical Junction Capacitance 30 350 TJ=25 OC 8.3ms single half sine wave, JEDEC method 24 CJ, Junction Capacitance, (pF) IFSM, Peak Forward Surge Current, (A) C 0.01 0.1 0 0 10 18 12 6 0 1 10 100 300 250 200 150 100 50 0 0.01 Number of Cycles at 60Hz 0.1 1 10 100 VR, Reverse Voltage, (V) Fig.5- Typical Reverse Characteristics IR, Reverse Current, (mA) 100 10 1 O TJ=75 C 0.1 O TJ=25 C 0.01 0 20 40 60 80 100 120 140 Percent of Rated Peak Reverse Voltage, (%) REV:F Page 2 QW-BB022 Comchip Technology CO., LTD. SMD Schottky Barrier Rectifiers Reel Taping Specification d P0 P1 T E Index hole F W B P C A 12 o 0 D2 D1 D W1 Trailer ....... ....... End Device ....... ....... Leader ....... ....... ....... ....... 10 pitches (min) Start 10 pitches (min) Direction of Feed SOD-323 SOD-323 SYMBOL A B C d D D1 D2 (mm) 1.47 ± 0.10 2.95± 0.10 1.15 ± 0.10 1.50 ± 0.10 178 ± 1 62.0 MIN. 13.0 ± 0.20 (inch) 0.057 ± 0.004 0.116 ± 0.004 0.045 ± 0.004 0.059 ± 0.004 7.008 ± 0.040 2.44 MIN. 0.512 ± 0.008 SYMBOL E F P P0 P1 W W1 (mm) 1.75 ± 0.10 3.50 ± 0.05 4.00 ± 0.10 4.00 ± 0.10 2.00 ± 0.05 8.00 ± 0.30 11.4 MAX. (inch) 0.069 ± 0.004 0.138 ± 0.002 0.157 ± 0.004 0.157 ± 0.004 0.079 ± 0.002 0.315 ± 0.012 0.449 MAX REV:F Page 3 QW-BB022 Comchip Technology CO., LTD. SMD Schottky Barrier Rectifiers Marking Code Part Number Marking Code CDBFN140-G 14 CDBFN160-G 16 XX XX=Product type marking code Suggested PAD Layout C SOD-323 SIZE (mm) (inch) A 1.500 0.059 B 1.000 0.039 C 1.300 0.051 A B Standard Packaging REEL PACK Case Type SOD-323 REEL Reel Size ( pcs ) (inch) 3,000 7 REV:F Page 4 QW-BB022 Comchip Technology CO., LTD.