1/4 STRUCTURE Silicon Monolithic Integrated Circuit PRODUCT NAME IC for DC-AC inverter control TYPE BD9241F FUNCTION 1.For 36Vhigh voltage process/1ch Full Bridge control 2.Current, voltage feedback control 3.Built-in soft start circuit 4.Built-in timer-latch circuit 5.Built-in the malfunction preventing circuit (UVLO) when lower voltage 6.Shifting to current consumption save mode from STB terminal 7.External PWM,DC voltage control and current linear control ABSOLUTE MAXIMUM RATINGS(Ta=25℃) Parameter Symbol Power Supply Voltage VCC Operating Temperature Range Topr Storage Temperature Range Tstg allowable loss Pd Junction Temperature Tjmax Rating 36 Unit V -40~+85 -55~+150 687* +150 ℃ ℃ mW ℃ *Reduced by 5.5mW/℃ when Ta=25℃ or over (when 70.0mm×70.0mm×1.6mm board is mounting) OPERATING Range Parameter Power Supply Voltage Terminal Voltage (SRT,RT,VS,IS,COMP,DUT Y) Drive output frequency BCT oscillation frequency Symbol VCC Range 9~30 Unit V - -0.3~5.5 V fOUT fBCT 30~90 0.10~0.50 kHz kHz . REV. A 2/4 ○ELECTRICAL CHARACTERISTICS(Ta=25℃,VCC=15V) Rating Symbol Parameter MIN Standard MAX Unit Condition ((devices whole)) Circuit Current when standby ICC1 ICC2 - - 2.3 0 5.0 10 mA μA ((Standby control, SEL control) Standby Terminal voltageH Standby Terminal voltageL VstH VstL 2.0 -0.3 - - VCC 0.8 V V Circuit Current at operating SEL Terminal voltage H SEL Terminal voltage L ((TimerーLatch)) Voltage setting time Current setting time ((OSC Block)) Active edge setting current MAX DUTY Soft start time SRT Terminal ON Resistant ((UVLOBLOCK)) Voltage starting operation Hysteresis width VSELH - 2.4 VCC V System ON System OFF DUTY Terminal 0.5V→2.0V Burst dimming 100%→0% DUTY Terminal 0.5V→2.0V Burst dimming 0%→100% VSELL -0.3 - 0.8 V VCP ICP 1.9 0.85 2.0 1.0 2.1 1.15 V μA Iact MAXDUTY TSS RSRT 1.25/RT 44 50 - 1.5/RT 46.4 100 100 1.75/RT 49 150 200 A % msec Ω VuvloH ΔVuvloH 6 0.15 7 0.3 8 0.6 V V VIS VVS IIS1 IIS2 IVS VISC 1.225 1.210 - 40 - 0.45 1.250 1.250 - 50 - 0.50 1.275 1.290 0.9 60 1.0 0.55 V V μA μA μA V VOUTPH VOUTPL VOUTNH VOUTNL RsinkP1,2 R source P1,2 RsinkN1,2 RsourceN1,2 FOUT VCC-0.3 VCC-10.3 8.3 - - - - - 48.5 VCC VCC-9.3 9.3 0 3 6 4 6 50 - VCC-8.3 10.3 0.3 10 12 10 12 51.5 V V V V Ω Ω Ω Ω kHz Isink=10mA Isource=10mA Isink=10mA Isource=10mA RT=100kΩ VburH VburL FBOSC 1.9 0.4 337 2.0 0.5 350 2.1 0.6 363 V V Hz BCT=4700pF VCOMPH VCOMP 1.9 0.1 2.00 0.2 2.1 0.4 V V RT=100kΩ ((Feedback system)) IS Threshold voltage VS Threshold voltage IS Source current1 IS Source current 2 VS Source current ISCOMP Detecting voltage ((Output block) ) P1,P2 Output voltage H P1,P2 Output voltageL N1,N2 Output voltageH N1,N2 Output voltageL P1,P2 Output sink resistance P1,P2 Output source resistance N1,N2 Output sink resistance N1,N2 Output source resistance Drive output frequency ((Burst mode setting block) ) Triangular wave upper voltage Triangular wave lower voltage Triangular wave frequency ((COMP Block)) Over-voltage detecting voltage Hysteresis width (It is not the radiation-proof design for this product.) REV. A DUTY=2.0V DUTY=0V、IS=0.5V : : : : 3/4 ○Dimensional outline drawing Item No (The max dimension with burr:11.55) BD9241 1 Lot No. SOP18 (Unit:mm) ○ Block diagram ○Terminal description STB block PWM block Logic block Out put block F/B block Terminal No Terminal name 1 N2 External FET drive circuit output terminal 2 P2 External FET drive circuit output terminal 3 VCC 4 SEL Dimming(POS,NEG)select terminal 5 CP Timer ー latch setting capacity connection terminal 6 GND 7 SRT 8 RT 9 VS Error amplifier input terminal② 10 IS Error amplifier input terminal① 11 FB Error amplifier output terminal 12 COMP Output block Reg block Internal REG(5V) Protection block REV. A 13 BCT 14 DUTY Function Power terminal GROUND Connecting terminal for charging discharging current setting resistance of block Connecting terminal for charging discharging current setting resistance of block and OSC and OSC Over-voltage detecting terminal Connecting terminal for charging and discharging current setting capacity of BOSC block. Switching terminal of PWM mode and burst mode 15 STB 16 PGND External FET drive circuit GND terminal Standby switch terminal 17 P1 External FET drive circuit output terminal 18 N1 External FET drive circuit output terminal 4/4 〇Usage notes 1. About the absolute maximum ratings The damage may occur If absolute maximum rating such as applied voltage and operating temperature range etc. is exceeded, moreover such destructive conditions as short mode or open mode etc. can not be assumed, so If a particular mode such as exceeding the absolute maximum rating is assumed, please consider taking physical safety measures such as fuse etc. 2. As long as being operation range, the operation of circuit function will be assured in the range of operating ambient temperature. About characteristic value, the specification value of electric characteristic can’t be guaranteed, but the characteristic value doesn’t change rapidly in these ranges. 3. When attaching to the printed substrate, pay special attention to the direction and proper placement of the IC. If the IC is attached incorrectly, it may be destroyed. Destruction can also occur when there is a short, which can be caused by foreign objects entering between outputs or an output and the power GND. 4. Please be careful that there is a possibility of malfunction which is happening when you use it in a strong electromagnetic field. 5. The potential of GND terminal and PGND terminal is used with not over ±0.3V please. 6. This IC has a built-in Temperature Protection Circuit (TSD circuit). The temperature protection circuit (TSD circuit) is only to cut off the IC from thermal runaway, and has not been designed to protect or compensate the IC. Therefore, the user should not plan to activate this circuit with continued operation in mind. 7. Although the quality of this product has been tightly controlled ,the damage may occur If absolute maximum rating such as applied voltage and operating temperature range etc. is exceeded, moreover such destructive conditions as short mode or open mode etc. can not be assumed, so If a particular mode such as exceeding the absolute maximum rating is assumed, please consider taking a measures such as fuse etc. 8. Regarding the external FET, since gate voltage will be changed regarding parasitic capacity between drain gates while switching the drain voltage, please think over dispersion etc of our company’s IC, please select FET with sufficient margin. 9. CP timer does not operate during the time of soft start. 10.To prevent the destruction from external static electricity, please give resistance to the pin which directly link with connector etc. 11.This IC is a monolithic IC, and between each element there is a P+ isolation and P substrate for element separation. There is a P-N junction and other parasitic elements formed between this P-layer and each element’s N-layer, as shown in Fig. when the resistors and transistors are connected to the terminal, ○ When GND>(terminal A) at the resistance, or GND>(terminal B) at the transistor (NPN), the P-N junction operates as a parasitic diode. ○ Also, when GND>(terminal B) at the transistor, a parasitic NPN transistor operates by the N-layer of other elements which close to the aforementioned parasitic diode. With the IC’s configuration, the production of parasitic elements by the relationships of the electrical potentials is inevitable. The operation of the parasitic elements can also interfere with the circuit operation, leading to malfunction and even destruction. Therefore, uses which cause the parasitic elements to operate, such as applying voltage to the input terminal which is lower than the GND (P-substrate), should be avoided. トランジスタ(NPN) Transistor (NPN) 抵抗 Resistance B (端子A) (端子B) Terminal B (Terminal A) P P+ P P+ N N N E C N + GND P P + N N N P基板 P基板 P Substrate P Substrate GND GND Parasitic Element 寄生素子 寄生素子 Parasitic Element Terminal B (端子B) B C (端子A) (Terminal A) E 寄生素子 GND Parasitic Element GND 近接するほかの素子 other elements close to 寄生素子 Parasitic Element Fig.1 Simple Structure of Monolithic IC 図-1 モノリシックICの簡易構造 REV. A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. 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