POL Power Table of Contents Bootstrap, Diodes..............................................................................................................................................................3 Controllers, Current Sense Resistors............................................................................................................................. 4 High-Side Switch, Diodes................................................................................................................................................. 5 High-Side Switch, Gate Drivers........................................................................................................................................ 6 High-Side Switch, N-Channel MOSFET........................................................................................................................... 7 High-Side Switch, P-Channel MOSFET........................................................................................................................... 8 High-Side Switch, SkyFET®............................................................................................................................................. 9 Input, Capacitors............................................................................................................................................................. 10 Low-Side Switch, Diodes................................................................................................................................................ 11 Low-Side Switch, Gate Drivers.......................................................................................................................................12 Low-Side Switch, N-Channel MOSFET.......................................................................................................................... 13 Low-Side Switch, SkyFET®............................................................................................................................................ 14 Output, Capacitors.......................................................................................................................................................... 15 page 1 POL Power Vishay components used for point-of-load solutions may include: • Power MOSFETs • Diodes and Rectifiers • Controller ICs • Capacitors • Resistors • Inductors • Shunt Resistors Application Overview Non-isolated point-of-load converters are generally used in intermediate bus architectures to step down the bus voltage. This multi-stage power conversion is widely implemented in telecom, computer, and consumer appliances. The POL modules or on-board POL circuits can be placed close to the payload, thereby adding flexibility to the design. page 2 POL Power : Bootstrap, Diodes Schottky Product Name Status Description Features Package IR0530CSPTRPbF FlipKY - Schottky Diode 0.5A, 30V, Vf=0.33V SMD CSP 1.2x0.9 MSS1P3L Surface Mount Schottky Barrier Rectifier 1A, 30V, Vf=0.35V SMD MicroSMP MSS1P4 Surface Mount Schottky Barrier Rectifier 1A, 40V, Vf=0.41V SMD MicroSMP SL03 Small Signal Schottky Diode 1.1A, 30V, Vf=0.395V SMD SMF SL04 Small Signal Schottky Diode 1.1A, 40V, Vf=0.45V SMD SMF Q-Level page 3 POL Power : Controllers, Current Sense Resistors Current Sense Resistors Product Name WSL Status Description Power Metal Strip, for current sensing; low resistance values; tight tolerances; low TCR; Features R0005 to R500, 1% TCR <= ± 75ppm P70 = 0.1W - 2W Package Q-Level SMD 0603-2816 page 4 POL Power : High-Side Switch, Diodes Schottky Product Name Status Description Features Package MSS2P3 Surface Mount Schottky Barrier Rectifier 2A, 30V, Vf=0,47V SMD MicroSMP SS3P3 Surface Mount Schottky Barrier Rectifier High Current Density 3A, 30V, Vf=0.43V SMD SMP Q-Level page 5 POL Power : High-Side Switch, Gate Drivers N+P Channel MOSFETs Product Name Status Description Features Package Si3586DV N- and P-Channel 20-V (D-S) MOSFET n-ch:RDS(on)=0.070Ω@2.5V; SMD p-ch:RDS(on)=0.116Ω@-2.5V TSOP-6 Qg<5nC Si5504BDC N- and P-Channel 30-V (D-S) MOSFET n-CH:RDS(on)=0.100Ω@4.5V;SMD p-CH:RDS(on)=0.235Ω@-4.5V1206-8 ChipFET Qg<2.2nC SiA513DJ N- and P-Channel 20-V (D-S) MOSFET n-ch:RDS(on)=0.092Ω@2.5V; SMD p-ch:RDS(on)=0.185Ω@-2.5V PowerPAK Qg<3.5nC SC-70-6 Q-Level page 6 POL Power : High-Side Switch, N-Channel MOSFET MOSFETs Product Name Status Description Features Package Si4386DY N-Channel 30-V (D-S) MOSFET RDS(on)=0.007Ω@10V; RDS(on)=0.0095Ω@4.5V; Qg=11nC SMD SO-8 Si4634DY N-Channel 30-V (D-S) MOSFET RDS(on)=0.0052Ω@10V; RDS(on)=0.0067Ω@4.5V; Qg=21.5nC SMD SO-8 Si4660DY N-Channel 25-V (D-S) MOSFET RDS(on)=0.0058Ω@10V; RDS(on)=0.007Ω@4.5V; Qg=17nC SMD SO-8 Si7110DN N-Channel 20-V (D-S) MOSFET RDS(on)=0.0053Ω@10V; RDS(on)=0.078Ω@4.5V; Qg=14nC SMD PowerPAK 1212-8 Si7114DN N-Channel 30-V (D-S) MOSFET RDS(on)=0.0075Ω@10V; RDS(on)=0.010Ω@4.5V; Qg=12.5nC SMD PowerPAK 1212-8 Si7686DP N-Channel 30-V (D-S) MOSFET RDS(on)=0.0095Ω@10V; RDS(on)=0.014Ω@4.5V; Qg=9.2nC SMD PowerPAK SO-8 Si7804DN N-Channel 30-V (D-S) MOSFET RDS(on)=0.0185Ω@10V; RDS(on)=0.030Ω@4.5V; Qg=8.7nC SMD PowerPAK 1212-8 SiE822DF N-Channel 20-V (D-S) MOSFET RDS(on)=0.0034Ω@10V; RDS(on)=0.0055Ω@4.5V; Qg=24nC SMD PolarPAK SiE844DF N-Channel 30-V (D-S) MOSFET RDS(on)=0.007Ω@10V; RDS(on)=0.010Ω@4.5V; Qg=13.1nC SMD PolarPAK SiR402DP N-Channel 30-V (D-S) MOSFET RDS(on)=0.006Ω@10V; RDS(on)=0.008Ω@4.5V; Qg=14nC SMD PowerPAK SO-8 SiR462DP N-Channel 30-V (D-S) MOSFET RDS(on)=0.0079Ω@10V; RDS(on)=0.0095Ω@4.5V; Qg=8.8nC SMD PowerPAK SO-8 SiR892DP N-Channel 25-V (D-S) MOSFET RDS(on)=0.0032Ω@10V; RDS(on)=0.0042Ω@4.5V; Qg=20nC SMD PowerPAK SO-8 Q-Level page 7 POL Power : High-Side Switch, P-Channel MOSFET MOSFETs Product Name Status Description Features Package Si4425BDY P-Channel 30-V (D-S) MOSFET RDS(on)=0.012Ω@-10V; RDS(on)=0.019Ω@-4.5V; Qg=32nC SMD SO-8 Si4835DDY P-Channel 30-V (D-S) MOSFET RDS(on)=0.018Ω@-10V; RDS(on)=0.030Ω@-4.5V; Qg=22nC SMD SO-8 Si7421DN P-Channel 30-V (D-S) MOSFET RDS(on)=0.025Ω@-10V; RDS(on)=0.043Ω@-4.5V; Qg=13nC SMD PowerPAK 1212-8 Si7423DN P-Channel 30-V (D-S) MOSFET RDS(on)=0.018Ω@-10V; RDS(on)=0.030Ω@-4.5V; Qg=20nC SMD PowrPAK 1212-8 Si7483ADP P-Channel 30-V (D-S) MOSFET RDS(on)=0.0057Ω@-10V; RDS(on)=0.0095Ω@-4.5V; Qg=45nC SMD PowerPAK SO-8 Q-Level page 8 POL Power : High-Side Switch, SkyFET® SkyFET Product Name Status Description Features Package Si4642DY N-Channel 30-V (D-S) MOSFET with Schottky Diode RDS(on)=0.00375Ω@10V; RDS(on)=0.0047Ω@4.5V; Qg=35.7nC SMD SO-8 SiE726DF N-Channel 30-V (D-S) MOSFET with Schottky Diode RDS(on)=0.0024Ω@10V; RDS(on)=0.0033Ω@4.5V; Qg=50nC SMD PolarPAK Q-Level page 9 POL Power : Input, Capacitors Tantalum Capacitors Product Name Status Description Features Package 594D Tantalum Chip Capacitors 4-50V, 1-1500uF TANTAMOUNT®, Conformal Coated, Maximum CV, Low ESR SMD B, C, D, R -case TR3 Tantalum Chip Capacitors TANTAMOUNT®, Low ESR, Molded Case SMD A, B, C, D, E, V -case 4-50V, 0.47-680uF Q-Level page 10 POL Power : Low-Side Switch, Diodes Schottky Product Name Status Description Features Package MSS2P3 Surface Mount Schottky Barrier Rectifier 2A, 30V, Vf=0,47V SMD MicroSMP SS3P3 Surface Mount Schottky Barrier Rectifier High Current Density 3A, 30V, Vf=0.43V SMD SMP SS5P3 Surface Mount Schottky Barrier Rectifier High Current Density 5A, 30V, Vf=0.403V SMD SMPC Q-Level page 11 POL Power : Low-Side Switch, Gate Drivers N+P Channel MOSFETs Product Name Status Description Features Package Si3586DV N- and P-Channel 20-V (D-S) MOSFET n-ch:RDS(on)=0.070Ω@2.5V; SMD p-ch:RDS(on)=0.116Ω@-2.5V TSOP-6 Qg<5nC Si5504BDC N- and P-Channel 30-V (D-S) MOSFET n-CH:RDS(on)=0.100Ω@4.5V;SMD p-CH:RDS(on)=0.235Ω@-4.5V1206-8 ChipFET Qg<2.2nC SiA513DJ N- and P-Channel 20-V (D-S) MOSFET n-ch:RDS(on)=0.092Ω@2.5V; SMD p-ch:RDS(on)=0.185Ω@-2.5V PowerPAK Qg<3.5nC SC-70-6 Q-Level page 12 POL Power : Low-Side Switch, N-Channel MOSFET MOSFETs Product Name Status Description Features Package Si4378DY N-Channel 20-V (D-S) MOSFET RDS(on)=0.0027Ω@4.5V; RDS(on)=0.0042Ω@2.5V; Qg=55nC SMD SO-8 Si4398DY N-Channel 20-V (D-S) MOSFET RDS(on)=0.0028Ω@4.5V; RDS(on)=0.0042Ω@2.5V; Qg=34nC SMD SO-8 Si7108DN N-Channel 20-V (D-S) MOSFET RDS(on)=0.0049Ω@10V; RDS(on)=0.0061Ω@4.5V; Qg=20nC SMD PowerPAK 1212-8 Si7192DP N-Channel 30-V (D-S) MOSFET RDS(on)=0.0019Ω@10V; RDS(on)=0.00225Ω@4.5V; Qg=43.5nC SMD PowerPAK SO-8 Si7866ADP N-Channel 20-V (D-S) MOSFET RDS(on)=0.0024Ω@10V; RDS(on)=0.0030Ω@4.5V; Qg=39nC SMD PowerPAK SO-8 SiE808DF N-Channel 20-V (D-S) MOSFET RDS(on)=0.0016Ω@10V; RDS(on)=0.0025Ω@4.5V; Qg=46nC SMD PolarPAK SiE810DF N-Channel 20-V (D-S) MOSFET RDS(on)=0.0014Ω@10V; RDS(on)=0.0016Ω@4.5V; Qg=90nC SMD PolarPAK SiR890DP N-Channel 20-V (D-S) MOSFET RDS(on)=0.0029Ω@10V; RDS(on)=0.0040Ω@4.5V; Qg=20nC SMD PowerPAK SO-8 Q-Level page 13 POL Power : Low-Side Switch, SkyFET® SkyFET Product Name Status Description Features Package Si4642DY N-Channel 30-V (D-S) MOSFET with Schottky Diode RDS(on)=0.00375Ω@10V; RDS(on)=0.0047Ω@4.5V; Qg=35.7nC SMD SO-8 SiE726DF N-Channel 30-V (D-S) MOSFET with Schottky Diode RDS(on)=0.0024Ω@10V; RDS(on)=0.0033Ω@4.5V; Qg=50nC SMD PolarPAK Q-Level page 14 POL Power : Output, Capacitors Tantalum Capacitors Product Name Status Description Features Package 594D Tantalum Chip Capacitors 4-50V, 1-1500uF TANTAMOUNT®, Conformal Coated, Maximum CV, Low ESR SMD B, C, D, R-case TR3 Tantalum Chip Capacitors TANTAMOUNT®, Low ESR, Molded Case SMD A, B, C, D, E, V -case 4-50V, 0.47-680uF Q-Level page 15 page 16