New Product SiA513DJ Vishay Siliconix N- and P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel RDS(on) (Ω) Qg (Typ.) a 0.060 at VGS = 4.5 V 4.5 0.092 at VGS = 2.5 V 4.5a 0.110 at VGS = - 4.5 V - 4.5a 0.185 at VGS = - 2.5 V - 4.5a 20 - 20 ID (A) 3.5 nC 3 nC • Halogen-free • TrenchFET® Power MOSFETs • New Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area - Low On-Resistance RoHS COMPLIANT APPLICATIONS PowerPAK SC-70-6 Dual • Portable Devices 1 S1 3 D2 D1 D1 6 Marking Code D2 4 S2 G2 EBX Part # code G2 5 2.05 mm S2 D1 2 G1 2.05 mm G1 XXX Lot Traceability and Date code Ordering Information: SiA513DJ-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 D2 N-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol VDS VGS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C IDM Pulsed Drain Current Source Drain Current Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e ID TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C IS PD N-Channel 20 P-Channel - 20 ± 12 4.5a 4.5a 4.5a, b, c 3.2b, c 15 4.5a - 4.5a - 4.5a - 3.3b, c - 2.4b, c - 10 - 4.5a 1.6b, c 6.5 5 - 1.6b, c 6.5 5 1.9b, c 1.2b, c 1.9b, c 1.2b, c TJ, Tstg - 55 to 150 260 Unit V A W °C THERMAL RESISTANCE RATINGS N-Channel Parameter Symbol RthJA RthJC Typ. Max. P-Channel Typ. Max. Unit t≤5s 52 65 52 65 Maximum Junction-to-Ambientb, f °C/W Maximum Junction-to-Case (Drain) Steady State 12.5 16 12.5 16 Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 110 °C/W. Document Number: 70443 S-80437-Rev. B, 03-Mar-08 www.vishay.com 1 New Product SiA513DJ Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Forward Transconductanceb VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs VGS = 0 V, ID = 250 µA N-Ch 20 VGS = 0 V, ID = - 250 µA P-Ch - 20 ID = 250 µA N-Ch 22 ID = - 250 µA P-Ch - 16 ID = 250 µA N-Ch - 3.5 V mV/°C ID = - 250 µA P-Ch VDS = VGS, ID = 250 µA N-Ch 0.6 1.5 VDS = VGS, ID = - 250 µA P-Ch - 0.6 - 1.5 VDS = 0 V, VGS = ± 12 V 2.5 N-Ch ± 100 P-Ch ± 100 VDS = 20 V, VGS = 0 V N-Ch 1 VDS = - 20 V, VGS = 0 V P-Ch -1 VDS = 20 V, VGS = 0 V, TJ = 55 °C N-Ch 10 VDS = - 20 V, VGS = 0 V, TJ = 55 °C P-Ch VDS ≥ 5 V, VGS = 4.5 V N-Ch 10 VDS ≤ - 5 V, VGS = - 4.5 V P-Ch -5 V nA µA - 10 A VGS = 4.5 V, ID = 3.4 A N-Ch 0.050 0.060 VGS = - 4.5 V, ID = - 2.5 A P-Ch 0.091 0.110 VGS = 2.5 V, ID = 1.1 A N-Ch 0.076 0.092 VGS = - 2.5 V, ID = - 0.54 A P-Ch 0.152 0.185 VDS = 10 V, ID = 3.4 A N-Ch 8 VDS = - 10 V, ID = - 2.5 A P-Ch 3.5 Ω S Dynamica Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Crss Qg N-Channel VDS = 10 V, VGS = 0 V, f = 1 MHz P-Channel VDS = - 10 V, VGS = 0 V, f = 1 MHz N-Ch 360 P-Ch 250 N-Ch 70 P-Ch 70 N-Ch 40 pF P-Ch 45 VDS = 10 V, VGS = 10 V, ID = 4.5 A N-Ch 7.5 VDS = - 10 V, VGS = - 10 V, ID = - 3.3 A P-Ch 6 9 N-Ch 3.5 5.3 4.5 N-Channel VDS = 10 V, VGS = 4.5 V, ID = 4.5 A P-Ch 3 N-Ch 0.9 P-Ch 0.7 N-Ch 0.7 P-Ch 0.9 N-Ch 2.5 P-Ch 8 Qgs Gate-Drain Charge Qgd P-Channel VDS = - 10 V, VGS = - 4.5 V, ID = - 3.3 A Gate Resistance Rg f = 1 MHz 12 nC Ω Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. www.vishay.com 2 Document Number: 70443 S-80437-Rev. B, 03-Mar-08 New Product SiA513DJ Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Dynamica Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(on) tr td(off) tf td(on) tr N-Channel VDD = 10 V, RL = 2.8 Ω ID ≅ 3.6 A, VGEN = 4.5 V, Rg = 1 Ω P-Channel VDD = - 10 V, RL = 3.9 Ω ID ≅ - 2.6 A, VGEN = - 4.5 V, Rg = 1 Ω N-Channel VDD = 10 V, RL = 2.8 Ω ID ≅ 3.6 A, VGEN = 10 V, Rg = 1 Ω tf P-Channel VDD = - 10 V, RL = 3.9 Ω ID ≅ - 2.6 A, VGEN = - 10 V, Rg = 1 Ω IS TC = 25 °C td(off) N-Ch 10 15 P-Ch 20 30 N-Ch 40 60 P-Ch 45 70 N-Ch 20 30 P-Ch 15 25 N-Ch 30 45 P-Ch 10 15 N-Ch 5 10 P-Ch 4 8 N-Ch 15 25 20 P-Ch 12 N-Ch 15 25 P-Ch 12 20 N-Ch 10 15 P-Ch 5 10 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time ISM VSD - 4.5 N-Ch 15 P-Ch 0.8 1.2 IS = - 2.6 A, VGS = 0 V P-Ch - 0.8 - 1.2 Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta P-Channel IF = - 2.6 A, di/dt = - 100 A/µs, TJ = 25 °C A - 10 N-Ch trr tb 4.5 P-Ch IS = 3.6 A, VGS = 0 V N-Channel IF = 3.6 A, di/dt = 100 A/µs, TJ = 25 °C Reverse Recovery Rise Time N-Ch N-Ch 15 30 P-Ch 20 40 N-Ch 10 20 P-Ch 10 20 N-Ch 10 P-Ch 8 N-Ch 5 P-Ch 12 V ns nC ns Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 70443 S-80437-Rev. B, 03-Mar-08 www.vishay.com 3 New Product SiA513DJ Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 15 5 VGS = 5 thru 3 V 4 I D - Drain Current (A) I D - Drain Current (A) 12 9 2.5 V 6 2V 3 2 TC = 125 °C 1V 3 1 TC = 25 °C 1.5 V 0 0.0 0.5 1.0 1.5 2.0 TC = - 55 °C 2.5 0 0.0 3.0 0.5 1.0 VDS - Drain-to-Source Voltage (V) Output Characteristics 2.0 2.5 3.0 Transfer Characteristics 0.20 500 0.16 400 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 1.5 VGS - Gate-to-Source Voltage (V) 0.12 VGS = 2.5 V 0.08 VGS = 4.5 V Ciss 300 200 0.04 100 0.00 0 Coss Crss 0 3 6 9 12 15 0 4 8 16 20 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current Capacitance 10 1.6 ID = 4.5 A ID = 3.4 A VGS = 2.5 V 8 VDS = 10 V 6 VDS = 16 V 4 2 (Normalized) 1.4 RDS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 12 1.2 VGS = 4.5 V 1.0 0.8 0 0 2 4 6 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 4 8 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 70443 S-80437-Rev. B, 03-Mar-08 New Product SiA513DJ Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 0.30 ID = 3.4 A 10 R DS(on) - On-Resistance (Ω) I S - Source Current (A) 0.25 TJ = 150 °C 0.20 0.15 TA = 125 °C 0.10 0.05 TJ = 25 °C TA = 25 °C 0.00 1 0.0 0.2 0.4 0.6 0.8 1.0 0 1.2 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 20 1.4 1.3 ID = 250 µA 15 1.1 Power (W) VGS(th) (V) 1.2 1.0 10 0.9 0.8 5 0.7 0.6 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 1 10 TJ - Temperature (°C) Pulse (s) Threshold Voltage Single Pulse Power 100 1000 I D - Drain Current (A) 100 10 Limited by R DS(on)* 100 µs 1 1 ms 10 ms 100 ms 1 s, 10 s DC 0.1 TA = 25 °C Single Pulse BVDSS Limited 0.01 0.1 1 * VGS 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 70443 S-80437-Rev. B, 03-Mar-08 www.vishay.com 5 New Product SiA513DJ Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 8 12 Power Dissipation (W) ID - Drain Current (A) 10 8 6 Package Limited 4 6 4 2 2 0 0 0 25 50 75 100 125 150 25 50 75 100 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power Derating 125 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 Document Number: 70443 S-80437-Rev. B, 03-Mar-08 New Product SiA513DJ Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Notes: 0.05 PDM 0.02 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 85 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Document Number: 70443 S-80437-Rev. B, 03-Mar-08 www.vishay.com 7 New Product SiA513DJ Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 5 VGS = 5 thru 3 V 4 ID - Drain Current (A) I D - Drain Current (A) 8 2.5 V 6 4 2V 3 2 TC = 125 °C 2 1 TC = 25 °C 1.5 V 0 0.0 0.5 1.0 1.5 2.0 2.5 TC = - 55 °C 0 0.0 3.0 0.5 VDS - Drain-to-Source Voltage (V) 1.0 1.5 2.0 2.5 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.30 400 300 0.20 VGS = 2.5 V 0.15 VGS = 4.5 V 0.10 Ciss C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 0.25 200 100 Coss 0.05 Crss 0.00 0 0 2 4 6 8 10 0 4 8 16 20 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current Capacitance 1.6 10 ID = 2.5 A ID = 3.3 A VGS = 2.5 V 1.4 VDS = 10 V 6 VDS = 16 V 4 (Normalized) 8 R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 12 1.2 VGS = 4.5 V 1.0 0.8 2 0 0 2 4 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 8 6 8 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 70443 S-80437-Rev. B, 03-Mar-08 New Product SiA513DJ Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 0.4 10 R DS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 2.5 A TJ = 150 °C 0.3 0.2 TA = 125 °C 0.1 TA = 25 °C TJ = 25 °C 0.0 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1 1.4 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source 20 1.2 1.1 15 1.0 Power (W) VGS(th) (V) ID = 250 µA 0.9 10 5 0.8 0.7 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 1 10 TJ - Temperature (°C) Pulse (s) Threshold Voltage Single Pulse Power 100 1000 10 Limited by R DS(on)* I D - Drain Current (A) 100 µs 1 1 ms 10 ms 100 ms 1s 10 s DC 0.1 TA = 25 °C Single Pulse 0.01 0.1 BVDSS Limited 1 * VGS 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 70443 S-80437-Rev. B, 03-Mar-08 www.vishay.com 9 New Product SiA513DJ Vishay Siliconix 8 8 6 6 Power Dissipation (W) I D - Drain Current (A) P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Package Limited 4 4 2 2 0 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating* 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) Power Derating * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 10 Document Number: 70443 S-80437-Rev. B, 03-Mar-08 New Product SiA513DJ Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Notes: 0.05 PDM 0.02 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 85 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?70443. Document Number: 70443 S-80437-Rev. B, 03-Mar-08 www.vishay.com 11 Package Information Vishay Siliconix b e PIN1 PIN3 PIN1 PIN2 PIN3 PIN5 K1 E1 E1 K PIN6 K3 D1 D1 K D2 D1 E3 E1 E2 K4 K L PIN2 b e L PowerPAK® SC70-6L PIN6 PIN4 K2 PIN5 K1 K2 BACKSIDE VIEW OF SINGLE PIN4 K2 BACKSIDE VIEW OF DUAL A D C A1 E Notes: 1. All dimensions are in millimeters 2. Package outline exclusive of mold flash and metal burr 3. Package outline inclusive of plating Z z DETAIL Z SINGLE PAD DIM A MILLIMETERS DUAL PAD INCHES MILLIMETERS INCHES Min Nom Max Min Nom Max Min Nom Max Min Nom Max 0.675 0.75 0.80 0.027 0.030 0.032 0.675 0.75 0.80 0.027 0.030 0.032 A1 0 - 0.05 0 - 0.002 0 - 0.05 0 - 0.002 b 0.23 0.30 0.38 0.009 0.012 0.015 0.23 0.30 0.38 0.009 0.012 0.015 C 0.15 0.20 0.25 0.006 0.008 0.010 0.15 0.20 0.25 0.006 0.008 0.010 D 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 D1 0.85 0.95 1.05 0.033 0.037 0.041 0.513 0.613 0.713 0.020 0.024 0.028 D2 0.135 0.235 0.335 0.005 0.009 0.013 E 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 E1 1.40 1.50 1.60 0.055 0.059 0.063 0.85 0.95 1.05 0.033 0.037 0.041 E2 0.345 0.395 0.445 0.014 0.016 0.018 E3 0.425 0.475 0.525 0.017 0.019 0.021 e 0.65 BSC 0.026 BSC 0.65 BSC 0.026 BSC K 0.275 TYP 0.011 TYP 0.275 TYP 0.011 TYP K1 0.400 TYP 0.016 TYP 0.320 TYP 0.013 TYP K2 0.240 TYP 0.009 TYP 0.252 TYP 0.010 TYP K3 0.225 TYP 0.009 TYP K4 L 0.355 TYP 0.175 0.275 0.014 TYP 0.375 T 0.007 0.011 0.015 0.175 0.275 0.375 0.007 0.011 0.015 0.05 0.10 0.15 0.002 0.004 0.006 ECN: C-07431 − Rev. C, 06-Aug-07 DWG: 5934 Document Number: 73001 06-Aug-07 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED PAD LAYOUT FOR PowerPAK® SC70-6L Dual 2.500 (0.098) 0.300 (0.012) 0.350 (0.014) 0.325 (0.013) 0.275 (0.011) 0.613 (0.024) 2.500 (0.098) 0.950 (0.037) 0.475 (0.019) 0.160 (0.006) 0.275 (0.011) 1 0.650 (0.026) 1.600 (0.063) APPLICATION NOTE Dimensions in mm (inches) Return to Index www.vishay.com 1 Document Number: 70487 Revision: 18-Oct-13 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000