Notebook Table of Contents Power Management, Charger Power............................................................................................................................... 3 Power Management, CPU Power..................................................................................................................................... 6 Power Management, System-,DDR-,Chipset-,VGA-Power.............................................................................................9 System Hardware, Load Switch..................................................................................................................................... 13 System Hardware, Opto Sensor..................................................................................................................................... 14 System Hardware, Protection.........................................................................................................................................15 page 1 Notebook VISHAY components used for Notebook functions include: • Power MOSFETS • Controller ICs • LDOs • IrDA and IR Receiver Modules • Load and Signal Switches • Switching Diodes and Rectifiers • Transient/Overvoltage Protection Devices • ESD Protection Devices • Capacitors • Resistors • NTC and PTC Thermistors • Inductors/EMI Filters • Secondary Protection Fuses Application Overview Notebook computer design is separated into two segment: Power and Hardware. The Power Segment involves hardware device power sources. For power sources, using a switching mode is an excellent way to improve converter efficiency. High current is its key feature. Power sources that use this technology include CPUs, DDR systems, chipsets, chargers, and VGA power sources. Low-dropout linear power is another solution for converter efficiency. Its main benefits are lower prices and simple circuitry. The Hardware Segment can be regarded as a non-power segment. Types of hardware include SD cards, USB ports, fingerprint recognition sysyems, remote controls, audio controls, touchscreens and touchpads, ambient light sensors, S-video ports, and wireless transmission sysytems such as IrDA® and Bluetooth®. Some of these need similar functions such as ESD protection, current limiting, and load switching. Different solutions based on different specifications are suggested. page 2 Notebook : Power Management, Charger Power Adaptor / Battery Switch Product Name Si4413ADY Status NEW Description Features Package P-Channel 30-V (D-S) MOSFET VDS = -30V; VGS = ± 20V Low rDS(on) ID=15A; rDS(on)=0.0075Ω Qgd= 61nC; VGSth= -1 V; SMD SO-8 Si4425BDY P-Channel 30-V (D-S) MOSFET VDS = -30V; VGS = ± 20V VGS = ± 20V ID=-11.4A; rDS(on)=0.012Ω Qgd= 64nC; VGSth= -1 V; SMD SO-8 Si4431BDY P-Channel 30-V (D-S) MOSFET VDS = -30V; VGS = ± 20V VGS = ± 20V ID=-7.5A; rDS(on)=0.030Ω Qgd= 13nC; VGSth= -1 V; SMD SO-8 Si4435BDY P-Channel 30-V (D-S) MOSFET VDS = -30V; VGS = ± 20V VGS = ± 20V ID=-9.1A; rDS(on)=0.020Ω Qgd= 33nC; VGSth= -1 V; SMD SO-8 Si4483EDY P-Channel 30-V (D-S) MOSFET With 3-kV ESD Protection VDS = -30V; VGS = ± 25V High VGS = ± 25V ID=-14A; rDS(on)=0.0085Ω VGSth = -1.0 V; SMD SO-8 Si4825DY P-Channel 30-V (D-S) MOSFET VDS = -30V; VGS = ± 25V High VGS = ± 25V ID=-11.5A; rDS(on)=0.014Ω Qg=15nC; VGSth= -1 V; SMD SO-8 Si4835BDY P-Channel 30-V (D-S) MOSFET VDS = -30V; VGS = ± 25V High VGS = ± 25V ID=-9.6A; rDS(on)=0.018Ω Qg=25nC; VGSth= -1 V; SMD SO-8 Si4890DY N-Ch. Reduced Qg, Fast Switching MOSFET VDS = 30V; VGS = ± 20V High VGS = ± 25V ID=-11A; rDS(on)=0.012Ω Qg=14.2nC; VGSth=0.8 V; SMD SO-8 Si7459DP P-Channel 30-V (D-S) MOSFET VDS = -30V; VGS = ± 25V Low Thermal Resistance PowerPAK® Low rDS(on), high VGS ID=-22A; rDS(on)=0.0068Ω Qg= 113nC; VGSth= -1V SMD PowerPAK SO-8 Si7945DP Dual P-Channel 30-V (D-S) MOSFET VGS= ± 20V; TrenchFET® Power MOSFET Low rDS(on); ID=-10.9A; rDS(on)=0.020Ω Qg= 49 nC; VGSth= -1 V SMD PowerPAK SO-8 Q-Level Dual Mofets Product Name Status Description Features Package Si4830 ADY Dual N-Ch. 30-V (D-S) MOSFET w. SCHOTTKY DUAL; With 2 A SCHOTTKY; VDS = 30V; VGS = ± 20V VGS = ± 20V ID=7.5A; rDS(on)=0.030Ω Qgd= 2.5nC; VGSth= 1.4 V; SMD SO-8 Si4834BDY Dual N-Ch. 30-V (D-S) MOSFET w. SCHOTTKY DUAL; With 2 A SCHOTTKY; VDS = 30V; VGS = ± 20V VGS = ± 20V ID=7.5A; rDS(on)=0.030Ω Qgd= 2.5nC; VGSth= 0.8 V; SMD SO-8 Si4914DY Dual N-Ch 30-V (D-S) MOSFET w. SCHOTTKY DUAL; With 2 A SCHOTTKY; VDS = 30V; VGS = ± 20V ID = 7 A / 7.4 A SMD rDS(on)=0.032Ω / 0.027Ω SO-8 Qgd=1.7 / 2.2nC; VGSth=1V Si4952DY Dual N-Channel 25-V (D-S) MOSFET DUAL VDS = 25V; VGS = ± 16V VGS = ± 20V ID=7.5A; rDS(on)=0.030Ω Qgd= 2.5nC; VGSth= 0.8 V; Q-Level SMD SO-8 High-Side MOSFETs Product Name Status Description Features Package Si4800BDY N-Ch. Reduced Qg, Fast Switching MOSFET VDS = 30V; VGS = ± 25V High-Efficient PWM Optimized High VGS = ± 25V ID=9A; rDS(on)=0.030Ω Qgd= 3.5nC; VGSth= 0.8 V; SMD SO-8 Si4812BDY N-Ch. 30-V (D-S) MOSFET w. SCHOTTKY With 1.4 A SCHOTTKY; VGS = ± 20V ID=9.5A; rDS(on)=0.021Ω SMD SO-8 Q-Level page 3 Product Name Status Si4835BDY Description Features Package VDS = 30V; VGS = ± 20V Qgd= 2.6nC; VGSth= 1 V; P-Channel 30-V (D-S) MOSFET VDS = -30V; VGS = ± 25V High VGS = ± 25V ID=-9.6A; rDS(on)=0.018Ω Qg=25nC; VGSth= -1 V; SMD SO-8 Si7230DN NEW N-Channel 30-V (D-S) MOSFET VDS = 30V; VGS = ± 20V PWM Optimized High power dissipation ID=14A; rDS(on)=0.016Ω Qgd= 4.3nC; VGSth= 1 V; SMD PowerPAK 1212 Si7326DN NEW N-Ch. 30-V (D-S) Fast Switching MOSFET VDS = 30V; VGS = ± 20V High power dissipation ID=10A; rDS(on)=0.030Ω Qgd= 3.5nC; VGSth= 0.8 V; SMD PowerPAK 1212 Status Description Features Q-Level Inductors Product Name Package IHLP2525CZ-01 Inductor; High Current; Low Profile; Small Outline Package; Fully Shielded; Miniature Power Profile height ≤ 3 mm 0.1 µH to 10 µH IDC up to 60 A SMD 2525 7.3x7.3x3.0mm IHLP4040DZ-01 Inductor; High Current; Low Profile; Small Outline Package; Fully Shielded; Profile height ≤ 4mm 0.19 µH to 10 µH IDC up to 90 A SMD 4040 11.5x11.5x4.0mm IHLP4040DZ-11 Inductor; High Current; Low Profile; Small Outline Package; Fully Shielded; Profile height ≤ 4mm 0.19 µH to 100 µH IDC up to 46 A SMD 4040 11.5x11.5x4.0mm IHLP5050CE-01 Inductor; High Current; Low Profile; Small Outline Package; Fully Shielded; Profile height ≤ 3.5mm 0.1 µH to 10 µH IDC up to 84 A SMD 5050 13.5x13.5x3.5mm Q-Level Low Side MOSFETs Product Name Status Description Features Package Si4800BDY N-Ch. Reduced Qg, Fast Switching MOSFET VDS = 30V; VGS = ± 25V High-Efficient PWM Optimized High VGS = ± 25V ID=9A; rDS(on)=0.030Ω Qgd= 3.5nC; VGSth= 0.8 V; SMD SO-8 Si4812BDY N-Ch. 30-V (D-S) MOSFET w. SCHOTTKY With 1.4 A SCHOTTKY; VDS = 30V; VGS = ± 20V VGS = ± 20V ID=9.5A; rDS(on)=0.021Ω Qgd= 2.6nC; VGSth= 1 V; SMD SO-8 Si7230DN NEW N-Channel 30-V (D-S) MOSFET VDS = 30V; VGS = ± 20V PWM Optimized High power dissipation ID=14A; rDS(on)=0.016Ω Qgd= 4.3nC; VGSth= 1 V; SMD PowerPAK 1212 Si7326DN NEW N-Ch. 30-V (D-S) Fast Switching MOSFET VDS = 30V; VGS = ± 20V High power dissipation ID=10A; rDS(on)=0.030Ω Qgd= 3.5nC; VGSth= 0.8 V; SMD PowerPAK 1212 Status Description Features Q-Level Resistors Product Name Package WSL2010-18 1 Watt Current sensing Resistor Power Metal Strip® Resistors; Low Resistance Value; High power & reliability R=0.001Ω to 0.5Ω TCR <= ± 75ppm SMD 2010 5.08x2.54x0.635 WSL2512-18 2 Watt Current sensing Resistor Power Metal Strip® Resistors; Low Resistance Value; High power & reliability R=0.0005Ω to 0.04Ω TCR <= ± 75ppm SMD 2512 6.36x3.18x0.635 1 Watt Power Metal Strip® Resistors; Very High Power- Small Size; Current Sensing; High power & reliability R=0.001Ω to 0.05Ω P70 = 1W SMD 1206 3.2x1.6x0.635mm WSLP1206 NEW Q-Level Schottky Diodes Product Name B140 Status Description Schottky Barrier Rectifier; Low Profile; Guardring for overload protection; High Surge Capabilities; Features VRRM = 40 V; IF = 1 A, VF = 0.52 V, Package Q-Level SMD DO-214AC (SMA) 5.28x2.8x2.3mm page 4 Product Name Status Description Features Package B240 A High-Current Density Schottky Rectifier High Efficiency; Low Power Loss; Low Profile VRRM = 40 V; IF = 2 A, VF = 0.5 V, SMD DO-214AC (SMA) 5.28x2.8x2.3mm B340 A High-Current Density Schottky Rectifier High Efficiency; Low Power Loss; RoHS-Compliant VRRM = 40 V; IF = 3A, VF = 0.5 V, SMD DO-214AC (SMA) 5.28x2.8x2.3mm MSS1P4 Schottky Barrier Rectifiers SMD; #SMP# Series; VRRM = 40 V; IF = 1 A; VF = 0.41 V; SMD MicroSMP 2.7x1.4x0.75mm SS10P4 NEW Schottky Barrier Rectifiers; SMD; High Current Density; #SMP# Series; High power /small package VRRM = 40 V; IF = 10 A;VF = 0.384 V SMD TO-277A (SMPC) 6.65x4.75x1.2mm SS1P4 NEW Schottky Barrier Rectifiers; SMD; High Current Density; #SMP# Series; Small package VRRM = 40 V; IF = 2 A, VF = 0.4 V, SMD DO-220AA (SMP) 4x2.18x1.15mm SS2P4 NEW Schottky Barrier Rectifiers; SMD; High Current Density; #SMP# Series; Small package VRRM = 40 V; IF = 2 A, VF = 0.43 V, SMD DO-220AA (SMP) 4x2.18x1.15mm SS3P4 NEW Schottky Barrier Rectifiers; SMD; High Current Density;#SMP# Series; Small package VRRM = 40 V; IF = 3A, VF = 0.5 V, SMD DO-220AA (SMP) 4x2.18x1.15mm SS5P4 NEW Schottky Barrier Rectifiers; SMD; High Current Density;#SMP# Series; High power /small package VRRM = 40 V; IF = 5 A, VF = 0.403 V, SMD TO-277A (SMPC) 6.65x4.75x1.2mm SS8P4C NEW Schottky Barrier Rectifiers; SMD; High Current Density;#SMP# Series; Dual Common-Cathode; High power /small package VRRM = 40 V; IF = 8 A, VF = 0.42 V, SMD TO-277A (SMPC) 6.65x4.75x1.2mm SSC54 NEW Schottky Barrier Rectifiers; SMD; High Current Density; Small Outline VRRM = 40 V; IF = 5 A, VF = 0.36V, SMD DO-220AA (SMC) 8.13x6.22x2.62mm Q-Level Signal Mosfet Product Name Status 2N7002K Description N-Ch 60-V (D-S)MOSFET; 2KV ESD protected Low On-Resistance; Low Threshold; Low Input Capacitance; Fast Switch Features VDS = 60 V; VGS = 20 V; rDS(on) = 4 Ohms, ID = 0.3A, VGSth = 1 V Package Q-Level SMD TO-236 (SOT-23) Switch Diodes Product Name Status Description Features Package 1N4148WS-V Small Signal Fast Switching Diode; Silicon epitaxial planar diode; RoHS-Compliant; VRRM = 75 V; IF = 0.15A; VF = 1.2 V; SMD SOD323 2.85x1.5x1.15mm BAT54 A-V Small Signal Schottky Diodes; Single & Dual Schematics; Very Low Turn-On and Fast Switching Dual, VRRM = 30 V; IF = 0.2 A, VF = 0.8 V, SMD TO-236 (SOT-23) 3.0x2.5x1.1mm Q-Level Thin Pack page 5 Notebook : Power Management, CPU Power High-Side MOSFETs Product Name Status Description Features Package Si4386DY N-Ch. Reduced Qg, Fast Switching MOSFET VDS = 30V; VGS = ± 20V Low Qgd; low rDS(on) ID=16A; rDS(on)=0.0095Ω Qgd = 3.0 nC; Si4392DY N-Ch. Reduced Qg, Fast Switching MOSFET VDS = 30V; VGS = ± 20V Low Qgd SMD ID=12.5A;rDS(on)=0.01375Ω SO-8 Qgd = 2.6 nC; Si4682DY NEW N-Channel 30-V (D-S) MOSFET VDS = 30V; VGS = ± 20V Low Qgd ID=12A; rDS(on)=0.0135Ω Qgd = 3.1 nC; SMD SO-8 Si4684DY NEW N-Channel 30-V (D-S) MOSFET VDS = 30V; VGS = ± 12V Low Qgd ID=12A; rDS(on)=0.0135Ω Qgd = 2.8 nC; SMD SO-8 Si4686DY NEW N-Channel 30-V (D-S) MOSFET VDS = 30V; VGS = ± 20V Extremely Low Qgd WFET® Technology Low Qgd ID=13.8A; rDS(on)=0.014Ω Qgd = 2.8 nC; SMD SO-8 Si7386DP N-Ch. Reduced Qg, Fast Switching MOSFET VDS = 30V; VGS = ± 20V Low Qgd, low rDS(on) ID=19A; rDS(on)=0.0095Ω Qgd = 3.0 nC SMD PowerPAK SO-8 Si7392DP N-Ch. Reduced Qg, Fast Switching WFET® Low Qgd VDS = 30V; VGS = ± 20V ID=15A; rDS(on)=0.01375Ω Qgd = 2.6 nC SMD PowerPAK SO-8 Si7682DP NEW N-Channel 30-V (D-S) MOSFET VDS = 30V; VGS = ± 20V 100% Rg Tested Low Qgd ID=17.5A; rDS(on)=0.013Ω Qgd = 3.1 nC; SMD PowerPAK SO-8 Si7686DP NEW N-Channel 30-V (D-S) MOSFET VDS = 30V; VGS = ± 20V Low Thermal Resistance PowerPAK® Low Qgd ID=17.9A; rDS(on)= 0.014Ω Qgd = 2.8 nC; SMD PowerPAK SO-8 N-Ch 30-V (D-S), 175°C, MOSFET; PWM Optimized; VDS = 30 V, VGS = ±20 V ID=63A; rDS(on)=0.013Ω Qgd = 5 nC SMD TO-252 DPAK SUD50N03-10P Q-Level SMD SO-8 Inductors Product Name Status Description Features Package IHLP4040DZ-01 Inductor; High Current; Low Profile; Small Outline Package; Fully Shielded; Profile height ≤ 4mm 0.19 µH to 10 µH IDC up to 90 A SMD 4040 11.5x11.5x4.0mm IHLP4040DZ-11 Inductor; High Current; Low Profile; Small Outline Package; Fully Shielded; Profile height ≤ 4mm 0.19 µH to 100 µH IDC up to 46 A SMD 4040 11.5x11.5x4.0mm IHLP5050CE-01 Inductor; High Current; Low Profile; Small Outline Package; Fully Shielded; Profile height ≤ 3.5mm 0.1 µH to 10 µH IDC up to 84 A SMD 5050 13.5x13.5x3.5mm Q-Level Low-Side MOSFETs Product Name Status Description Features Package Si4336DY N-Channel 30-V (D-S) MOSFET VDS = 30V; VGS = ± 20V Low rDS(on) SMD ID=16.3A; rDS(on)=0.0067Ω SO-8 VGSth = 1.0 V; Si4430BDY N-Channel 30-V MOSFET VDS = 30V; VGS = ± 20V Low rDS(on) ID=20A; rDS(on)=0.006Ω VGSth = 1.0 V; Q-Level SMD SO-8 Si4634DY NEW N-Channel 30-V (D-S) MOSFET VDS = 30V; VGS = ± 20V low rDS(on), high Vast SMD ID=16.3A; rDS(on)=0.0067Ω SO-8 VGSth = 1.4 V; Si4874BDY NEW N-Channel 30-V MOSFET VDS = 30V; VGS = ± 20V Low rDS(on) ID=16A; rDS(on)=0.0085Ω VGSth = 1 V SMD SO-8 page 6 Product Name Status Description Features Package Si7336 ADP NEW N-Channel 30-V (D-S) MOSFET VDS = 30V; VGS = ± 20V Ultra Low (ON) Resistance; Low rDS(on) ID=30A; rDS(on)=0.0040Ω VGSth = 1 V SMD PowerPAK SO-8 Si7634BDP NEW N-Channel 30-V (D-S) MOSFET VDS = 30V; VGS = ± 20V Low rDS(on), high Vast ID=23A; rDS(on)=0.0076Ω VGSth = 1.5 V SMD PowerPAK SO-8 Si7636DP N-Channel 30-V (D-S) MOSFET VDS = 30V; VGS = ± 20V Ultra Low (ON) Resistance Low rDS(on) ID=28A; rDS(on)=0.0048Ω VGSth = 1 V SMD PowerPAK SO-8 SUD50N03-06 AP N-Channel 30-V (D-S) MOSFET Optimized for Low#Side Synch. Rectif. VDS = 30 V, VGS = ±20 V Low rDS(on) ID=30A; rDS(on)=0.0078Ω VGSth = 1.2 V SMD TO-252 DPAK Q-Level Resistors Product Name Status Description Features Package WSL2010-18 1 Watt Current sensing Resistor Power Metal Strip® Resistors; Low Resistance Value; High power & reliability R=0.001Ω to 0.5Ω TCR <= ± 75ppm SMD 2010 5.08x2.54x0.635 WSL2512-18 2 Watt Current sensing Resistor Power Metal Strip® Resistors; Low Resistance Value; High power & reliability R=0.0005Ω to 0.04Ω TCR <= ± 75ppm SMD 2512 6.36x3.18x0.635 1 Watt Power Metal Strip® Resistors; Very High Power- Small Size; Current Sensing; High power & reliability R=0.001Ω to 0.05Ω P70 = 1W SMD 1206 3.2x1.6x0.635mm WSLP1206 NEW Q-Level Schottky Diodes Product Name Status Description Features Package B140 Schottky Barrier Rectifier; Low Profile; Guardring for overload protection; High Surge Capabilities; VRRM = 40 V; IF = 1 A, VF = 0.52 V, SMD DO-214AC (SMA) 5.28x2.8x2.3mm B240 A High-Current Density Schottky Rectifier High Efficiency; Low Power Loss; Low Profile VRRM = 40 V; IF = 2 A, VF = 0.5 V, SMD DO-214AC (SMA) 5.28x2.8x2.3mm B340 A High-Current Density Schottky Rectifier High Efficiency; Low Power Loss; RoHS-Compliant VRRM = 40 V; IF = 3A, VF = 0.5 V, SMD DO-214AC (SMA) 5.28x2.8x2.3mm MSS1P4 Schottky Barrier Rectifiers SMD; #SMP# Series; VRRM = 40 V; IF = 1 A; VF = 0.41 V; SMD MicroSMP 2.7x1.4x0.75mm SS1P4 NEW Schottky Barrier Rectifiers; SMD; High Current Density; #SMP# Series; Small package VRRM = 40 V; IF = 2 A, VF = 0.4 V, SMD DO-220AA (SMP) 4x2.18x1.15mm SS2P4 NEW Schottky Barrier Rectifiers; SMD; High Current Density; #SMP# Series; Small package VRRM = 40 V; IF = 2 A, VF = 0.43 V, SMD DO-220AA (SMP) 4x2.18x1.15mm SS3P4 NEW Schottky Barrier Rectifiers; SMD; High Current Density;#SMP# Series; Small package VRRM = 40 V; IF = 3A, VF = 0.5 V, SMD DO-220AA (SMP) 4x2.18x1.15mm Q-Level Signal Switch Product Name Status 2N7002K Description N-Ch 60-V (D-S)MOSFET; 2KV ESD protected Low On-Resistance; Low Threshold; Low Input Capacitance; Fast Switch Features VDS = 60 V; VGS = 20 V; rDS(on) = 4 Ohms, ID = 0.3A, VGSth = 1 V Package Q-Level SMD TO-236 (SOT-23) Switch Diodes Product Name 1N4148WS-V Status Description Small Signal Fast Switching Diode; Silicon epitaxial planar diode; Features VRRM = 75 V; IF = 0.15A; VF = 1.2 V; Package Q-Level SMD SOD323 page 7 Product Name Status Description Features RoHS-Compliant; BAT54 A-V Small Signal Schottky Diodes; Single & Dual Schematics; Very Low Turn-On and Fast Switching Package Q-Level 2.85x1.5x1.15mm Dual, VRRM = 30 V; IF = 0.2 A, VF = 0.8 V, SMD TO-236 (SOT-23) 3.0x2.5x1.1mm Thin Pack Thermistor NTC Product Name Status Description Features Package 2381 615 1xxx NTC Thermistors; Surface Mount; TCR from 6 to 2% even at higher temp. RoHS-Compliant; 2 kΩ-470 kΩ;B25/85Tol.=1% RTol.@25°C <= 5 %; Ptot = 0.21 W SMD 0805 EIA-Sizes 2381 615 3xxx NTC Thermistors; Surface Mount; Tolerance on B25/85 down to 1 % 2.2 kΩ to 100 kΩ; 0.125 W RTol.@25°C = 5% to 1 %; SMD 0603 EIA-Sizes 2381 615 4xxx NTC Thermistors; Surface Mount; Tolerance on B25/85 down to 1 % 4.7 kΩ to 100 kΩ; 0.125 W RTol.@25°C = 5% to 1 %; SMD 0402 EIA-Sizes 2381 615 5xxx NTC Thermistors; Surface Mount; Tolerance on B25/85 down to 1 % 2.2 kΩ to 680 kΩ, 0.21 W RTol.@25°C = 10% to 2 %; SMD 0805 EIA-Sizes NTHS NTC Thermistors; Monolithic Construction R25 = 1 kΩ to 330 kΩ Tol.@25°C = 10 % to 1% B(25/75) = 3181 to 4247 SMD 0402 to 1206 EIA-Sizes Q-Level page 8 Notebook : Power Management, System-,DDR-,Chipset-,VGA-Power Dual MOSFETs Product Name Status Description Features Package Si4830 ADY Dual N-Ch. 30-V (D-S) MOSFET w. SCHOTTKY DUAL; With 2 A SCHOTTKY; VDS = 30V; VGS = ± 20V VGS = ± 20V ID=7.5A; rDS(on)=0.030Ω Qgd= 2.5nC; VGSth= 1.4 V; SMD SO-8 Si4834BDY Dual N-Ch. 30-V (D-S) MOSFET w. SCHOTTKY DUAL; With 2 A SCHOTTKY; VDS = 30V; VGS = ± 20V VGS = ± 20V ID=7.5A; rDS(on)=0.030Ω Qgd= 2.5nC; VGSth= 0.8 V; SMD SO-8 Si4914DY Dual N-Ch 30-V (D-S) MOSFET w. SCHOTTKY DUAL; With 2 A SCHOTTKY; ID = 7 A / 7.4 A SMD rDS(on)=0.032Ω / 0.027Ω SO-8 Qgd=1.7 / 2.2nC; VGSth=1V Si4952DY Dual N-Channel 25-V (D-S) MOSFET DUAL VDS = 25V; VGS = ± 16V VGS = ± 20V ID=7.5A; rDS(on)=0.030Ω Qgd= 2.5nC; VGSth= 0.8 V; SMD SO-8 Si7844DP Dual N-Channel 30-V (D-S) MOSFET; VGS= ± 20V; TrenchFET® Power MOSFET High power dissipation; ID=10 A; rDS(on)= 0.030 Ω Qgd= 2.7nC; VGSth= 0.8 V; SMD PowerPAK SO-8 Q-Level High-Side MOSFETs Product Name Status Description Features Package Si4386DY N-Ch. Reduced Qg, Fast Switching MOSFET VDS = 30V; VGS = ± 20V Low Qgd, low rDS(on) ID=16A; rDS(on)=0.0095Ω Qgd = 3.0 nC; Si4392DY N-Ch. Reduced Qg, Fast Switching MOSFET VDS = 30V; VGS = ± 20V Low Qgd SMD ID=12.5A;rDS(on)=0.01375Ω SO-8 Qgd = 2.6 nC; SMD SO-8 Si4682DY NEW N-Channel 30-V (D-S) MOSFET VDS = 30V; VGS = ± 20V Low Qgd ID=12A; rDS(on)=0.0135Ω Qgd = 3.1 nC; SMD SO-8 Si4684DY NEW N-Channel 30-V (D-S) MOSFET VDS = 30V; VGS = ± 12V Low Qgd ID=12A; rDS(on)=0.0135Ω Qgd = 2.8 nC; SMD SO-8 Si4686DY NEW N-Channel 30-V (D-S) MOSFET VDS = 30V; VGS = ± 20V Extremely Low Qgd WFET® Technology Low Qgd ID=13.8A; rDS(on)=0.014Ω Qgd = 2.8 nC; SMD SO-8 Si4800BDY N-Ch. Reduced Qg, Fast Switching MOSFET VDS = 30V; VGS = ± 25V High-Efficient PWM Optimized High VGS = ± 25V ID=9A; rDS(on)=0.030Ω Qgd= 3.5nC; VGSth= 0.8 V; SMD SO-8 Si4812BDY N-Ch. 30-V (D-S) MOSFET w. SCHOTTKY With 1.4 A SCHOTTKY; VDS = 30V; VGS = ± 20V VGS = ± 20V ID=9.5A; rDS(on)=0.021Ω Qgd= 2.6nC; VGSth= 1 V; SMD SO-8 Si4894BDY N-Channel 30-V (D-S) MOSFET VDS = 30V; VGS = ± 20V Low Qgd ID=12A; rDS(on)=0.016Ω VGSth = 1 V SMD SO-8 Si7112DN NEW N-Ch. 30-V (D-S) Fast Switching MOSFET VDS = 30V; VGS = ± 12V Small package; low Qgd, low rDS(on) SMD ID=17.8A; rDS(on)=0.0082Ω PowerPAK 1212 Qgd= 3.1nC; VGSth= 0.6 V; Si7230DN NEW N-Channel 30-V (D-S) MOSFET VDS = 30V; VGS = ± 20V PWM Optimized Small package ID=14A; rDS(on)=0.016Ω Qgd= 4.3nC; VGSth= 1 V; SMD PowerPAK 1212 N-Ch. 30-V (D-S) Fast Switching MOSFET VDS = 30V; VGS = ± 20V Small package ID=10A; rDS(on)=0.030Ω Qgd= 3.5nC; VGSth= 0.8 V; SMD PowerPAK 1212 N-Ch. Reduced Qg, Fast Switching MOSFET VDS = 30V; VGS = ± 20V Low Qgd, low rDS(on) ID=19A; rDS(on)=0.0095Ω Qgd = 3.0 nC SMD PowerPAK SO-8 Si7326DN Si7386DP NEW Q-Level page 9 Product Name Status Si7392DP Description Features Package N-Ch. Reduced Qg, Fast Switching WFET® Low Qgd VDS = 30V; VGS = ± 20V ID=15A; rDS(on)=0.01375Ω Qgd = 2.6 nC SMD PowerPAK SO-8 Si7682DP NEW N-Channel 30-V (D-S) MOSFET VDS = 30V; VGS = ± 20V 100% Rg Tested Low Qgd ID=17.5A; rDS(on)=0.013Ω Qgd = 3.1 nC; SMD PowerPAK SO-8 Si7686DP NEW N-Channel 30-V (D-S) MOSFET VDS = 30V; VGS = ± 20V Low Thermal Resistance PowerPAK® Low Qgd ID=17.9A; rDS(on)= 0.014Ω Qgd = 2.8 nC; SMD PowerPAK SO-8 Q-Level Inductors Product Name Status Description Features Package Inductor; High Current; Low Profile; Small Outline Package; Fully Shielded; Ultra Miniature Power Profile height ≤ 2 mm; 0.47 µH to 4.7 µH; IDC up to 12.8 A; SMD 1616 4.8x4.8x2.0mm IHLP2525CZ-01 Inductor; High Current; Low Profile; Small Outline Package; Fully Shielded; Miniature Power Profile height ≤ 3 mm 0.1 µH to 10 µH IDC up to 60 A SMD 2525 7.3x7.3x3.0mm IHLP4040DZ-01 Inductor; High Current; Low Profile; Small Outline Package; Fully Shielded; Profile height ≤ 4mm 0.19 µH to 10 µH IDC up to 90 A SMD 4040 11.5x11.5x4.0mm IHLP4040DZ-11 Inductor; High Current; Low Profile; Small Outline Package; Fully Shielded; Profile height ≤ 4mm 0.19 µH to 100 µH IDC up to 46 A SMD 4040 11.5x11.5x4.0mm IHLP5050CE-01 Inductor; High Current; Low Profile; Small Outline Package; Fully Shielded; Profile height ≤ 3.5mm 0.1 µH to 10 µH IDC up to 84 A SMD 5050 13.5x13.5x3.5mm IHLP1616BZ-01 NEW Q-Level Low-Side MOSFETs Product Name Status Description Features Package Si4336DY N-Channel 30-V (D-S) MOSFET VDS = 30V; VGS = ± 20V Low rDS(on) SMD ID=16.3A; rDS(on)=0.0067Ω SO-8 VGSth = 1.0 V; Si4386DY N-Ch. Reduced Qg, Fast Switching MOSFET VDS = 30V; VGS = ± 20V Low Qgd, low rDS(on) ID=16A; rDS(on)=0.0095Ω Qgd = 3.0 nC; SMD SO-8 Si4430BDY N-Channel 30-V MOSFET VDS = 30V; VGS = ± 20V Low rDS(on) ID=20A; rDS(on)=0.006Ω VGSth = 1.0 V; SMD SO-8 N-Channel 30-V (D-S) MOSFET VDS = 30V; VGS = ± 20V Low rDS(on), high Vast SMD ID=16.3A; rDS(on)=0.0067Ω SO-8 VGSth = 1.4 V; Si4682DY N-Channel 30-V (D-S) MOSFET VDS = 30V; VGS = ± 20V VGS = ± 20V ID=12A; rDS(on)=0.0135Ω Qgd = 3.1 nC; SMD SO-8 Si4686DY N-Channel 30-V (D-S) MOSFET VDS = 30V; VGS = ± 20V Extremely Low Qgd WFET® Technology VGS = ± 20V ID=13.8A; rDS(on)=0.014Ω Qgd = 2.8 nC; SMD SO-8 Si4800BDY N-Ch. Reduced Qg, Fast Switching MOSFET VDS = 30V; VGS = ± 25V High-Efficient PWM Optimized High VGS = ± 25V ID=9A; rDS(on)=0.030Ω Qgd= 3.5nC; VGSth= 0.8 V; SMD SO-8 Si4812BDY N-Ch. 30-V (D-S) MOSFET w. SCHOTTKY With 1.4 A SCHOTTKY; VDS = 30V; VGS = ± 20V VGS = ± 20V ID=9.5A; rDS(on)=0.021Ω Qgd= 2.6nC; VGSth= 1 V; SMD SO-8 SMD SO-8 Si4634DY NEW Si4874BDY NEW N-Channel 30-V MOSFET VDS = 30V; VGS = ± 20V Low rDS(on) ID=16A; rDS(on)=0.0085Ω VGSth = 1 V Si7112DN NEW N-Ch. 30-V (D-S) Fast Switching MOSFET VDS = 30V; VGS = ± 12V Small package; low Qgd, low rDS(on) SMD ID=17.8A; rDS(on)=0.0082Ω PowerPAK 1212 Qgd= 3.1nC; VGSth= 0.6 V; Q-Level page 10 Product Name Status Description Features Package Si7114DN NEW N-Ch. 30-V (D-S) Fast Switching MOSFET VDS = 30V; VGS = ± 20V TrenchFET® Gen II Power MOSFET Small package ID=18.3A; rDS(on)=0.010Ω Qgd= 3.6nC; VGSth= 1 V; SMD PowerPAK 1212 Si7230DN NEW N-Channel 30-V (D-S) MOSFET VDS = 30V; VGS = ± 20V PWM Optimized Small package ID=14A; rDS(on)=0.016Ω Qgd= 4.3nC; VGSth= 1 V; SMD PowerPAK 1212 Si7326DN NEW N-Ch. 30-V (D-S) Fast Switching MOSFET VDS = 30V; VGS = ± 20V Small package ID=10A; rDS(on)=0.030Ω Qgd= 3.5nC; VGSth= 0.8 V; SMD PowerPAK 1212 Si7336 ADP NEW N-Channel 30-V (D-S) MOSFET VDS = 30V; VGS = ± 20V Ultra Low (ON) Resistance; Low rDS(on) ID=30A; rDS(on)=0.0040Ω VGSth = 1 V SMD PowerPAK SO-8 Si7634BDP NEW N-Channel 30-V (D-S) MOSFET VDS = 30V; VGS = ± 20V Low rDS(on), high Vast ID=23A; rDS(on)=0.0076Ω VGSth = 1.5 V SMD PowerPAK SO-8 Si7636DP NEW N-Channel 30-V (D-S) MOSFET VDS = 30V; VGS = ± 20V Ultra Low (ON) Resistance Low rDS(on) ID=28A; rDS(on)=0.0048Ω VGSth = 1 V SMD PowerPAK SO-8 Q-Level Resistors Product Name Status Description Features Package WSL2010-18 1 Watt Current sensing Resistor Power Metal Strip® Resistors; Low Resistance Value; High power & reliability R=0.001Ω to 0.5Ω TCR <= ± 75ppm SMD 2010 5.08x2.54x0.635 WSL2512-18 2 Watt Current sensing Resistor Power Metal Strip® Resistors; Low Resistance Value; High power & reliability R=0.0005Ω to 0.04Ω TCR <= ± 75ppm SMD 2512 6.36x3.18x0.635 1 Watt Power Metal Strip® Resistors; Very High Power- Small Size; Current Sensing; High power & reliability R=0.001Ω to 0.05Ω P70 = 1W SMD 1206 3.2x1.6x0.635mm WSLP1206 NEW Q-Level Schottky Diodes Product Name Status Description Features Package B140 Schottky Barrier Rectifier; Low Profile; Guardring for overload protection; High Surge Capabilities; VRRM = 40 V; IF = 1 A, VF = 0.52 V, SMD DO-214AC (SMA) 5.28x2.8x2.3mm B240 A High-Current Density Schottky Rectifier High Efficiency; Low Power Loss; Low Profile VRRM = 40 V; IF = 2 A, VF = 0.5 V, SMD DO-214AC (SMA) 5.28x2.8x2.3mm B340 A High-Current Density Schottky Rectifier High Efficiency; Low Power Loss; RoHS-Compliant VRRM = 40 V; IF = 3A, VF = 0.5 V, SMD DO-214AC (SMA) 5.28x2.8x2.3mm MSS1P4 Schottky Barrier Rectifiers SMD; #SMP# Series; VRRM = 40 V; IF = 1 A; VF = 0.41 V; SMD MicroSMP 2.7x1.4x0.75mm SS1P4 NEW Schottky Barrier Rectifiers; SMD; High Current Density; #SMP# Series; Small package VRRM = 40 V; IF = 2 A, VF = 0.4 V, SMD DO-220AA (SMP) 4x2.18x1.15mm SS2P4 NEW Schottky Barrier Rectifiers; SMD; High Current Density; #SMP# Series; Small package VRRM = 40 V; IF = 2 A, VF = 0.43 V, SMD DO-220AA (SMP) 4x2.18x1.15mm SS3P4 NEW Schottky Barrier Rectifiers; SMD; High Current Density;#SMP# Series; Small package VRRM = 40 V; IF = 3A, VF = 0.5 V, SMD DO-220AA (SMP) 4x2.18x1.15mm Q-Level Small-Signal MOSFET Product Name 2N7002K Status Description N-Ch 60-V (D-S)MOSFET; 2KV ESD protected Low On-Resistance; Low Threshold; Features VDS = 60 V; VGS = 20 V; rDS(on) = 4 Ohms, ID = 0.3A, VGSth = 1 V Package Q-Level SMD TO-236 (SOT-23) page 11 Product Name Status Description Features Package Q-Level Features Package Q-Level Low Input Capacitance; Fast Switch Switch Diodes Product Name Status Description 1N4148WS-V Small Signal Fast Switching Diode; Silicon epitaxial planar diode; RoHS-Compliant; VRRM = 75 V; IF = 0.15A; VF = 1.2 V; SMD SOD323 2.85x1.5x1.15mm BAT54 A-V Small Signal Schottky Diodes; Single & Dual Schematics; Very Low Turn-On and Fast Switching Dual, VRRM = 30 V; IF = 0.2 A, VF = 0.8 V, SMD TO-236 (SOT-23) 3.0x2.5x1.1mm Thin Pack page 12 Notebook : System Hardware, Load Switch Level Shift Product Name Si1865DL Status NEW Si3865BDV Description Features Package Load Switch with Level-Shift; With 2-kV ESD Protection Low Profile; Small Foodprint VDS = 8 V; ID=1.2A; rDS(on)=0.215Ω; Von/off = 8 V; SMD SC-70 Load Switch with Level-Shift; With 3-kV ESD Protection;1.8 Volt Rated; VDS = 8V Lower turn-on at 1.8 V ID=2.9A; rDS(on)=0.060Ω; Von/off = 8 V, SMD TSOP-6 Q-Level MOSFETs Product Name Status Description Features Package 2N7002K N-Ch 60-V (D-S)MOSFET; 2KV ESD protected Low On-Resistance; Low Threshold; Low Input Capacitance; Fast Switch VDS = 60 V; VGS = 20 V; rDS(on) = 4 Ohms, ID = 0.3A, VGSth = 1 V Si3424DV N-Channel 30-V (D-S) MOSFET TrenchFET® Power MOSFETS VGS = ± 20V SMD ID=6.7A; rDS(on)=0.038Ω; TSOP-6 Qgd= 11.5nC; VGSth= 0.8V; Si3433BDC P-Channel 1.8-V (G-S) MOSFET TrenchFET® Power MOSFETS VGS = ± 8V SMD ID=5.6A; rDS(on)=0.042Ω; TSOP-6 Qgd= 12nC; VGSth= 0.45 V; Si3442BDV N-Channel 2.5-V (G-S) MOSFET VDS = 20V; VGS = ± 12V VGS = ± 12V ID=4.2A; rDS(on)=0.090Ω; Qgd= 3.0nC; VGSth= 0.6 V; SMD TSOP-6 Si3456BDV N-Channel 30-V (D-S) MOSFET VDS = 30V; VGS = ± 20V VGS = ± 20V ID=6A; rDS(on)=0.052Ω; Qgd= 8.6nC; VGSth= 1 V; SMD TSOP-6 Si4800BDY N-Ch. Reduced Qg, Fast Switching MOSFET VDS = 30V; VGS = ± 25V High-Efficient PWM Optimized High VGS = ± 25V ID=9A; rDS(on)=0.030Ω Qgd= 3.5nC; VGSth= 0.8 V; SMD SO-8 N-Ch. 30-V (D-S) Fast Switching MOSFET VDS = 30V; VGS = ± 20V VGS = ± 20V ID=10A; rDS(on)=0.030Ω Qgd= 3.5nC; VGSth= 0.8 V; SMD PowerPAK 1212 P-Channel 60-V (D-S) MOSFET With 2-kV ESD Protection; VDS = 60 V, VGS = 20 V, ID=0.185A; rDS(on)=10Ω VGSth = 1 V SMD SOT-23 Si7326DN TP0610K NEW Q-Level SMD TO-236 (SOT-23) page 13 Notebook : System Hardware, Opto Sensor Ambient Light Sensor Product Name Status Description Features Package TEMT6000X01 NEW NPN Phototransistor; Ambient Light Sensor; SMD 4.0x2.0x1.05mm TEMT6200FX01 NEW NPN Phototransistor; Ambient Light Sensor; SMD 0805 EIA-Sizes Q-Level page 14 Notebook : System Hardware, Protection Diodes Product Name Status Description Features Package 1N4148WS-V Small Signal Fast Switching Diode; Silicon epitaxial planar diode; RoHS-Compliant; VRRM = 75 V; IF = 0.15A; VF = 1.2 V; SMD SOD323 2.85x1.5x1.15mm BAT54 A-V Small Signal Schottky Diodes; Single & Dual Schematics; Very Low Turn-On and Fast Switching Dual, VRRM = 30 V; IF = 0.2 A, VF = 0.8 V, SMD TO-236 (SOT-23) 3.0x2.5x1.1mm BAV99-V Small Signal Switching Diode, Dual Dual; VRRM = 70 V, IF = 0.2A; VF = 0.715 V SMD SOT-23 Q-Level Thin Pack EMI Product Name Status ILHB series Description Ferrite beads@100MHz; High Current; EIA-Size = 0603/0805/1206/1812 Features High current current 2 A to 3 A DCR = 0.1~0.05 ohms, Package Q-Level SMD 0402 to 1206 EIA-Sizes Fuse Product Name Status Description Features Package MFU0603 NEW Fuses, Thin Film; Fast Acting; 0603; Stable Fusing Characteristics; IR = 0.5 A to 5.0 A; UDCmax = 32 V SMD 0603 EIA-Sizes MFU0805 NEW Fuses, Thin Film; Fast Acting; 0805; Stable Fusing Characteristics; IR = 0.5 A to 5.0 A; UDCmax = 32 V SMD 0805 EIA-Sizes Q-Level Thermister NTC Product Name Status Description Features Package 2381 615 1xxx NTC Thermistors; Surface Mount; TCR from 6 to 2% even at higher temp. RoHS-Compliant; 2 kΩ-470 kΩ;B25/85Tol.=1% Rtol.@25°C <= 5 %; Ptot = 0.21 W SMD 0805 EIA-Sizes 2381 615 3xxx NTC Thermistors; Surface Mount; Tolerance on B25/85 down to 1 % 2.2 kΩ to 100 kΩ; 0.125 W RTol.@25°C = 5% to 1 %; SMD 0603 EIA-Sizes 2381 615 4xxx NTC Thermistors; Surface Mount; Tolerance on B25/85 down to 1 % 4.7 kΩ to 100 kΩ; 0.125 W RTol.@25°C = 5% to 1 %; SMD 0402 EIA-Sizes 2381 615 5xxx NTC Thermistors; Surface Mount; Tolerance on B25/85 down to 1 % 2.2 kΩ to 680 kΩ, 0.21 W RTol.@25°C = 10% to 2 %; SMD 0805 EIA-Sizes NTHS NTC Thermistors; Monolithic Construction R25 = 1 kΩ to 330 kΩ Tol.@25°C = 10 % to 1% B(25/75) = 3181 to 4247 SMD 0402 to 1206 EIA-Sizes Q-Level Thermister PTC Product Name Status TFPT Description PTC Thermistors; Linear; Thin Film; SMD; EIA 0603/0805/1206; Features TCR@25°C= 4110ppm TCR Tol.=±400ppm Package Q-Level SMD 0603 to 1206 EIA-Size TVS Product Name TPSMP series Status Description Transient Voltage Suppressor High Power Density; SMD; Automotive Qualified Features Small package 400 W, up to 30 A, VF = 2.5 V, Package SMD SMP 4x2.18x1.15mm Q-Level AEC Q-101 page 15 Zener Product Name BZX384 series Status Description Silicon Planar Power Zener Diodes; Miniature; Features 0.2 Watt Zvoltage Tol. ≤ 5% Package Q-Level SMD SOD323 2.85x1.5x1.15mm page 16 page 17