HMC571


Design Assistance

Customised Pack Sizes / Qtys

Assembly Assistance

Support for all industry recognised
supply formats:

Die handling consultancy

Hi-Rel die qualification

Hot & Cold die probing

Electrical test & trimming
o Waffle Pack
o Gel Pak
o Tape & Reel

Onsite storage, stockholding &
scheduling

100% Visual Inspection
o MIL-STD 883 Condition A
o MIL-STD 883 Condition A

On-site failure analysis

Bespoke 24 Hour monitored
storage systems for secure long
term product support

On-site failure analysis
Contact
[email protected]
For price, delivery and to place orders
HMC571
www.analog.com
www.micross.com
Analog Devices Welcomes
Hittite Microwave Corporation
NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED
www.analog.com
www.hittite.com
THIS PAGE INTENTIONALLY LEFT BLANK
HMC571
v03.0808
3
GaAs MMIC I/Q DOWNCONVERTER
21 - 25 GHz
Typical Applications
Features
The HMC571 is ideal for:
Conversion Gain: 11 dB
• Point-to-Point and Point-to-Multi-Point Radio
Image Rejection: 24 dB
• Military Radar, EW & ELINT
2 LO to RF Isolation: 40 dB
• Satellite Communications
Noise Figure: 3 dB
MIXERS - I/Q RECEIVERS - CHIP
Input IP3: +5 dBm
Die Size: 2.33 x 2.51 x 0.10 mm
Functional Diagram
General Description
The HMC571 is a compact GaAs MMIC I/Q
downconverter chip which provides a small signal
conversion gain of 10 dB with a noise figure of 3 dB
and 24 dB of image rejection across the frequency
band. The device utilizes an LNA followed by an image
reject mixer which is driven by an active x2 multiplier.
The image reject mixer eliminates the need for a filter
following the LNA, and removes thermal noise at the
image frequency. I and Q mixer outputs are provided
and an external 90° hybrid is needed to select the
required sideband. All data shown below is taken
with the chip mounted in a 50 Ohm test fixture and
includes the effects of 1 mil diameter x 20 mil length
bond wires on each port. This product is a much
smaller alternative to hybrid style image reject mixer
downconverter assemblies.
Electrical Specifi cations, TA = +25° C, IF = 100 MHz, LO = +4 dBm, Vdd = 3.5 Vdc*
Parameter
Min.
Typ.
Max.
Min.
Typ.
Max.
Frequency Range, RF
21.2 - 23.7
21 - 25
GHz
Frequency Range, LO
9 - 14
9 - 14
GHz
Frequency Range, IF
Conversion Gain (As IRM)
DC - 3.5
DC - 3.5
GHz
8
11
dB
3
dB
22
19
24
dB
9
11
19
Noise Figure
3
Image Rejection
1 dB Compression (Input)
-9
-6
-11
-8
dBm
2 LO to RF Isolation
38
45
38
45
dB
2 LO to IF Isolation
28
32
28
32
dB
IP3 (Input)
+2
+5
-2
+5
dBm
0.7
dB
Amplitude Balance
Phase Balance
0.3
5
Total Supply Current
125
5
165
125
Deg
165
*Data taken as IRM with external IF hybrid
3 - 138
Units
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
mA
HMC571
v03.0808
GaAs MMIC I/Q DOWNCONVERTER
21 - 25 GHz
Data Taken As IRM With External IF Hybrid
Conversion Gain vs. Temperature
Image Rejection vs. Temperature
30
IMAGE REJECTION (dB)
CONVERSION GAIN (dB)
15
10
5
+25C
+85C
-55C
0
-5
-10
3
25
20
+25C
+85C
-55C
15
10
5
20
21
22
23
24
25
26
20
21
RF FREQUENCY (GHz)
Conversion Gain vs. LO Drive
23
25
26
0
15
RETURN LOSS (dB)
-5
10
5
0
0dBm
+2dBm
+4dBm
+6dBm
+8dBm
-5
-10
-15
RF
LO
-20
-10
-25
20
21
22
23
24
25
8
26
10
12
RF FREQUENCY (GHz)
14
16
18
20
22
24
26
28
FREQUENCY (GHz)
Input IP3 vs. LO Drive
Input P1dB vs. Temperature
15
0
-2
LO = 0 dBm
LO = +2 dBm
LO = +4 dBm
LO = +6 dBm
LO = +8 dBm
10
-4
IP3 (dBm)
-6
P1dB (dBm)
24
Return Loss
20
CONVERSION GAIN (dB)
22
RF FREQUENCY (GHz)
MIXERS - I/Q RECEIVERS - CHIP
20
-8
-10
-12
-14
+25C
+85C
-55C
-16
5
0
-5
-18
-20
-10
20
21
22
23
24
RF FREQUENCY (GHz)
25
26
20
21
22
23
24
25
26
RF FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
3 - 139
HMC571
v03.0808
GaAs MMIC I/Q DOWNCONVERTER
21 - 25 GHz
Quadrature Channel Data Taken Without IF Hybrid
Isolations
IF Bandwidth*
10
20
RF/IF2
15
10
RESPONSE (dB)
-10
RF/IF1
-20
2LO/IF1
-30
2LO/IF2
-40
2LO/RF
5
CONVERSION GAIN
RETURN LOSS
0
-5
-10
-50
-15
-60
20
21
22
23
24
25
-20
0.5
26
1
1.5
RF FREQUENCY (GHz)
2.5
3
3.5
25
26
Phase Balance vs. LO Drive
2.5
20
1.5
PHASE BALANCE (degrees)
LO = 0 dBm
LO = +2 dBm
LO = +4 dBm
LO = +6 dBm
LO = +8 dBm
2
1
0.5
0
-0.5
-1
15
LO = 0 dBm
LO = +2 dBm
LO = +4 dBm
LO = +6 dBm
LO = +8 dBm
10
5
0
-5
20
21
22
23
24
25
26
20
21
22
RF FREQUENCY (GHz)
23
24
RF FREQUENCY (GHz)
Noise Figure vs. LO Drive,
LO Frequency = 10.3 GHz
Noise Figure vs. LO Drive,
IF Frequency = 100 MHz
6
8
5
0dBm
+2dBm
+4dBm
+6dBm
+8dBm
6
NOISE FIGURE (dB)
NOISE FIGURE (dB)
2
IF FREQUENCY (GHz)
Amplitude Balance vs. LO Drive
AMPLITUDE BALANCE (dB)
MIXERS - I/Q RECEIVERS - CHIP
3
ISOLATION (dB)
0
4
2
0dBm
+2dBm
+4dBm
+6dBm
+8dBm
4
3
2
1
0
0.5
0
1
1.5
2
2.5
IF FREQUENCY (GHz)
3
3.5
4
18
19
20
21
RF FREQUENCY (GHz)
* Conversion gain data taken with external IF hybrid, LO frequency fi xed at 10.3 GHz and RF varied
3 - 140
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
22
HMC571
v03.0808
GaAs MMIC I/Q DOWNCONVERTER
21 - 25 GHz
MxN Spurious Outputs
Absolute Maximum Ratings
RF
+2 dBm
0
1
2
3
4
LO Drive
+ 13 dBm
0
xx
28
19
26
34
Vdd
5.5V
1
33
30
0
29
44
Channel Temperature
175°C
2
67
79
62
67
44
xx
xx
xx
79
87
Continuous Pdiss (T=85°C)
(derate 10.2 mW/°C above 85°C)
920 mW
3
4
xx
xx
xx
xx
xx
Thermal Resistance (RTH)
(channel to package bottom)
98.3 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-55 to +85 °C
ESD Sensitivity (HBM)
Class 1B
RF = 22 GHz @ -20 dBm
LO = 10.5 GHz @ +4 dBm
Data taken without IF hybrid
All values in dBc below IF power level (1RF -2LO = 1 GHz)
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
3
MIXERS - I/Q RECEIVERS - CHIP
nLO
mRF
3 - 141
HMC571
v03.0808
GaAs MMIC I/Q DOWNCONVERTER
21 - 25 GHz
Outline Drawing
MIXERS - I/Q RECEIVERS - CHIP
3
Die Packaging Information
[1]
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
Standard
Alternate
GP-1 (Gel Pack)
[2]
2. DIE THICKNESS IS 0.004”
3. BOND PAD METALIZATION: GOLD
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
3 - 142
4. BACKSIDE METALIZATION: GOLD
5. BACKSIDE METAL IS GROUND
6. OVERALL DIE SIZE ±0.002
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC571
v03.0808
GaAs MMIC I/Q DOWNCONVERTER
21 - 25 GHz
Pad Descriptions
Function
Description
1
VddRF
Power supply for RF LNA.
External RF bypass capacitors are required.
2
VddLO2
Power supply for second stage of LO amplifier.
External RF bypass capacitors are required.
3
VddLO
Power supply for first stage of LO amplifier.
External RF bypass capacitors are required.
4
LO
This pad is AC coupled
and matched to 50 Ohms.
5
IF1
6
IF2
7
RF
This pad is AC coupled
and matched to 50 Ohms.
GND
The backside of the die must be
connected to RF/DC ground.
Interface Schematic
This pad is DC coupled for applications not requiring operation to DC. This port should be DC blocked
externally using a series capacitor whose value has
been chosen to pass the necessary frequency range.
For operation to DC, this pad must not source /sink more
than 3 mA of current or die non - function and possible
die failure will result.
Typical Application
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
3
MIXERS - I/Q RECEIVERS - CHIP
Pad Number
3 - 143
HMC571
v03.0808
GaAs MMIC I/Q DOWNCONVERTER
21 - 25 GHz
Assembly Drawing
MIXERS - I/Q RECEIVERS - CHIP
3
3 - 144
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC571
v03.0808
GaAs MMIC I/Q DOWNCONVERTER
21 - 25 GHz
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film
substrates are recommended for bringing RF to and from the chip (Figure 1). If
0.254mm (10 mil) thick alumina thin film substrates must be used, the die should
be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the
surface of the substrate. One way to accomplish this is to attach the 0.102mm
(4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab)
which is then attached to the ground plane (Figure 2).
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
0.076mm
(0.003”)
RF Ground Plane
Microstrip substrates should be brought as close to the die as possible in order
to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm (3
mils).
Handling Precautions
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
Follow these precautions to avoid permanent damage.
Figure 1.
Storage: All bare die are placed in either Waffle or Gel based ESD protective
containers, and then sealed in an ESD protective bag for shipment. Once the
sealed ESD protective bag has been opened, all die should be stored in a dry
nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean
the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against ESD strikes.
Transients: Suppress instrument and bias supply transients while bias is applied.
Use shielded signal and bias cables to minimize inductive pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with
a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and
should not be touched with vacuum collet, tweezers, or fingers.
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
0.076mm
(0.003”)
RF Ground Plane
0.150mm (0.005”) Thick
Moly Tab
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms
or with electrically conductive epoxy. The mounting surface should be clean and
flat.
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
Figure 2.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature
of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip
to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for
attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the
perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
3
MIXERS - I/Q RECEIVERS - CHIP
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
Wire Bonding
Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire is recommended. Thermosonic wirebonding with a nominal stage
temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use
the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on
the package or substrate. All bonds should be as short as possible <0.31 mm (12 mils).
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
3 - 145