HMC520


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
Customised Pack Sizes / Qtys

Assembly Assistance

Support for all industry recognised
supply formats:

Die handling consultancy

Hi-Rel die qualification

Hot & Cold die probing

Electrical test & trimming
o Waffle Pack
o Gel Pak
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Onsite storage, stockholding &
scheduling
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100% Visual Inspection
o MIL-STD 883 Condition A
o MIL-STD 883 Condition A
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On-site failure analysis

Bespoke 24 Hour monitored
storage systems for secure long
term product support

On-site failure analysis
Contact
[email protected]
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HMC520
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HMC520
v01.1007
MIXERS - I/Q MIXERS / IRM - CHIP
2
GaAs MMIC I/Q MIXER
6 - 10 GHz
Typical Applications
Features
The HMC520 is ideal for:
Wide IF Bandwidth: DC - 3.5 GHz
• Point-to-Point and Point-to-Multi-Point Radio
Image Rejection: 40 dB
• C-Band VSAT
LO to RF Isolation: 45 dB
• Military Radar and ECM
High Input IP3: +22 dBm
Die Size: 1.49 x 1.14 x 0.1 mm
Functional Diagram
General Description
The HMC520 is a compact I/Q MMIC mixer which can
be used as either an Image Reject Mixer or a Single
Sideband Upconverter. The chip utilizes two standard
Hittite double balanced mixer cells and a 90 degree
hybrid fabricated in a GaAs MESFET process. All
data shown below is taken with the chip mounted in
a 50 Ohm test fixture and includes the effects of 1 mil
diameter x 20 mil length bond wires on each port. A
low frequency quadrature hybrid was used to produce
a 100 MHz USB IF output. This product is a much
smaller alternative to hybrid style Image Reject Mixers
and Single Sideband Upconverter assemblies.
Electrical Specifi cations, TA = +25° C, IF= 100 MHz, LO = +15 dBm*
Parameter
Min.
Frequency Range, RF/LO
Frequency Range, IF
Max.
Min.
7
20
1 dB Compression (Input)
40
Typ.
Max.
7.1 - 8.5
DC - 3.5
Conversion Loss (As IRM)
Image Rejection
Typ.
6 - 10
GHz
DC - 3.5
10
7
30
+12
Units
GHz
9
dB
40
dB
+12
dBm
LO to RF Isolation
35
45
40
50
dB
LO to IF Isolation
16
22
17
22
dB
dBm
IP3 (Input)
+22
+23
Amplitude Balance
0.3
0.1
dB
4
3
Deg
Phase Balance
* Unless otherwise noted, all measurements performed as downconverter.
2 - 64
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC520
v01.1007
GaAs MMIC I/Q MIXER
6 - 10 GHz
Data Taken As IRM With External IF 90° Hybrid
Image Rejection vs. Temperature
0
2
60
IMAGE REJECTION (dB)
CONVERSION GAIN (dB)
50
-5
-10
+25C
-15
+85C
-55C
40
30
+25C
+85C
-55C
20
10
-20
0
5
6
7
8
9
10
11
5
6
RF FREQUENCY (GHz)
Conversion Gain vs. LO Drive
8
9
10
11
10
11
10
11
Return Loss
0
0
RF
LO
-5
-5
RETURN LOSS (dB)
CONVERSION GAIN (dB)
7
RF FREQUENCY (GHz)
-10
+11 dBm
+13 dBm
+15 dBm
+17 dBm
+19 dBm
-15
-10
MIXERS - I/Q, IRMS- CHIP
Conversion Gain vs. Temperature
-15
-20
-20
-25
5
6
7
8
9
10
11
5
6
RF FREQUENCY (GHz)
7
8
9
FREQUENCY (GHz)
Input IP3 vs. LO Drive
Input P1dB vs. Temperature
30
20
18
25
16
20
IP3 (dBm)
P1dB (dBm)
14
12
10
8
+25C
+85C
-55C
6
15
LO = +13 dBm
LO = +15 dBm
LO = +17 dBm
LO = +19 dBm
10
4
5
2
0
0
5
6
7
8
9
RF FREQUENCY (GHz)
10
11
5
6
7
8
9
RF FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
2 - 65
HMC520
v01.1007
GaAs MMIC I/Q MIXER
6 - 10 GHz
Quadrature Channel Data Taken Without IF 90° Hybrid
Isolations
2
IF Bandwidth*
-10
0
LO/IF2
RESPONSE (dB)
ISOLATION (dB)
-5
LO/IF1
-30
RF/IF1
-40
RF/IF2
LO/RF
-50
5
6
7
-10
-15
-20
-60
8
9
10
RETURN LOSS
CONVERSION GAIN
-25
0.5
11
1
RF FREQUENCY (GHz)
1.5
2
3
3.5
10
11
Phase Balance vs. LO Drive
10
2
PHASE BALANCE (degrees)
1.5
1
0.5
0
-0.5
LO = +13 dBm
LO = +15 dBm
LO = +17 dBm
LO = +19 dBm
-1
-1.5
-2
LO = +13 dBm
LO = +15 dBm
LO = +17 dBm
LO = +19 dBm
5
0
-5
-10
-15
5
6
7
8
9
10
5
11
6
RF FREQUENCY (GHz)
7
8
9
RF FREQUENCY (GHz)
Upconverter Performance Conversion
Gain vs. LO Drive
Upconverter Performance Sideband
Rejection vs. LO Drive
0
SIDEBAND REJECTION (dBc)
0
CONVERSION GAIN (dB)
2.5
IF FREQUENCY (GHz)
Amplitude Balance vs. LO Drive
AMPLITUDE BALANCE (dB)
MIXERS - I/Q MIXERS / IRM - CHIP
-20
-5
-10
LO = +11 dBm
LO = +13 dBm
LO = +15 dBm
LO = +17 dBm
LO = +19 dBm
-15
-20
-10
LO = +11 dBm
LO = +13 dBm
LO = +15 dBm
LO = +17 dBm
LO = +19 dBm
-20
-30
-40
-50
-60
5
6
7
8
9
10
RF FREQUENCY (GHz)
11
5
6
7
8
9
10
11
RF FREQUENCY (GHz)
* Conversion gain data taken with external IF 90° hybrid
2 - 66
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC520
v01.1007
GaAs MMIC I/Q MIXER
6 - 10 GHz
MxN Spurious Outputs
nLO Spur at RF Port
nLO
LO Freq. (GHz)
1
2
3
4
mRF
0
1
2
3
4
5.5
40
41
51
54
0
xx
-6
37
21
61
6.5
44
48
45
69
1
31
0
47
60
68
7.5
52
62
55
68
2
90
69
72
69
90
8.5
52
66
58
55
3
90
90
90
79
90
9.5
46
59
69
47
4
90
90
90
90
90
10.5
47
60
62
xx
LO = + 15 dBm
Values in dBc below input LO level measured at RF Port.
RF = 7.6 GHz @ -10 dBm
LO = 7.5 GHz @ +15 dBm
Data taken without IF hybrid
All values in dBc below IF power level
Absolute Maximum Ratings
RF / IF Input
+20 dBm
LO Drive
+27 dBm
Channel Temperature
150°C
Continuous Pdiss (T=85°C)
(derate 7.8 mW/°C above 85°C)
508 mW
Thermal Resistance (RTH)
(junction to die bottom)
128.2 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-55 to +85 deg °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Die Packaging Information [1]
Standard
Alternate
GP-2 (Gel Pack)
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
2
MIXERS - I/Q, IRMS- CHIP
Harmonics of LO
Outline Drawing
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004”
3. TYPICAL BOND PAD IS .004”
4. BACKSIDE METALIZATION: GOLD
5. BOND PAD METALIZATION: GOLD
6. BACKSIDE METAL IS GROUND
7. CONNECTION NOT REQUIRED FOR
UNLABELED BOND PADS.
8. OVERALL DIE SIZE ±.002”
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
2 - 67
HMC520
v01.1007
GaAs MMIC I/Q MIXER
6 - 10 GHz
Pad Descriptions
MIXERS - I/Q MIXERS / IRM - CHIP
2
2 - 68
Pad Number
Function
Description
1
RF
This pad is AC coupled and matched to
50 Ohms.
4
LO
This pad is AC coupled and matched to
50 Ohms.
2 (5)
IF2
3 (6)
IF1
GND
Interface Schematic
This pad is DC coupled. For applications not requiring
operation to DC, this port should be DC blocked externally
using a series capacitor whose value has been chosen to
pass the necessary IF frequency range. For operation to
DC, this pad must not source/sink more than 3mA of current
or die non-function and possible die failure will result. Pads
5 and 6 are alternate IF ports.
The backside of the die must be
connected to RF/DC ground.
Assembly Diagrams
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC520
v01.1007
GaAs MMIC I/Q MIXER
6 - 10 GHz
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film
substrates are recommended for bringing RF to and from the chip (Figure 1). If
0.254mm (10 mil) thick alumina thin film substrates must be used, the die should
be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the
surface of the substrate. One way to accomplish this is to attach the 0.102mm
(4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab)
which is then attached to the ground plane (Figure 2).
0.102mm (0.004”) Thick GaAs MMIC
0.076mm
(0.003”)
RF Ground Plane
Microstrip substrates should be brought as close to the die as possible in order
to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm (3
mils).
Handling Precautions
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
Follow these precautions to avoid permanent damage.
Figure 1.
Storage: All bare die are placed in either Waffle or Gel based ESD protective
containers, and then sealed in an ESD protective bag for shipment. Once the
sealed ESD protective bag has been opened, all die should be stored in a dry
nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean
the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against ESD strikes.
Transients: Suppress instrument and bias supply transients while bias is applied.
Use shielded signal and bias cables to minimize inductive pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with
a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and
should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms
or with electrically conductive epoxy. The mounting surface should be clean and
flat.
2
Wire Bond
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
0.076mm
(0.003”)
RF Ground Plane
MIXERS - I/Q, IRMS- CHIP
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
0.150mm (0.005”) Thick
Moly Tab
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
Figure 2.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature
of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip
to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for
attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the
perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire is recommended. Thermosonic wirebonding with a nominal stage
temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use
the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on
the package or substrate. All bonds should be as short as possible <0.31 mm (12 mils).
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
2 - 69