JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes 1SS187 Switching Diode SOT-23 FEATURES y Low forward voltage y Fast reverse recovery time MARKING: D3· 1 3 D3 2 Maximum Ratings @Ta=25℃ Parameter Symbol Limit Unit Non-Repetitive Peak Reverse Voltage VRM 85 V DC Blocking Voltage VR 80 V Forward Continuous Current IFM 300 mA Average Rectified Output Current IO 100 mA IFSM 2.0 A Power Dissipation PD 150 mW Thermal Resistance from Junction to Ambient RθJA 833 ℃/W TJ 150 ℃ Non-Repetitive Peak Forward Surge Current @t=8.3ms Junction Temperature TSTG Storage Temperature Range ℃ -55~+150 Electrical Characteristics @Ta=25℃ Parameter Reverse breakdown voltage Forward voltage Reverse current Symbol Min V (BR) 80 Typ Max Unit Conditions V IR=100μA VF1 0.61 V IF=1mA VF2 0.74 V IF=10mA VF3 0.92 1.2 V IF=100mA IR1 0.1 uA VR=30V IR2 0.5 uA VR=80V Capacitance between terminals CT 2.2 4.0 pF VR=0,f=1MHz Reverse recovery time t rr 1.6 4.0 ns IF=IR=10mA,Irr=0.1×IR www.cj-elec.com 1 B,Aug,2014 Typical Characteristics Forward 100 Characteristics Reverse 1000 30 Ta=100℃ 300 (mA) Characteristics 1 (nA) REVERSE CURRENT IR FORWARD CURRENT 3 Ta =2 5℃ IF Ta =1 00 ℃ 10 0.3 0.1 100 30 Ta=25℃ 10 3 0.03 0.01 0.0 0.2 0.4 0.6 FORWARD VOLTAGE 0.8 VF 1.0 1 1.2 20 40 REVERSE VOLTAGE Capacitance Characteristics 1.2 0 (V) 60 VR 80 (V) Power Derating Curve 200 (mW) 150 PD 1.1 POWER DISSIPATION CAPACITANCE BETWEEN TERMINALS CT (pF) Ta=25℃ f=1MHz 1.0 0.9 0.8 0 5 10 REVERSE VOLTAGE www.cj-elec.com 15 VR 100 50 0 20 (V) 0 25 50 75 AMBIENT TEMPERATURE 2 100 Ta 125 150 (℃) B,Aug,2014 Symbol A A1 A2 b c D E1 E e e1 L Dimensions In Millimeters Max. Min. 1.050 1.250 0.000 0.100 1.050 1.150 0.300 0.500 0.100 0.200 2.820 3.020 1.500 1.700 2.650 2.950 0.950(BSC) 1.800 2.000 0.300 0.600 0° 8° Dimensions In Inches Min. Max. 0.041 0.049 0.000 0.004 0.041 0.045 0.012 0.020 0.004 0.008 0.111 0.119 0.059 0.067 0.104 0.116 0.037(BSC) 0.071 0.079 0.012 0.024 0° 8° -3L 3B,Aug,2014 4 B,Aug,2014