JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes MMBD4148 SOT-23 SWITCHING DIODE FEATURES z Fast Switching Speed z For General Purpose Switching Applications z High Conductance 1 3 2 MARKING: KA2 Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃ Parameter Symbol Unit Limit Non-Repetitive Peak Reverse Voltage VRM 100 V Peak Repetitive Peak Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 75 V VR(RMS) 53 V Forward Continuous Current IFM 300 mA Average Rectified Output Current IO 150 mA Peak Forward Surge Current @t=1.0μs @ t=1.0s IFSM 2.0 1.0 A Power Dissipation Pd 350 mW RθJA 357 ℃/W Junction Temperature Tj 150 ℃ Storage Temperature TSTG -55~+150 ℃ RMS Reverse Voltage Thermal Resistance Junction to Ambient Electrical Ratings @Ta=25℃ Parameter Reverse breakdown voltage Forward voltage Reverse current Capacitance between terminals Reverse recovery time Symbol V (BR) Min Typ Max Unit 75 Conditions V IR=100μA VF1 0.715 V IF=1mA VF2 0.855 V IF=10mA VF3 1.0 V IF=50mA VF4 1.25 V IF=150mA IR1 2.5 μA VR=75V IR2 25 nA VR=20V CT 2 pF VR=0V,f=1MHz trr 4 ns IF=IR=10mA Irr=0.1XIR,RL=100Ω A,May,2011 Typical Characteristics MMBD4148 Reverse Characteristics 1000 300 100 (nA) 30 REVERSE CURRENT IR 10 T= a 2 5℃ T= a 1 00 ℃ FORWARD CURRENT Ta=100℃ 100 IF (mA) 300 3 1 30 10 Ta=25℃ 3 0.3 0.1 0.0 1 0.4 0.8 FORWARD VOLTAGE 1.2 VF 1.6 0 20 (V) 40 REVERSE VOLTAGE 60 VR 80 (V) Power Derating Curve Capacitance Characteristics 400 1.4 Ta=25℃ (mW) 300 PD 1.3 POWER DISSIPATION CAPACITANCE BETWEEN TERMINALS CT (pF) f=1MHz 1.2 1.1 200 100 0 1.0 0 5 10 REVERSE VOLTAGE 15 VR (V) 20 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 150 (℃ ) A,May,2011