1cd340acb92ae9f4bcb5d3d52440af55

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-523 Plastic-Encapsulate Diodes
1SS388
SOD-523
SCHOTTKY BARRIER DIODE
FEATURES
z Small pacakage
z Low forward voltage
z Low reverse current
MARKING: S3
The marking bar indicates the cathode
Solid dot = Green molding compound device,if none,
the normal device.
Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25 ℃
Parameter
Symbol
Limit
Unit
Peak reverse voltage
VRM
45
V
DC reverse voltage
VR
40
V
Maximum (peak) forward current
IFM
300
mA
Average forward current
IO
100
mA
IFSM
1000
mA
Power dissipation
PD
150
mW
Junction temperature
Tj
125
℃
Storage temperature
Tstg
Non-repetitive Peak Forward Surge
Current@t=8.3ms
℃
-55~+150
Electrical Ratings @Ta=25℃
Parameter
Forward voltage
Symbol
Typ
Max
Unit
Conditions
VF1
0.28
V
IF=1mA
VF2
0.36
V
IF=10mA
VF3
0.54
0.60
V
IF=50mA
5
μA
VR=10V
25
pF
VR=0,f=1MHZ
Reverse current
IR
Total capacitance
CT
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Min
18
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E,Mar,2015
Typical Characteristics
Forward
300
Characteristics
Reverse
100
Characteristics
100
REVERSE CURRENT IR
T=
a 25
℃
10
T=
a 10
0℃
FORWARD CURRENT
IF
(uA)
(mA)
Ta=100 ℃
1
0.1
0
100
200
300
FORWARD VOLTAGE
400
VF
500
1
Ta=25 ℃
0.1
0.01
600
0
10
(mV)
20
30
REVERSE VOLTAGE
Capacitance Characteristics
20
10
VR
40
(V)
Power Derating Curve
175
Ta=25℃
(mW)
150
125
PD
15
POWER DISSIPATION
CAPACITANCE BETWEEN TERMINALS
CT (pF)
f=1MHz
10
5
100
75
50
25
0
0
5
10
15
REVERSE VOLTAGE
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20
VR
25
0
30
0
25
50
AMBIENT TEMPERATURE
(V)
2
75
100
Ta
125
(℃ )
E,Mar,2015
SOD-523 Package Outline Dimensions
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A
A1
b
c
D
E
E1
E2
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0.510
0.770
0.500
0.700
0.250
0.350
0.080
0.150
0.750
0.850
1.100
1.300
1.500
1.700
0.200 REF
0.010
0.070
7° REF
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0LQ
0D[
0.020
0.031
0.020
0.028
0.010
0.014
0.003
0.006
0.030
0.033
0.043
0.051
0.059
0.067
0.008 REF
0.001
0.003
7° REF
SOD-523 Suggested Pad Layout
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SOD-523 Tape and Reel
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4
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