JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes BAP50-03 SOD-323 GENERAL PURPOSE PIN DIODE FEATURES y Low diode capacitance y Low diode forward resistance MARKING: A81 The marking bar indicates the cathode Solid dot = Green molding compound device,if none, the normal device. Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃ Parameter Symbol Limit Continuous Reverse Voltage VR 50 V Continuous Forward Current IF 50 mA Power Dissipation PD 200 mW RθJA 85 ℃/W Junction Temperature Tj 150 ℃ Storage Temperature TSTG -55~+150 ℃ Thermal Resistance Junction to Ambient Unit Electrical Ratings @Ta=25℃ Parameter Symbol Min Continuous reverse voltage VR 50 Forward voltage VF Reverse current Diode capacitance Diode forward resistance Typ Max Unit Conditions V IR=10µA 1.1 V IF=50mA IR 100 nA VR=50V Cd1 0.91 pF Cd2 0.55 pF VR=1V,f=1MHz Cd3 0.35 pF VR=5V,f=1MHz rD 40 Ω IF=0.5mA , f=100MHz; note1 rD 25 Ω IF=1mA , f=100MHz;note1 rD 5 Ω IF=10mA , f=100MHz;note1 VR=0V,f=1MHz Note 1. Guaranteed on AQL basis: inspection level S4,AQL 1.0. www.cj-elec.com 1 D,Mar,2015 A Typical Characteristics Forward 50 Characteristics Characteristics (uA) (mA) Ta=100 ℃ 1 0.5 0.6 0.7 Ta =2 5℃ Ta =1 00 ℃ 10 REVERSE CURRENT IR IF FORWARD CURRENT Reverse 0.1 0.8 FORWARD VOLTAGE VF 0.9 Ta=25 ℃ 1E-3 1.0 50 10 (V) 100 REVERSE VOLTAGE Capacitance Characteristics 1.0 0.01 VR (V) Power Derating Curve 250 200 PD (mW) 0.8 0.6 150 POWER DISSIPATION CAPACITANCE BETWEEN TERMINALS CT (pF) Ta=25℃ f=1MHz 0.4 0.2 0.0 0 5 10 REVERSE VOLTAGE www.cj-elec.com 15 VR 100 50 0 20 0 25 50 75 AMBIENT TEMPERATURE (V) 2 100 Ta 125 150 (℃ ) D,Mar,2015 SOD-323 Package Outline Dimensions SOD-323 Suggested Pad Layout www.cj-elec.com 3 D,Mar,2015 SOD-323 Tape and Reel www.cj-elec.com 4 D,Mar,2015