MDE Semiconductor, Inc. SMD15KPA CELL DATA SHEET Preliminary （SILICON-AVALANCHE HIGH SURGE DIODES） FEATURES ．Glass passivated chip junction ．Bipolar electrical characteristics ．15000W peak pulse power capability on 10/1000us waveform ．Excellent clamping capability ．Repetition rate（duty cycle）：0.05﹪ ．Low incremental surge resistance . Fast response time: typically less than 1.0ps from 0 Volts to BV MECHANICAL DATA Terminal：Silver plated lead ,solderable per MIL-STD-750,Method 2026 Mounting Position：Any for CA Series Weight：1.4±0.1g SMD15KPA PART NUMBER UNI-POLAR BI-POLAR SMD15KPA17A SMD15KPA60A SMD15KPA280A SMD15KPA17CA SMD15KPA60CA REVERSE STANDOFF VOLTAGE VRWM(V) 17 60 280 REVERSE MAXIMUN TEST PEAK BREAKDOWN LEAKAGE CLAMPING CURRE PULSE VOLTAGE VBR(V) NT IT CURRENT @ VRWM VOLTAGE MIN. @IT Ipp (A) IR(μA) @IPP VC (V) (mA) 18.99 67.0 312.8 50 5 5 515.4 155.0 33.2 5000 10 10 29.3 97.4 454.5 For bidirectional type having Vrwm of 30 volts and less, the IR limit is double. 1