SSF3620 30V Dual N-Channel MOSFET DESCRIPTION The SSF3620 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. Schematic Diagram GENERAL FEATURES ● VDS = 30V,ID =7A RDS(ON) < 30mΩ @ VGS=4.5V RDS(ON) < 18.5mΩ @ VGS=10V ● High Power and current handing capability ● Lead free product ● Surface Mount Package Marking and Pin Assignment APPLICATIONS ●PWM applications ●Load switch ●Power management SOP-8 Top View PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size Tape Width Quantity SSF3620 SSF3620 SOP-8 Ø330mm 12mm 3000 units ABSOLUTE MAXIMUM RATINGS (T A=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS 30 V Gate-Source Voltage V GS ±20 V ID（25℃） 7 A ID（70℃） 5.8 A IDM 25 A PD 2 W TJ,TSTG -55 To 150 ℃ R θJA 62.5 ℃/W Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) ELECTRICAL CHARACTERISTICS (T A=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA Zero Gate Voltage Drain Current IDSS VDS=30V,VGS=0V www.goodark.com Page 1 of 6 30 V 1 μA Rev.2.0 SSF3620 30V Dual N-Channel MOSFET Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V ±100 nA Gate Threshold Voltage VGS(th) V DS=VGS,ID=250μA 1.5 2 V Drain-Source On-State Resistance RDS(ON) VGS=4.5V, ID=3.5A 21 30 mΩ VGS=10V, ID=7A 16 18.5 mΩ VDS=5V,ID=11A 10 S 600 PF 75 PF ON CHARACTERISTICS (Note 3) Forward Transconductance g FS 1 DYNAMIC CHARACTERISTICS (Note4) Input Capacitance C lss V DS=15V,VGS=0V, F=1.0MHz Output Capacitance C oss Reverse Transfer Capacitance C rss 45 PF Turn-on Delay Time td(on) 4 nS Turn-on Rise Time tr 12 nS 22 nS SWITCHING CHARACTERISTICS (Note 4) Turn-Off Delay Time VDS=15V,VGS=10V,RGEN=6Ω ID=1A td(off) Turn-Off Fall Time tf 4 nS Total Gate Charge Qg 12 nC Gate-Source Charge Qgs 1.2 nC Gate-Drain Charge Qgd 3.8 nC Body Diode Reverse Recovery Time Trr 13 nS Body Diode Reverse Recovery Charge Qrr 7 nC VDS=15V,ID=7A,VGS=10V IF=7A, dI/dt=100A/µs DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) V SD VGS=0V,IS=3A 0.7 1.2 V NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on 1in2 FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. www.goodark.com Page 2 of 6 Rev.2.0 SSF3620 30V Dual N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Vdd Vgs Rgen D toff tf td(off) 90% Rl Vin ton tr td(on) Vout VOUT 90% INVERTED 10% 10% G 90% VIN S 50% 50% 10% PULSE WIDTH Figure 2:Switching Waveforms PD Power(W) ID- Drain Current (A） Figure 1:Switching Test Circuit TJ-Junction Temperature(℃) TJ-Junction Temperature(℃) Figure 3 Power Dissipation ID- Drain Current (A) Rdson On-Resistance(mΩ) Figure 4 Drain Current ID- Drain Current (A) Vds Drain-Source Voltage (V) Figure 5 Output CHARACTERISTICS www.goodark.com Figure 6 Drain-Source On-Resistance Page 3 of 6 Rev.2.0 SSF3620 ID- Drain Current (A) Normalized On-Resistance 30V Dual N-Channel MOSFET Vgs Gate-Source Voltage (V) TJ-Junction Temperature(℃) Figure 8 Drain-Source On-Resistance C Capacitance (pF) Rdson On-Resistance(mΩ) Figure 7 Transfer Characteristics Vds Drain-Source Voltage (V) Figure 9 Rdson vs Vgs Figure 10 Capacitance vs Vds Is- Reverse Drain Current (A) Vgs Gate-Source Voltage (V) Vgs Gate-Source Voltage (V) Qg Gate Charge (nC) Figure 11 Gate Charge www.goodark.com Vsd Source-Drain Voltage (V) Figure 12 Source- Drain Diode Forward Page 4 of 6 Rev.2.0 SSF3620 ID- Drain Current (A) 30V Dual N-Channel MOSFET Vds Drain-Source Voltage (V) Safe Operation Area Z thJA Normalized Transient Thermal Resistance Figure 13 Square Wave Pluse Duration(sec) Figure 14 Normalized Maximum Transient Thermal Impedance www.goodark.com Page 5 of 6 Rev.2.0 SSF3620 30V Dual N-Channel MOSFET SOP-8 PACKAGE INFORMATION NOTES： 1. Dimensions are inclusive of plating 2. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils. 3. Dimension L is measured in gauge plane. 4. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. www.goodark.com Page 6 of 6 Rev.2.0