SSFD6035

SSFD6035
60V P-Channel MOSFET
D
DESCRIPTION
The SSFD6035 uses advanced trench
technology to provide excellent RDS(ON)
and low gate charge .This device is
suitable for use as a load switch or in
PWM applications.
G
S
Schematic Diagram
GENERAL FEATURES
● VDS =- 60V,ID =-26A
RDS(ON) < 40mΩ @ VGS=-10V
RDS(ON) < 55mΩ @ VGS=-4.5V
● High Power and current handing capability
● Lead free product
● Surface Mount Package
Marking and Pin Assignment
APPLICATIONS
●PWM applications
●Load switch
●Power management
SSFD6035 Top View
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
Tape Width
Quantity
SSFD6035
SSFD6035
DPAK
-
-
-
ABSOLUTE MAXIMUM RATINGS (TA=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V DS
-60
V
Gate-Source Voltage
V GS
±20
V
ID(25℃)
-26
A
ID(70℃)
-20
A
IDM
-60
A
PD
60
W
TJ,TSTG
-55 To 175
℃
R θJA
25
℃/W
Drain Current-Continuous@ Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
ELECTRICAL CHARACTERISTICS (T A=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
www.goodark.com
BV DSS
VGS=0V ID=-250μA
Page 1 of 6
-60
V
Rev.2.0
SSFD6035
60V P-Channel MOSFET
Zero Gate Voltage Drain Current
IDSS
V DS=-48V,VGS=0V
-1
μA
Gate-Body Leakage Current
IGSS
VGS=±20V,V DS=0V
±100
nA
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=-250μA
-1.8
-2.5
V
Drain-Source On-State Resistance
RDS(ON)
VGS=-10V, ID=-20A
31
40
mΩ
VGS=-4.5V, ID=-20A
42
55
mΩ
ON CHARACTERISTICS (Note 3)
Forward Transconductance
g FS
VDS=-5V,ID=-20A
-1
5
S
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
C lss
V DS=-30V,VGS=0V,
F=1.0MHz
3060
PF
300
PF
Output Capacitance
Coss
Reverse Transfer Capacitance
C rss
205
PF
Turn-on Delay Time
td(on)
14
nS
Turn-on Rise Time
tr
20
nS
40
nS
SWITCHING CHARACTERISTICS (Note 4)
Turn-Off Delay Time
td(off)
VDS=-30V,V GS=-10V,RGEN=3Ω
ID=1A
Turn-Off Fall Time
tf
19
nS
Total Gate Charge
Qg
48
nC
Gate-Source Charge
Q gs
11
nC
Gate-Drain Charge
Q gd
10
nC
Body Diode Reverse Recovery Time
T rr
40
nS
Body Diode Reverse Recovery Charge
Qrr
56
nC
VDS=-30V,ID=-20A,V GS=-10V
IF=-20A, dI/dt=100A/µs
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
V SD
VGS=0V,IS=-1A
-0.72
-1
V
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on 1in2 FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
www.goodark.com
Page 2 of 6
Rev.2.0
SSFD6035
60V P-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
ton
tr
td(on)
toff
tf
td(off)
90%
VOUT
90%
INVERTED
10%
10%
90%
VIN
50%
50%
10%
PULSE WIDTH
Figure 2:Switching Waveforms
PD Power(W)
-ID- Drain Current (A）
Figure 1:Switching Test Circuit
TJ-Junction Temperature(℃)
TJ-Junction Temperature(℃)
Figure 3 Power Dissipation
-ID- Drain Current (A)
Rdson On-Resistance(mΩ)
Figure 4 Drain Current
-ID- Drain Current (A)
-Vds Drain-Source Voltage (V)
Figure 5 Output CHARACTERISTICS
www.goodark.com
Figure 6 Drain-Source On-Resistance
Page 3 of 6
Rev.2.0
SSFD6035
-ID- Drain Current (A)
Normalized On-Resistance
60V P-Channel MOSFET
-Vgs Gate-Source Voltage (V)
TJ-Junction Temperature(℃)
Figure 8 Drain-Source On-Resistance
C Capacitance (pF)
Rdson On-Resistance(mΩ)
Figure 7 Transfer Characteristics
-Vds Drain-Source Voltage (V)
Figure 9 Rdson vs Vgs
Figure 10 Capacitance vs Vds
-Is- Reverse Drain Current (A)
-Vgs Gate-Source Voltage (V)
-Vgs Gate-Source Voltage (V)
Qg Gate Charge (nC)
Figure 11 Gate Charge
www.goodark.com
-Vsd Source-Drain Voltage (V)
Figure 12 Source- Drain Diode Forward
Page 4 of 6
Rev.2.0
SSFD6035
-ID- Drain Current (A)
60V P-Channel MOSFET
Vds Drain-Source Voltage (V)
Safe Operation Area
ZthJA Normalized Transient
Thermal Resistance
Figure 13
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
www.goodark.com
Page 5 of 6
Rev.2.0
SSFD6035
60V P-Channel MOSFET
DPAK PACKAGE INFORMATION
Dimensions in Millimeters
UNIT: mm
NOTES：
1. Dimensions are inclusive of plating
2. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils.
3. Dimension L is measured in gauge plane.
4. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
www.goodark.com
Page 6 of 6
Rev.2.0