DTB114GK Transistors −500mA / −50V Digital transistors (with built-in resistors) DTB114GK zApplications Inverter, Interface, Driver zExternal dimensions (Unit : mm) SMT3 2.9 zFeature 1) The built-in bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input, and parasitic effects are almost completely eliminated. 2) Only the on / off conditions need to be set for operation, making the device design easy. 3) Higher mounting densities can be achieved. 1.1 0.4 0.8 1.6 2.8 (3) (2) 0.15 (1)Emitter (2)Base (3)Collector 1.9 0.3Min. (1) 0.95 0.95 Each lead has same dimensions Abbreviated symbol : L14 zStructure PNP epitaxial planar silicon transistor (Resistor built-in type) zPackaging specifications Package SMT3 Packaging type Taping Code Basic ordering unit (pieces) Part No. zEquivalent circuit C B R T146 E E : Emitter C : Collector B : Base 3000 DTB114GK R=10kΩ (typ.) zAbsolute maximum ratings (Ta=25°C) Symbol Limits Unit Collector-base voltage VCBO −50 V Collector-emitter voltage VCEO −50 V Emitter-base voltage Parameter VEBO −5 V Collector current IC −500 mA Collector power dissipation Pd 200 mW ∗ Junction temperature Tj 150 C Storage temperature Tstg −55 to +150 C ∗ Each pin mounted on the recommended land Rev.B 1/2 DTB114GK Transistors zElectrical characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage Parameter BVCBO −50 − − V IC= −50µA Collector-emitter breakdown voltage BVCEO −50 − − V IC= −1mA Emitter-base breakdown voltage BVEBO −5 − − V IE= −720µA Collector cutoff current ICBO − − −0.5 µA VCB= −50V Emitter cutoff curren IEBO − − −580 µA VEB= −4V VCE(sat) − − −0.3 V IC/IB= −50mA/−2.5mA IC= −50mA , VCE= −5V Collector-emitter saturation voltage hFE 56 − − − Input resistance R 7 10 13 kΩ Transition frequency fT ∗ − 200 − MHz DC current transfer ratio Conditions − VCE= −10V , IE=50mA , f=100MHz ∗Characteristics of built-in transistor 1000 VCE=5V Ta=100°C DC CURRENT GAIN : hFE 500 Ta=25°C 200 100 50 Ta= −40°C 20 10 5 2 1 −500µ −1m −2m −5m −10m −20m −50m −100m −200m −500m COLLECTOR CURRENT : IC (A) Fig.1 DC current transfer ratio vs. Collector current COLLECTOR SATURATION VOLTAGE : VCE(sat)(V) zElectrical characteristics curves −1 IC/IB=20 −500m −200m Ta=100°C −100m −50m Ta=25°C −20m Ta= −40°C −10m −5m −2m −1m −500µ −1m −2m −5m −10m −20m −50m−100m −200m −500m COLLECTOR CURRENT : IC (A) Fig.2 Collector-Emitter saturation voltage vs. Collector current Rev.B 2/2 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1