DTA115TM / DTA115TE / DTA115TUA / DTA115TKA / DTA115TSA Transistors Digital transistors (built-in resistor) DTA115TM / DTA115TE / DTA115TUA / DTA115TKA / DTA115TSA zExternal dimensions (Unit : mm) DTA115TM 1.2 0.8 (3) 0.8 0.2 (2) 0.4 0.4 1.2 0.32 0.2 0.13 0~0.1 0.5 0.22 (1) 1.6 (2) 0.2 (3) 1.0 (1) 0.5 0.5 DTA115TE (1) Base (2) Emitter (3) Collector 0.15Max. 0.2 ROHM : VMT3 0.3 zFeatures 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors. 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input, and parasitic effects are almost completely eliminated. 3) Only the on / off conditions need to be set for operation, making device design easy. 4) Higher mounting densities can be achieved. 0.8 E 0.7 2.0 (2) R1 (1) DTA115TUA 1.25 2.1 Each lead has same dimensions 0.9 0.7 0.15 0.2 E : Emitter C : Collector B : Base (1) Emitter (2) Base (3) Collector 0~0.1 0.1Min. ROHM : UMT3 EIAJ : SC-70 0.95 0.95 1.9 2.9 (3) 0.4 (1) DTA115TKA (2) 1.6 2.8 0.8 0.15 Each lead has same dimensions (1) Emitter (2) Base (3) Collector 0~0.1 0.3Min. ROHM : SMT3 EIAJ : SC-59 DTA115TSA 1.1 C B (1) Emitter (2) Base (3) Collector 1.3 0~0.1 (3) ROHM : EMT3 EIAJ : SC-75A 0.65 0.65 0.1Min. 0.3 0.55 0.15 1.6 zEquivalent circuit 2 (15Min.) 3Min. 3 4 0.45 Taping specifications 2.5 0.5 0.45 5 ROHM : SPT EIAJ : SC-72 (1)(2)(3) (1) Emitter (2) Collector (3) Base Rev.A 1/2 DTA115TM / DTA115TE / DTA115TUA / DTA115TKA / DTA115TSA Transistors zAbsolute maximum ratings (Ta=25°C) Symbol Limits Unit Collector-base voltage VCBO −50 V Collector-emitter voltage VCEO −50 V Emitter-base voltage VEBO −5 V IC −100 mA Parameter Collector current 150 DTA115TM / DTA115TE Collector power dissipation DTA115TUA / DTA115TKA 200 PC DTA115TSA mW 300 Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C zPackage, marking, and packaging specifications DTA115TM DTA115TE Package VMT3 EMT3 UMT3 SMT3 Marking 99 99 99 99 − Packaging code T2L TL T106 T146 TP Basic ordering unit (pieces) 8000 3000 3000 3000 5000 Part No. DTA115TUA DTA115TKA DTA115TSA SPT zElectrical characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage BVCBO −50 − − V IC= −50µA Collector-emitter breakdown voltage BVCEO −50 − − BVEBO −5 − − V V IC= −1mA Emitter-base breakdown voltage Collector cutoff current ICBO − − −0.5 µA VCB= −50V Emitter cutoff current IEBO − − −0.5 µA VEB= −4V VCE(sat) − − −0.3 IC/IB= −1mA/−0.1mA hFE 100 250 600 V − Input resistance R1 100 130 kΩ − Transition frequency fT 70 − 250 − MHZ VCE= −10V , IE=5mA , f=100MHZ ∗ Parameter Collector-emitter saturation voltage DC current transfer ratio Conditions IE= −50µA IC= −1mA , VCE= −5V ∗Transition frequency of the device. 1k VCE=5V Ta=25°C Ta=100°C DC CURRENT GAIN : hFE 500 200 100 Ta= −40°C 50 20 10 5 2 1 10µ 20µ 50µ 100µ 200µ 500µ 1m 2m COLLECTOR CURRENT : IC (A) Fig.1 DC current gain vs. Collector current 5m 10m CORRECTOR SATURATION VOLTAGE : VCE(sat) (V) zElectrical characteristics curves 1 IC/IB=10/1 500m 200m Ta=100°C 100m Ta=25°C 50m 20m Ta= −40°C 10m 5m 2m 1m 10µ 20µ 50µ 100µ 200µ 500µ 1m 2m 5m 10m COLLECTOR CURRENT : IC (A) Fig.2 Collector-Emitter saturation voltage vs. Collector current Rev.A 2/2 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document use silicon as a basic material. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.0