Datasheet

AOZ1325DI
Dual Channel Load Switch with
Controlled Slew Rate
General Description
Features
The AOZ1325DI is a P-channel high-side load switch
with slew rates of 1ms. The AOZ1325DI provide an
output discharge circuit to quickly discharge the output
when the switch is disabled.
●
1.6V to 5.5V input voltage range
●
Low RDS(ON) (250mΩ typical at 1.8V)
●
Controlled turn-on slew rate: 1ms
●
Output discharge function
●
Low quiescent current (1.0µA typical)
●
Low Shutdown Current (<1µA)
●
4kV ESD rating
●
Tiny 3x3mm DFN package
The P-channel MOSFET has typical on resistance of
250mΩ at 1.8V. The very low RDS(ON) significantly
reduces the power path dissipation. The input voltage
range of AOZ1325DI is from 1.6V to 5.5V. The control
input is compatible with both TTL and CMOS logic. Ultra
low quiescent current makes this product suitable for any
portable applications.
The AOZ1325DI is available in 8-pin 3x3 DFN package
and is rated over the -40°C to +85°C ambient
temperature range.
Applications
●
Cellular phones
●
MP3 players
●
Personal media players
●
Notebook computers
●
Digital still cameras
●
Hot-swap applications
Typical Applications Circuit
VIN
VOUT
OUT1
IN1
C1
1µF
OFF ON
C3
0.1µF
EN1
AOZ1325DI
VOUT
VIN
OUT2
IN2
C2
1µF
OFF ON
C4
0.1µF
EN2
GND
Rev. 1.2 September 2009
www.aosmd.com
Page 1 of 12
AOZ1325DI
Ordering Information
Part Number
Slew Rate
AOZ1325DI
1ms
Output Discharge
Yes
Package
Environmental
3x3 DFN-8
RoHS Compliant
Green Product
AOS Green Products use reduced levels of Halogens, and are also RoHS compliant.
Please visit www.aosmd.com/web/quality/rohs_compliant.jsp for additional information.
Pin Configuration
Top View
VIN1 1
8
VOUT1
EN1 2
7
NC
EN2 3
6
GND
VIN2 4
5
VOUT2
3mm x 3mm DFN-8
Pin Description
Pin Name
Pin Number
Pin Function
VIN1
1
Input. IN is the drain of the P-channel MOSFET. It is the supply input of the IC.
EN1
2
Enable. The P-channel MOSFET turns on when EN is logic high.
EN2
3
Enable. The P-channel MOSFET turns on when EN is logic high.
VIN2
4
Input. IN is the drain of the P-channel MOSFET. It is the supply input of the IC.
VOUT2
5
Output. OUT is the source of the P-channel MOSFET.
GND
6
Ground.
NC
7
No Connect.
VOUT1
8
Output. OUT is the source of the P-channel MOSFET.
Rev. 1.2 September 2009
www.aosmd.com
Page 2 of 12
AOZ1325DI
Absolute Maximum Ratings
Thermal Ratings
Exceeding the Absolute Maximum ratings may damage the device.
The device is not guaranteed to operate beyond the Thermal Ratings.
Parameter
Rating
Parameter
Rating
Input Voltage (VIN)
6V
Input Voltage (VIN)
+1.6 to +5.5V
Enable Voltage (VEN)
VIN + 0.3V
Junction Temperature (TJ)
-40°C to +125°C
TA = 25°C
±1.0A
Package Thermal Resistance,
3 X 3 DFN-8 (ΘJA)
136°C/W
TA = 85°C
±0.7A
Continuous Drain Current (ID)
Pulsed Drain Current (IDP)
±6A
Continuous Diode Current (IS)
-50mA
Storage Temperature (TS)
-55°C to +150°C
ESD Rating (1)
4kV
Note:
1. Devices are inherently ESD sensitive, handling precautions are
required. Human body model is a 100pF capacitor discharging
through a 1.5kΩ resistor.
Electrical Characteristics
TA = 25°C, VIN = VEN = 5V, unless otherwise specified.
Symbol
Parameter
Conditions
Min.
Typ.
Units
1.2
V
3
µA
1
μA
VEN_TH
Enable Threshold Voltage
VIN = 1.6V to 4.5V, ID = -250uA
IIN
Quiescent Supply Current
(Single Channel)
VIN =VEN = 5.5V
OFF state Leakage Current
(Single Channel)
VIN = +5.5V, VEN = 0V
Switch On-Resistance
(Single Channel)
VIN = 3.3V, ID = -100mA, VEN = 1.5V
VIN = 1.8V, ID = -100mA, VEN = 1.5V
150
250
210
350
mΩ
mΩ
Turn-off Resistance
(Single Channel)
VIN = 3.6V, ITEST = 1mA, VEN = 0V
162
220
Ω
Output Turn-on Delay
VIN = 3.6V, ID = -100mA, VEN = 1.5V
320
700
µs
Output Rise-time
VIN = 3.6V, ID = -100mA, VEN = 1.5V
1000
1500
µs
Output Turn-off Delay
VIN = 3.6V, ID = -100mA,
VEN = 1.5V without output cap
60
200
ns
Output Fall-time
VIN = 3.6V, ID = -100mA,
VEN = 1.5V without output cap
20
100
ns
IOFF
RDS(ON)
RSHUTDOWN
0.3
Max
1.6
DELAY TIME
TD(ON)
TR
TD(OFF)
TF
Rev. 1.2 September 2009
www.aosmd.com
500
Page 3 of 12
AOZ1325DI
Typical Operating Characteristic
220
RDS(ON) Variance with Temperature
EN Threshold Voltage vs. Input Voltage
1.1
Vds = 3.6V, Id = 0.1A
EN Threshold Votlage (V)
RDS(ON) (mΩ)
180
160
140
0.9
0.8
0.7
0.6
120
100
-40
VIH, Id = -250A
VIL, Id = -250A
1.0
200
0.5
-20
0
20
40
60
80
0.4
1.5
100 120 140 160
2.0
2.5
3.0
Temperature (°C)
3.5
4.0
4.5
5.0
5.5
Input Voltage (V)
ON Resistance vs. Input Voltage
ON Resistance vs. Input Voltage
400
800
Vin=1.8V
Vin=2.5V
Vin=4.5V
700
350
VDROP) (mV)
RDS(ON) (mΩ)
600
300
IL = 1.2A
IL = 0.9A
IL = 0.1A
250
500
400
300
200
200
150
100
100
1.5
0
2.0
2.5
3.0 3.5 4.0 4.5
Input Voltage (V)
5.0
5.5
6.0
0
0.2
0.4
0.6
0.8
Load Current (A)
1.0
1.2
Rise Time vs. Input Voltage
Turn-on Delay vs. Input Voltage
1200
350
300
1000
Rise Time (μs)
Turn-On (μs)
250
200
150
800
600
400
100
200
50
0
1.5
2
2.5
Rev. 1.2 September 2009
3
3.5
Input Voltage (V)
4
4.5
5
www.aosmd.com
0
1.5
2
2.5
3
3.5
Input Voltage (V)
4
4.5
5
Page 4 of 12
AOZ1325DI
Typical Operating Characteristic (Continued)
Fall Time vs. Input Voltage
45
160
40
140
35
120
30
Fall Time (ns)
Turn-Off (ns)
Turn-off Delay vs. Input Voltage
180
100
80
25
20
60
15
40
10
20
5
0
1.5
2
2.5
Rev. 1.2 September 2009
3
3.5
Input Voltage (V)
4
4.5
5
www.aosmd.com
0
1.5
2
2.5
3
3.5
Input Voltage (V)
4
4.5
5
Page 5 of 12
AOZ1325DI
Functional Characteristics
Turn-On/Turn-Off Timing
ENABLE
2V/div
Turn-Off Timing
ENABLE
2V/div
VOUT
2V/div
VOUT
2V/div
IOUT
100mA/div
IOUT
100mA/div
Time: 4µs/div
Time: 40µs/div
Turn-On/Turn-Off Timing
Turn-Off Timing
ENABLE
2V/div
ENABLE
2V/div
VOUT
2V/div
VOUT
2V/div
IOUT
100mA/div
IOUT
100mA/div
Time: 400µs/div
Time: 10µs/div
Rev. 1.2 September 2009
www.aosmd.com
Page 6 of 12
AOZ1325DI
Timing Diagram
EN
VIH
VIL
90%
90%
10%
OUT
TD(OFF)
TD(ON)
TR
Figure 1. AOZ1325DI Timing Diagram
Functional Block Diagram
IN
OUT
Gate Driver &
Slew Rate
Control
160Ω
AOZ1325DI
EN
GND
Figure 2. Functional Block Diagram (single channel)
Rev. 1.2 September 2009
www.aosmd.com
Page 7 of 12
AOZ1325DI
Detailed Description
Internal Discharge Resistor
The AOZ1325DI has an internal 160Ω resistor to
discharge any remaining voltage from the system to
the ground that is store in a capacitive load. This
provides a safe shutdown of the system to prevent any
damages to the devices. This function is controlled from
the Enable pin.
Slew Rate Control
The AOZ1325DI is a family of P-channel high-side load
switches with controlled slew rate. The device is enabled
when the EN pin is high. Once enabled, the gate driver
and slew-rate control circuitry immediately raises the
source-to-gate voltage of the P-channel MOSFET to its
threshold level, and then gradually turns on the MOSFET
by linearly increases the source-to-gate voltage. This
slow turn-on action effectively limits the input inrush
current and provides a nice ramp for the output voltage.
After the MOSFET is fully enhanced, the AOZ1325DI
quickly increases the source-to-gate voltage to the full
input voltage to minimize on resistance and reduce
power dissipation.
Rev. 1.2 September 2009
AOZ1325DI has a slew rate of 1ms. This option
significantly reduces the inrush current when the
MOSFET turns on, allowing the use of very small input
capacitor. The AOZ1325DI also include an internal
output discharge circuit that quickly discharges the
output to ground when the device is disabled.
On/Off Control
The AOZ1325DI is enabled when the EN pin is asserted
high. The device is disabled when the EN pin is asserted
low. The EN input is compatible with both TTL and
CMOS logic.
www.aosmd.com
Page 8 of 12
PRELIMINARY INFORMATION
AOZ1325DI
Applications Information
Input Capacitor Selection
Power-up Sequence
Use a 1µF or larger capacitor for input bypassing.
Place the capacitor close to the IN pins of AOZ1325DI.
EN pin must be powered up after VIN pin, in order to
avoid latch-up, or mis-operation of switch. We do not
assume any liability or responsibility for any loss or
damage arising from misuse or inappropriate use of the
product.
Output Capacitor Selection
Use a 0.1µF or larger capacitor between OUT and GND.
The capacitance does not affect the turn-on slew rate.
However, a larger capacitor makes the initial turn-on
transient smoother.
Thermal Considerations
To ensure proper operation, the maximum junction
temperature (TJ(MAX)) of the AOZ1325DI should not
exceed 125°C. Several factors attribute to the junction
temperature rise: load current, MOSFET on resistance
(RDS (ON)), junction-to-ambient thermal resistance (ΘJA),
and ambient temperature (TA). Use the following
equation to determine the maximum continuous load
current ILOAD(MAX):
I LOAD ( MAX ) =
Layout Guidelines
Good PCB is important for improving the thermal
performance of AOZ1325DI. Place the input and output
bypass capacitors close to the IN and OUT pins. The
input and output PCB traces should be as wide as
possible for the given PCB space. Use a ground plane
to enhance the power dissipation capability of the device.
T J ( MAX ) – T A
--------------------------------------Θ JA × R DS ( ON )
where;
RDS(ON) is the maximum value of the MOSFET on resistance at
25°C.
Please note the maximum load current should not exceed
the absolute maximum current rating of the switch.
For example, when VIN = 1.8V, the maximum continuous
load current at room temperature is:
I LOAD ( MAX ) =
125°C – 25°C
----------------------------------------------- = 1.4A
136°C × R DS ( ON )
Since the calculated current is greater than the absolute
maximum current rating, the maximum load current at
VIN = 1.8V and room temperature is 1A. Exceeding the
maximum continuous load current may cause damage to
the device.
Rev. 1.2 September 2009
www.aosmd.com
Page 9 of 12
AOZ1325DI
Package Dimensions, DFN 3 x 3
0.10mm M
b
A1
θ1
L1
E1 E
c
e
A
TOP VIEW
SIDE VIEW
D
L
BOTTOM VIEW
RECOMMENDED LAND PATTERN
Dimensions in millimeters
Symbols
A
A1
b
c
0.58
0.40
3.00
0.65
UNIT: mm
D
E
E1
e
L
L1
θ1
Min.
0.70
0.00
0.24
0.08
Nom.
0.80
—
0.30
0.15
Max.
0.90
0.05
0.35
0.25
2.90 BSC
2.80 BSC
2.30 SC
0.65 BSC
0.20
0.38
0.45
0.05
—
—
0°
10°
12°
Dimensions in inches
Symbols
A
A1
b
c
D
E
E1
e
L
L1
θ1
Min.
0.028
0.000
0.009
0.003
Nom.
0.031
—
0.012
0.006
Max.
0.035
0.002
0.014
0.010
0.114 BSC
0.110 BSC
0.091 SC
0.026 BSC
0.008 0.015 0.018
0.002
—
—
0°
10°
12°
Notes:
1. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils each.
2. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
Rev. 1.2 September 2009
www.aosmd.com
Page 10 of 12
AOZ1325DI
Tape and Reel Dimensions, DFN 3 x 3
Tape
P2
P1
D1
D0
E1
K0
E2
E
B0
A0
P0
T
Feeding Direction
UNIT: mm
Package
A0
B0
K0
DFN 3x3 EP
3.40
±0.10
3.35
±0.10
1.10
±0.10
D0
D1
E
E1
1.00
8.00
1.75
1.50
+0.10/-0.00 +0.25/-0.00 +0.30/-0.10 ±0.10
Reel
E2
P0
P1
P2
T
3.50
±0.05
4.00
±0.10
4.00
±0.10
2.00
±0.05
0.23
±0.20
W1
S
R
K
M
N
H
UNIT: mm
Tape Size Reel Size
M
8mm
ø180
ø180.00
±0.50
N
60.0
±0.50
W1
8.4
+1.5/-0
H
13.0
±0.20
S
1.5
Min.
K
13.5
Min.
R
3.0
±0.50
Leader/Trailer and Orientation
Trailer Tape
300mm min.
Rev. 1.2 September 2009
Components Tape
Orientation in Pocket
www.aosmd.com
Leader Tape
500mm min.
Page 11 of 12
AOZ1325DI
Package Marking
DFN 3 x 3
Pin 1 Dot
$1 $2 $3 $4
$T $O $A $W
$L $T
This datasheet contains preliminary data; supplementary data may be published at a later date.
Alpha & Omega Semiconductor reserves the right to make changes at any time without notice.
LIFE SUPPORT POLICY
ALPHA & OMEGA SEMICONDUCTOR PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body or (b) support or sustain life, and (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury of
the user.
Rev. 1.2 September 2009
2. A critical component in any component of a life
support, device, or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
www.aosmd.com
Page 12 of 12