AOS Semiconductor Product Reliability Report AO6601, rev C Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc www.aosmd.com This AOS product reliability report summarizes the qualification result for AO6601. Accelerated environmental tests are performed on a specific sample size, and then followed by electrical test at end point. Review of final electrical test result confirms that AO6601 passes AOS quality and reliability requirements. The released product will be categorized by the process family and be monitored on a quarterly basis for continuously improving the product quality. Table of Contents: I. II. III. IV. Product Description Package and Die information Environmental Stress Test Summary and Result Reliability Evaluation I. Product Description: The AO6601 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. -RoHS Compliant -Halogen free Detailed information refers to datasheet. II. Die / Package Information: AO6601 Standard sub-micron Low voltage N+P channel Package Type TSOP6 Lead Frame Copper Die Attach Silver epoxy Bonding Wire Au wire Mold Material Epoxy resin with silica filler MSL (moisture sensitive level) Level 1 based on J-STD-020 Process Note * based on information provided by assembler and mold compound supplier III. Result of Reliability Stress for AO6601 Test Item Test Condition Time Point MSL Precondition 168hr 85°c /85%RH +3 cycle reflow@260°c HTGB HTRB HAST Pressure Pot Temperature Cycle Lot Attribution Total Sample size Number of Failures Standard - 7 lots 1100pcs 0 JESD22A113 Temp = 150 °c, Vgs=100% of Vgsmax 168hrs 500 hrs 1000 hrs 1 lot 231pcs 0 JESD22A108 Temp = 150 °c, Vds=80% of Vdsmax 168hrs 500 hrs 1000 hrs 77pcs / lot 231pcs 0 JESD22A108 130 +/- 2°°c, 85%RH, 33.3 psi, Vgs = 100% of Vgs max 121°°c, 29.7psi, RH=100% 100 hrs (Note A*) 6 lots 77pcs / lot 330pcs 0 JESD22A110 96 hrs (Note A*) 7 lots 55 pcs / lot 385pcs 0 JESD22A102 -65°°c to 150°°c, air to air 250 / 500 cycles (Note A*) 7 lots 55 pcs / lot 385pcs 0 JESD22A104 (Note A*) 55 pcs / lot 2 lots (Note A*) 1 lot 2 lots Note A: The reliability data presents total of available generic data up to the published date. IV. Reliability Evaluation FIT rate (per billion): 11 MTTF = 10747 years The presentation of FIT rate for the individual product reliability is restricted by the actual burn-in sample size of the selected product (AO6601). Failure Rate Determination is based on JEDEC Standard JESD 85. FIT means one failure per billion hours. 2 9 Failure Rate = Chi x 10 / [2 (N) (H) (Af)] 9 = 1.83 x 10 / [2 x (2x77x168+2x2x77x1000) x 258] = 11 9 7 MTTF = 10 / FIT = 9.41 x 10 hrs = 10747 years Chi² = Chi Squared Distribution, determined by the number of failures and confidence interval N = Total Number of units from HTRB and HTGB tests H = Duration of HTRB/HTGB testing Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C) Acceleration Factor [Af] = Exp [Ea / k (1/Tj u – 1/Tj s)] Acceleration Factor ratio list: Af 55 deg C 70 deg C 85 deg C 100 deg C 115 deg C 130 deg C 150 deg C 258 87 32 13 5.64 2.59 1 Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16 Tj u = The use junction temperature in degree (Kelvin), K = C+273.16 -5 K = Boltzmann’s constant, 8.617164 X 10 eV / K