AOS Semiconductor Product Reliability Report AO4411, rev C Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc www.aosmd.com 1 This AOS product reliability report summarizes the qualification result for AO4411. Accelerated environmental tests are performed on a specific sample size, and then followed by electrical test at end point. Review of final electrical test result confirms that AO4411 passes AOS quality and reliability requirements. The released product will be categorized by the process family and be routine monit ored for continuously improving the product quality. Table of Contents: I. II. III. IV. Product Description Package and Die information Reliability Stress Test Summary and Results Reliability Evaluation I. Product Description: The AO4411 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. Details refer to the datasheet. II. Die / Package Information: Process Package Type Lead Frame Die Attach Bond Mold Material Moisture Level AO4411 Standard sub-micron 30V P-Channel MOSFE T SO-8 Bare Cu Ag Epoxy Cu Wire Epoxy resin with silica filler Level 1 2 III. Reliability Stress Test Summary and Results Test Item Test Condition Time Point Total Sample Size Number of Failures Reference Standard HTGB Temp = 150°C , Vgs=100% of Vgsmax 168 / 500 / 1000 hours 924 pcs 0 JESD22-A108 HTRB Temp = 150°C , Vds=80% of Vdsmax 168 / 500 / 1000 hours 924 pcs 0 JESD22-A108 MSL Precondition 168hr 85°C / 85 %RH + 3 cycle reflow@260°C (MSL 1) - 4158 pcs 0 JESD22-A113 HAST 130°C , 85 %RH, 33.3 psia, Vds = 80 % of Vdsmax 96 hours 924 pcs 0 JESD22-A110 H3TRB 85°C , 85 %RH, Vds = 80 % of Vdsmax 1000 hrs 693 pcs 0 JESD22-A101 Autoclave 121°C , 29.7psia, RH=100 % 96 hours 924 pcs 0 JESD22-A102 Temperature Cycle -65°C to 150°C , air to air, 250 / 500 cycles 924 pcs 0 JESD22-A104 HTSL Temp = 150°C 1000 hrs 693 pcs 0 JESD22-A103 Note: The reliability data presents total of available generic data up to the published date. IV. Reliability Evaluation FIT rate (per billion): 1.91 MTTF = 59839 years The present ation of FIT rate for the individual product reliability is restricted by the actual burn-in sample size. Failure Rat e Determination is based on JEDE C Standard JESD 85. FIT means one failure per billion hours. 2 9 Failure Rate = Chi x 10 / [2 (N) (H) (A f)] = 1.91 9 MTTF = 10 / FIT = 59839 years Chi²= Chi Squared Distribution, determined by the number of failures and confidenc e interval N = Tot al Number of units from burn-in tests H = Duration of burn-in testing Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C) Acceleration Factor [Af] = Exp [Ea / k (1/Tj u – 1/Tj s)] Acceleration Factor ratio list: 55 deg C 70 deg C 85 deg C 100 deg C 115 deg C Af 259 87 32 13 5.64 Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16 Tj u =The use junction temperature in degree (K elvin), K = C+273.16 k = Boltzmann’s constant, 8.617164 X 10-5eV / K 130 deg C 150 deg C 2.59 1 3