http://datasheet.sii-ic.com/en/automotive_hall_ics/S57P1_S_E.pdf

S-57P1 S Series
www.sii-ic.com
FOR AUTOMOTIVE 150°C OPERATION HIGH-WITHSTAND VOLTAGE
HIGH-SPEED BIPOLAR HALL EFFECT LATCH
Rev.1.1_01
© SII Semiconductor Corporation, 2015
The S-57P1 S Series, developed by CMOS technology, is a high-accuracy Hall IC that operates with high temperature and
high-withstand voltage.
The output voltage changes when the S-57P1 S Series detects the intensity level of magnetic flux density and a polarity
change. Using the S-57P1 S Series with a magnet makes it possible to detect the rotation status in various devices.
The S-57P1 S Series includes a reverse voltage protection circuit and an output current limit circuit.
High-density mounting is possible by using the small SOT-23-3S package.
Due to its high-accuracy magnetic characteristics, the S-57P1 S Series enables the user to reduce the operational variation
in the system.
Caution
This product can be used in vehicle equipment and in-vehicle equipment. Before using the product in the
purpose, contact to SII Semiconductor Corporation is indispensable.
 Features
• Pole detection:
• Detection logic for magnetism*1:
• Output form:
• Magnetic sensitivity*1:
• Operating cycle:
• Power supply voltage range:
• Built-in regulator
• Built-in reverse voltage protection circuit
• Built-in output current limit circuit
• Operation temperature range:
• Lead-free (Sn 100%), halogen-free
• AEC-Q100 in process *2
Bipolar latch
VOUT = "L" at S pole detection
VOUT = "H" at S pole detection
Nch open-drain output
BOP = 0.5 mT typ.
BOP = 1.5 mT typ.
BOP = 2.2 mT typ.
BOP = 3.0 mT typ.
tCYCLE = 8.0 μs typ.
VDD = 2.7 V to 26.0 V
Ta = −40°C to +150°C
*1. The option can be selected.
*2. Contact our sales office for details.
 Applications
• Automobile equipment
• Home appliance
• DC brushless motor
• Housing equipment
• Industrial equipment
 Package
• SOT-23-3S
1
FOR AUTOMOTIVE 150°C OPERATION HIGH-WITHSTAND VOLTAGE HIGH-SPEED BIPOLAR HALL EFFECT LATCH
Rev.1.1_01
S-57P1 S Series
 Block Diagrams
VDD
Reverse voltage
protection circuit
OUT
Regulator
Chopping
stabilized
amplifier
Output current limit circuit
VSS
*1. Parasitic diode
Figure 1
2
*1
FOR AUTOMOTIVE 150°C OPERATION HIGH-WITHSTAND VOLTAGE HIGH-SPEED BIPOLAR HALL EFFECT LATCH
Rev.1.1_01
S-57P1 S Series
 AEC-Q100 in Process
Contact our sales office for details of AEC-Q100 reliability specification.
 Product Name Structure
1. Product name
S-57P1
N
B
x
x
S
-
M3T4
U
Environmental code
U: Lead-free (Sn 100%), halogen-free
Package name (abbreviation) and IC packing specifications*1
M3T4: SOT-23-3S, Tape
Operation temperature
S: Ta = −40°C to +150°C
Magnetic sensitivity
9: BOP = 0.5 mT typ.
0: BOP = 1.5 mT typ.
8: BOP = 2.2 mT typ.
1: BOP = 3.0 mT typ.
Detection logic for magnetism
L: VOUT = "L" at S pole detection
H: VOUT = "H" at S pole detection
Pole detection
B: Bipolar latch
Output form
N: Nch open-drain output
*1. Refer to the tape drawing.
2. Package
Table 1
Package Name
SOT-23-3S
Package Drawing Codes
Dimension
Tape
Reel
MP003-D-P-SD
MP003-D-C-SD
MP003-D-R-SD
3. Product name list
Table 2
Product Name
Output Form
Pole Detection
Detection Logic
for Magnetism
VOUT = "L" at S pole detection
VOUT = "L" at S pole detection
VOUT = "L" at S pole detection
VOUT = "L" at S pole detection
VOUT = "H" at S pole detection
VOUT = "H" at S pole detection
S-57P1NBL9S-M3T4U Nch open-drain output Bipolar latch
S-57P1NBL0S-M3T4U Nch open-drain output Bipolar latch
S-57P1NBL8S-M3T4U Nch open-drain output Bipolar latch
S-57P1NBL1S-M3T4U Nch open-drain output Bipolar latch
S-57P1NBH9S-M3T4U Nch open-drain output Bipolar latch
S-57P1NBH0S-M3T4U Nch open-drain output Bipolar latch
Remark Please contact our sales office for products other than the above.
Magnetic
Sensitivity (BOP)
0.5 mT typ.
1.5 mT typ.
2.2 mT typ.
3.0 mT typ.
0.5 mT typ.
1.5 mT typ.
3
FOR AUTOMOTIVE 150°C OPERATION HIGH-WITHSTAND VOLTAGE HIGH-SPEED BIPOLAR HALL EFFECT LATCH
Rev.1.1_01
S-57P1 S Series
 Pin Configuration
1. SOT-23-3S
Table 3
Top view
Pin No.
1
2
Symbol
Description
1
VSS
GND pin
2
VDD
Power supply pin
3
OUT
Output pin
3
Figure 2
 Absolute Maximum Ratings
Table 4
Item
Symbol
(Ta = +25°C unless otherwise specified)
Absolute Maximum Rating
Unit
Output current
IOUT
VSS − 28.0 to VSS + 28.0
20
Output voltage
VOUT
VSS − 0.3 to VSS + 28.0
V
Junction temperature
Tj
−40 to +170
°C
Operation ambient temperature
Topr
−40 to +150
°C
Storage temperature
Tstg
−40 to +170
°C
Power supply voltage
VDD
V
mA
Caution The absolute maximum ratings are rated values exceeding which the product could suffer physical
damage. These values must therefore not be exceeded under any conditions.
 Thermal Resistance Value
Table 5
Item
Remark
4
condition
Board 1
Board 2
Test environment: compliance with JEDEC STANDARD JESD51-2A
Junction-to-ambient thermal resistance*1
*1.
Symbol
θja
SOT-23-3S
Min.
Typ.
Max.
Unit
−
−
200
165
−
−
°C/W
°C/W
Refer to " Thermal Characteristics" for details of power dissipation and test board.
FOR AUTOMOTIVE 150°C OPERATION HIGH-WITHSTAND VOLTAGE HIGH-SPEED BIPOLAR HALL EFFECT LATCH
Rev.1.1_01
S-57P1 S Series
 Electrical Characteristics
Table 6
Item
Power supply voltage
Current consumption
Current consumption
during reverse connection
Output voltage
Leakage current
Operating cycle
Operating frequency
Output limit current
Start up time
(Ta = +25°C, VDD = 12.0 V, VSS = 0 V unless otherwise specified)
Test
Condition
Min.
Typ. Max.
Unit
Circuit
Symbol
Average value
2.7
−
12.0
3.0
26.0
4.0
V
mA
−
1
IDDREV VDD = −26.0 V
−0.1
−
−
mA
1
−
−
−
−
22
−
−
−
8.0
125
−
20
0.4
1
−
−
70
−
V
μA
μs
kHz
mA
μs
2
3
−
−
3
−
VDD
IDD
VOUT
ILEAK
tCYCLE
fCYCLE
IOM
tPON
−
IOUT = 10 mA
Output transistor Nch, VOUT = 26.0 V
−
−
VOUT = 12.0 V
−
5
FOR AUTOMOTIVE 150°C OPERATION HIGH-WITHSTAND VOLTAGE HIGH-SPEED BIPOLAR HALL EFFECT LATCH
Rev.1.1_01
S-57P1 S Series
 Magnetic Characteristics
1.
Product with BOP = 0.5 mT typ.
Table 7
(Ta = +25°C, VDD = 12.0 V, VSS = 0 V unless otherwise specified)
Item
Operation point*1
Release point*2
Hysteresis width*3
2.
Symbol
S pole
N pole
BOP
BRP
BHYS
Condition
−
−
BHYS = BOP − BRP
Min.
−0.5
−1.5
−
Typ.
0.5
−0.5
1.0
Max.
1.5
0.5
−
Unit
mT
mT
mT
Test Circuit
4
4
4
Product with BOP = 1.5 mT typ.
Table 8
(Ta = +25°C, VDD = 12.0 V, VSS = 0 V unless otherwise specified)
Item
Operation point*1
Release point*2
Hysteresis width*3
3.
Symbol
S pole
N pole
BOP
BRP
BHYS
Condition
−
−
BHYS = BOP − BRP
Min.
0.5
−2.5
−
Typ.
1.5
−1.5
3.0
Max.
2.5
−0.5
−
Unit
mT
mT
mT
Test Circuit
4
4
4
Product with BOP = 2.2 mT typ.
Table 9
(Ta = +25°C, VDD = 12.0 V, VSS = 0 V unless otherwise specified)
Item
Operation point*1
Release point*2
Hysteresis width*3
4.
Symbol
S pole
N pole
BOP
BRP
BHYS
Condition
−
−
BHYS = BOP − BRP
Min.
1.2
−3.2
−
Typ.
2.2
−2.2
4.4
Max.
3.2
−1.2
−
Unit
mT
mT
mT
Test Circuit
4
4
4
Product with BOP = 3.0 mT typ.
Table 10
(Ta = +25°C, VDD = 12.0 V, VSS = 0 V unless otherwise specified)
Item
Operation point*1
Release point*2
Hysteresis width*3
Symbol
S pole
N pole
BOP
BRP
BHYS
Condition
−
−
BHYS = BOP − BRP
Min.
2.0
−4.0
−
Typ.
3.0
−3.0
6.0
Max.
4.0
−2.0
−
Unit
mT
mT
mT
Test Circuit
4
4
4
*1. BOP: Operation point
BOP is the value of magnetic flux density when the output voltage (VOUT) changes after the magnetic flux density
applied to the S-57P1 S Series by the magnet (S pole) is increased (by moving the magnet closer).
VOUT retains the status until a magnetic flux density of the N pole higher than BRP is applied.
*2. BRP: Release point
BRP is the value of magnetic flux density when the output voltage (VOUT) changes after the magnetic flux density
applied to the S-57P1 S Series by the magnet (N pole) is increased (by moving the magnet closer).
VOUT retains the status until a magnetic flux density of the S pole higher than BOP is applied.
*3. BHYS: Hysteresis width
BHYS is the difference of magnetic flux density between BOP and BRP.
Remark
6
The unit of magnetic density mT can be converted by using the formula 1 mT = 10 Gauss.
FOR AUTOMOTIVE 150°C OPERATION HIGH-WITHSTAND VOLTAGE HIGH-SPEED BIPOLAR HALL EFFECT LATCH
Rev.1.1_01
S-57P1 S Series
 Test Circuits
A
VDD
R
820 Ω
S-57P1
S Series OUT
VSS
Figure 3
Test Circuit 1
VDD
S-57P1
S Series OUT
VSS
Figure 4
A
V
Test Circuit 2
VDD
S-57P1
S Series OUT
VSS
A
V
Figure 5 Test Circuit 3
VDD
R
820 Ω
S-57P1
S Series OUT
VSS
Figure 6
V
Test Circuit 4
7
FOR AUTOMOTIVE 150°C OPERATION HIGH-WITHSTAND VOLTAGE HIGH-SPEED BIPOLAR HALL EFFECT LATCH
Rev.1.1_01
S-57P1 S Series
 Standard Circuit
VDD
CIN
0.1 μF
R
820 Ω
S-57P1
S Series OUT
VSS
Figure 7
Caution The above connection diagram and constant will not guarantee successful operation. Perform
thorough evaluation using the actual application to set the constant.
8
FOR AUTOMOTIVE 150°C OPERATION HIGH-WITHSTAND VOLTAGE HIGH-SPEED BIPOLAR HALL EFFECT LATCH
Rev.1.1_01
S-57P1 S Series
 Operation
1.
Direction of applied magnetic flux
The S-57P1 S Series detects the magnetic flux density which is vertical to the marking surface.
Figure 8 shows the direction in which magnetic flux is being applied.
N
S
Marking surface
Figure 8
2.
Position of Hall sensor
Figure 9 shows the position of Hall sensor.
The center of this Hall sensor is located in the area indicated by a circle, which is in the center of a package as
described below.
The following also shows the distance (typ. value) between the marking surface and the chip surface of a package.
Top view
The center of Hall sensor,
in this φ0.3 mm
1
2
3
0.315 mm (typ.)
Figure 9
9
FOR AUTOMOTIVE 150°C OPERATION HIGH-WITHSTAND VOLTAGE HIGH-SPEED BIPOLAR HALL EFFECT LATCH
Rev.1.1_01
S-57P1 S Series
3.
Basic operation
The S-57P1 S Series changes the output voltage (VOUT) according to the level of the magnetic flux density (N pole or S
pole) and a polarity change applied by a magnet.
Definition of the magnetic field is performed every operating cycle indicated in " Electrical Characteristics".
3. 1
Product with VOUT = "L" at S pole detection
When the magnetic flux density of the S pole perpendicular to the marking surface exceeds the operation point
(BOP) after the S pole of a magnet is moved closer to the marking surface of the S-57P1 S Series, VOUT changes
from "H" to "L". When the N pole of a magnet is moved closer to the marking surface of the S-57P1 S Series and
the magnetic flux density of the N pole is higher than the release point (BRP), VOUT changes from "L" to "H". In case
of BRP < B < BOP, VOUT retains the status. Figure 10 shows the relationship between the magnetic flux density and
VOUT.
VOUT
BHYS
H
L
N pole
0
BRP
BOP
S pole
Magnetic flux density (B)
Figure 10
3. 2
Product with VOUT = "H" at S pole detection
When the magnetic flux density of the S pole perpendicular to the marking surface exceeds BOP after the S pole of a
magnet is moved closer to the marking surface of the S-57P1 S Series, VOUT changes from "L" to "H". When the
N pole of a magnet is moved closer to the marking surface of the S-57P1 S Series and the magnetic flux density of
the N pole is higher than BRP, VOUT changes from "H" to "L". In case of BRP < B < BOP, VOUT retains the status.
Figure 11 shows the relationship between the magnetic flux density and VOUT.
VOUT
BHYS
H
L
N pole
BRP
0
BOP
Magnetic flux density (B)
Figure 11
10
S pole
FOR AUTOMOTIVE 150°C OPERATION HIGH-WITHSTAND VOLTAGE HIGH-SPEED BIPOLAR HALL EFFECT LATCH
Rev.1.1_01
S-57P1 S Series
 Precautions
• If the impedance of the power supply is high, the IC may malfunction due to a supply voltage drop caused by feedthrough current. Take care with the pattern wiring to ensure that the impedance of the power supply is low.
• Note that the IC may malfunction if the power supply voltage rapidly changes. When the IC is used under the
environment where the power supply voltage rapidly changes, it is recommended to judge the output voltage of the IC
by reading it multiple times.
• Do not apply an electrostatic discharge to this IC that exceeds the performance ratings of the built-in electrostatic
protection circuit.
• Although this IC has a built-in output current limit circuit, it may suffer physical damage such as product deterioration
under the environment where the absolute maximum ratings are exceeded.
• Although this IC has a built-in reverse voltage protection circuit, it may suffer physical damage such as product
deterioration under the environment where the absolute maximum ratings are exceeded.
• The application conditions for the power supply voltage, the pull-up voltage, and the pull-up resistor should not exceed
the package power dissipation.
• Large stress on this IC may affect on the magnetic characteristics. Avoid large stress which is caused by bend and
distortion during mounting the IC on a board or handle after mounting.
• SII Semiconductor Corporation claims no responsibility for any disputes arising out of or in connection with any
infringement by products including this IC of patents owned by a third party.
11
FOR AUTOMOTIVE 150°C OPERATION HIGH-WITHSTAND VOLTAGE HIGH-SPEED BIPOLAR HALL EFFECT LATCH
Rev.1.1_01
S-57P1 S Series
 Thermal Characteristics
1.
SOT-23-3S
Tj = 170C max.
Power dissipation (PD) [W]
1.0
1. 1
Board 1
0.73 W
0.6
0.4
0.2
0
Figure 12
Board 2
0.88 W
0.8
0
50
100
150
Ambient temperature (Ta) [C]
Power Dissipation of Package (When Mounted on Board)
Board 1*1
76.2 mm
Table 11
114.3 mm
Item
Thermal resistance value (θja)
Size
Material
Number of copper foil layer
1
2
Copper foil layer
3
4
Thermal via
Specification
200°C/W
114.3 mm × 76.2 mm × t1.6 mm
FR-4
2
Land pattern and wiring for testing: t0.070 mm
−
−
74.2 mm × 74.2 mm × t0.070 mm
−
Figure 13
1. 2
Board 2*1
76.2 mm
114.3 mm
Table 12
*1.
12
Item
Thermal resistance value (θja)
Size
Material
Number of copper foil layer
1
2
Copper foil layer
3
4
Thermal via
Figure 14
The board is same in SOT-23-3, SOT-23-5 and SOT-23-6.
Specification
165°C/W
114.3 mm × 76.2 mm × t1.6 mm
FR-4
4
Land pattern and wiring for testing: t0.070 mm
74.2 mm × 74.2 mm × t0.035 mm
74.2 mm × 74.2 mm × t0.035 mm
74.2 mm × 74.2 mm × t0.070 mm
−
2.9±0.2
1
2
3
+0.1
0.16 -0.06
0.95±0.1
1.9±0.2
0.4±0.1
No. MP003-D-P-SD-1.1
TITLE
SOT233S-A-PKG Dimensions
No.
MP003-D-P-SD-1.1
ANGLE
UNIT
mm
SII Semiconductor Corporation
+0.1
ø1.5 -0
4.0±0.1
2.0±0.1
+0.25
ø1.0 -0
0.23±0.1
4.0±0.1
1.4±0.2
3.2±0.2
1
2
3
Feed direction
No. MP003-D-C-SD-1.0
TITLE
SOT233S-A-Carrier Tape
No.
MP003-D-C-SD-1.0
ANGLE
UNIT
mm
SII Semiconductor Corporation
+1.0
9.0 - 0.0
11.4±1.0
Enlarged drawing in the central part
ø13±0.2
(60°)
(60°)
No. MP003-D-R-SD-1.0
TITLE
SOT233S-A-Reel
No.
MP003-D-R-SD-1.0
ANGLE
QTY.
UNIT
3,000
mm
SII Semiconductor Corporation
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