S-57P1 S Series www.sii-ic.com FOR AUTOMOTIVE 150°C OPERATION HIGH-WITHSTAND VOLTAGE HIGH-SPEED BIPOLAR HALL EFFECT LATCH Rev.1.1_01 © SII Semiconductor Corporation, 2015 The S-57P1 S Series, developed by CMOS technology, is a high-accuracy Hall IC that operates with high temperature and high-withstand voltage. The output voltage changes when the S-57P1 S Series detects the intensity level of magnetic flux density and a polarity change. Using the S-57P1 S Series with a magnet makes it possible to detect the rotation status in various devices. The S-57P1 S Series includes a reverse voltage protection circuit and an output current limit circuit. High-density mounting is possible by using the small SOT-23-3S package. Due to its high-accuracy magnetic characteristics, the S-57P1 S Series enables the user to reduce the operational variation in the system. Caution This product can be used in vehicle equipment and in-vehicle equipment. Before using the product in the purpose, contact to SII Semiconductor Corporation is indispensable. Features • Pole detection: • Detection logic for magnetism*1: • Output form: • Magnetic sensitivity*1: • Operating cycle: • Power supply voltage range: • Built-in regulator • Built-in reverse voltage protection circuit • Built-in output current limit circuit • Operation temperature range: • Lead-free (Sn 100%), halogen-free • AEC-Q100 in process *2 Bipolar latch VOUT = "L" at S pole detection VOUT = "H" at S pole detection Nch open-drain output BOP = 0.5 mT typ. BOP = 1.5 mT typ. BOP = 2.2 mT typ. BOP = 3.0 mT typ. tCYCLE = 8.0 μs typ. VDD = 2.7 V to 26.0 V Ta = −40°C to +150°C *1. The option can be selected. *2. Contact our sales office for details. Applications • Automobile equipment • Home appliance • DC brushless motor • Housing equipment • Industrial equipment Package • SOT-23-3S 1 FOR AUTOMOTIVE 150°C OPERATION HIGH-WITHSTAND VOLTAGE HIGH-SPEED BIPOLAR HALL EFFECT LATCH Rev.1.1_01 S-57P1 S Series Block Diagrams VDD Reverse voltage protection circuit OUT Regulator Chopping stabilized amplifier Output current limit circuit VSS *1. Parasitic diode Figure 1 2 *1 FOR AUTOMOTIVE 150°C OPERATION HIGH-WITHSTAND VOLTAGE HIGH-SPEED BIPOLAR HALL EFFECT LATCH Rev.1.1_01 S-57P1 S Series AEC-Q100 in Process Contact our sales office for details of AEC-Q100 reliability specification. Product Name Structure 1. Product name S-57P1 N B x x S - M3T4 U Environmental code U: Lead-free (Sn 100%), halogen-free Package name (abbreviation) and IC packing specifications*1 M3T4: SOT-23-3S, Tape Operation temperature S: Ta = −40°C to +150°C Magnetic sensitivity 9: BOP = 0.5 mT typ. 0: BOP = 1.5 mT typ. 8: BOP = 2.2 mT typ. 1: BOP = 3.0 mT typ. Detection logic for magnetism L: VOUT = "L" at S pole detection H: VOUT = "H" at S pole detection Pole detection B: Bipolar latch Output form N: Nch open-drain output *1. Refer to the tape drawing. 2. Package Table 1 Package Name SOT-23-3S Package Drawing Codes Dimension Tape Reel MP003-D-P-SD MP003-D-C-SD MP003-D-R-SD 3. Product name list Table 2 Product Name Output Form Pole Detection Detection Logic for Magnetism VOUT = "L" at S pole detection VOUT = "L" at S pole detection VOUT = "L" at S pole detection VOUT = "L" at S pole detection VOUT = "H" at S pole detection VOUT = "H" at S pole detection S-57P1NBL9S-M3T4U Nch open-drain output Bipolar latch S-57P1NBL0S-M3T4U Nch open-drain output Bipolar latch S-57P1NBL8S-M3T4U Nch open-drain output Bipolar latch S-57P1NBL1S-M3T4U Nch open-drain output Bipolar latch S-57P1NBH9S-M3T4U Nch open-drain output Bipolar latch S-57P1NBH0S-M3T4U Nch open-drain output Bipolar latch Remark Please contact our sales office for products other than the above. Magnetic Sensitivity (BOP) 0.5 mT typ. 1.5 mT typ. 2.2 mT typ. 3.0 mT typ. 0.5 mT typ. 1.5 mT typ. 3 FOR AUTOMOTIVE 150°C OPERATION HIGH-WITHSTAND VOLTAGE HIGH-SPEED BIPOLAR HALL EFFECT LATCH Rev.1.1_01 S-57P1 S Series Pin Configuration 1. SOT-23-3S Table 3 Top view Pin No. 1 2 Symbol Description 1 VSS GND pin 2 VDD Power supply pin 3 OUT Output pin 3 Figure 2 Absolute Maximum Ratings Table 4 Item Symbol (Ta = +25°C unless otherwise specified) Absolute Maximum Rating Unit Output current IOUT VSS − 28.0 to VSS + 28.0 20 Output voltage VOUT VSS − 0.3 to VSS + 28.0 V Junction temperature Tj −40 to +170 °C Operation ambient temperature Topr −40 to +150 °C Storage temperature Tstg −40 to +170 °C Power supply voltage VDD V mA Caution The absolute maximum ratings are rated values exceeding which the product could suffer physical damage. These values must therefore not be exceeded under any conditions. Thermal Resistance Value Table 5 Item Remark 4 condition Board 1 Board 2 Test environment: compliance with JEDEC STANDARD JESD51-2A Junction-to-ambient thermal resistance*1 *1. Symbol θja SOT-23-3S Min. Typ. Max. Unit − − 200 165 − − °C/W °C/W Refer to " Thermal Characteristics" for details of power dissipation and test board. FOR AUTOMOTIVE 150°C OPERATION HIGH-WITHSTAND VOLTAGE HIGH-SPEED BIPOLAR HALL EFFECT LATCH Rev.1.1_01 S-57P1 S Series Electrical Characteristics Table 6 Item Power supply voltage Current consumption Current consumption during reverse connection Output voltage Leakage current Operating cycle Operating frequency Output limit current Start up time (Ta = +25°C, VDD = 12.0 V, VSS = 0 V unless otherwise specified) Test Condition Min. Typ. Max. Unit Circuit Symbol Average value 2.7 − 12.0 3.0 26.0 4.0 V mA − 1 IDDREV VDD = −26.0 V −0.1 − − mA 1 − − − − 22 − − − 8.0 125 − 20 0.4 1 − − 70 − V μA μs kHz mA μs 2 3 − − 3 − VDD IDD VOUT ILEAK tCYCLE fCYCLE IOM tPON − IOUT = 10 mA Output transistor Nch, VOUT = 26.0 V − − VOUT = 12.0 V − 5 FOR AUTOMOTIVE 150°C OPERATION HIGH-WITHSTAND VOLTAGE HIGH-SPEED BIPOLAR HALL EFFECT LATCH Rev.1.1_01 S-57P1 S Series Magnetic Characteristics 1. Product with BOP = 0.5 mT typ. Table 7 (Ta = +25°C, VDD = 12.0 V, VSS = 0 V unless otherwise specified) Item Operation point*1 Release point*2 Hysteresis width*3 2. Symbol S pole N pole BOP BRP BHYS Condition − − BHYS = BOP − BRP Min. −0.5 −1.5 − Typ. 0.5 −0.5 1.0 Max. 1.5 0.5 − Unit mT mT mT Test Circuit 4 4 4 Product with BOP = 1.5 mT typ. Table 8 (Ta = +25°C, VDD = 12.0 V, VSS = 0 V unless otherwise specified) Item Operation point*1 Release point*2 Hysteresis width*3 3. Symbol S pole N pole BOP BRP BHYS Condition − − BHYS = BOP − BRP Min. 0.5 −2.5 − Typ. 1.5 −1.5 3.0 Max. 2.5 −0.5 − Unit mT mT mT Test Circuit 4 4 4 Product with BOP = 2.2 mT typ. Table 9 (Ta = +25°C, VDD = 12.0 V, VSS = 0 V unless otherwise specified) Item Operation point*1 Release point*2 Hysteresis width*3 4. Symbol S pole N pole BOP BRP BHYS Condition − − BHYS = BOP − BRP Min. 1.2 −3.2 − Typ. 2.2 −2.2 4.4 Max. 3.2 −1.2 − Unit mT mT mT Test Circuit 4 4 4 Product with BOP = 3.0 mT typ. Table 10 (Ta = +25°C, VDD = 12.0 V, VSS = 0 V unless otherwise specified) Item Operation point*1 Release point*2 Hysteresis width*3 Symbol S pole N pole BOP BRP BHYS Condition − − BHYS = BOP − BRP Min. 2.0 −4.0 − Typ. 3.0 −3.0 6.0 Max. 4.0 −2.0 − Unit mT mT mT Test Circuit 4 4 4 *1. BOP: Operation point BOP is the value of magnetic flux density when the output voltage (VOUT) changes after the magnetic flux density applied to the S-57P1 S Series by the magnet (S pole) is increased (by moving the magnet closer). VOUT retains the status until a magnetic flux density of the N pole higher than BRP is applied. *2. BRP: Release point BRP is the value of magnetic flux density when the output voltage (VOUT) changes after the magnetic flux density applied to the S-57P1 S Series by the magnet (N pole) is increased (by moving the magnet closer). VOUT retains the status until a magnetic flux density of the S pole higher than BOP is applied. *3. BHYS: Hysteresis width BHYS is the difference of magnetic flux density between BOP and BRP. Remark 6 The unit of magnetic density mT can be converted by using the formula 1 mT = 10 Gauss. FOR AUTOMOTIVE 150°C OPERATION HIGH-WITHSTAND VOLTAGE HIGH-SPEED BIPOLAR HALL EFFECT LATCH Rev.1.1_01 S-57P1 S Series Test Circuits A VDD R 820 Ω S-57P1 S Series OUT VSS Figure 3 Test Circuit 1 VDD S-57P1 S Series OUT VSS Figure 4 A V Test Circuit 2 VDD S-57P1 S Series OUT VSS A V Figure 5 Test Circuit 3 VDD R 820 Ω S-57P1 S Series OUT VSS Figure 6 V Test Circuit 4 7 FOR AUTOMOTIVE 150°C OPERATION HIGH-WITHSTAND VOLTAGE HIGH-SPEED BIPOLAR HALL EFFECT LATCH Rev.1.1_01 S-57P1 S Series Standard Circuit VDD CIN 0.1 μF R 820 Ω S-57P1 S Series OUT VSS Figure 7 Caution The above connection diagram and constant will not guarantee successful operation. Perform thorough evaluation using the actual application to set the constant. 8 FOR AUTOMOTIVE 150°C OPERATION HIGH-WITHSTAND VOLTAGE HIGH-SPEED BIPOLAR HALL EFFECT LATCH Rev.1.1_01 S-57P1 S Series Operation 1. Direction of applied magnetic flux The S-57P1 S Series detects the magnetic flux density which is vertical to the marking surface. Figure 8 shows the direction in which magnetic flux is being applied. N S Marking surface Figure 8 2. Position of Hall sensor Figure 9 shows the position of Hall sensor. The center of this Hall sensor is located in the area indicated by a circle, which is in the center of a package as described below. The following also shows the distance (typ. value) between the marking surface and the chip surface of a package. Top view The center of Hall sensor, in this φ0.3 mm 1 2 3 0.315 mm (typ.) Figure 9 9 FOR AUTOMOTIVE 150°C OPERATION HIGH-WITHSTAND VOLTAGE HIGH-SPEED BIPOLAR HALL EFFECT LATCH Rev.1.1_01 S-57P1 S Series 3. Basic operation The S-57P1 S Series changes the output voltage (VOUT) according to the level of the magnetic flux density (N pole or S pole) and a polarity change applied by a magnet. Definition of the magnetic field is performed every operating cycle indicated in " Electrical Characteristics". 3. 1 Product with VOUT = "L" at S pole detection When the magnetic flux density of the S pole perpendicular to the marking surface exceeds the operation point (BOP) after the S pole of a magnet is moved closer to the marking surface of the S-57P1 S Series, VOUT changes from "H" to "L". When the N pole of a magnet is moved closer to the marking surface of the S-57P1 S Series and the magnetic flux density of the N pole is higher than the release point (BRP), VOUT changes from "L" to "H". In case of BRP < B < BOP, VOUT retains the status. Figure 10 shows the relationship between the magnetic flux density and VOUT. VOUT BHYS H L N pole 0 BRP BOP S pole Magnetic flux density (B) Figure 10 3. 2 Product with VOUT = "H" at S pole detection When the magnetic flux density of the S pole perpendicular to the marking surface exceeds BOP after the S pole of a magnet is moved closer to the marking surface of the S-57P1 S Series, VOUT changes from "L" to "H". When the N pole of a magnet is moved closer to the marking surface of the S-57P1 S Series and the magnetic flux density of the N pole is higher than BRP, VOUT changes from "H" to "L". In case of BRP < B < BOP, VOUT retains the status. Figure 11 shows the relationship between the magnetic flux density and VOUT. VOUT BHYS H L N pole BRP 0 BOP Magnetic flux density (B) Figure 11 10 S pole FOR AUTOMOTIVE 150°C OPERATION HIGH-WITHSTAND VOLTAGE HIGH-SPEED BIPOLAR HALL EFFECT LATCH Rev.1.1_01 S-57P1 S Series Precautions • If the impedance of the power supply is high, the IC may malfunction due to a supply voltage drop caused by feedthrough current. Take care with the pattern wiring to ensure that the impedance of the power supply is low. • Note that the IC may malfunction if the power supply voltage rapidly changes. When the IC is used under the environment where the power supply voltage rapidly changes, it is recommended to judge the output voltage of the IC by reading it multiple times. • Do not apply an electrostatic discharge to this IC that exceeds the performance ratings of the built-in electrostatic protection circuit. • Although this IC has a built-in output current limit circuit, it may suffer physical damage such as product deterioration under the environment where the absolute maximum ratings are exceeded. • Although this IC has a built-in reverse voltage protection circuit, it may suffer physical damage such as product deterioration under the environment where the absolute maximum ratings are exceeded. • The application conditions for the power supply voltage, the pull-up voltage, and the pull-up resistor should not exceed the package power dissipation. • Large stress on this IC may affect on the magnetic characteristics. Avoid large stress which is caused by bend and distortion during mounting the IC on a board or handle after mounting. • SII Semiconductor Corporation claims no responsibility for any disputes arising out of or in connection with any infringement by products including this IC of patents owned by a third party. 11 FOR AUTOMOTIVE 150°C OPERATION HIGH-WITHSTAND VOLTAGE HIGH-SPEED BIPOLAR HALL EFFECT LATCH Rev.1.1_01 S-57P1 S Series Thermal Characteristics 1. SOT-23-3S Tj = 170C max. Power dissipation (PD) [W] 1.0 1. 1 Board 1 0.73 W 0.6 0.4 0.2 0 Figure 12 Board 2 0.88 W 0.8 0 50 100 150 Ambient temperature (Ta) [C] Power Dissipation of Package (When Mounted on Board) Board 1*1 76.2 mm Table 11 114.3 mm Item Thermal resistance value (θja) Size Material Number of copper foil layer 1 2 Copper foil layer 3 4 Thermal via Specification 200°C/W 114.3 mm × 76.2 mm × t1.6 mm FR-4 2 Land pattern and wiring for testing: t0.070 mm − − 74.2 mm × 74.2 mm × t0.070 mm − Figure 13 1. 2 Board 2*1 76.2 mm 114.3 mm Table 12 *1. 12 Item Thermal resistance value (θja) Size Material Number of copper foil layer 1 2 Copper foil layer 3 4 Thermal via Figure 14 The board is same in SOT-23-3, SOT-23-5 and SOT-23-6. Specification 165°C/W 114.3 mm × 76.2 mm × t1.6 mm FR-4 4 Land pattern and wiring for testing: t0.070 mm 74.2 mm × 74.2 mm × t0.035 mm 74.2 mm × 74.2 mm × t0.035 mm 74.2 mm × 74.2 mm × t0.070 mm − 2.9±0.2 1 2 3 +0.1 0.16 -0.06 0.95±0.1 1.9±0.2 0.4±0.1 No. MP003-D-P-SD-1.1 TITLE SOT233S-A-PKG Dimensions No. MP003-D-P-SD-1.1 ANGLE UNIT mm SII Semiconductor Corporation +0.1 ø1.5 -0 4.0±0.1 2.0±0.1 +0.25 ø1.0 -0 0.23±0.1 4.0±0.1 1.4±0.2 3.2±0.2 1 2 3 Feed direction No. MP003-D-C-SD-1.0 TITLE SOT233S-A-Carrier Tape No. MP003-D-C-SD-1.0 ANGLE UNIT mm SII Semiconductor Corporation +1.0 9.0 - 0.0 11.4±1.0 Enlarged drawing in the central part ø13±0.2 (60°) (60°) No. MP003-D-R-SD-1.0 TITLE SOT233S-A-Reel No. MP003-D-R-SD-1.0 ANGLE QTY. UNIT 3,000 mm SII Semiconductor Corporation Disclaimers (Handling Precautions) 1. All the information described herein (product data, specifications, figures, tables, programs, algorithms and application circuit examples, etc.) is current as of publishing date of this document and is subject to change without notice. 2. The circuit examples and the usages described herein are for reference only, and do not guarantee the success of any specific mass-production design. SII Semiconductor Corporation is not responsible for damages caused by the reasons other than the products or infringement of third-party intellectual property rights and any other rights due to the use of the information described herein. 3. SII Semiconductor Corporation is not responsible for damages caused by the incorrect information described herein. 4. Take care to use the products described herein within their specified ranges. Pay special attention to the absolute maximum ratings, operation voltage range and electrical characteristics, etc. SII Semiconductor Corporation is not responsible for damages caused by failures and/or accidents, etc. that occur due to the use of products outside their specified ranges. 5. When using the products described herein, confirm their applications, and the laws and regulations of the region or country where they are used and verify suitability, safety and other factors for the intended use. 6. When exporting the products described herein, comply with the Foreign Exchange and Foreign Trade Act and all other export-related laws, and follow the required procedures. 7. The products described herein must not be used or provided (exported) for the purposes of the development of weapons of mass destruction or military use. SII Semiconductor Corporation is not responsible for any provision (export) to those whose purpose is to develop, manufacture, use or store nuclear, biological or chemical weapons, missiles, or other military use. 8. The products described herein are not designed to be used as part of any device or equipment that may affect the human body, human life, or assets (such as medical equipment, disaster prevention systems, security systems, combustion control systems, infrastructure control systems, vehicle equipment, traffic systems, in-vehicle equipment, aviation equipment, aerospace equipment, and nuclear-related equipment), excluding when specified for in-vehicle use or other uses. Do not use those products without the prior written permission of SII Semiconductor Corporation. Especially, the products described herein cannot be used for life support devices, devices implanted in the human body and devices that directly affect human life, etc. Prior consultation with our sales office is required when considering the above uses. SII Semiconductor Corporation is not responsible for damages caused by unauthorized or unspecified use of our products. 9. Semiconductor products may fail or malfunction with some probability. The user of these products should therefore take responsibility to give thorough consideration to safety design including redundancy, fire spread prevention measures, and malfunction prevention to prevent accidents causing injury or death, fires and social damage, etc. that may ensue from the products' failure or malfunction. The entire system must be sufficiently evaluated and applied on customer's own responsibility. 10. The products described herein are not designed to be radiation-proof. The necessary radiation measures should be taken in the product design by the customer depending on the intended use. 11. The products described herein do not affect human health under normal use. However, they contain chemical substances and heavy metals and should therefore not be put in the mouth. The fracture surfaces of wafers and chips may be sharp. Take care when handling these with the bare hands to prevent injuries, etc. 12. When disposing of the products described herein, comply with the laws and ordinances of the country or region where they are used. 13. The information described herein contains copyright information and know-how of SII Semiconductor Corporation. The information described herein does not convey any license under any intellectual property rights or any other rights belonging to SII Semiconductor Corporation or a third party. Reproduction or copying of the information described herein for the purpose of disclosing it to a third-party without the express permission of SII Semiconductor Corporation is strictly prohibited. 14. For more details on the information described herein, contact our sales office. 1.0-2016.01 www.sii-ic.com