Datasheet

AOZ8235
Five-line TVS Diode
General Description
Features
The AOZ8235 is a transient voltage suppressor diode
array designed to protect data lines from high transient
conditions and ESD. This state-of-the-art device utilizes
AOS leading edge Trench Vertical Structure [TVS]2 ™
technology for superior clamping performance.
 ESD protection for high-speed data lines:
This device incorporates five TVS diodes in a single
package. Due to the flexibility of the design, the package
can be configured as a four channel bidirectional TVS
array. During transient conditions, the TVS diodes direct
the transient to ground. They may be used to meet the
ESD immunity requirements of IEC 61000-4-2, Level 4
(±15 kV air, ±8 kV contact discharge).
The AOZ8235 comes in an RoHS compliant DFN
package and is rated over a -40 °C to +85 °C ambient
temperature range.
– Exceeds: IEC 61000-4-2 (ESD) ±18 kV (air),
±18 kV (contact)
– Human Body Model (HBM) ±30 kV
 Trench Vertical Structure [TVS]2 ™ based technology






used to achieve excellent ESD clamping performance
Small package saves board space
Low insertion loss
Protects five unidirectional or four bidirectional
I/O lines
Low clamping voltage
Low operating voltage: 5.0V
Green product, Pb-free
Applications
 Portable handheld devices
The very small 1.45 mm x 1.0 mm x 0.55 mm
DFN package makes it ideal for applications where
PCB space is a premium. The small size and high ESD
protection makes it ideal for protecting high speed video
and data communication interfaces.
 Keypads, data lines
 Notebook computers
 Digital cameras
 Portable GPS
 MP3 players
Typical Applications
Pin Configuration
I/O1
I/O2
I/O3
I/O4
I/O5
CH1
1
6
CH5
VN
2
5
CH4
CH2
3
4
CH3
Unidirection Protection of Five Lines
I/O1
I/O2
Top View
I/O3
I/O4
Bidirection Protection of Four Lines
Rev. 2.0 November 2014
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AOZ8235
Ordering Information
Part Number
Ambient Temperature Range
Package
Environmental
AOZ8235DI-05
-40 °C to +85 °C
DFN 1.45 x 1.0
Green Product
RoHS Compliant
AOS Green Products use reduced levels of Halogens, and are also RoHS compliant.
Please visit www.aosmd.com/media/AOSGreenPolicy.pdf for additional information.
Absolute Maximum Ratings
Exceeding the Absolute Maximum ratings may damage the device.
Parameter
Rating
VP – VN
5V
Peak Pulse Current (IPP), tP = 8/20 µs
4A
Storage Temperature (TS)
-65 °C to +150 °C
ESD Rating per IEC61000-4-2, Contact
±18 kV
Air(1)
±18 kV
Model(2)
±30 kV
ESD Rating per IEC61000-4-2,
ESD Rating per Human Body
(1)
Notes:
1. IEC 61000-4-2 discharge with CDischarge = 150 pF, RDischarge = 330 Ω.
2. Human Body Discharge per MIL-STD-883, Method 3015 CDischarge = 100 pF, RDischarge = 1.5 kΩ.
Maximum Operating Ratings
Parameter
Rating
Junction Temperature (TJ)
-40 °C to +125 °C
Electrical Characteristics
TA = 25°C unless otherwise specified.
Symbol
VRWM
VBR
Parameter
Reverse Working Voltage
Conditions
Min.
Between pin 5 and 2(3)
2(4)
Reverse Breakdown Voltage
IT = 1 mA, between pins 5 and
IR
Reverse Leakage Current
VRWM = 5 V, any I/O pin to Ground
VF
Diode Forward Voltage
IF = 10 mA, any I/O pin to Ground
VCL
Channel Clamp Voltage
Positive Transients
Negative Transient
IPP = 15 A, tp = 100 ns, any I/O pin to Ground
Channel Clamp Voltage
Positive Transients
Negative Transient
IPP = 25 A, tp = 100 ns, any I/O pin to Ground
Junction Capacitance
VR = 0 V, f = 1 MHz, any I/O pin to Ground
Cj
Typ.
Max.
Units
5.0
V
6.0
V
0.1
0.7
13.5
µA
V
12.0
-10.0
V
V
15.0
-18.0
V
V
16.0
pF
Notes:
3. The working peak reverse voltage, VRWM, should be equal to or greater than the DC or continuous peak operating voltage level.
4. VBR is measured at the pulse test current IT.
Rev. 2.0 November 2014
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AOZ8235
Typical Performance Characteristics
Clamping Voltage vs. Peak Pulse Current
Clamping Voltage vs. Current
16
20
15
18
Clamping Voltage (V)
Clamping Voltage, VCL (V)
(tperiod = 100ns, tr = 1ns)
14
13
12
11
10
9
8
(tperiod = 100ns, tr = 1ns)
16
14
12
10
7
8
6
4
2
6
0
5
10
15
20
25
30
5
10
15
20
25
30
Current (A)
Peak Pulse Current, IPP (A)
Capacitance vs. Reverse Bias
16
Capacitance (pF)
14
12
10
8
6
4
2
0
0
1
2
3
4
5
Reverse Bias (Volts)
Rev. 2.0 November 2014
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AOZ8235
Applications Information
I/O1
Device Connection for Protection of Five
Unidirectional Data Lines
I/O2
I/O3
These devices are designed to protect up to five
unidirectional data lines. The device is connected as
follows.
1. Unidirectional protection of five I/O lines is achieved
by connecting pins 1, 3, 4, 5 and 6 to the data lines.
Connect pin 2 to ground. The ground connection
should be made directly to the ground plane for best
results. The path length is kept as short as possible
to reduce the effects of parasitic inductance in the
board traces.
1
4
3
5
6
I/O4
2
Circuit Diagram
I/O5
Protection of Five Unidirectional Lines
Device Connection for Protection of Four
Bidirectional Data Lines
These devices are designed to protect up to four
bidirectional data lines. The device is connected as
follows.
1. Bidirectional protection of four I/O lines is achieved
by connecting pins 1, 3, 4, and 6 to the data lines.
Connect pin 5 to ground. The ground connection
should be made directly to the ground plane for best
results. The path length is kept as short as possible
to reduce the effects of parasitic inductance in the
board traces.
I/O1
I/O2
1
3
4
6
I/O3
5
Circuit Diagram
Circuit Board Layout Recommendations for
Suppression of ESD
I/O4
Protection of Four Bidirectional Lines
Good circuit board layout is critical for the suppression of
ESD induced transients. The following guidelines are
recommended:
 Place the TVS near the input terminals or connectors
to restrict transient coupling.
 Minimize the path length between the TVS and the
protected line.
 Minimize all conductive loops including power and
ground loops.
 The ESD transient return path to ground should be
kept as short as possible.
 Never run critical signals near board edges.
 Use ground planes whenever possible.
Rev. 2.0 November 2014
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AOZ8235
Package Dimensions, DFN 1.45 x 1.0, 6L
e
b
D
Pin #1 Identification
Chamfer 0.125 x 45°
E
L
Pin #1 Dot
by Marking
2e
Ref.
TOP VIEW
BOTTOM VIEW
A
c
A1
Dimensions in millimeters
SIDE VIEW
Symbols
A
A1
b
c
D
E
e
L
RECOMMENDED LAND PATTERN
0.30
0.50
Min.
0.50
0.00
0.20
Nom.
0.55
—
0.25
0.152 Ref.
1.40
1.45
0.95
1.00
0.50 BSC
0.33
0.38
Max.
0.60
0.05
0.30
1.50
1.05
0.43
Dimensions in inches
Symbols
A
A1
b
c
D
E
e
L
Min.
0.020
0.000
0.008
Nom. Max.
0.022 0.024
—
0.002
0.010 0.012
0.006 Ref.
0.055 0.057 0.059
0.038 0.040 0.042
0.020 BSC
0.013 0.015 0.017
0.48
0.24
1.20
0.72
0.36
0.20
UNIT: mm
Rev. 2.0 November 2014
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AOZ8235
Part Marking
AOZ8235DI-05
(DFN 1.45 x 1.0)
C W
Part Number Code
Week & Year Code
LEGAL DISCLAIMER
Alpha and Omega Semiconductor makes no representations or warranties with respect to the accuracy or
completeness of the information provided herein and takes no liabilities for the consequences of use of such
information or any product described herein. Alpha and Omega Semiconductor reserves the right to make changes
to such information at any time without further notice. This document does not constitute the grant of any intellectual
property rights or representation of non-infringement of any third party’s intellectual property rights.
LIFE SUPPORT POLICY
ALPHA AND OMEGA SEMICONDUCTOR PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body or (b) support or sustain life, and (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury of
the user.
Rev. 2.0 November 2014
2. A critical component in any component of a life
support, device, or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
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