SJPE-H3(*)

4-4 Schottky Barrier Diodes
Low IR “E Series”
●Surface-Mount
VRM
(V)
IF (AV)
(A)
Package
Axial
(Body Diameter/Lead Diameter)
Part Number
IFSM
(A)
50Hz
Single Half Sine Wave
Tj
(°C)
Tstg
(°C)
VF
(V)
max
IF
(A)
IR
(mA)
VR=VRM
max
IR(H)
(mA)
VR=VRM
max
Tj
(°C)
Rth(j-l)
Rth(j-c)
(°C/W)
Mass
(g)
30
2.0
Surface-Mount (SJP)
SJPE-H3*
40
-40 to +150
0.55
2.0
0.2
70
150(Ta)
20
0.072
40
2.0
Surface-Mount (SJP)
SJPE-H4
40
-40 to +150
0.6
2.0
0.05
20
150
20
0.072
*Under development
●Thru-Hole
VRM
(V)
IF (AV)
(A)
80
100
150
Package
Part Number
IFSM
(A)
50Hz
Single Half Sine Wave
Tj
(°C)
Tstg
(°C)
VF
(V)
max
IF
(A)
IR
(mA)
VR=VRM
max
IR(H)
(mA)
VR=VRM
max
Tj
(°C)
Rth(j-l)
Rth(j-c)
(°C/W)
Mass
(g)
20
TO-220F(Center-tap)
FMEN-2208
120
-40 to +150
0.76
10
0.2
100
150
4.0
2.1
30
TO-220F(Center-tap)
FMEN-2308
150
-40 to +150
0.765
15
0.3
150
150
4.0
2.1
10
TO-220F(Center-tap)
FMEN-210A
100
-40 to +150
0.85
5.0
0.1
50
150
4.0
2.1
15
TO-220F(Center-tap)
FMEN-215A*
100
-40 to +150
0.85
7.5
0.15
75
150
4.0
2.1
20
TO-220F(Center-tap)
FMEN-220A
120
-40 to +150
0.85
10
0.2
100
150
4.0
2.1
20
TO-3PF(Center-tap)
FMEN-420A
120
-40 to +150
0.85
10
0.2
100
150
2.0
6.5
30
TO-220F(Center-tap)
FMEN-230A
150
-40 to +150
0.85
15
0.3
150
150
4.0
2.1
30
TO-262
MPEN-230AF
150
-40 to +150
0.90
15
0.25
125
150
1.5
1.55
30
TO-3PF(Center-tap)
FMEN-430A
150
-40 to +150
0.85
15
0.3
150
150
2.0
6.5
10
TO-220F(Center-tap)
FMEN-210B
100
-40 to +150
0.92
5.0
0.1
25
150
4.0
2.1
20
TO-220F(Center-tap)
FMEN-220B
120
-40 to +150
0.92
10
0.2
50
150
4.0
2.1
20
TO-3PF(Center-tap)
FMEN-420B
120
-40 to +150
0.85
10
0.2
100
150
2.0
6.5
30
TO-220F(Center-tap)
FMEN-230B
150
-40 to +150
0.92
15
0.3
75
150(Ta)
4.0
2.1
*Under development
Low VF/Low IR Balance “J Series”
●Surface-Mount
VRM
(V)
30
IF (AV)
(A)
Package
Part Number
IFSM
(A)
50Hz
Single Half Sine Wave
Tj
(°C)
Tstg
(°C)
VF
(V)
max
IF
(A)
IR
(mA)
VR=VRM
max
IR(H)
(mA)
VR=VRM
max
Tj
(°C)
Rth(j-l)
Rth(j-c)
(°C/W)
Mass
(g)
1.0
Surface-Mount (SJP)
SJPJ-D3
30
-40 to +150
0.45
1.0
0.1
35
150
20
0.072
2.0
Surface-Mount (SJP)
SJPJ-H3*
50
-40 to +150
0.45
2.0
0.2
70
150
20
0.072
3.0
Surface-Mount (SJP)
SJPJ-L3
60
-40 to +150
0.45
3.0
0.3
150
150
20
0.072
*Under development
●Thru-Hole
VRM
(V)
30
IF (AV)
(A)
Package
Axial
(Body Diameter/Lead Diameter)
Part Number
RJ 43
IFSM
(A)
50Hz
Single Half Sine Wave
Tj
(°C)
Tstg
(°C)
VF
(V)
max
IF
(A)
IR
(mA)
VR=VRM
max
IR(H)
(mA)
VR=VRM
max
Tj
(°C)
Rth(j-l)
Rth(j-c)
(°C/W)
Mass
(g)
3.0
Axial(φ6.5/φ1.4)
50
-40 to +150
0.45
3.0
3.0
100
150
8.0
1.2
10
TO-220F(Center-tap)
FMJ-23L
100
-40 to +150
0.45
5.0
5.0
175
150(Ta)
4.0
2.1
30
TO-220F(Center-tap)
FMJ-2303
150
-40 to +150
0.48
15
15
500
150
4.0
2.1
Diodes
197
Package Type (Dimensions)
2.29 ±0.5 2.29 ±0.5
1.5±0.2
2(Common to heatsink)
3
Cathode
Anode
0.8 ±0.1
0.55 ±0.1
• No. 4 Surface-Mount (TO263)
1
3
2
a: Part Number
b: Polarity
c: Lot No.
1
1.5 max
1.5 max
1
• No. 5 Surface-Mount (TO220S)
0.16
0.7
1.15 ±0.1
0.8±0.1
2.29 ±0.5 2.29 ±0.5
1
NC
1.37
1.7 ±0.5
2.5 ±0.4
+0.1
1.3±0.4
+0.4
5.0 –0.1
4.9
0 to 0.25
0.5 ±0.2
0.8 ±0.1
0.5 ±0.2
0.05–0.05
2.15±0.2
1.15 ±0.1
a: Part Number
b: Polarity
c: Lot No.
0.55 ±0.1
1.3±0.4
c.
0 to 0.25
0.8±0.1
b.
4.9
2.5 ±0.4
c.
a.
1.2max
0.7
1.2max
b.
5.4
4.1
0.55 ±0.1
2.9
5.5 ±0.4
1.7 ±0.5
a.
5.5 ±0.4
2.6±0.2
2.9
2.3±0.4
6.5 ±0.4
5.4 ±0.4
0.16
5.4
4.1
0.55 ±0.1
1.37
2.3±0.4
6.5 ±0.4
5.4 ±0.4
4.5±0.2
• No. 3 Surface-Mount (D pack) Center-tap
5.0
• No. 2 Surface-Mount (D pack)
5.0
• No. 1 Surface-Mount (SJP)
Anode
2(Common to heatsink)
3
Cathode(Common) Anode
3
2
• No. 6 Surface-Mount (TO220S)
MPL-102S, MP2-202S, MPL-1036
10.2±0.3
4.44±0.2
4.44±0.2
(1.4)
(5)
1.3±0.1
1.2±0.2
(15°)
(1.4)
4.5±0.2
9.9±0.2
(0.4)
1.3±0.2
1.3±0.2
10.0±0.2
2.4±0.2
(R0.3)
0.86 +0.2
–0.1
2.54±0.3
(0.75)
2.54±0.1
+0.3
+0.2
0.86 –0.1
0.4±0.1
1.2±0.2
2.54±0.1
(Measured at the root)
0.8±0.1
(Measured at the root)
2.54±0.5
0.5±0.1
2.54TYP
+0.2
0.1 –0.1
2.59±0.2
1.27±0.2
A
1.34 +0.2
–0.1
1.27±0.1
c
3
+0.3
2.0±0.1
4.9±0.2
2
(1.2)
1.4±0.2
1
(1.5)
b
15.3±0.3
2.54TYP
a
0.1±0.15
0.4±0.1
3.0 – 0.5
9.2±0.2
10.0 –0.5
10.2±0.3
(3°)
(1.5)
8.6±0.3
(4.6)
9.1±0.3
10.5 +0.3
–0.5
(φ 1.5 Dp0.2)
(0.45)
(3°)
a: Part Number
b: Polarity
c: Lot No.
2.54±0.5
q
w
e
*w is common to the frame.
q
• No. 7 Surface-Mount (TO220S) Center-tap
4.44±0.2
(1.4)
+0.3
2.54±0.5
2.54±0.5
q
w
e
q
w
e
• No. 10 Axial (φ2.7/φ0.6)
5.0±0.3
0.4±0.1
a: Part Number
b: Polarity
c: Lot No.
(2.5)
2.9 ±0.1
50.0 ±1.0
(9.75)
10±0.3
13.5±0.3
15.5±0.5
9.6±0.5
2.59±0.2
φ 2.4 ±0.1
2.7±0.3
7.2±0.5
• No. 11 Axial (φ2.7/φ0.6)
3±0.5
2.0±0.5
+0.3
1.2±0.2
3.0 – 0.5
+0.2
0.86 –0.1
3.9±0.5
1.27±0.2
φ 0.57 ±0.02
5±0.3
Cathode band
0.1 –0.1
1.1±0.5
c
• No. 9 Axial (φ2.4/φ0.6)
2±0.3
+0.2
(1.5)
b
8.5±0.5
10±0.3
10.0±0.3
5.0±0.3
(4.6)
10.0 –0.5
(1.5)
8.6±0.3
a
e
1.3±0.2
(0.4)
10.2±0.3
• No. 8 Surface-Mount (SZ-10)
w
• No. 12 Axial (φ 2.7/φ 0.78)
Silicon Varistors (Symmetrical)
φ 0.78 ±0.05
φ 0.6 ±0.05
φ 0.6
Cathode band
φ 2.7 ±0.2
200
Diodes
62.3
φ 2.7±0.2
5.0 ±0.2
±0.7
5.0 ±0.2
62.3 ±1.0
5.0 ±0.2
62.3 ±0.7
Cathode band
φ 2.7 ±0.2