MOS FET FKV560S (under development) 76 ID = 100µA, VGS = 0V VGS = +20V VGS = –20V VDS = 50V, VGS = 0V VDS = 10V, ID = 250µA VDS = 10V, ID = 25A VGS = 10V, ID = 25A IGSS IDSS VTH Re (yfs) RDS (ON) Ciss Coss Crss t d (on) tr t d (off) tf VSD VDS = 10V f = 1.0MHz VGS = 0V max 50 Unit V +10 –5 100 2.0 1.0 20.0 9 2000 1000 150 ID = 25A VDD 12V RL = 0.48Ω VGS = 10V To be defined ISD = 50A, VGS = 0V 1.0 11 1.5 µA µA V S mΩ pF pF pF ns ns ns ns V 4.44±0.2 10.2±0.3 (1.4) V(BR) DSS min +0.3 Test Conditions External Dimensions TO220S 10.0 –0.5 Symbol (Ta=25ºC) Ratings typ 1.3±0.2 a 1.6 b (1.5) Electrical Characteristics 8.6±0.3 Unit V V A A W ºC ºC +0.2 0.1 –0.1 1.27±0.2 +0.3 Symbol Ratings VDSS 50 ±20 VGSS ±45 ID ±135 ID (pulse)* PD 60 (Tc=25ºC) Tch 150 Tstg –55 to +150 * PW 100µs, duty 1% 3.0 –0.5 Absolute Maximum Ratings (Ta=25ºC) +0.2 0.86 –0.1 0.4±0.1 1.2±0.2 2.54±0.5 2.54±0.5 a) Type No. b) Lot No. (Unit: mm)