SANKEN FKV560S

MOS FET FKV560S (under development)
76
ID = 100µA, VGS = 0V
VGS = +20V
VGS = –20V
VDS = 50V, VGS = 0V
VDS = 10V, ID = 250µA
VDS = 10V, ID = 25A
VGS = 10V, ID = 25A
IGSS
IDSS
VTH
Re (yfs)
RDS (ON)
Ciss
Coss
Crss
t d (on)
tr
t d (off)
tf
VSD
VDS = 10V
f = 1.0MHz
VGS = 0V
max
50
Unit
V
+10
–5
100
2.0
1.0
20.0
9
2000
1000
150
ID = 25A
VDD 12V
RL = 0.48Ω
VGS = 10V
To be
defined
ISD = 50A, VGS = 0V
1.0
11
1.5
µA
µA
V
S
mΩ
pF
pF
pF
ns
ns
ns
ns
V
4.44±0.2
10.2±0.3
(1.4)
V(BR) DSS
min
+0.3
Test Conditions
External Dimensions TO220S
10.0 –0.5
Symbol
(Ta=25ºC)
Ratings
typ
1.3±0.2
a
1.6
b
(1.5)
Electrical Characteristics
8.6±0.3
Unit
V
V
A
A
W
ºC
ºC
+0.2
0.1 –0.1
1.27±0.2
+0.3
Symbol
Ratings
VDSS
50
±20
VGSS
±45
ID
±135
ID (pulse)*
PD
60 (Tc=25ºC)
Tch
150
Tstg
–55 to +150
* PW 100µs, duty 1%
3.0 –0.5
Absolute Maximum Ratings (Ta=25ºC)
+0.2
0.86 –0.1
0.4±0.1
1.2±0.2
2.54±0.5
2.54±0.5
a) Type No.
b) Lot No.
(Unit: mm)