1N5406G

星合电子
1N5400G - 1N5408G
XINGHE ELECTRONICS
3.0A GLASS PASSIVATED RECTIFIER
DO-201AD
Features
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·
Glass Passivated Die Construction
Diffused Junction
High Current Capability and Low Forward
Voltage Drop
Surge Overload Rating to 125A Peak
Plastic Material has UL Flammability
Classification 94V-0
1.0(25.4)
MIN
XJHF
·
·
·
0.210(5.3)
0.190(4.8)
DIA
0.375(9.50)
0.285(7.20)
Mechanical Data
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·
·
·
·
·
Case: Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 1.12 grams (approx)
Mounting Position: Any
Marking: Type Number
1.0(25.4)
MIN
0.052(1.32)
0.048(1.22)
DIA
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
@ TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
1N
1N
1N
1N
1N
1N
1N
1N
1N
5400G 5401G 5402G 5403G 5404G 5405G 5406G 5407G 5408G Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
50
100
200
300
400
500
600
800
1000
V
RMS Reverse Voltage
VR(RMS)
35
70
140
210
280
350
420
580
700
V
Average Rectified Output Current
(Note 1)
@ TA = 55°C
Non-Repetitive Peak Forward Surge Current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
IO
3.0
A
IFSM
125
A
VFM
1.1
V
IRM
5.0
100
mA
Reverse Recovery Time (Note 3)
trr
2.0
ms
Typical Junction Capacitance (Note 2)
Cj
40
pF
RqJA
32
K/W
Tj, TSTG
-65 to +150
°C
Forward Voltage
Peak Reverse Current
at Rated DC Blocking Voltage
@ IF = 3.0A
@TA = 25°C
@ TA = 125°C
Typical Thermal Resistance Junction to Ambient
Operating and Storage Temperature Range
Notes:
1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
3. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A.
1
GAOMI XINGHE ELECTRONICS CO.,LTD. WWW.SDDZG.COM
Single phase
half wave, 60Hz
resistive or
inductive load
IF, INSTANTANEOUS FORWARD CURRENT (A)
IO, AVERAGE FORWARD RECTIFIED CURRENT (A)
100
4
3
2
1
0
0
25
50
75
100
125
150
175
10
1.0
0.1
0.01
0.4
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
0.8
1.0
1.2
1.4
1.6
1.8
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
200
Pulse Width = 8.3ms
single half sine-wave
Tj = 25°C
f = 1MHz
Cj, JUNCTION CAPACITANCE (pF)
IFSM, PEAK FORWARD SURGE CURRENT (A)
200
0.6
100
100
10
10
1
10
1
100
10
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Peak Forward Surge Current
IR, INSTANTANEOUS REVERSE CURRENT (µA)
100
100
Tj = 125°C
10
1.0
Tj = 25°C
0.1
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK VOLTAGE (%)
Fig. 5 Typical Reverse Characteristics
2
GAOMI XINGHE ELECTRONICS CO.,LTD. WWW.SDDZG.COM