IDT IDTQS33X253Q1

IDTQS33X253
HIGH-SPEED CMOS QUICKSWITCH MULTIWIDTH 24:6 MUX/DEMUX
INDUSTRIALTEMPERATURE RANGE
QUICKSWITCH® PRODUCTS
HIGH-SPEED CMOS
QUICKSWITCH MULTIWIDTH™
24:6 MUX/DEMUX
DESCRIPTION:
FEATURES:
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−
−
−
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Enhanced N channel FET with no inherent diode to Vcc
Bidirectional switches connect inputs to outputs
24:6 Mux/Demux switches
Zero propagation delay, zero ground bounce
Individual controls for each bank
Undershoot clamp diodes on all switch and control pins
TTL-compatible control inputs
Available in 48-pin QVSOP Package
The QS33X253 is a high-speed CMOS 24:6 (3, dual 4:1) multiplexer/
demultiplexer. The QS33X253 is a member of the MultiWidth™ family and
is functionally compatible to three of the QuickSwitch version of the 74F253,
74FCT253, and the 74ALS/AS/LS253 Dual 4:1 multiplexers. The low ON
resistance of the QS33X253 allows inputs to be connected to outputs without
adding propagation delay and without generating additional ground bounce
noise. TTL-compatible control circuitry with "Break-before-make" feature
avoids bus contention on the demux side. This part is ideal for video
switching and four way memory bank interleaving applications.
APPLICATIONS
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IDTQS33X253
Mux/Demux devices provide an order of magnitude faster speed than
equivalent logic devices.
Logic replacment
Video, audio, graphics switching, muxing
Hot-swapping, hot-docking
Voltage translation (5V to 3.3V)
The QS33X253 is characterized for operation at -40°C to +85°C.
FUNCTIONAL BLOCK DIAGRAM
S0
AB
S0
CD
S1
AB
S1
CD
EA
EC
EB
ED
I0 A
I0 C
I1 A
YA
YC
I2 A
I3 C
I0 B
I0 D
YD
I2 B
I3 B
S0
EF
S1
EF
I2 C
I3 A
I1 B
YB
I1 C
I1 D
I2 D
I3 D
EE
EF
I0 E
I1 E
YE
I2 E
I3 E
I0 F
I1 F
YF
I2 F
I3 F
INDUSTRIAL TEMPERATURE RANGE
JANUARY 2000
1
c
1999
Integrated Device Technology, Inc.
DSC-5761/-
IDTQS33X253
HIGH-SPEED CMOS QUICKSWITCH MULTIWIDTH 24:6 MUX/DEMUX
INDUSTRIALTEMPERATURE RANGE
ABSOLUTE MAXIMUM RATINGS
PIN CONFIGURATION
Symbol
VTERM(2)
Description
Supply Voltage to Ground
Max.
– 0.5 to +7
Unit
V
VTERM(3)
DC Switch Voltage VS
– 0.5 to +7
V
VTERM(3)
DC Input Voltage VIN
– 0.5 to +7
V
VAC
AC Input Voltage (pulse width ≤20ns)
-3
V
120
mA
EA
1
48
VCC
S1 AB
2
47
EB
I3 A
3
46
S0 AB
I2 A
4
45
I3 B
IOUT
DC Output Current
I1 A
5
44
I2 B
PMAX
Maximum Power Dissipation (TA = 85°C)
I0 A
6
43
I1 B
TSTG
Storage Temperature
YA
7
42
I0 B
GND
8
41
YB
EC
9
40
VCC
S1 CD
10
39
ED
I3 C
11
38
S0 CD
I2 C
12
37
I3 D
I1 C
13
36
I2 D
I0 C
14
35
I1 D
YC
15
34
I0 D
GND
16
33
YD
EE
17
32
VCC
S1 EF
18
31
EF
19
30
S0 EF
20
29
I 3F
I 2F
I3 E
I2 E
I1 E
21
28
I0 E
22
27
I 1F
YE
23
26
I 0F
GND
24
25
YF
Data Inputs
S0xx, S1xx
I
Select Inputs
Ex
I
Enable Inputs
Yx
O
Data Outputs
W
°C
CAPACITANCE
(TA = +25OC, f = 1.0MHz, VIN = 0V, VOUT = 0V)
Pins
Control Inputs
Typ.
4
Max. (1)
5
Unit
pF
Quickswitch Channels
Demux
5
7
pF
(Switch OFF)
Mux
14
16
pF
NOTE:
1. This parameter is guaranteed at characterization but not tested.
FUNCTION TABLE(1, 2)
Enable
PIN DESCRIPTION
I/O
I
.5
– 65 to +150
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of this specification is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect reliability.
2. Vcc Terminals.
3. All terminals except Vcc.
QVSOP
TOP VIEW
Pin Names
Ixx
(1)
Description
Select
Outputs
EA
H
EB
X
S1AB
X
S0AB
X
YA
Hi-Z
YB
X
Function
Disable A
X
H
X
X
X
Hi-Z
Disable B
L
L
L
L
I0A
I 0B
S1 - 0 = 0
L
L
L
H
I1A
I 1B
S1 - 0 = 1
L
L
H
L
I2A
I 2B
S1 - 0 = 2
L
L
H
H
I3A
I 3B
S1 - 0 = 3
NOTES:
1. H = HIGH Voltage Level
L = LOW Voltage Level
X = Don’t Care
Z = High-Impedence
2. This table represents the function for block “AB”.
The “CD” block nomenclature substitutes “A” for “C” and “B” for “D”.
The “EF” block nomenclature substitutes “A” for “E” and “B” for “F”.
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IDTQS33X253
HIGH-SPEED CMOS QUICKSWITCH MULTIWIDTH 24:6 MUX/DEMUX
INDUSTRIALTEMPERATURE RANGE
DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE
Following Conditions Apply Unless Otherwise Specified:
Industrial: TA = -40°C to +85°C, VCC = 5.0V ± 5%
Symbol
VIH
Parameter
Input HIGH Voltage
Test Conditions
Guaranteed Logic HIGH for Control Inputs
Min.
2
Typ.(1)
—
Max.
—
Unit
V
VIL
Input LOW Voltage
Guaranteed Logic LOW for Control Inputs
—
—
0.8
V
IIN
Input Leakage Current (Control Inputs)
0V ≤ VIN ≤ Vcc
—
—
±1
µA
IOZ
Off-State Current (Hi-Z)
0V ≤ VOUT ≤ Vcc
—
—
±1
µA
RON
Switch ON Resistance
Vcc = Min., VIN = 0V, ION = 30mA
—
7
10
Ω
RON
Switch ON Resistance
Vcc = Min., VIN = 2.4V, ION = 15mA
—
10
15
Ω
VP
Pass Voltage (2)
VIN = Vcc = 5V, IOUT = -5µA
3.7
4
4.2
V
NOTES:
1. Typical values are at VCC = 5.0V, TA = 25°C.
2. Pass voltage is guaranteed but not production tested.
TYPICAL ON RESISTANCE vs VIN AT VCC = 5V
16
R ON
14
(ohms)
12
10
8
6
4
2
0
0.0
0.5
1.0
1.5
2.0
V IN
(Volts)
3
2.5
3.0
3.5
IDTQS33X253
HIGH-SPEED CMOS QUICKSWITCH MULTIWIDTH 24:6 MUX/DEMUX
INDUSTRIALTEMPERATURE RANGE
POWER SUPPLY CHARACTERISTICS
Symbol
ICCQ
Parameter
Quiescent Power Supply Current
Test Conditions(1)
VCC = Max., VIN = GND or Vcc, f = 0
∆ICC
Power Supply Current per Control Input HIGH(2)
ICCD
Dynamic Power Supply Current per MHz(3)
Max.
9
Unit
µA
VCC = Max., VIN = 3.4V , f = 0
1.5
mA
VCC = Max., I and Y pins open
Control Input Toggling at 50% Duty Cycle
0.25
mA/MHz
NOTES:
1. For conditions shown as Min. or Max., use the appropriate values specified under DC Electrical Characteristics.
2. Per TTL driven input (VIN = 3.4V, control inputs only). I and Y pins do not contribute to ∆Icc.
3. This current applies to the control inputs only and represents the current required to switch internal capacitance at the specified frequency. The I
and Y inputs generate no significant AC or DC currents as they transition. This parameter is guaranteed but not production tested.
SWITCHING CHARACTERISTICS OVER OPERATING RANGE
TA = -40°C to +85°C, VCC = 5.0V ± 5%
CLOAD = 50pF, RLOAD = 500Ω unless otherwise noted.
Symbol
tPLH
tPHL
tPZL
tPZH
tPZL
tPZH
tPLZ
tPHZ
Parameter
Data Propagation Delay (2, 3)
In to Y
Switch Turn-On Delay
Sn to Y
Switch Turn-Off Delay
En to Y
Switch Turn-Off Delay (2)
En to Y, Sn to Y
Min. (1)
Typ.
Max.
Unit
—
—
0.25
ns
0.5
—
6.6
ns
0.5
—
6
ns
0.5
—
6
ns
NOTES:
1. Minimums guaranteed but not tested.
2. This parameter is guaranteed but not tested
3. The bus switch contributes no propagation delay other than the RC delay of the ON resistance of the switch and the load capacitance. The time
constant for the switch alone is of the order of 0.25ns for CL = 50pF. Since this time constant is much smaller than the rise and fall times of typical
driving signals, it adds very little propagation delay to the system. Propagation delay of the bus switch, when used in a system, is determined by the
driving circuit on the driving side of the switch and its interaction with the load on the driven side.
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IDTQS33X253
HIGH-SPEED CMOS QUICKSWITCH MULTIWIDTH 24:6 MUX/DEMUX
INDUSTRIALTEMPERATURE RANGE
ORDERING INFORMATION
IDTQS
XXXXX
XX
Device Type
Package
X
Process
Blank
Industrial (-40°C to +85°C)
Q1
QVSOP
33X253
High Speed CMOS Quickswitch Multiwidth 24:6
Mux/Demux
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