STW9B12B-NZ

Product Data Sheet
STW9B12B-NZ – Mid-Power LED
Achieving the best system cost in Mid Power
Mid-Power LED – 3020 Series
STW9B12B-NZ (Neutral, Warm)
RoHS
Product Brief
Description
Features and Benefits
•
This White Colored surface-mount LED
comes in standard package dimension.
Package Size : 3.0x2.0x0.6mm
•
It has a substrate made up of a molded
plastic reflector sitting on top of a lead
frame.
•
•
•
•
•
•
•
The die is attached within the reflector
cavity and the cavity is encapsulated by
silicone.
•
Thermally Enhanced Package Design
Mid Power up to 0.26W
Max. Driving Current 80mA
Compact Package Size
High Color Quality with CRI Min.90(R9>50)
RoHS compliant
Key Applications
•
•
•
•
•
The package design coupled with
careful selection of component
materials allow these products to
perform with high reliability.
Replacement lamps
Architectural
Entertainment
Commercial
Industrial
Table 1. Product Selection Table
CCT
Part Number
Color
Min.
Typ.
Max.
STW9B12B-NZ
Neutral White
3700K
4000K
4200K
STW9B12B-NZ
Warm White
2600K
3000K
3700K
Rev1.1, Dec 2, 2015
1
www.seoulsemicon.com
Product Data Sheet
STW9B12B-NZ – Mid-Power LED
Table of Contents
Index
•
Product Brief
1
•
Table of Contents
2
•
Performance Characteristics
3
•
Characteristics Graph
4
•
Color Bin Structure
9
•
Mechanical Dimensions
13
•
Recommended Solder Pad
14
•
Reflow Soldering Characteristics
15
•
Emitter Tape & Reel Packaging
16
•
Product Nomenclature
18
•
Handling of Silicone Resin for LEDs
19
•
Precaution For Use
20
•
Company Information
23
Rev1.1, Dec 2, 2015
2
www.seoulsemicon.com
Product Data Sheet
STW8B12B-NZ – Mid-Power LED
Performance Characteristics
Table 2. Characteristics, IF=60mA, Tj = 25ºC, RH30%
Value
Parameter
Symbol
Unit
Min.
Typ.
Max.
Forward Current
IF
-
60
80
mA
Forward Voltage[1]
VF
2.9
-
3.3
V
Luminous Intensity[1]
(3,700~4,200 K)
Iv
-
6.1
(18.3)
-
cd
(lm)
Luminous Intensity[1]
(2,600~3,700 K)
Iv
-
5.5
(16.5)
-
cd
(lm)
CRI [1]
Ra
90
-
-
2Θ1/2
-
120
-
Deg.
RθJ-S
-
40
-
℃/W
Viewing
Angle[2]
Thermal resistance (J to S)
[3]
ESD Sensitivity(HBM)
-
Class 2 JESD22-A114-E
Parameter
Symbol
Value
Unit
Forward Current
IF
80
mA
Power Dissipation
PD
0.264
W
Junction Temperature
Tj
125
ºC
Operating Temperature
Topr
-40 ~ + 100
ºC
Storage Temperature
Tstg
-40 ~ + 100
ºC
Table 3. Absolute Maximum Ratings
Notes :
(1) Tolerance : VF :±0.2V, IV :±7%, Ra :±2, x,y :±0.005
(2) 2Θ1/2 is the off-axis where the luminous intensity is 1/2 of the peak intensity
(3) Thermal resistance : RthJS (Junction / solder)
•
•
LED’s properties might be different from suggested values like above and below tables if
operation condition will be exceeded our parameter range. Care is to be taken that power
dissipation does not exceed the absolute maximum rating of the product.
All measurements were made under the standardized environment of Seoul Semiconductor.
Rev1.0, Oct 23, 2015
3
www.seoulsemicon.com
Product Data Sheet
STW9B12B-NZ – Mid-Power LED
Characteristics Graph
Fig 1. Color Spectrum, IF=60mA, Tj = 25℃, RH30%
1.2
Relative Radiant Power [%]
1.0
0.8
0.6
0.4
0.2
0.0
300
400
500
600
700
800
Wavelength(nm)
Fig 2. Viewing Angle Distribution, IF=60mA
0
1.01.0
30
0.80.8
0.60.6
60
0.40.4
0.20.2
0.00.0
-90
90
-60
0
-30
0.2
0.4
0.6
0.8
1.0
Rev1.1, Dec 2, 2015
4
www.seoulsemicon.com
Product Data Sheet
STW9B12B-NZ – Mid-Power LED
Characteristics Graph
Fig 3. Forward Voltage vs. Forward Current, T j=25℃
0.08
Forward Current (A)
0.06
0.04
0.02
0.00
2.6
2.8
3.0
3.2
3.4
Forward Voltage(V)
Fig 4. Forward Current vs. Relative Luminous Flux, T j=25℃
Relative Light Output
1.0
0.5
0.0
0
20
40
60
80
Forward Current(mA)
Rev1.1, Dec 2, 2015
5
www.seoulsemicon.com
Product Data Sheet
STW9B12B-NZ – Mid-Power LED
Characteristics Graph
Fig 5. Relative Light Output vs. Junction Temperature, IF=60mA
Relative Luminous Intensity
1.0
0.8
0.6
0.4
0.2
0.0
25
50
75
100
125
O
Junction temperature Tj( C)
Fig 6. Junction Temperature vs. Relative Forward Voltage, IF=60mA
Relative Forward Voltage
1.0
0.8
0.6
0.4
0.2
0.0
25
50
75
100
125
O
Junction temperature Tj( C)
Rev1.1, Dec 2, 2015
6
www.seoulsemicon.com
Product Data Sheet
STW9B12B-NZ – Mid-Power LED
Characteristics Graph
Fig 7. Chromaticity Coordinate vs. Junction Temperature, IF=60mA
(4200K~7000K)
0.432
0.428
25
y
0.424
50
0.420
75
100
125
0.416
0.412
0.408
0.462
0.464
0.466
0.468
0.470
0.472
x
Rev1.1, Dec 2, 2015
7
www.seoulsemicon.com
Product Data Sheet
STW9B12B-NZ – Mid-Power LED
Characteristics Graph
Fig 8. Maximum Forward Current vs. Ambient Temperature
0.10
Forward Current (A)
0.08
Rth(J-a) = 200 'C/W
0.06
0.04
0.02
0.00
-40
-20
0
20
40
60
80
100
120
O
Ambient Temperature ( C)
Rev1.1, Dec 2, 2015
8
www.seoulsemicon.com
Product Data Sheet
STW9B12B-NZ – Mid-Power LED
Color Bin Structure
Table 4. Bin Code description, IF=60mA
Luminous Intensity
Iv (mcd)
Part Number
Luminous Flux
Φv (lm) [1]
Color
Chromaticity
Coordinate
Typical Forward
Voltage (VF)
Bin
Code
Min.
Max.
Min.
Max.
Bin
Code
Min.
Max.
N0
5,000
5,500
15.0
16.5
Y3
2.9
3.0
N5
5,500
6,000
16.5
18.0
Z1
3.0
3.1
P0
6,000
6,500
18.0
19.5
Z2
3.1
3.2
Z3
3.2
3.3
STW9B12BNZ
Refer to
page.10
Table 5. Intensity rank distribution
Available Ranks
CCT
CIE
IV Rank
3700~4200 K
E
N0
N5
P0
3200~3700 K
F
N0
N5
P0
2900~3200 K
G
N0
N5
P0
2600~2900 K
H
N0
N5
P0
Notes :
(1) Calculated performance values are for reference only.
(2) All measurements were made under the standardized environment of Seoul Semiconductor.
(3) Seoul Semiconductor sorts the LED package according to the luminous intensity IV.
Rev1.1, Dec 2, 2015
9
www.seoulsemicon.com
Product Data Sheet
STW9B12B-NZ – Mid-Power LED
Color Bin Structure
CIE Chromaticity Diagram Tj=25℃, IF=60mA
G
H
F
E
(1) Energy Star binning applied to all 2600~4200K.
(2) Measurement Uncertainty of the Color Coordinates : ± 0.005
Rev1.1, Dec 2, 2015
10
www.seoulsemicon.com
Product Data Sheet
STW9B12B-NZ – Mid-Power LED
Color Bin Structure
<IF=60mA, Tj=25℃>
3200k
3500k
3700k
4000k
CF22
CF21
CE22
4200k
CF10
CE21
CF24
CE10
CF23
CE24
CE23
CF11
CE11
CE10
CE11
CE21
CE22
CE23
CIE X
CIE Y
CIE X
CIE Y
CIE X
CIE Y
CIE X
CIE Y
CIE X
CIE Y
0.3764
0.3713
0.3746
0.3689
0.3703
0.3726
0.3828
0.3803
0.3670
0.3578
0.3793
0.3828
0.3784
0.3841
0.3736
0.3874
0.3871
0.3959
0.3703
0.3726
0.3890
0.3887
0.3914
0.3922
0.3871
0.3959
0.4006
0.4044
0.3828
0.3803
0.3854
0.3768
0.3865
0.3762
0.3828
0.3803
0.3952
0.3880
0.3784
0.3647
CE24
CF10
CF11
CF21
CF22
CIE X
CIE Y
CIE X
CIE Y
CIE X
CIE Y
CIE X
CIE Y
CIE X
CIE Y
0.3784
0.3647
0.4006
0.3829
0.3981
0.3800
0.3996
0.4015
0.4146
0.4089
0.3828
0.3803
0.4051
0.3954
0.4040
0.3966
0.4146
0.4089
0.4299
0.4165
0.3952
0.3880
0.4159
0.4007
0.4186
0.4037
0.4082
0.3920
0.4223
0.3990
0.3898
0.3716
0.4108
0.3878
0.4116
0.3865
0.3943
0.3853
0.4082
0.3920
CF23
CF24
CIE X
CIE Y
CIE X
CIE Y
0.3943
0.3853
0.4082
0.3920
0.4082
0.3920
0.4223
0.3990
0.4017
0.3751
0.4147
0.3814
0.3889
0.3690
0.4017
0.3751
Rev1.1, Dec 2, 2015
11
www.seoulsemicon.com
Product Data Sheet
STW9B12B-NZ – Mid-Power LED
Color Bin Structure
<IF=60mA, Tj=25℃>
2600k
2700k
2900k
3000k
CH22
CH21
3200k
CG22
CG21
CH10
CG10
CH23
CH24
CG24
CG23
CH11
CG11
CG10
CG11
CG21
CG22
CG23
CIE X
CIE Y
CIE X
CIE Y
CIE X
CIE Y
CIE X
CIE Y
CIE X
CIE Y
0.4267
0.3946
0.4243
0.3922
0.4299
0.4165
0.4430
0.4212
0.4223
0.3990
0.4328
0.4079
0.4324
0.4100
0.4430
0.4212
0.4562
0.4260
0.4345
0.4033
0.4422
0.4113
0.4451
0.4145
0.4345
0.4033
0.4468
0.4077
0.4259
0.3853
0.4355
0.3977
0.4361
0.3964
0.4223
0.3990
0.4345
0.4033
0.4147
0.3814
CG24
CH10
CH11
CH21
CH22
CIE X
CIE Y
CIE X
CIE Y
CIE X
CIE Y
CIE X
CIE Y
CIE X
CIE Y
0.4345
0.4033
0.4502
0.4020
0.4477
0.3998
0.4562
0.4260
0.4687
0.4289
0.4468
0.4077
0.4576
0.4158
0.4575
0.4182
0.4687
0.4289
0.4813
0.4319
0.4373
0.3893
0.4667
0.4180
0.4697
0.4211
0.4585
0.4104
0.4703
0.4132
0.4259
0.3853
0.4588
0.4041
0.4591
0.4025
0.4468
0.4077
0.4585
0.4104
CH23
CH24
CIE X
CIE Y
CIE X
CIE Y
0.4468
0.4077
0.4585
0.4104
0.4585
0.4104
0.4703
0.4132
0.4483
0.3919
0.4593
0.3944
0.4373
0.3893
0.4483
0.3919
B24
Rev1.1, Dec 2, 2015
12
B24
www.seoulsemicon.com
Product Data Sheet
STW9B12B-NZ – Mid-Power LED
Mechanical Dimensions
Package
Marking
Side View
Top View
Bottom View
Circuit
Notes :
(1) All dimensions are in millimeters.
(2) Scale : none
(3) Undefined tolerance is ±0.2mm
Rev1.1, Dec 2, 2015
13
www.seoulsemicon.com
Product Data Sheet
STW9B12B-NZ – Mid-Power LED
Recommended Solder Pad
[Recommended Solder Pattern]
Notes :
(1) All dimensions are in millimeters.
(2) Scale : none
(3) This drawing without tolerances are for reference only
(4) Undefined tolerance is ±0.1mm
Rev1.1, Dec 2, 2015
14
www.seoulsemicon.com
Product Data Sheet
STW9B12B-NZ – Mid-Power LED
Reflow Soldering Characteristics
IPC/JEDEC J-STD-020
Profile Feature
Sn-Pb Eutectic Assembly
Pb-Free Assembly
Average ramp-up rate (Tsmax to Tp)
3° C/second max.
3° C/second max.
Preheat
- Temperature Min (Tsmin)
- Temperature Max (Tsmax)
- Time (Tsmin to Tsmax) (ts)
100 °C
150 °C
60-120 seconds
150 °C
200 °C
60-180 seconds
Time maintained above:
- Temperature (TL)
- Time (tL)
183 °C
60-150 seconds
217 °C
60-150 seconds
Peak Temperature (Tp)
215℃
260℃
Time within 5°C of actual Peak
Temperature (tp)2
10-30 seconds
20-40 seconds
Ramp-down Rate
6 °C/second max.
6 °C/second max.
Time 25°C to Peak Temperature
6 minutes max.
8 minutes max.
Caution
(1) Reflow soldering is recommended not to be done more than two times. In the case of more than
24 hours passed soldering after first, LEDs will be damaged.
(2) Repairs should not be done after the LEDs have been soldered. When repair is unavoidable,
suitable tools must be used.
(3) Die slug is to be soldered.
(4) When soldering, do not put stress on the LEDs during heating.
(5) After soldering, do not warp the circuit board.
Rev1.1, Dec 2, 2015
15
www.seoulsemicon.com
Product Data Sheet
STW9B12B-NZ – Mid-Power LED
Emitter Tape & Reel Packaging
( Tolerance: ±0.2, Unit: mm )
(1) Quantity : Max 4,000pcs/Reel
(2) Cumulative Tolerance : Cumulative Tolerance/10 pitches to be ±0.2mm
(3) Adhesion Strength of Cover Tape
Adhesion strength to be 0.1-0.7N when the cover tape is turned off from the carrier tape at the angle of
10˚ to the carrier tape.
(4) Package : P/N, Manufacturing data Code No. and Quantity to be indicated on a damp proof Package.
Rev1.1, Dec 2, 2015
16
www.seoulsemicon.com
Product Data Sheet
STW9B12B-NZ – Mid-Power LED
Emitter Tape & Reel Packaging
Reel
Aluminum Bag
Outer Box
Rev1.1, Dec 2, 2015
17
www.seoulsemicon.com
Product Data Sheet
STW9B12B-NZ – Mid-Power LED
Product Nomenclature
Table 6. Part Numbering System : X1X2X3X4X5X6X7X8-X9X10
Part Number Code
Description
Part Number
Value
X1
Company
S
X2
Top View LED series
T
TopView
X3X4
Color Specification
W9
CRI 90
X5
Package series
B
B series
X6X7
Characteristic code
12
X8
Revision
B
X9X10
Internal Code
NZ
Table 7. Lot Numbering System :Y1Y2Y3Y4Y5Y6Y7Y8Y9Y10–Y11Y12Y13Y14Y15Y16Y17
Lot Number Code
Description
Y1Y2
Year
Y3
Month
Y4Y5
Day
Y6
Top View LED series
Y7Y8Y9Y10
Mass order
Y11Y12Y13Y14Y15Y16Y17
Internal Number
Rev1.1, Dec 2, 2015
Lot Number
18
Value
www.seoulsemicon.com
Product Data Sheet
STW9B12B-NZ – Mid-Power LED
Handling of Silicone Resin for LEDs
(1) During processing, mechanical stress on the surface should be minimized as much as possible.
Sharp objects of all types should not be used to pierce the sealing compound.
(2) In general, LEDs should only be handled from the side. By the way, this also applies to LEDs
without a silicone sealant, since the surface can also become scratched.
(3) When populating boards in SMT production, there are basically no restrictions regarding the form
of the pick and place nozzle, except that mechanical pressure on the surface of the resin must be
prevented. This is assured by choosing a pick and place nozzle which is larger than the LED’s
reflector area.
(4) Silicone differs from materials conventionally used for the manufacturing of LEDs. These
conditions must be considered during the handling of such devices. Compared to standard
encapsulants, silicone is generally softer, and the surface is more likely to attract dust.
As mentioned previously, the increased sensitivity to dust requires special care during processing.
In cases where a minimal level of dirt and dust particles cannot be guaranteed, a suitable cleaning
solution must be applied to the surface after the soldering of components.
(5) SSC suggests using isopropyl alcohol for cleaning. In case other solvents are used, it must be
assured that these solvents do not dissolve the package or resin.
Ultrasonic cleaning is not recommended. Ultrasonic cleaning may cause damage to the LED.
(6) Please do not mold this product into another resin (epoxy, urethane, etc) and do not handle this.
product with acid or sulfur material in sealed space.
Rev1.1, Dec 2, 2015
19
www.seoulsemicon.com
Product Data Sheet
STW9B12B-NZ – Mid-Power LED
Precaution for Use
(1) Storage
To avoid the moisture penetration, we recommend store in a dry box with a desiccant.
The recommended storage temperature range is 5℃ to 30℃ and a maximum humidity of
RH50%.
(2) Use Precaution after Opening the Packaging
Use proper SMT techniques when the LED is to be soldered dipped as separation of the lens may
affect the light output efficiency.
Pay attention to the following:
a. Recommend conditions after opening the package
- Sealing
- Temperature : 5 ~ 30℃ Humidity : less than RH60%
b. If the package has been opened more than 4 week(MSL_2a) or the color of the desiccant
changes, components should be dried for 10-24hr at 65±5℃
(3) Do not apply mechanical force or excess vibration during the cooling process to normal
temperature after soldering.
(4) Do not rapidly cool device after soldering.
(5) Components should not be mounted on warped (non coplanar) portion of PCB.
(6) Radioactive exposure is not considered for the products listed here in.
(7) Gallium arsenide is used in some of the products listed in this publication.
These products are dangerous if they are burned or shredded in the process of disposal.
It is also dangerous to drink the liquid or inhale the gas generated by such products when
chemically disposed of.
(8) This device should not be used in any type of fluid such as water, oil, organic solvent and etc.
When washing is required, IPA (Isopropyl Alcohol) should be used.
(9) When the LEDs are in operation the maximum current should be decided after measuring
the package temperature.
(10) LEDs must be stored properly to maintain the device. If the LEDs are stored for 3 months or
more after being shipped from SSC, a sealed container with a nitrogen atmosphere should
be used for storage.
Rev1.1, Dec 2, 2015
20
www.seoulsemicon.com
Product Data Sheet
STW9B12B-NZ – Mid-Power LED
Precaution for Use
(11) The appearance and specifications of the product may be modified for improvement without
notice.
(12) Long time exposure of sunlight or occasional UV exposure will cause lens discoloration.
(13) VOCs (Volatile organic compounds) emitted from materials used in the construction of fixtures
can penetrate silicone encapsulants of LEDs and discolor when exposed to heat and photonic
energy. The result can be a significant loss of light output from the fixture. Knowledge of the
properties of the materials selected to be used in the construction of fixtures can help prevent
these issues.
(14) Attaching LEDs, do not use adhesives that outgas organic vapor.
(15) The driving circuit must be designed to allow forward voltage only when it is ON or OFF.
If the reverse voltage is applied to LED, migration can be generated resulting in LED damage.
(16) Similar to most Solid state devices;
LEDs are sensitive to Electro-Static Discharge (ESD) and Electrical Over Stress (EOS).
Below is a list of suggestions that Seoul Semiconductor purposes to minimize these effects.
a. ESD (Electro Static Discharge)
Electrostatic discharge (ESD) is the defined as the release of static electricity when two objects come
into contact. While most ESD events are considered harmless, it can be an expensive problem in
many industrial environments during production and storage. The damage from ESD to an LEDs may
cause the product to demonstrate unusual characteristics such as:
- Increase in reverse leakage current lowered turn-on voltage
- Abnormal emissions from the LED at low current
The following recommendations are suggested to help minimize the potential for an ESD event.
One or more recommended work area suggestions:
- Ionizing fan setup
- ESD table/shelf mat made of conductive materials
- ESD safe storage containers
One or more personnel suggestion options:
- Antistatic wrist-strap
- Antistatic material shoes
- Antistatic clothes
Environmental controls:
- Humidity control (ESD gets worse in a dry environment)
Rev1.1, Dec 2, 2015
21
www.seoulsemicon.com
Product Data Sheet
STW9B12B-NZ – Mid-Power LED
Precaution for Use
b. EOS (Electrical Over Stress)
Electrical Over-Stress (EOS) is defined as damage that may occur when an electronic device is
subjected to a current or voltage that is beyond the maximum specification limits of the device.
The effects from an EOS event can be noticed through product performance like:
- Changes to the performance of the LED package
(If the damage is around the bond pad area and since the package is completely encapsulated
the package may turn on but flicker show severe performance degradation.)
- Changes to the light output of the luminaire from component failure
- Components on the board not operating at determined drive power
Failure of performance from entire fixture due to changes in circuit voltage and current across total
circuit causing trickle down failures. It is impossible to predict the failure mode of every LED exposed
to electrical overstress as the failure modes have been investigated to vary, but there are some
common signs that will indicate an EOS event has occurred:
- Damaged may be noticed to the bond wires (appearing similar to a blown fuse)
- Damage to the bond pads located on the emission surface of the LED package
(shadowing can be noticed around the bond pads while viewing through a microscope)
- Anomalies noticed in the encapsulation and phosphor around the bond wires.
- This damage usually appears due to the thermal stress produced during the EOS event.
c. To help minimize the damage from an EOS event Seoul Semiconductor recommends utilizing:
- A surge protection circuit
- An appropriately rated over voltage protection device
- A current limiting device
Rev1.1, Dec 2, 2015
22
www.seoulsemicon.com
Product Data Sheet
STW9B12B-NZ – Mid-Power LED
Company Information
Published by
Seoul Semiconductor © 2013 All Rights Reserved.
Company Information
Seoul Semiconductor (SeoulSemicon.com) manufacturers and packages a wide selection of light
emitting diodes (LEDs) for the automotive, general illumination/lighting, appliance, signage and back
lighting markets. The company is the world’s fifth largest LED supplier, holding more than 10,000
patents globally, while offering a wide range of LED technology and production capacity in areas such
as “nPola”, deep UV LEDs, "Acrich", the world’s first commercially produced AC LED, and "Acrich
MJT - Multi-Junction Technology" a proprietary family of high-voltage LEDs. The company’s broad
product portfolio includes a wide array of package and device choices such as Acrich, high-brightness
LEDs, mid-power LEDs, side-view LEDs, through-hole type LED lamps, custom displays, and sensors.
The company is vertically integrated from epitaxial growth and chip manufacture in it’s fully owned
subsidiary, Seoul Viosys, through packaged LEDs and LED modules in three Seoul Semiconductor
manufacturing facilities. Seoul Viosys also manufactures a wide range of unique deep-UV
wavelength devices.
Legal Disclaimer
Information in this document is provided in connection with Seoul Semiconductor products. With
respect to any examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Seoul Semiconductor hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual
property rights of any third party. The appearance and specifications of the product can be changed
to improve the quality and/or performance without notice.
Rev1.1, Dec 2, 2015
23
www.seoulsemicon.com