Characteristics Graph

Product Data Sheet
STW9C2SB – Mid-Power LED
Achieving the best system cost in Mid/High Power
Mid-Power LED – 3030 Series
STW9C2SB (Warm)
RoHS
Product Brief
Description
Features and Benefits
•
This White Colored surface-mount LED
comes in standard package dimension.
Package Size : 3.0x3.0x0.6mm
•
It has a substrate made up of a molded
plastic reflector sitting on top of a lead
frame.
•
•
•
•
•
•
•
The die is attached within the reflector
cavity and the cavity is encapsulated by
silicone.
•
High Color Quality with CRI Min.90(R9>50)
Thermally Enhanced Package Design
Mid Power to High Power up to 1.4W
Max.Driving Current 200mA
Compact Package Size
Pb-free Reflow Soldering Application
Key Applications
•
•
•
•
The package design coupled with
careful selection of component
materials allow these products to
perform with high reliability.
Replacement lamps – Bulb, Tube
Commercial
Industrial
Residential
Table 1. Product Selection Table
CCT
Part Number
STW9C2SB
Color
Min.
Typ.
Max.
Warm White
2600K
2900K
3200K
1
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Product Data Sheet
STW9C2SB – Mid-Power LED
Table of Contents
Index
•
Product Brief
1
•
Performance Characteristics
3
•
Product Performance & Characterization Guide
4
•
Characteristics Graph
5
•
Color Bin Structure
11
•
Mechanical Dimensions
14
•
Recommended Solder Pad
15
•
Reflow Soldering Characteristic
16
•
Emitter Tape & Reel Packaging
17
•
Product Nomenclature
19
•
Handling of Silicone Resin for LEDs
20
•
Precaution For Use
21
•
Company Information
24
2
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Product Data Sheet
STW9C2SB – Mid-Power LED
Performance Characteristics
Table 2. Product Selection Guide, IF = 100mA, Tj = 25ºC, RH30%
CCT (K) [1]
Part Number
Luminous Intensity [2]
Luminous Flux [3]
CRI
IV (cd)
ФV (lm)
Ra
RANK
Typ.
3000
Min
Max
Min
Max
Min.
K21
21.0
23.0
63
69
90
K23
23.0
24.0
69
72
90
K24
24.0
26.0
72
78
90
K21
21.0
23.0
63
69
90
K23
23.0
24.0
69
72
90
K24
24.0
26.0
72
78
90
STW9C2SB
2700
Notes :
(1) Correlated Color Temperature is derived from the CIE 1931 Chromaticity diagram.
(2) Seoul Semiconductor maintains a tolerance of 7% on Intensity and power measurements.
The luminous intensity Iv was measured at the peak of the spatial pattern which may not be
aligned with the mechanical axis of the LED package.
(3) The lumen table is only for reference.
3
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Product Data Sheet
STW9C2SB – Mid-Power LED
Product Performance & Characterization Guide
Table 3. Characteristics, IF=100mA, Tj= 25ºC, RH30%
Value
Parameter
Symbol
Unit
Min.
Typ.
Max.
Forward Current
IF
-
100
-
mA
Forward Voltage
VF
6.0
-
6.4
V
100mA
-
23.0
-
cd
150mA
-
32.7
-
cd
Ra
90
-
-
2Θ1/2
-
120
-
Deg.
Thermal resistance (J to S) [3]
RθJ-S
-
10
-
℃/W
ESD Sensitivity(HBM)
-
Luminous Intensity (2700K)[1]
CRI
Iv
[1]
Viewing Angle
[2]
Class 3A JESD22-A114-E
Table 4. Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Forward Current
IF
200
mA
Power Dissipation
PD
1.44
W
Junction Temperature
Tj
125
ºC
Operating Temperature
Topr
-40~ + 85
ºC
Storage Temperature
Tstg
-40 ~ + 100
ºC
Notes :
(1) Tolerance : VF :±0.1V, IV :±7%, Ra :±2, x,y :±0.007
(2) 2Θ1/2 is the off-axis where the luminous intensity is 1/2 of the peak intensity.
(3) Thermal resistance : RthJS (Junction / solder)
•
•
LED’s properties might be different from suggested values like above and below tables if
operation condition will be exceeded our parameter range. Care is to be taken that power
dissipation does not exceed the absolute maximum rating of the product.
All measurements were made under the standardized environment of Seoul Semiconductor.
4
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Product Data Sheet
STW9C2SB – Mid-Power LED
Characteristics Graph
Fig 1. Color Spectrum, Tj = 25ºC, IF=100mA
Relative Emission Intensity (a.u)
2600~3200K
1.0
0.5
0.0
300
400
500
600
700
800
Wavelength [nm]
Fig 2. Radiant Pattern, Tj = 25ºC, IF=100mA
Relative Intensity (%)
100
80
60
40
20
0
-100
-75
-50
-25
0
25
50
75
100
Angle [Degree]
5
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Product Data Sheet
STW9C2SB – Mid-Power LED
Characteristics Graph
Fig 3. Forward Voltage vs. Forward Current, Tj = 25ºC
200
Forward Current [mA]
150
100
50
0
0
1
2
3
4
5
6
7
8
Forward Voltage [V]
Fig 4. Forward Current vs. Relative Luminous Intensity, Tj = 25ºC
2.0
Relative Luminous Intensity [a.u.]
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
20
40
60
80
100
120
140
160
180
200
Forward Current [mA]
6
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Product Data Sheet
STW9C2SB – Mid-Power LED
Characteristics Graph
Fig 5. Forward Current vs. CIE X, Y Shift , Tj = 25ºC
(2600K~3200K)
0.410
0.408
CIE Y
0.406
100mA
50mA
20mA
150mA
0.404
200mA
0.402
0.400
0.398
0.446
0.448
0.450
0.452
0.454
CIE X
7
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Product Data Sheet
STW9C2SB – Mid-Power LED
Characteristics Graph
Fig 6. Junction Temperature vs. Relative Luminous Intensity, IF=100mA
Relative Luminous Intensity [a.u.]
1.0
0.8
0.6
0.4
0.2
0.0
25
45
65
85
105
125
O
Junction Temperature Tj( C)
Fig 7. Junction Temperature vs. Relative Forward Voltage, IF=100mA
Relative Forward Voltage
1.0
0.8
0.6
0.4
0.2
0.0
25
45
65
85
105
125
O
Junction Temperature Tj( C)
8
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Product Data Sheet
STW9C2SB – Mid-Power LED
Characteristics Graph
Fig 8. Chromaticity Coordinate vs. Junction Temperature, IF=100mA
(2600K~3200K)
0.420
0.415
0.410
o
CIE Y
25 C
0.405
o
0.400
o
o
125 C
85 C
105 C
0.395
0.390
0.385
0.446
0.448
0.450
0.452
0.454
0.456
0.458
0.460
CIE X
9
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Product Data Sheet
STW9C2SB – Mid-Power LED
Characteristics Graph
Fig 9. Ambient Temperature vs. Maximum Forward Current, Tj_max = 125℃
250
Forward Current [mA]
200
150
100
50
0
0
20
40
60
80
100
O
Ambient Temperature Ta [ C]
10
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Product Data Sheet
STW9C2SB – Mid-Power LED
Color Bin Structure
Table 5. Bin Code description, Tj=25℃, IF=100mA
Luminous
Intensity (cd) [2]
Typical Forward Voltage (V)
Color Chromaticity
Coordinate
Part Number
STW9C2SB
Bin
Code
Min.
Max.
K21
21.0
23.0
K23
23.0
24.0
K24
24.0
26.0
Bin
Code
Min.
Max.
Z60
6.0
6.2
Z62
6.2
6.4
Refer to page.12~13
Table 6. Intensity rank distribution
Available ranks
CCT
CIE
IV Rank
2900 ~ 3200K
G
K21
K23
K24
2600 - 2900K
H
K21
K23
K24
*Notes :
All measurements were made under the standardized environment of Seoul Semiconductor.
In order to ensure availability, single color rank will not be orderable.
11
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Product Data Sheet
STW9C2SB – Mid-Power LED
Color Bin Structure
CIE Chromaticity Diagram (Warm white), Tj=25℃, IF=100mA
0.43
2900K
3000K
3200K
0.42
G41
G31
G21
G11
G42
CIE Y
0.41
G32
G22
G12
G43
0.40
G23
G33
G13
0.39
G14
G24
G44
G34
0.38
0.41
0.42
0.43
0.44
0.45
0.46
CIE X
G11
G21
G31
G41
CIE X
CIE Y
CIE X
CIE Y
CIE X
CIE Y
CIE X
CIE Y
0.4299
0.4165
0.4364
0.4188
0.4430
0.4212
0.4496
0.4236
0.4261
0.4077
0.4324
0.4099
0.4387
0.4122
0.4451
0.4145
0.4324
0.4100
0.4387
0.4122
0.4451
0.4145
0.4514
0.4168
0.4189
0.4430
0.4212
0.4496
0.4236
0.4562
0.4365
G12
G22
G32
0.4260
G42
CIE X
CIE Y
CIE X
CIE Y
CIE X
CIE Y
CIE X
CIE Y
0.4261
0.4077
0.4324
0.4100
0.4387
0.4122
0.4451
0.4145
0.4223
0.3990
0.4284
0.4011
0.4345
0.4033
0.4406
0.4055
0.4284
0.4011
0.4345
0.4033
0.4406
0.4055
0.4468
0.4077
0.4324
0.4100
0.4387
0.4122
0.4451
0.4145
0.4515
0.4168
G13
G23
G33
G43
CIE X
CIE Y
CIE X
CIE Y
CIE X
CIE Y
CIE X
CIE Y
0.4223
0.3990
0.4284
0.4011
0.4345
0.4033
0.4406
0.4055
0.4185
0.3902
0.4243
0.3922
0.4302
0.3943
0.4361
0.3964
0.4243
0.3922
0.4302
0.3943
0.4361
0.3964
0.4420
0.3985
0.4284
0.4011
0.4345
0.4033
0.4406
0.4055
0.4468
0.4077
CIE X
CIE Y
CIE X
CIE Y
CIE X
CIE Y
CIE X
CIE Y
0.4243
0.3922
0.4302
0.3943
0.4302
0.3943
0.4361
0.3964
0.4203
0.3834
0.4259
0.3853
0.4259
0.3853
0.4316
0.3873
0.4147
0.3814
0.4203
0.3834
0.4316
0.3873
0.4373
0.3893
0.4185
0.3902
0.4243
0.3922
0.4361
0.3964
0.4420
0.3985
G14
G24
G34
12
G44
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Product Data Sheet
STW9C2SB – Mid-Power LED
Color Bin Structure
CIE Chromaticity Diagram (Warm white), Tj=25℃, IF=100mA
0.44
0.43
2900K
CIE Y
H33
H23
H13
0.40
H14
H24
H34
H41
H42
H32
H22
H12
0.41
H31
H21
H11
0.42
2600K
2700K
H43
H44
0.39
0.38
0.43
0.44
0.45
0.46
0.47
0.48
CIE X
H11
H21
H31
H41
CIE X
CIE Y
CIE X
CIE Y
CIE X
CIE Y
CIE X
CIE Y
0.4562
0.4260
0.4625
0.4275
0.4687
0.4289
0.4750
0.4304
0.4515
0.4168
0.4575
0.4182
0.4636
0.4197
0.4697
0.4211
0.4575
0.4182
0.4636
0.4197
0.4697
0.4211
0.4758
0.4225
0.4275
0.4687
0.4289
0.4750
0.4304
0.4810
0.4625
H12
H22
H32
0.4319
H42
CIE X
CIE Y
CIE X
CIE Y
CIE X
CIE Y
CIE X
CIE Y
0.4515
0.4168
0.4575
0.4182
0.4636
0.4197
0.4697
0.4211
0.4468
0.4077
0.4526
0.4090
0.4585
0.4104
0.4644
0.4118
0.4526
0.4090
0.4585
0.4104
0.4644
0.4118
0.4703
0.4132
0.4575
0.4182
0.4636
0.4197
0.4697
0.4211
0.4758
0.4225
H13
H23
H33
H43
CIE X
CIE Y
CIE X
CIE Y
CIE X
CIE Y
CIE X
CIE Y
0.4468
0.4077
0.4526
0.4090
0.4585
0.4104
0.4644
0.4118
0.4420
0.3985
0.4477
0.3998
0.4534
0.4012
0.4591
0.4025
0.4477
0.3998
0.4534
0.4012
0.4591
0.4025
0.4648
0.4038
0.4526
0.4090
0.4585
0.4104
0.4644
0.4118
0.4703
0.4132
CIE X
CIE Y
CIE X
CIE Y
CIE X
CIE Y
CIE X
CIE Y
0.4420
0.3985
0.4477
0.3998
0.4534
0.4012
0.4591
0.4025
0.4373
0.3893
0.4428
0.3906
0.4483
0.3919
0.4538
0.3932
0.4428
0.3906
0.4483
0.3919
0.4538
0.3932
0.4593
0.3944
0.4477
0.3998
0.4534
0.4012
0.4591
0.4025
0.4648
0.4038
H14
H24
H34
13
H44
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Product Data Sheet
STW9C2SB – Mid-Power LED
Mechanical Dimensions
Top View
Bottom View
Cathode
Anode (+)
Circuit
Side View
Cathode
1
Anode
2
ESD Protection Device
(1) All dimensions are in millimeters.
(2) Scale : none
(3) Undefined tolerance is ±0.2mm
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Product Data Sheet
STW9C2SB – Mid-Power LED
Recommended Solder Pad
Notes :
(1) All dimensions are in millimeters.
(2) Scale : none
(3) This drawing without tolerances are for reference only
(4) Undefined tolerance is ±0.1mm
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Product Data Sheet
STW9C2SB – Mid-Power LED
Reflow Soldering Characteristics
IPC/JEDEC J-STD-020
Table 7.
Profile Feature
Sn-Pb Eutectic Assembly
Pb-Free Assembly
Average ramp-up rate (Tsmax to Tp)
3° C/second max.
3° C/second max.
Preheat
- Temperature Min (Tsmin)
- Temperature Max (Tsmax)
- Time (Tsmin to Tsmax) (ts)
100 °C
150 °C
60-120 seconds
150 °C
200 °C
60-180 seconds
Time maintained above:
- Temperature (TL)
- Time (tL)
183 °C
60-150 seconds
217 °C
60-150 seconds
Peak Temperature (Tp)
215℃
260℃
Time within 5°C of actual Peak
Temperature (tp)2
10-30 seconds
20-40 seconds
Ramp-down Rate
6 °C/second max.
6 °C/second max.
Time 25°C to Peak Temperature
6 minutes max.
8 minutes max.
Caution
(1) Reflow soldering is recommended not to be done more than two times. In the case of more than
24 hours passed soldering after first, LEDs will be damaged.
(2) Repairs should not be done after the LEDs have been soldered. When repair is unavoidable,
suitable tools must be used.
(3) Die slug is to be soldered.
(4) When soldering, do not put stress on the LEDs during heating.
(5) After soldering, do not warp the circuit board.
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Product Data Sheet
STW9C2SB – Mid-Power LED
Emitter Tape & Reel Packing
Anode (+)
( Tolerance: ±0.2, Unit: mm )
(1) Quantity : 4,500pcs/Reel
(2) Cumulative Tolerance : Cumulative Tolerance/10 pitches to be ±0.2mm
(3) Adhesion Strength of Cover Tape
Adhesion strength to be 0.1-0.7N when the cover tape is turned off from the carrier tape
at the angle of 10˚ to the carrier tape.
(4) Package : P/N, Manufacturing data Code No. and Quantity to be indicated on a damp proof Package.
17
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Product Data Sheet
STW9C2SB – Mid-Power LED
Emitter Tape & Reel Packing
Reel
Aluminum Bag
Outer Box
18
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Product Data Sheet
STW9C2SB – Mid-Power LED
Product Nomenclature
Table 7. Part Numbering System : X1X2X3X4X5X6X7X8
Part Number Code
Description
Part Number
Value
X1
Company
S
X2
Top View LED series
T
X3X4
Color Specification
W9
CRI 90
X5
Package series
C
C series
X6X7
Characteristic code
2S
X8
Revision
B
Table 8. Lot Numbering System :Y1Y2Y3Y4Y5Y6Y7Y8Y9Y10–Y11Y12Y13Y14Y15Y16Y17
Lot Number Code
Description
Lot Number
Y1Y2
Year
Y3
Month
Y4Y5
Day
Y6
Top View LED series
Y7Y8Y9Y10
Mass order
Y11Y12Y13Y14Y15Y16Y17
Internal Number
19
Value
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Product Data Sheet
STW9C2SB – Mid-Power LED
Handling of Silicone Resin for LEDs
(1) During processing, mechanical stress on the surface should be minimized as much as possible.
Sharp objects of all types should not be used to pierce the sealing compound.
(2) In general, LEDs should only be handled from the side. By the way, this also applies to LEDs
without a silicone sealant, since the surface can also become scratched.
(3) When populating boards in SMT production, there are basically no restrictions regarding the form
of the pick and place nozzle, except that mechanical pressure on the surface of the resin must be
prevented. This is assured by choosing a pick and place nozzle which is larger than the LED’s
reflector area.
(4) Silicone differs from materials conventionally used for the manufacturing of LEDs. These
conditions must be considered during the handling of such devices. Compared to standard
encapsulants, silicone is generally softer, and the surface is more likely to attract dust.
As mentioned previously, the increased sensitivity to dust requires special care during processing.
In cases where a minimal level of dirt and dust particles cannot be guaranteed, a suitable cleaning
solution must be applied to the surface after the soldering of components.
(5) SSC suggests using isopropyl alcohol for cleaning. In case other solvents are used, it must be
assured that these solvents do not dissolve the package or resin.
Ultrasonic cleaning is not recommended. Ultrasonic cleaning may cause damage to the LED.
(6) Please do not mold this product into another resin (epoxy, urethane, etc) and do not handle this.
product with acid or sulfur material in sealed space.
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Product Data Sheet
STW9C2SB – Mid-Power LED
Precaution for Use
(1) Storage
To avoid the moisture penetration, we recommend store in a dry box with a desiccant.
The recommended storage temperature range is 5℃ to 30℃ and a maximum humidity of
RH50%.
(2) Use Precaution after Opening the Packaging
Use proper SMT techniques when the LED is to be soldered dipped as separation of the lens may
affect the light output efficiency.
Pay attention to the following:
a. Recommend conditions after opening the package
- Sealing
- Temperature : 5 ~ 40℃ Humidity : less than RH30%
b. If the package has been opened more than 4 week(MSL_2a) or the color of the desiccant
changes, components should be dried for 10-12hr at 60±5℃
(3) Do not apply mechanical force or excess vibration during the cooling process to normal
temperature after soldering.
(4) Do not rapidly cool device after soldering.
(5) Components should not be mounted on warped (non coplanar) portion of PCB.
(6) Radioactive exposure is not considered for the products listed here in.
(7) Gallium arsenide is used in some of the products listed in this publication.
These products are dangerous if they are burned or shredded in the process of disposal.
It is also dangerous to drink the liquid or inhale the gas generated by such products when
chemically disposed of.
(8) This device should not be used in any type of fluid such as water, oil, organic solvent and etc.
When washing is required, IPA (Isopropyl Alcohol) should be used.
(9) When the LEDs are in operation the maximum current should be decided after measuring
the package temperature.
(10) LEDs must be stored properly to maintain the device. If the LEDs are stored for 3 months or
more after being shipped from SSC, a sealed container with a nitrogen atmosphere should
be used for storage.
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Product Data Sheet
STW9C2SB – Mid-Power LED
Precaution for Use
(11) The appearance and specifications of the product may be modified for improvement without
notice.
(12) Long time exposure of sunlight or occasional UV exposure will cause lens discoloration.
(13) VOCs (Volatile organic compounds) emitted from materials used in the construction of fixtures
can penetrate silicone encapsulants of LEDs and discolor when exposed to heat and photonic
energy. The result can be a significant loss of light output from the fixture. Knowledge of the
properties of the materials selected to be used in the construction of fixtures can help prevent
these issues.
(14) Attaching LEDs, do not use adhesives that outgas organic vapor.
(15) The driving circuit must be designed to allow forward voltage only when it is ON or OFF.
If the reverse voltage is applied to LED, migration can be generated resulting in LED damage.
(16) Similar to most Solid state devices;
LEDs are sensitive to Electro-Static Discharge (ESD) and Electrical Over Stress (EOS).
Below is a list of suggestions that Seoul Semiconductor purposes to minimize these effects.
a. ESD (Electro Static Discharge)
Electrostatic discharge (ESD) is the defined as the release of static electricity when two objects come
into contact. While most ESD events are considered harmless, it can be an expensive problem in
many industrial environments during production and storage. The damage from ESD to an LEDs may
cause the product to demonstrate unusual characteristics such as:
- Increase in reverse leakage current lowered turn-on voltage
- Abnormal emissions from the LED at low current
The following recommendations are suggested to help minimize the potential for an ESD event.
One or more recommended work area suggestions:
- Ionizing fan setup
- ESD table/shelf mat made of conductive materials
- ESD safe storage containers
One or more personnel suggestion options:
- Antistatic wrist-strap
- Antistatic material shoes
- Antistatic clothes
Environmental controls:
- Humidity control (ESD gets worse in a dry environment)
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Product Data Sheet
STW9C2SB – Mid-Power LED
Precaution for Use
b. EOS (Electrical Over Stress)
Electrical Over-Stress (EOS) is defined as damage that may occur when an electronic device is
subjected to a current or voltage that is beyond the maximum specification limits of the device.
The effects from an EOS event can be noticed through product performance like:
- Changes to the performance of the LED package
(If the damage is around the bond pad area and since the package is completely encapsulated
the package may turn on but flicker show severe performance degradation.)
- Changes to the light output of the luminaire from component failure
- Components on the board not operating at determined drive power
Failure of performance from entire fixture due to changes in circuit voltage and current across total
circuit causing trickle down failures. It is impossible to predict the failure mode of every LED exposed
to electrical overstress as the failure modes have been investigated to vary, but there are some
common signs that will indicate an EOS event has occurred:
- Damaged may be noticed to the bond wires (appearing similar to a blown fuse)
- Damage to the bond pads located on the emission surface of the LED package
(shadowing can be noticed around the bond pads while viewing through a microscope)
- Anomalies noticed in the encapsulation and phosphor around the bond wires
- This damage usually appears due to the thermal stress produced during the EOS event
c. To help minimize the damage from an EOS event Seoul Semiconductor recommends utilizing:
- A surge protection circuit
- An appropriately rated over voltage protection device
- A current limiting device
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Product Data Sheet
STW9C2SB – Mid-Power LED
Company Information
Published by
Seoul Semiconductor © 2013 All Rights Reserved.
Company Information
Seoul Semiconductor (www.SeoulSemicon.com) manufacturers and packages a wide selection of
light emitting diodes (LEDs) for the automotive, general illumination/lighting, Home appliance, signage
and back lighting markets. The company is the world’s fifth largest LED supplier, holding more than
10,000 patents globally, while offering a wide range of LED technology and production capacity in
areas such as “nPola”, "Acrich", the world’s first commercially produced AC LED, and "Acrich MJT Multi-Junction Technology" a proprietary family of high-voltage LEDs.
The company’s broad product portfolio includes a wide array of package and device choices such as
Acrich and Acirch2, high-brightness LEDs, mid-power LEDs, side-view LEDs, and through-hole type
LEDs as well as custom modules, displays, and sensors.
Legal Disclaimer
Information in this document is provided in connection with Seoul Semiconductor products. With
respect to any examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Seoul Semiconductor hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual
property rights of any third party. The appearance and specifications of the product can be changed
to improve the quality and/or performance without notice.
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