WSAD92-02N Product Description 20A,200V Ultrafast Dual Diode Features � Ultrafast recovery time � Low forward voltage drop � Low leakage current � High reliability by planer design � Maximum Junction Temperature Range(175℃) C A2 A1 General Description Winsemi's WSAD92-02N is the state of the are Ultra fast Recovery rectifiers designed with optimized performance of forward voltage drop and ultra fast recovery time .The planar structure and the platinum doped life time,control guarantee the best overall performance,ruggedness and reliability characteristics. Applications � Switching power Supplies � Uninterruptable Power Supplies � Power Switching circuits � General Purpose Absolute Maximum Ratings Symbol Parameter Value Units VRRM Peak Repetitive Reverse voltage 200 V IF(AV) Average Out Current Square wave,duty=1/2,Tc=115℃ 20 A IFSM Repetitive Peak Surge Current 100 A -55-~175 ℃ TSTG,TJ Operating Junction Temperature & Storage Temperature Electeical Characteristics (Tc=25℃ unless otherwise noted) Value Symbol VF IRRM trr Rth(J-C) Parameter Test Conditions Units Min Typ Max IF=20A - - 1.15 V IF=10A,Tc=125℃ - - 0.8 V VR=200V - 5 15 µA VR=200V,Tc=150℃ - - 4 mA IF=20A,dlF/dt=100µs - - 30 ns - - 1.5 ℃/W Forward Voltage Dorp Reverse Current Reverse Recovery Time Thermal Resistance WT-D005-Rev.A0 Mar.2014 WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS 0314 WSAD92-02N Product Description 20A,200V Ultrafast Dual Diode Typical performance Curves 100 Reverse Current-I R(µA) T J=175°C 10 10 150°C 125°C 1 100°C 0 .1 25°C 0 .0 1 0 .0 0 1 T J=175°C 0 50 100 150 200 250 Reverse Voltage-V R(V) T J=125°C Fig.2 Reverse Characteristics T J=25°C 15 RMS Limit Average Power Loss (Watts) Instantaneous Forward Current-I F (A) 100 1 12 9 D = 0 .0 1 D = 0 .0 2 D = 0 .0 5 D = 0 .1 D = 0 .2 D = 0 .5 DC 6 3 0 0 0 .1 0 0 .4 0 .8 1 .2 1 .6 Forward Voltage Drop-V F M (V) 2 3 6 9 12 15 Average Forward Current-I F(AV ) (A) Fig.3 Forward Power Dissipation Fig.1 Forward Characteristics 101 [°C/W] 1 0 0 1 0 -1 1 0 -3 1 0 -2 1 0 -1 100 101 102 t[sec.] Fig.4 Transient Thermal Impedance WIN SEM I M ICROELECTRON ICS www.winsemi.com WIN SEM I M ICROELECTRON ICS Tel : +86-755-8250 6288 WIN SEM I M ICROELECTRON ICS Fax : +86-755-8250 6299 WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS 2/6 WSAD92-02N Product Description 20A,200V Ultrafast Dual Diode 300 170 D C 160 100 I FSM[A] Allwable Case Temperature(°C) 180 150 Square wave (D=0.50) Rated Vr appllied 50 30 140 see note(1) 10 130 0 3 6 9 12 1 15 3 5 10 30 time(at 50Hz) Average Forward Current-I F (AV ) (A ) Fig.6 Surge Capability Fig.5 Case Temperature vs Out Current Junction Capacitance-C T (pF) 1000 T J =25°C 100 10 1 10 100 Reverse Voltage-V R(V) 1000 Fig.7 Junction Capacitance Characteristics (1) Formula used:Tc=TJ-(Pd+PdREV)×Rthjc; Pd=Forward Power Loss=IF(AV)×VFM@(IF(AV)/D） (see Fig.3) PdREV=Inverse Power Loss=VR1×IR(1-D); IR@VR1=rated VR WIN SEM I M ICROELECTRON ICS www.winsemi.com WIN SEM I M ICROELECTRON ICS Tel : +86-755-8250 6288 WIN SEM I M ICROELECTRON ICS Fax : +86-755-8250 6299 WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS 3/6 WSAD92-02N Product Description 20A,200V Ultrafast Dual Diode Reverse Recovery Circuit V R=200V 0 .0 1 Ω L=70µH D .U .T di F/dt ADJUST D IRFP250 G S se Recovery Paramet er Test Circuit Fig.8 Rever Revers Paramete 3 trr IF tb ta 0 Q rr 4 2 IR R M 0.5I R R M di(rec)M/dt 5 0.75IR R M 1 diF /dt 1.di F/dt-Rate of change of current though zero crossing 2.I R R M -Peak reverse recovery current 3.trr-Reverse recovery time measured from zero crossing point of negative going I Fto point where a line passing through 0.75 I RRM and 0.50 I RRM extrapolated to zero current 4.Qrr-Area under curve defined by trr and IR R M Qrr=trr IX RRM 2 5.di(rec)M/dt-Peak rate of change of current during tb portion of trr se Recovery Waveform and Definitions Fig.9 Rever Revers WIN SEM I M ICROELECTRON ICS www.winsemi.com WIN SEM I M ICROELECTRON ICS Tel : +86-755-8250 6288 WIN SEM I M ICROELECTRON ICS Fax : +86-755-8250 6299 WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS 4/6 WSAD92-02N Product Description 20A,200V Ultrafast Dual Diode TO-3P N Package Dimension U n it:m m A E F 符 号 symbol M IX MAX A 3 .8 4. 2 B 2. 10 2 . 30 B1 1. 90 2 . 10 b 1 .0 0 1 . 20 D P c c B D 1 9 .3 0 1 9 .7 E 1 4 .9 1 5 .5 e 5 . 45 ( TYP ) F 1 . 50( T Y P ) L 1 4 .0 1 5 .0 P 3. 45 3 . 85 L B1 0 . 50( T Y P ) b e WIN SEM I M ICROELECTRON ICS www.winsemi.com e WIN SEM I M ICROELECTRON ICS Tel : +86-755-8250 6288 WIN SEM I M ICROELECTRON ICS Fax : +86-755-8250 6299 WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS 5/6 WSAD92-02N Product Description 20A,200V Ultrafast Dual Diode NOTE: 1.We strongly recommend customers check carefully on the trademark when buying our product, if there is any question, please don't be hesitate to contact us. 2.Please do not exceed the absolute maximum ratings of the device when circuit designing. 3.Winsemi Microelectronics Co., Ltd reserved the right to make changes in this specification sheet and is subject to change without prior notice. CONTACT: Winsemi Microelectronics Co., Ltd. ADD:Futian District, ShenZhen Tian An Cyber Tech Plaza two East Wing 1002 Post Code : 518040 Tel : +86-755-8250 6288 FAX : +86-755-8250 6299 Web Site : www.winsemi.com WIN SEM I M ICROELECTRON ICS www.winsemi.com WIN SEM I M ICROELECTRON ICS Tel : +86-755-8250 6288 WIN SEM I M ICROELECTRON ICS Fax : +86-755-8250 6299 WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS 6/6