SII200N12

SII200N12
NPT IGBT Modules
Dimensions in mm (1mm = 0.0394")
TC = 25oC, unless otherwise specified
Absolute Maximum Ratings
Symbol
VCES
IC
ICRM
VGES
Ptot
TVj,(Tstg)
Visol
Conditions
o
TC= 25(80) C
TC= 25(80)oC, tP =1ms
_ Tstg
TOPERATION <
AC, 1min
Values
Units
1200
V
290(200)
580(400)
_
+20
A
A
1400
_ 40...+125(150)
RthJC
2500
_
< 0.09
RthJCD
_ 0.18
<
V
W
o
C
V
K/W
Sirectifier
R
SII200N12
NPT IGBT Modules
TC = 25oC, unless otherwise specified
Electeical Characteristics
Symbol
Conditions
Static Characteristics
VGE(th)
VGE = VCE, IC =8mA
ICES
VGE = 0; VCE = 1200V; Tj = 25(125)oC
min.
typ.
max.
Units
4.5
5.5
3(12)
6.5
4
V
mA
2.5(3.1)
400
3(3.7)
nA
V
IGES
VGE = 20V, VCE = 0
VCE(sat)
IC =200A; VGE = 15V; Tj = 25(125)oC; chip level
AC Characteristics
Cies
under following conditions
Coes
VGE = 0, VCE = 25V, f = 1MHz
Cres
gfs
VCE=20V, IC=200A
Switching Characteristics
td(on)
VCC = 600V, IC = 200A
tr
RGon = RGoff =4.7 , Tj = 125oC
td(off)
VGE = ± 15V
tf
FWD
13
2
1
nF
S
108
under following conditions:
VF
IF = 200A, VGE = 0V, Tj = 25(125)oC
trr
IF=200A, VR= _600V,VGE=0V,di/dt=_2000A/us,Tj = 125oC
_
IF = 200A, VGE = 0V, VR= 600V
Qrr
_
di/dt= 2000A/us, Tj = 25(125)oC
110
80
550
80
220
160
800
120
2(1.8)
2.5
ns
0.5
V
us
12(36)
uC
Mechanical Data
Ms
Mt
w
to heatsink M6
to terminals M5
3
2.5
5
5
325
Nm
Nm
g
Sirectifier
R
SII200N12
NPT IGBT Modules
Power dissipation
Ptot = ƒ(TC)
parameter: Tj ≤ 150 °C
Safe operating area
IC = ƒ(VCE)
parameter: D = 0, TC = 25°C , Tj ≤ 150 °C
10 3
1500
t = 49.0µs
p
W
1300
Ptot
A
1200
100 µs
IC
1100
10 2
1000
900
800
1 ms
700
600
10 1
500
400
10 ms
300
200
100
0
0
20
40
60
80
100
120
°C
10 0
0
10
160
10
1
10
DC 3
10
2
TC
V
VCE
Collector current
IC = ƒ(TC)
parameter: VGE ≥ 15 V , Tj ≤ 150 °C
Transient thermal impedance
Zth JC = ƒ(tp)
parameter: D = tp / T
IGBT
10 0
300
A
K/W
260
IC
240
ZthJC
10 -1
220
200
10 -2
180
160
D = 0.50
140
10 -3
120
0.20
0.10
100
0.05
80
10
60
0.02
-4
single pulse
0.01
40
20
0
0
20
40
60
80
100
120
°C
TC
160
10 -5
-5
10
10
-4
10
-3
10
-2
10
-1
s 10
0
tp
Sirectifier
R
SII200N12
NPT IGBT Modules
T yp. output c harac teris tic s
T yp. output c harac teris tic s
I C = f (V C E )
I C = f (V C E )
parameter: tp = 80 µs , T j = 25 °C
parameter: tp = 80 µs , T j = 125 °C
400
A
IC
300
400
A
17V
15V
13V
11V
9V
7V
IC
300
250
250
200
200
150
150
100
100
50
50
0
17V
15V
13V
11V
9V
7V
0
0
1
2
3
V
5
VC E
0
1
2
3
V
5
VCE
T yp. trans fer c harac teris tic s
I C = f (V G E )
parameter: tp = 80 µs , V C E = 20 V
400
A
IC
300
250
200
150
100
50
0
0
2
4
6
8
10
V
14
VGE
Sirectifier
R
SII200N12
NPT IGBT Modules
T yp. c apac itanc es
Typ. gate charge
VGE = ƒ(QGate)
parameter: IC puls = 200 A
C = f (V C E )
parameter: V G E = 0 V , f = 1 MHz
10 2
20
V
nF
VGE
16
C
600 V
14
800 V
C is s
10 1
12
10
C os s
8
10 0
C rs s
6
4
2
0
0
200
400
600
800
1000
nC
10 -1
0
1400
5
10
15
20
25
30
QGate
V
VCE
40
R evers e bias ed s afe operating area
S hort c irc uit s afe operating area
I C puls = f(V C E ) , T j = 150°C
parameter: V G E = 15 V
I C s c = f(V C E ) , T j = 150°C
parameter: V G E = ± 15 V , tS C ≤ 10 µs , L < 25 nH
2.5
12
IC puls /I C
IC sc/IC
8
1.5
6
1.0
4
0.5
2
0.0
0
200
400
600
800
1000 1200
V 1600
VC E
0
0
200
400
600
800 1000 1200
V 1600
VC E
Sirectifier
R
SII200N12
NPT IGBT Modules
T yp. s witc hing time
T yp. s witc hing time
I = f (IC ) , inductive load , T j = 125°C
par.: V C E = 600 V , V G E = ± 15 V , R G = 4.7 Ω
t = f (R G ) , inductive load , T j = 125°C
par.: V C E = 600 V , V G E = ± 15 V , I C = 200 A
10 4
10 4
ns
ns
t
tdoff
t
10 3
10 3
tdoff
tdon
tr
tdon
tr
10 2
10 2
tf
tf
10 1
0
100
200
300
A
10 1
0
500
10
20
30
40
IC
Ω
60
RG
T yp. s witc hing los s es
T yp. s witc hing los s es
E = f (IC ) , inductive load , T j = 125°C
E = f (R G ) , inductive load , T j = 125°C
par.: V C E = 600 V , V G E = ± 15 V , R G = 4.7 Ω
par.: V C E = 600V , V G E = ± 15 V , I C = 200 A
100
100
E on
E on
mWs
E
mWs
80
E
80
70
70
60
60
50
50
E off
40
40
30
30
20
20
10
10
0
0
100
200
300
A
500
IC
0
0
E off
10
20
30
40
Ω
60
RG
Sirectifier
R
SII200N12
NPT IGBT Modules
F orward c harac teris tic s of fas t rec overy
Transient thermal impedance
Zth JC = ƒ(tp)
parameter: D = tp / T
revers e diode IF = f(V F )
parameter: T j
10 0
400
K/W
A
IF
Diode
ZthJC
300
10 -1
250
T j=125°C
T j=25°C
200
10 -2
D = 0.50
0.20
150
0.10
0.05
10 -3
100
0.02
single pulse
0.01
50
0
0.0
0.5
1.0
1.5
2.0
V
3.0
VF
10 -4
-5
10
10
-4
10
-3
10
-2
10
-1
s 10
0
tp
Sirectifier
R