SII200N12 NPT IGBT Modules Dimensions in mm (1mm = 0.0394") TC = 25oC, unless otherwise specified Absolute Maximum Ratings Symbol VCES IC ICRM VGES Ptot TVj,(Tstg) Visol Conditions o TC= 25(80) C TC= 25(80)oC, tP =1ms _ Tstg TOPERATION < AC, 1min Values Units 1200 V 290(200) 580(400) _ +20 A A 1400 _ 40...+125(150) RthJC 2500 _ < 0.09 RthJCD _ 0.18 < V W o C V K/W Sirectifier R SII200N12 NPT IGBT Modules TC = 25oC, unless otherwise specified Electeical Characteristics Symbol Conditions Static Characteristics VGE(th) VGE = VCE, IC =8mA ICES VGE = 0; VCE = 1200V; Tj = 25(125)oC min. typ. max. Units 4.5 5.5 3(12) 6.5 4 V mA 2.5(3.1) 400 3(3.7) nA V IGES VGE = 20V, VCE = 0 VCE(sat) IC =200A; VGE = 15V; Tj = 25(125)oC; chip level AC Characteristics Cies under following conditions Coes VGE = 0, VCE = 25V, f = 1MHz Cres gfs VCE=20V, IC=200A Switching Characteristics td(on) VCC = 600V, IC = 200A tr RGon = RGoff =4.7 , Tj = 125oC td(off) VGE = ± 15V tf FWD 13 2 1 nF S 108 under following conditions: VF IF = 200A, VGE = 0V, Tj = 25(125)oC trr IF=200A, VR= _600V,VGE=0V,di/dt=_2000A/us,Tj = 125oC _ IF = 200A, VGE = 0V, VR= 600V Qrr _ di/dt= 2000A/us, Tj = 25(125)oC 110 80 550 80 220 160 800 120 2(1.8) 2.5 ns 0.5 V us 12(36) uC Mechanical Data Ms Mt w to heatsink M6 to terminals M5 3 2.5 5 5 325 Nm Nm g Sirectifier R SII200N12 NPT IGBT Modules Power dissipation Ptot = ƒ(TC) parameter: Tj ≤ 150 °C Safe operating area IC = ƒ(VCE) parameter: D = 0, TC = 25°C , Tj ≤ 150 °C 10 3 1500 t = 49.0µs p W 1300 Ptot A 1200 100 µs IC 1100 10 2 1000 900 800 1 ms 700 600 10 1 500 400 10 ms 300 200 100 0 0 20 40 60 80 100 120 °C 10 0 0 10 160 10 1 10 DC 3 10 2 TC V VCE Collector current IC = ƒ(TC) parameter: VGE ≥ 15 V , Tj ≤ 150 °C Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T IGBT 10 0 300 A K/W 260 IC 240 ZthJC 10 -1 220 200 10 -2 180 160 D = 0.50 140 10 -3 120 0.20 0.10 100 0.05 80 10 60 0.02 -4 single pulse 0.01 40 20 0 0 20 40 60 80 100 120 °C TC 160 10 -5 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 tp Sirectifier R SII200N12 NPT IGBT Modules T yp. output c harac teris tic s T yp. output c harac teris tic s I C = f (V C E ) I C = f (V C E ) parameter: tp = 80 µs , T j = 25 °C parameter: tp = 80 µs , T j = 125 °C 400 A IC 300 400 A 17V 15V 13V 11V 9V 7V IC 300 250 250 200 200 150 150 100 100 50 50 0 17V 15V 13V 11V 9V 7V 0 0 1 2 3 V 5 VC E 0 1 2 3 V 5 VCE T yp. trans fer c harac teris tic s I C = f (V G E ) parameter: tp = 80 µs , V C E = 20 V 400 A IC 300 250 200 150 100 50 0 0 2 4 6 8 10 V 14 VGE Sirectifier R SII200N12 NPT IGBT Modules T yp. c apac itanc es Typ. gate charge VGE = ƒ(QGate) parameter: IC puls = 200 A C = f (V C E ) parameter: V G E = 0 V , f = 1 MHz 10 2 20 V nF VGE 16 C 600 V 14 800 V C is s 10 1 12 10 C os s 8 10 0 C rs s 6 4 2 0 0 200 400 600 800 1000 nC 10 -1 0 1400 5 10 15 20 25 30 QGate V VCE 40 R evers e bias ed s afe operating area S hort c irc uit s afe operating area I C puls = f(V C E ) , T j = 150°C parameter: V G E = 15 V I C s c = f(V C E ) , T j = 150°C parameter: V G E = ± 15 V , tS C ≤ 10 µs , L < 25 nH 2.5 12 IC puls /I C IC sc/IC 8 1.5 6 1.0 4 0.5 2 0.0 0 200 400 600 800 1000 1200 V 1600 VC E 0 0 200 400 600 800 1000 1200 V 1600 VC E Sirectifier R SII200N12 NPT IGBT Modules T yp. s witc hing time T yp. s witc hing time I = f (IC ) , inductive load , T j = 125°C par.: V C E = 600 V , V G E = ± 15 V , R G = 4.7 Ω t = f (R G ) , inductive load , T j = 125°C par.: V C E = 600 V , V G E = ± 15 V , I C = 200 A 10 4 10 4 ns ns t tdoff t 10 3 10 3 tdoff tdon tr tdon tr 10 2 10 2 tf tf 10 1 0 100 200 300 A 10 1 0 500 10 20 30 40 IC Ω 60 RG T yp. s witc hing los s es T yp. s witc hing los s es E = f (IC ) , inductive load , T j = 125°C E = f (R G ) , inductive load , T j = 125°C par.: V C E = 600 V , V G E = ± 15 V , R G = 4.7 Ω par.: V C E = 600V , V G E = ± 15 V , I C = 200 A 100 100 E on E on mWs E mWs 80 E 80 70 70 60 60 50 50 E off 40 40 30 30 20 20 10 10 0 0 100 200 300 A 500 IC 0 0 E off 10 20 30 40 Ω 60 RG Sirectifier R SII200N12 NPT IGBT Modules F orward c harac teris tic s of fas t rec overy Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T revers e diode IF = f(V F ) parameter: T j 10 0 400 K/W A IF Diode ZthJC 300 10 -1 250 T j=125°C T j=25°C 200 10 -2 D = 0.50 0.20 150 0.10 0.05 10 -3 100 0.02 single pulse 0.01 50 0 0.0 0.5 1.0 1.5 2.0 V 3.0 VF 10 -4 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 tp Sirectifier R