TPA6100A2D www.ti.com SLOS269B – JUNE 2000 – REVISED SEPTEMBER 2004 50-mW ULTRALOW VOLTAGE STEREO HEADPHONE AUDIO POWER AMPLIFIER FEATURES • • • • • • • • • (1) 50-mW Stereo Output Low Supply Current . . . 0.75 mA Low Shutdown Current . . . 50 nA Pin Compatible With LM4881 and TPA102 Pop Reduction Circuitry Internal Midrail Generation Thermal and Short-Circuit Protection Surface-Mount Packaging – MSOP and SOIC 1.6-V to 3.6-V Supply Voltage Range D PACKAGE (TOP VIEW) BYPASS GND SHUTDOWN IN2– (1) 1 8 2 7 3 6 4 5 IN1– VO1 VDD VO2 DGK PACKAGE (TOP VIEW) BYPASS GND SHUTDOWN IN2– 1 8 2 7 3 6 4 5 IN1– VO1 VDD VO2 The polarity of the SHUTDOWN pin is reversed. DESCRIPTION The TPA6100A2D is a stereo audio power amplifier packaged in either an 8-pin SOIC package or an 8-pin MSOP package capable of delivering 50 mW of continuous RMS power per channel into 16-Ω loads. Amplifier gain is externally configured by a means of three resistors per input channel and does not require external compensation for settings of 1 to 10. The TPA6100A2D is optimized for battery applications because of its low supply current, shutdown current, and THD+N. To obtain the low-supply voltage range, the TPA6100A2D biases BYPASS to VDD/4. A resistor with a resistance equal to RF must be added from the inputs to ground to allow the output to be biased at VDD/2. When driving a 16-Ω load with 45-mW output power from 3.3 V, THD+N is 0.04% at 1 kHz, and less than 0.2% across the audio band of 20 Hz to 20 kHz. For 28 mW into 32-Ω loads, the THD+N is reduced to less than 0.03% at 1 kHz, and is less than 0.2% across the audio band of 20 Hz to 20 kHz. TYPICAL APPLICATION CIRCUIT VDD RF Audio Input 6 VDD CS VDD/4 RI 8 IN 1− 1 BYPASS 4 IN 2− R CI VO1 − + 7 CC CB Audio Input RI R CI VO2 − + 5 CC From Shutdown Control Circuit 3 SHUTDOWN Bias Control 2 RF Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2000–2004, Texas Instruments Incorporated TPA6100A2D www.ti.com SLOS269B – JUNE 2000 – REVISED SEPTEMBER 2004 These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. AVAILABLE OPTIONS PACKAGED DEVICE TA SMALL OUTLINE (D) MSOP(DGK) MSOP SYMBOLIZATION TPA6100A2D TPA6100A2DGK AJL –40°C to 85°C Terminal Functions TERMINAL NAME I/O NO. DESCRIPTION BYPASS 1 I Tap to voltage divider for internal mid-supply bias supply. BYPASS is set at VDD/4. Connect to a 0.1-µF to 1-µF low-ESR capacitor for best performance. GND 2 I GND is the ground connection. IN1- 8 I IN1- is the inverting input for channel 1. IN2- 4 I IN2- is the inverting input for channel 2. SHUTDOWN 3 I Active-low input. When held low, the device is placed in a low supply current mode. VDD 6 I VDD is the supply voltage terminal. VO1 7 O VO1 is the audio output for channel 1. VO2 5 O VO2 is the audio output for channel 2. ABSOLUTE MAXIMUM RATINGS over operating free-air temperature range (unless otherwise noted) (1) UNIT VDD Supply voltage VI Input voltage 4V –0.3 V to VDD + 0.3 V Continuous total power dissipation Internally limited TJ Operating junction temperature range –40°C to 150°C Tstg Storage temperature range –65°C to 150°C Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds (1) 260°C Stresses beyond thoselisted under "absolute maximum ratings” may cause permanent damage to thedevice. These are stress ratings only, and functional operation of the deviceat these or any other conditions beyond those indicated under "recommendedoperating conditions” is not implied. Exposure to absolute-maximum-ratedconditions for extended periods may affect devicereliability. DISSIPATION RATING TABLE PACKAGE TA ≤ 25°C POWER RATING DERATING FACTOR ABOVE TA = 25°C TA = 70°C POWER RATING TA = 85°C POWER RATING D 710 mW 5.68 mW/°C 454 mW 369 mW DGK 469 mW 3.75 mW/°C 300 mW 244 mW RECOMMENDED OPERATING CONDITIONS MIN MAX VDD Supply voltage 1.6 3.6 V TA Operating free-air temperature –40 85 °C VIH High-level input voltage SHUTDOWN VIL Low-level input voltage SHUTDOWN 2 0.6 x VDD 0.25 x VDD UNIT V TPA6100A2D www.ti.com SLOS269B – JUNE 2000 – REVISED SEPTEMBER 2004 DC ELECTRICAL CHARACTERISTICS at TA = 25°C, VDD = 3.6 V (Unless otherwise noted) PARAMETER TEST CONDITIONS VOO Output offset voltage AV = 2 V/V PSRR Power supply rejection ratio VDD = 3.0 V to 3.6 V IDD Supply current SHUTDOWN = 3.6 V IDD(SD) Supply current in SHUTDOWN mode SHUTDOWN = 0 V |IIH| High-level input current (SHUTDOWN) VDD = 3.6 V, |IIL| Low-level input current (SHUTDOWN) VDD = 3.6 V, ZI Input impedance (IN1-, IN2-) MIN TYP MAX 5 UNIT 40 mV 0.75 2.0 mA 50 250 nA VI = VDD 1 µA VI = 0 V 1 72 dB >1 µA MΩ AC OPERATING CHARACTERISTICS VDD = 3.3 V, TA = 25°C, RL = 16 Ω PARAMETER TEST CONDITIONS MIN TYP MAX UNIT PO Output power (each channel) THD ≤ 0.1%, f = 1 kHz THD+N Total harmonic distortion + noise PO = 45 mW, 20 Hz–20 kHz 0.2% BOM Maximum output power BW G = 1, THD < 0.5% > 20 kHz kSVR Supply ripple rejection f = 1 kHz 52 dB SNR Signal-to-noise ratio PO = 50 mW 90 dB Vn Noise output voltage (no noise-weighting filter) 28 µV(rms) 50 mW AC OPERATING CHARACTERISTICS VDD = 3.3 V, TA = 25°C, RL = 32 Ω PARAMETER TEST CONDITIONS MIN TYP MAX UNIT PO Output power (each channel) THD ≤ 0.1%, f = 1 kHz THD+N Total harmonic distortion + noise PO = 30 mW, 20 Hz–20 kHz 0.2% BOM Maximum output power BW G = 1, THD < 0.2% > 20 kHz kSVR Supply ripple rejection f = 1 kHz 52 dB SNR Signal-to-noise ratio PO = 35 mW 91 dB Vn Noise output voltage (no noise-weighting filter) 28 µV(rms) 35 mW 3 TPA6100A2D www.ti.com SLOS269B – JUNE 2000 – REVISED SEPTEMBER 2004 DC ELECTRICAL CHARACTERISTICS at TA = 25°C, VDD = 1.6 V (Unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT 5 40 mV VOO Output offset voltage AV = 2 V/V PSRR Power supply rejection ratio VDD = 1.5 V to 1.7 V 80 IDD Supply current SHUTDOWN = 1.6 V 1.2 1.5 mA IDD(SD) Supply current in SHUTDOWN mode SHUTDOWN = 0 V 50 250 nA |IIH| High-level input current (SHUTDOWN) VDD = 1.6 V, VI= VDD 1 µA |IIL| Low-level input current (SHUTDOWN) VDD = 1.6 V, VI= 0 V 1 ZI Input impedance (IN1-, IN2-) dB >1 µA MΩ AC OPERATING CHARACTERISTICS VDD = 1.6 V, TA = 25°C, RL = 16 Ω PARAMETER TEST CONDITIONS MIN TYP MAX 9.5 UNIT PO Output power (each channel) THD≤ 0.1%, f = 1 kHz THD+N Total harmonic distortion + noise PO = 9.5 mW, 20 Hz–20 kHz 0.4% mW BOM Maximum output power BW G = 0 dB, THD < 0.4% > 20 kHz kSVR Supply ripple rejection f = 1 kHz 53 dB SNR Signal-to-noise ratio PO = 9.5 mW 86 dB Vn Noise output voltage (no noise-weighting filter) 18 µV(rms) AC OPERATING CHARACTERISTICS VDD = 1.6 V, TA = 25°C, RL = 32 Ω PARAMETER TEST CONDITIONS MIN TYP UNIT PO Output power (each channel) THD≤ 0.1%, f = 1 kHz THD+N Total harmonic distortion + noise PO = 6.5 mW, 20 Hz–20 kHz 0.3% BOM Maximum output power BW G = 0 dB, THD < 0.3% > 20 kHz kSVR Supply ripple rejection f = 1 kHz 53 dB SNR Signal-to-noise ratio PO = 7.1 mW 88 dB Vn Noise output voltage (no noise-weighting filter) 18 µV(rms) 4 7.1 MAX mW TPA6100A2D www.ti.com SLOS269B – JUNE 2000 – REVISED SEPTEMBER 2004 APPLICATION INFORMATION GAIN SETTING RESISTORS, RF, RI,and R The voltage gain for the TPA6100A2D is set by resistors RF and RI according to Equation 1. Gain RF RI or Gain (dB) 20 log RF RI (1) Given that the TPA6100A2D is an MOS amplifier, the input impedance is high. Consequently, input leakage currents are not generally a concern, although noise in the circuit increases as the value of RF increases. In addition, a certain range of RF values is required for proper start-up operation of the amplifier. Taken together, it is recommended that the effective impedance seen by the inverting node of the amplifier be set between 5 kΩ and 20 kΩ. The effective impedance is calculated in Equation 2. R FR I Effective Impedance RF RI (2) As an example, consider an input resistance of 20 kΩ and a feedback resistor of 20 kΩ. The gain of the amplifier would be –1 and the effective impedance at the inverting terminal would be 10 kΩ, which is within the recommended range. For high-performance applications, metal film resistors are recommended because they tend to have lower noise levels than carbon resistors. For values of RF above 50 kΩ, the amplifier tends to become unstable due to a pole formed from RF and the inherent input capacitance of the MOS input structure. For this reason, a small compensation capacitor of approximately 5 pF should be placed in parallel with RF. In effect, this creates a low-pass filter network with the cutoff frequency defined in Equation 3. 1 fc 2 R F CF (3) For example, if RF is 100 kΩ and CF is 5 pF, then fc is 318 kHz, which is well outside the audio range. For maximum signal swing and output power at low supply voltages like 1.6 V to 3.3 V, BYPASS is biased to VDD/4. However, to allow the output to be biased at VDD/2, a resistor, R, equal to RF must be placed from the negative input to ground. INPUT CAPACITOR, CI In the typical application, an input capacitor, CI, is required to allow the amplifier to bias the input signal to the proper dc level for optimum operation. In this case, CI and RI form a high-pass filter with the corner frequency determined in Equation 4. 1 fc 2 R I CI (4) The value of CI is important to consider, as it directly affects the bass (low-frequency) performance of the circuit. Consider the example where RI is 20 kΩ and the specification calls for a flat bass response down to 20 Hz. Equation 4 is reconfigured as Equation 5. 1 CI 2 R I f c (5) In this example, CI is 0.4 µF, so one would likely choose a value in the range of 0.47 µF to 1 µF. A further consideration for this capacitor is the leakage path from the input source through the input network (RI, CI) and the feedback resistor (RF) to the load. This leakage current creates a dc offset voltage at the input to the amplifier that reduces useful headroom, especially in high-gain applications (>10). For this reason a low-leakage tantalum or ceramic capacitor is the best choice. When polarized capacitors are used, the positive side of the capacitor should face the amplifier input in most applications, as the dc level there is held at VDD/4, which is likely higher than the source dc level. It is important to confirm the capacitor polarity in the application. 5 TPA6100A2D www.ti.com SLOS269B – JUNE 2000 – REVISED SEPTEMBER 2004 APPLICATION INFORMATION (continued) POWER SUPPLY DECOUPLING, CS The TPA6100A2D is a high-performance CMOS audio amplifier that requires adequate power supply decoupling to ensure that the output total harmonic distortion (THD) is as low as possible. Power supply decoupling also prevents oscillations for long lead lengths between the amplifier and the speaker. The optimum decoupling is achieved by using two capacitors of different types that target different types of noise on the power supply leads. For higher frequency transients, spikes, or digital hash on the line, a good low equivalent-series-resistance (ESR) ceramic capacitor, typically 0.1 µF, placed as close as possible to the device VDD lead, works best. For filtering lower frequency noise signals, a larger aluminum electrolytic capacitor of 10 µF or greater placed near the power amplifier is recommended. MIDRAIL BYPASS CAPACITOR, CB The midrail bypass capacitor (CB) serves several important functions. During start-up, CB determines the rate at which the amplifier starts up. This helps to push the start-up pop noise into the subaudible range (so low it can not be heard). The second function is to reduce noise produced by the power supply caused by coupling into the output drive signal. This noise is from the midrail generation circuit internal to the amplifier. The capacitor is fed from a 55-kΩ source inside the amplifier. To keep the start-up pop as low as possible, the relationship shown in Equation 6 should be maintained. 1 1 C B 55 kΩ C I R I (6) As an example, consider a circuit where CB is 1 µF, CI is 1 µF, and RI is 20 kΩ. Inserting these values into Equation 6 results in: 18.18 ≤ 50 which satisfies the rule. Bypass capacitor (CB) values of 0.47-µF to 1-µF ceramic or tantalum low-ESR capacitors are recommended for the best THD and noise performance. OUTPUT COUPLING CAPACITOR, CC In the typical single-supply, single-ended (SE) configuration, an output coupling capacitor (CC) is required to block the dc bias at the output of the amplifier, thus preventing dc currents in the load. As with the input coupling capacitor, the output coupling capacitor and impedance of the load form a high-pass filter governed by Equation 7. 1 fc 2 R L CC (7) The main disadvantage, from a performance standpoint, is that the typically small load impedances drive the low-frequency corner higher. Large values of CC are required to pass low frequencies into the load. Consider the example where a CC of 68 µF is chosen and loads vary from 32 Ω to 47 kΩ. Table 1 summarizes the frequency response characteristics of each configuration. Table 1. Common Load Impedances vs Low Frequency Output Characteristics in SE Mode RL CC LOWEST FREQUENCY 32 Ω 68 µF 73 Hz 10,000 Ω 68 µF 0.23 Hz 47,000 Ω 68 µF 0.05 Hz As Table 1 indicates, headphone response is adequate and drive into line level inputs (a home stereo for example) is good. The output coupling capacitor required in single-supply, SE mode also places additional constraints on the selection of other components in the amplifier circuit. With the rules described earlier still valid, add the following relationship: 6 TPA6100A2D www.ti.com 1 C B 55 kΩ SLOS269B – JUNE 2000 – REVISED SEPTEMBER 2004 1 C I R I 1 R LC C (8) USING LOW-ESR CAPACITORS Low-ESR capacitors are recommended throughout this application. A real capacitor can be modeled simply as a resistor in series with an ideal capacitor. The voltage drop across this resistor minimizes the beneficial effects of the capacitor in the circuit. The lower the equivalent value of this resistance, the more the real capacitor behaves like an ideal capacitor. 3.3-V VERSUS 1.6-V OPERATION The TPA6100A2D was designed for operation over a supply range of 1.6 V to 3.6 V. There are no special considerations for 1.6-V versus 3.3-V operation as far as supply bypassing, gain setting, or stability. The most important consideration is that of output power. Each amplifier can produce a maxium output voltage swing within a few hundred millivolts of the rails with a 10-kΩ load. However, this voltage swing decreases as the load resistance decreases and the rDS(on) as the output stage transistors becomes more significant. For example, for a 32-Ω load, the maximum peak output voltage with VDD = 1.6 V is approximately 0.7 V with no clipping distortion. This reduced voltage swing effectively reduces the maximum undistorted output power. 7 PACKAGE OPTION ADDENDUM www.ti.com 6-Dec-2006 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Eco Plan (2) Qty TPA6100A2D ACTIVE SOIC D 8 75 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TPA6100A2DGK ACTIVE MSOP DGK 8 80 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TPA6100A2DGKG4 ACTIVE MSOP DGK 8 80 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TPA6100A2DGKR ACTIVE MSOP DGK 8 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TPA6100A2DGKRG4 ACTIVE MSOP DGK 8 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TPA6100A2DR ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TPA6100A2DRG4 ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM Lead/Ball Finish MSL Peak Temp (3) (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. 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