1N4938

1N4938
General Purpose Silicon Rectifier
DO−35 Type Package
Absolute Maximum Ratings: (TA = +25C, Note 1 unless otherwise specified)
Maximum Repetitive Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
Average Rectified Forward Current, IF(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Non−Repetitive Peak Forward Surge Current, IFSM
Pulse Width = 1s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Pulse Width =1s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C
Maximum Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . +300C
Note 1. These ratings are limiting values above which the serviceability of the diode may be impaired
and based on a maximum junction temperature of +200C.
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Breakdown Voltage
VR
IR = 100A
200
−
−
V
Forward Voltage
VF
IF = 100mA
−
−
1
V
Reverse Leakage
IR
VR = 75V
−
−
100
nA
VR = 175V, TJ = +150C
−
−
100
A
VR = 0, f = 1MHz
−
−
5
pF
IF = 30mA, IR = 30mA, Irr = 1mA, RL = 100
−
−
50
ns
Total Capacitance
Reverse Recovery Time
CT
tr
1.000 (25.4)
Min
.200 (5.08)
Max
.022 (.509) Dia Max
Color Band Denotes Cathode
.090 (2.28)
Dia Max