NTE637 Schottky Barrier Diode (Surface Mount) Absolute Maximum Ratings: (Ta = +25°C, Note 1, unless otherwise specified) Repetitive Peak Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Average Rectified Forward Current, IF(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA Non−Repetitive Peak Forward Surge Current (Pulse Width = 1.0s), IFSM . . . . . . . . . . . . . . . 600mA Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 290mW Storage Temperature Range, TSTG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55° to +150°C Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55° to +150°C Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 430°C/W Note 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Electrical Characteristics: (Tc = +25°C, unless otherwise specified) Parameter Symbol Breakdown Voltage g Forward Voltage VR VF Reverse Leakage Total Capacitance Reverse Recovery Time IR CT trr Test Conditions IR = 10µA IF = 0.1mA IF = 1mA IF = 10mA IF = 30mA IF = 100mA VR = 25V VR = 1V, f = 1.0MHz IF = IR = 10mA, IRR = 1.0mA, RL = 100Ω .016 (0.48) K .098 (2.5) Max N.C. A .037 (0.95) .074 (1.9) .051 (1.3) .118 (3.0) Max .043 (1.1) .007 (0.2) Min Typ Max Unit 30 − − − − − − − − − − − − − − − − − − 240 320 400 500 0.8 2 10 5.0 V mV mV mV mV V µA pF ns