Tradeshow Brochure

Vishay Intertechnology, Inc.
LOW AND MEDIUM VOLTAGE
N-CHANNEL MOSFET s
TrenchFET® GEN IV
High-Performance
MOSFETs from
30 V to 60 V
ThunderFET®
High-Performance
MOSFETs from
80 V to 200 V
PowerPAK® SC-70
PowerPAK SC-75
High-Performance
MOSFETs from
60 V to 150 V in
Ultra-Compact,
Thermally
Enhanced
Packages
www.vishay.com
V I S H AY I N T E R T E C H N O L O G Y, I N C .
LOW AND MEDIUM VOLTAGE N-CHANNEL MOSFETs
Focus Products
Single N-Channel MOSFETs - 30 V to 80 V
PowerPAK®
RDS(on) (Ω)
Qg (nC)
VDS (V)
30
LITTLE FOOT®
SO-8 / SO-8L
1212-8 / 1212-8S
ChipFET
SC-70
SO-8
TSOP6
5x6
3x3
3 x 1.9
2x2
5x6
3x3
VGS = 10 V
VGS = 4.5 V
VGS = 10 V
0.001
0.00135
147
66
SiRA00DP
0.002
0.0027
78
34.3
SiRA02DP
0.00215
0.0031
51
22.5
SiRA04DP
SiSA04DN
0.0025
0.0035
51
22.5
SiRA06DP
SiS476DN
0.0028
0.0042
37
17.3
SiRA36DP
0.0034
0.0044
51
22.5
0.0037
0.005
34
15.4
SiRA10DP
SiSA10DN
0.0043
0.006
29.5
13.6
SiRA12DP
SiSA12ADN
0.0051
0.0085
19.4
9.4
SiRA14DP
SiSA14DN
0.0064
0.0085
19.7
8.8
0.0067
0.0098
16.7
8
SiRA34DP
0.0075
0.012
14.3
6.9
SiRA18DP
®
VGS = 4.5 V
Si4010DY
Si5446DU
SiSA18ADN
Increases power density and operates cooler with reduced power loss; RDS(on) down to less than 1 mΩ
40
60
0.002
0.0025
60
28.5
SiR640ADP
0.0024
0.003
56
27.2
SiR642DP
0.0027
0.004
47
21.3
SiR644DP
0.0024
0.0032
58
28
0.0055
0.0075
21.3
9.8
0.0027
0.0035
64
30
0.0042
0.0069
40
18.8
0.008
0.0125
20.8
9.3
0.0085
0.0125
20.8
8.7
0.032
0.052
6.2
3
Si4038DY
SiS488DN
SiR662DP
Si4062DY
SiJ462DP
SiS862DN
SiA442DJ
Increase efficiency for synchronous rectification; low Qgd / Qgs ratio enhances immunity to shoot-through
80
0.0055
0.0087
57
25
SiR826ADP
0.0063
0.0089
47.5
24
SiR880ADP
0.0062
0.0095
47
24
SiJ482DP
0.008
0.0115
35.5
17.1
SiJ478DP
0.0195
0.032
18.1
8.7
0.093
0.126
4.9
2.6
SiS468DN
Si3476DV*
Improves efficiency of isolated DC/DC; PowerPAK SO-8L option offers additional relief under thermal stress
Note
* Target specification, release in Q4 2014
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC
DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V I S H AY I N T E R T E C H N O L O G Y, I N C .
LOW AND MEDIUM VOLTAGE N-CHANNEL MOSFETs
Focus Products
Single N-Channel MOSFETs - 100 V to 150 V
PowerPAK®
RDS(on) (Ω)
Qg (nC)
VDS (V)
1212-8 /
1212-8S
SC-70
SC-75
SO-8
SSOT23 /
SC70-6
5x6
3x3
2x2
1.6 x 1.6
5x6
3x3/2x2
VGS = 4.5 V
VGS = 10 V
VGS = 4.5 V
0.0066
0.0105
53.5
25.2
SiR870ADP
44
26.7
SiR846ADP
SiR882ADP
0.0087
0.0115
39.5
19.5
0.0088
0.012
44.4
20.7
0.0091
100
SO-8 / SO-8L
VGS = 10 V
0.0078
36.9
Si4190ADY
SiJ470DP
0.0108
0.0145
32.8
16.3
SiR876ADP
0.0140
0.0180
27.9
13.9
SiR878ADP
16
10
0.0210
LITTLE FOOT®
0.0230
0.0310
19.6
9.7
0.0235
0.0315
19.1
9.5
0.0830
0.130
6.5
3.5
0.126
0.189
5.2
2.9
0.185
0.310
3.3
1.8
0.200
0.320
3.3
1.8
SiSS40DN
Si7456DDP
Si4056DY
SiS890DN
SiA416DJ
Si2392ADS
SiB456DK
Si1480DH
Reduce all power loss elements in ZVS isolated DC/DC topologies; thermally enhanced solution down to 4 mm² package footprint
150
200
0.018
42.5
0.058
9.5
0.177
5.3
0.029
30
SiR872DP
SiS888DN
SiA446DJ
SiR690DP**
48 % RDS - Qg FOM reduction to improve performance in DC/DC, solar micro inverters, and class-D amplifiers
Note
** Target specification, release in Q1 2015
Dual N-Channel MOSFETs and N & P Complementary MOSFETs
Approximate
Footprint
Package
PowerPAK SO-8
RDS(on) (Ω)
Qg (nC)
Part Number
Configurations
VDS (V)
Si7252DP
Dual
100
0.017
17.5
Si7946ADP*
Dual
150
0.186
5.3
100
0.085
5.2
100
0.057
0.072
7.5
-100
0.183
0.205
24
VGS = 10 V
VGS = 4.5 V
VGS = 10 V
5x6
PowerPAK
1212-8
3x3
SiS990DN
Dual
SO-8
5x6
Si4590DY
N&P
Integrated solution reduces component count in DC/DC conversion and BLDC motors
Note
* Target specification, release in Q4 2014
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC
DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
LATEST TECHNOLOGIES PROVIDE GREATER
THAN 50 % LOWER ON-RESISTANCE
COMPARED TO PREVIOUS GENERATION
Advantages of Vishay Siliconix Low and
Medium Voltage N-Channel MOSFETs
• 30 % lower RDS(on) x Qg FOM enables lower power losses than previous
generation
• Exceptionally low Qgd / Qgs ratios enhance immunity to shoot-through
• Includes thermally enhanced PowerPAK® packaging for increased
power densities
• A wide range of compact package sizes for optimization in a variety of
applications
For the Following Applications
Vishay’s new n-channel
MOSFETs with optimized RDS(on),
Qgd and QOSS increase efficiency
by balancing conduction and
switching power losses
• DC/DC converters
• DC/AC inverters
• Synchronous rectification
• ORing, eFuse
Providing high-performance, thermally
enhanced power stage solutions for today’s
power conversion topologies
An extensive range of solutions to achieve
high efficiency and reliability
Useful
Links
• www.vishay.com/mosfets/trenchfet-gen-iv/
• www.vishay.com/mosfets/medium-voltage/
Vishay is your true one-stop shop for
building blocks in power conversion by
providing high performance MOSFETs
from 30 V to 650 V and power passive
components.
A WORLD OF
SOLUTIONS
VMN-MS6926-1406