Tradeshow Brochure

Vishay Intertechnology, Inc.
P owerPAIR ® MOSFET s
PowerPAIR 3 x 3
Provides Best
Efficiency in
the Industry in
Compatible 3 x 3
Footprints
PowerPAIR 6 x 3.7
26 % Smaller
with Comparable
Performance to a
6 x 5 mm2 Device
PowerPAIR 6 x 5
Achieves High
Efficiency in
High-Current,
Multi-Phase
Synchronous
Buck
www.vishay.com
V I S H AY I N T E R T E C H N O L O G Y, I N C .
PowerPAIR® MOSFETs
Focus Products
Asymmetric Dual N-Channel MOSFETs - PowerPAIR®
Package
Form
Factor
Part Number
SiZ340DT
3x3
SiZ342DT
Ch
VDS
(V)
VGS
(V)
1
30
2
30
30
1
2
RDS(on) (Ω) Max.
Qg (nC) Typ.
VGS =
4.5 V
Qgs Typ.
(nC)
VGS =
10 V
VGS =
4.5 V
VGS =
10 V
20
0.0095
0.0137
12.3
5.6
2.3
20
0.0051
0.007
22.6
10.1
4.2
20
0.0111
0.0138
10
4.5
2.1
Qgd Typ.
(nC)
ID (A)
TA =
25 °C
TA =
70 °C
Rg Typ. (Ω)
FOM at 4.5 V
Typ.
1
15.6
12.4
1.7
62
1.8
22.6
18.1
1.3
59
0.7
15.6
12.4
1.4
50
Increases power density and provides superior performance in high switching frequencies
SiZ710DT
6 x 3.7
SiZ728DT
SiZ730DT
1
20
20
0.0068
0.009
11.5
6.9
2.4
1.7
16.0
15.0
1.3
50
2
20
20
0.0033
0.0043
38
18.2
6.6
4.8
30.0
24.0
0.8
62
1
25
20
0.0077
0.011
17
8.1
3
2.5
16.0
14.2
1
97
2
25
20
0.0035
0.0048
42.5
20.5
7.7
6.4
28.8
23.0
0.8
19
1
30
20
0.0093
0.013
15.6
7.7
2.6
3
12.9
10.3
1
137
2
30
20
0.0039
0.0053
43
21.2
7
7.4
26.4
21.1
0.8
23
80
26 % smaller than 6 x 5 mm² package without sacrificing performance for high current DC/DC
SiZ916DT
SiZ920DT
SiZ918DT
6x5
SiZ900DT
SiZ902DT
SiZ904DT
1
30
20
0.0064
0.01
17
7.2
3.6
0.94
16
15.5
2.5
2
30
20
0.0013
0.00175
106
45
23.2
5
40
38.8
1
2
1
30
20
0.0071
0.0089
22.3
10.5
5.1
2.8
32
17
1.6
66
2
30
20
0.003
0.0035
60
29
10
9.5
32
26
0.6
10
1
30
20
0.012
0.0145
14
6.8
2.6
1.9
14.3
11.4
2
174
2
30
20
0.0037
0.0045
14
6.8
2.6
1.9
26.0
21.0
1.1
16
1
30
20
0.0072
0.0092
29
13.5
5.8
3.1
19
15.5
2.4
69
2
30
20
0.0039
0.0047
73
34
15
7.3
28
22
0.9
18
1
30
20
0.012
0.0145
14
6.8
2.6
1.9
14.3
11.4
2
174
2
30
20
0.0064
0.0083
43
21
8.1
6.5
16
16
1.5
56
1
30
20
0.024
0.03
8
3.8
1.4
1.1
9.5
7.6
3.2
720
2
30
20
0.0135
0.017
15.4
7.3
2.3
2.2
14.5
11.6
0.8
230
TA =
25 °C
TA =
70 °C
Rg Typ. (Ω)
FOM at 4.5 V
Typ.
Meticulously tuned MOSFET pairing increases efficiency in high-current synchronous buck converters
Asymmetric Dual N-Channel MOSFETs Plus Integrated Schottky - PowerPAIR
Package
Form
Factor
Part Number
6 x 3.7
SiZ790DT
Ch
VDS
(V)
VGS
(V)
1
30
2
30
RDS(on) (Ω) Max.
Qg (nC) Typ.
ID (A)
Qgs Typ.
(nC)
Qgd Typ.
(nC)
7.7
2.6
3
12.9
10.3
1
137
17
5.7
5
23.4
18.7
0.9
28
VGS =
10 V
VGS =
4.5 V
VGS =
10 V
VGS =
4.5 V
20
0.0093
0.013
15.6
20
0.0047
0.0059
36
A compact solution that reduces voltage transients and EMI issues for high-current synchronous buck converters
6x5
SiZ914DT
1
30
20
0.0064
0.01
2
30
20
0.00137 0.00194
17
7.2
3.6
0.94
16
15.5
2.5
80
66
30.1
10.9
3.8
40
38.8
1
3
Provides the highest overall efficiency, noise immunity, and current handling capability
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC
DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V I S H AY I N T E R T E C H N O L O G Y, I N C .
PowerPAIR® MOSFETs
95 %
94 %
93 %
92 %
91 %
90 %
89 %
88 %
87 %
86 %
85 %
84 %
Measured Efficiency at 12 VIN, 1.5 VOUT,
300 kHz, 1.2 µH
Measured Efficiency at 12 VIN, 1.5 VOUT,
1000 kHz, 1.2 µH
93 %
92 %
91 %
Efficiency
Efficiency
Focus Products
90 %
89 %
88 %
87 %
86 %
85 %
84 %
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16
0
1
2
3
4
5
Load Current (A)
SiZ340DT
6 7 8 9 10 11 12 13 14 15 16
Load Current (A)
SiZ340DT
Competitor
Competitor
1. Improves efficiency over designs with TrenchFET® Gen III or similar devices from competitors
2. Demonstrates high efficiency at switching frequencies from 300 kHz to 1 MHz
3. Reduced power loss enables design to operate cooler
12 VIN / 1.8 VOUT / 450 kHz - PowerPAIR HS Temp. vs Load
PowerPAIR 3 x 3 TrenchFET IV vs. TrenchFET III
110.0
105.0
100.0
95.0
90.0
85.0
80.0
75.0
70.0
65.0
60.0
55.0
50.0
45.0
40.0
35.0
30.0
25.0
SiZ300DT (GEN III)
SiZ340DT (GEN IV)
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
Output Load (A)
1. Reduces operating temperature by 30 °C at 12 A output load current
2. Increases power density by 25 % and allows more output per DC/DC
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC
DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
CO-PACKAGED MOSFETS USE LESS SPACE
AND INCREASE PERFORMANCE OVER
TWO DISCRETES
Advantages of Vishay PowerPAIR®
MOSFETs
• Optimized high- and low-side MOSFET pairing improves
efficiency
• Integrated solution reduces component count, saves space,
and simplifies layout
• Increased power density for high-current synchronous buck
converters
• Reduces parasitic inductance from PCB traces, increasing
efficiency and reducing ringing
Vishay PowerPAIR products
leverage the latest TrenchFET®
technology with low RDS(on), Qg,
and Qgd to increase power density
of the DC/DC converters and
minimize wasted power
For the Following Applications
• Synchronous buck DC/DC converters
• System power and DDR memories
• Point-of-load (POL)
Increase power density to use less PCB real
estate for the MOSFET power stage
Increase efficiency across the full range of
load types to save power and run cooler in
synchronous buck converters
Useful
Links
• www.vishay.com/mosfets/powerpair-package/
Vishay’s integration level ranges from
high-performance discrete power
MOSFETs to integrated PowerPAIR,
DrMOS, and microBUCK® solutions
A WORLD OF
SOLUTIONS
VMN-MS6927-1406