Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UT131
TRIAC
TRIAC LOGIC LEVEL
DESCRIPTION

1
Passivated, sensitive gate triac in a plastic envelope, intended
for use in general purpose bidirectional switching and phase control
applications. These devices are intended to be interfaced directly to
microcontrollers. Logic integrated circuits and other low power gate
trigger circuits.

SYMBOL
SOT-223
1
MT2
TO-92
G
MT1

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UT131G-x-AA3-R
UT131L-x-T92-B
UT131G -x-T92-B
UT131L-x-T92-K
UT131G -x-T92-K
UT131G-x-AA3-R
(1)Packing Type
(2)Package Type
(3)Peak Voltage
(4)Green Package

Package
SOT-223
TO-92
TO-92
Pin Assignment
1
2
3
MT1
MT2
GATE
MT1
GATE
MT2
MT1
GATE
MT2
Packing
Tape Reel
Tape Box
Bulk
(1) B: Tape Reel, K: Bulk, R: Tape Reel
(2) AA3: SOT-223, T92: TO-92
(3) 5: 500V, 6: 600V, 8: 800V
(4) G: Halogen Free and Lead Free, L: Lead Free
MARKING
SOT-223
TO-92
UTC
UT131
Repetitive Peak
Off-State Voltage
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
1
L: Lead Free
G: Halogen Free
Data Code
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QW-R401-006.H
UT131

TRIAC
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
UT131-5
500
V
Repetitive Peak Off-State Voltage (Note 2) UT131-6
VDRM
600
V
UT131-8
800
V
RMS On-State Current, Full Sine Wave; Tlead≤51°C
IT(RMS)
1
A
16
A
t=20ms
Non-Repetitive Peak On-State Current
ITSM
(Full Sine Wave; TJ=25℃ Prior to Surge) t=16.7ms
17.6
A
Circuit Fusing
t=10ms
I2 t
1.28
A2 s
50
A/s
T2 + G +
Repetitive Rate of Rise of On-State
T2 + G 50
A/s
Current after Triggering
dIT/dt
T2 - G 50
A/s
ITM=1.5A, IG=0.2A, dIG/dt=0.2A/s
T2 - G +
10
A/s
Peak Gate Voltage
VGM
5
V
Peak Gate Current
IGM
2
A
Peak Gate Power
PGM
5
W
Average Gate Power (over any 20ms period)
PG(AV)
0.5
W
Junction Temperature
TJ
+125
°C
Storage Temperature
TSTG
-40 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac
may switch to the on-state. The rate of rise of current should not exceed 3 A/μs.

THERMAL DATA
PARAMETER
Junction to Lead
SYMBOL
Full Cycle
Half Cycle
Junction to Ambient (Note)
Note: PCB mounted; lead length=4mm

θJA
UNIT
K/W
K/W
K/W
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
Gate Trigger Current
IGT
Latching Current
IL
Holding Current
On -State Voltage
IH
VT
Gate Trigger Voltage
VGT
Off-State Leakage Current

θJLEAD
RATINGS
60
80
150
ID
TEST CONDITIONS
T2 + G +
T2 + G VD=12V, IT=0.1A
T2 – G T2 – G +
T2 + G +
T2 + G VD=12V, IGT=0.1A
T2 – G T2 – G +
VD=12V, IGT=0.1A
IT=2.0A
VD=12V, IT=0.1A
VD=400V, IT=0.1A, TJ=125℃
VD=VDRM(MAX), TJ=125℃
MIN
TYP
0.4
1.3
1.4
3.8
1.2
4.0
1.0
2.5
1.3
1.2
0.7
0.3
0.1
0.2
MAX
3
3
5
7
5
8
5
8
5
1.5
1.5
0.5
UNIT
mA
mA
mA
mA
mA
mA
mA
mA
mA
V
V
V
mA
DYNAMIC CHARACTERISTICS (TJ=25℃, unless otherwise specified)
PARAMETER
SYMBOL
Critical Rate of Rise of off-state Voltage
dVD/dt
Gate Controlled Turn-on Time
tGT
TEST CONDITIONS
VDM=67% VDRM(MAX), TJ=125℃
Exponential waveform, RGK=1kΩ
ITM=1.5A, VD=VDRM(MAX),
IG=0.1A dIG/dt=5A/s
UNISONIC TECHNOLOGIES CO., LTD
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MIN
TYP
MAX
UNIT
5
15
V/s
2
s
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UT131
TRIAC
Maximum on-state
Dissipation, PD/W
Maximum Permissible Non-Repetitive
Peak On-State Current, ITSM/A
TYPICAL CHARACTERISTICS

Maximum Permissible Non-Repetitive
Peak On-State Current vs. Number of Cycles, for
Sinusoidal Currents
Maximum Permissible RMS Current IT(RMS)
vs. Lead Temperature
1.2
IT
10
ITSM
time
8
6
TJ initial=25℃max
4
2
1
100
10
Number of Cycles at 50Hz
108℃
1
0.8
0.6
0.4
0.2
0
-50
1000
0
50
100
Lead Temperature, Tsp/℃
150
Normalised Gate Trigger
Voltage, VGT(TJ)/VGT(25℃)
Maximum Permissible Repetitive
RMS on-state Current, IT(RMS)/A
0
Maximum Permissible RMS
Current, IT(RMS)/A
Maximum Permissible NonRepetitive Peak On-State
Current, ITSM/A
12
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UT131
TRIAC
TYPICAL CHARACTERISTICS(Cont.)

Normalised Gate Trigger Current
vs. Junction Temperature
Normalised Latching Current
vs. Junction Temperature
3
T2+G+
T2+GT2-GT2-G+
2.5
2
Normalised Latching
Current, IL(TJ)/IL(25℃)
Normalised Gate Trigger
Current, IGT(TJ)/IGT(25℃)
3
1.5
1
2.5
2
1.5
1
0.5
0.5
0
0
-50
0
50
100
Junction Temperature, TJ/℃
150
-50
0
50
100
150
Junction Temperature, TJ/℃
Typical Critical Rate of Rise of off-state
Voltage vs. Junction Temperature
Transient Thermal Impedance
vs. Pulse Width
100
1000
10
unidirectional
1
100
bidirectional
PD
0.1
10
tp
t
0.01
10us 0.1ms 1ms 10ms 0.1s
1s
1
10s
Pulse Width, tp/s
UNISONIC TECHNOLOGIES CO., LTD
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0
50
100
150
Junction Temperature, TJ/℃
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UT131
TRIAC
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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