BT169B

UNISONIC TECHNOLOGIES CO., LTD
BT169
SCR
SCRS

DESCRIPTION
1
Passivated, sensitive gate thyristors in a plastic envelope,
intended for use in general purpose switching and phase control
applications. These devices are intended to be interfaced
directly to microcontrollers, logic integrated circuits and other
low power gate trigger circuits.

SYMBOL
SOT-223
1
TO-92

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
BT169BL-T92-B
BT169BG-T92-B
BT169BL-T92-K
BT169BG-T92-K
BT169DL-T92-B
BT169DG-T92-B
BT169DL-T92-K
BT169DG-T92-K
BT169EL-T92-B
BT169EG-T92-B
BT169EL-T92-K
BT169EG-T92-K
BT169GL-T92-B
BT169GP-T92-B
BT169GL-T92-K
BT169GP-T92-K
BT169HG-AA3-R
BT169HL-T92-B
BT169HG-T92-B
BT169HL-T92-K
BT169HG-T92-K
Note: Pin Assignment: K: Cathode
G: Gate
A: Anode
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Copyright © 2014 Unisonic Technologies Co., Ltd
Package
TO-92
TO-92
TO-92
TO-92
TO-92
TO-92
TO-92
TO-92
SOT-223
TO-92
TO-92
Pin Assignment
1
2
3
K
G
A
K
G
A
K
G
A
K
G
A
K
G
A
K
G
A
K
G
A
K
G
A
K
A
G
K
G
A
K
G
A
Packing
Tape Box
Bulk
Tape Box
Bulk
Tape Box
Bulk
Tape Box
Bulk
Tape Reel
Tape Box
Bulk
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QW-R301-015.D
BT169

SCR
MARKING
Package
MARKING
SOT-223
UTC
TO-92
Repetitive Peak
Off-State Voltages
BT169
1
L: Lead Free
G: Halogen Free
Data Code
TO-92
(For BT169G)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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BT169

SCR
QUICK REFERENCE DATA
PARAMETER
Repetitive Peak Off-State Voltages
Average On-State Current
RMS On-State Current
Non-Repetitive Peak On-State Current

SYMBOL
VDRM, VRRM
IT(AV)
IT(RMS)
ITSM
BT169B BT169D BT169E BT169G BT169H
MAX
MAX
MAX
MAX
MAX
200
400
500
600
800
0.5
0.5
0.5
0.5
0.5
0.8
0.8
0.8
0.8
0.8
8
8
8
8
8
UNIT
MAX
V
A
A
A
SYMBOL
RATINGS
200
400
500
600
800
5
5
1
UNIT
RATINGS
150
180
UNIT
C/W
C/W
ABSOLUTE MAXIMUM RATINGS
PARAMETER
BT169B
BT169D
V
Repetitive Peak Off-State Voltages(Note 2) BT169E
VDRM,VRRM
BT169G
BT169H
Peak Gate Voltage
VGM
V
Peak Reverse Gate Voltage
VRGM
V
Peak Gate Current
IGM
A
Average On-State Current
IT(AV)
0.5
A
(Half Sine Wave, TLEAD≦83C)
RMS On-State Current (All Conduction Angles)
IT(RMS)
0.8
A
t=10ms
8
A
Non-Repetitive Peak On-State Current
ITSM
(Half Sine Wave, TJ=25C Prior to Surge) t=8.3ms
9
A
I2t For Fusing (t=10ms)
I2 t
0.32
A2 S
Repetitive Rate of Rise of On-State Current After
dIT/dt
50
A/s
Triggering (ITM=2A,IG=10mA, dIG/dt=100mA/s)
Peak Gate Power
PGM
2
W
Average Gate Power (Over any 20 ms period)
PG(AV)
0.1
W
Junction Temperature
TJ
+125
C
Storage Temperature
TSTG
-40 ~ +150
C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the
thyristor may switch to the on-state. The rate of rise of current should not exceed 15 A/μs.

THERMAL DATA
PARAMETER
Thermal Resistance Junction to Ambient
(typ.)
Note: pcb mounted, lead length=4mm
SYMBOL
SOT-223
TO-92
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
θJA
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BT169

SCR
ELECTRICAL CHARACTERISTICS (TJ=25C, unless otherwise specified)
PARAMETER
STATIC CHARACTERISTICS
Gate Trigger Current
Latching Current
Holding Current
On-State Voltage
SYMBOL
TSET CONDITIONS
MIN
IGT
IL
IH
VT
VD=12V, IT=10 mA, gate open circuit
VD=12V, IGT=0.5mA, RGK=1k
VD=12V,IGT=0.5mA, RGK=1k
IT=1A
VD=12V, IT=10mA, gate open circuit
VD=VDRM(MAX), IT=10mA, TJ=125C, gate
open circuit
VD=VDRM(MAX), VR=VRRM(MA\X),
TJ=125C, RGK=1k
25
Gate Trigger Voltage
VGT
Off-State Leakage Current
ID,IR
DYNAMIC CHARACTERISTICS
Ciritical Rate of Rise of Off-State
Voltage
dVD/dt
Gate Controlled Turn-On Time
tgt
Circuit Commutated Turn-Off
Time
tq
VDM=67% VDRM(MAX), TJ=125C,
exponential waveform, RGK=1k
ITM=2A,VD=VDRM(MAX), IG=10mA,
dIG/dt=0.1A/s
VD=67% VDRM(MAX), TJ=125C,
ITM=1.6A,VR=35V, dITM/dt=30A/s,
VD/dt=2V/s, RGK=1k
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
0.2
500
TYP
MAX
UNIT
2
2
1.2
55
6
5
1.35
A
mA
mA
V
0.5
0.3
0.8
V
0.05
0.1
mA
800
V/s
2
s
100
s
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UNISONIC TECHNOLOGIES CO., LTD
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VGT(TJ)
VGT(25°C)
Maximum Permissible Repetitive RMS
On-State Current, IT(RMS) (A)
Maximum Permissible Non-Repetitive
Peak On-State Current, ITSM (A)
Maximnum Permissible Non-Repetitive Peak
On-State Current, ITSM (A)
Tc(MAX) (C)
Maximum On-State Dissipation, PD (W)

Normalised Gate Trigger Voltage
Maximum Permissible RMS Current,
IT(RMS)
BT169
SCR
TYPICAL CHARACTERISTICS
QW-R301-015.D
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BT169

SCR
TYPICAL CHARACTERISTICS(Cont.)
Typical And Maximum On-State Characteristic
5
3.0
TJ=125°C - - TJ= 25°C
4
2.5
VOUT=1.067V
Rs=0.187
3
2.0
IT (A)
Normalised Gate Trigger Current
IGT(TJ)
VGT(25°C)
Normalised Gate Trigger Current vs. Junction
Temperature
1.5
1.0
typ
max
2
1
0.5
0
0
-50
0
50
100
0
150
1.0
1.5
2.0
2.5
VT (V)
Normalised Holding Current
IH(TJ)
IH(25°C)
Typical, Critical Rate Of Rise Of Off-State
Voltage, dVD/dt(V/us)
Normalised Latching Current
IL(TJ)
IL(25°C)
Transient Thermal Impedance,
θJ-LEAD (°C/W)
Junction Temperature, TJ (°C)
0.5
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BT169
SCR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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