NTE5638

NTE5638, NTE5638−06, NTE5638−08
TRIAC − 8A
Isolated Tab
Description:
The NTE5638 is an 8 Amp TRIAC in a TO220 type package designed to be driven directly with IC and
MOS devices and features proprietary, void−free glass passivated chips.
This device is a bi−directional triode thyristor and may be switched from off−state to conduction for
either polarity of applied voltage with positive or negative gate trigger current. The NTE5638 is designed for control applications in lighting, heating, cooling and static switching relays.
Absolute Maximum Ratings:
Repetitive Peak Off−State Voltage (Gate Open, TJ = +110°C, Note 1), VDRM
NTE5638 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
NTE5638−06 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
NTE5638−08 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
RMS On−State Current (TC = +80°C, Conduction Angle of 360°C), IT(RMS) . . . . . . . . . . . . . . . . . . 8A
Peak Surge (Non−Repetitive) On−State Current (One Cycle, 50Hz or 60Hz), ITSM . . . . . . . . . . 80A
Peak Gate−Trigger Current (3µs Max), IGTM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Peak Gate−Power Dissipation (IGT ≤ IGTM for 3µs Max), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W
Average Gate−Power Dissipation, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW
Operating Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40° to +110°C
Typical Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5°C/W
Note 1. All values apply in either direction.
Electrical Characteristics: (TC = +25°C, Maximum Ratings unless otherwise specified)
Parameter
Symbol
Test Conditions
Peak Off−State Current
IDRM
VDRM = Max, Gate Open, TJ = +110°C
−
−
0.5
mA
Max. On−State Voltage
VTM
IT = 8A
−
−
1.6
V
Gate Open, Note 1
−
−
25
mA
VD = VDRM, Gate Open, TC = +100°C,
Note 1
−
30
−
V/µs
−
2
−
V/µs
−
−
10
mA
DC Holding Current
Critical Rate−of−Rise of Off−State
Voltage
Critical Rate−of−Rise of Commutation
Voltage
DC Gate Trigger Current
T2 (+) Gate (+), T2 (−) Gate (−)
T2 (+) Gate (−), T2 (−) Gate (+)
IH
Critical
dv/dt
Commutation VD = VDRM, IT = 8A, TC = +80°C,
dv/dt
Gate Unenergized, Note 1
IGT
Note 1. All values apply in either direction.
VD = 12V, RL = 60Ω
Min Typ Max Unit
Electrical Characteristics (Cont’d): (TC = +25°C, Maximum Ratings unless otherwise specified)
Parameter
Symbol
DC Gate Trigger Voltage
VGT
Gate−Controlled Turn−On Time
tgt
Test Conditions
VD = 12V, RL = 60Ω
−
−
2.2
V
VD = VDRM, IGT = 80mA, tr = 0.1µs,
iT = 10A (Peak)
−
2.2
−
µs
.420 (10.67)
Max
.110 (2.79)
Isolated
.147 (3.75)
Dia Max
.500
(12.7)
Max
.250 (6.35)
Max
.500
(12.7)
Min
.070 (1.78) Max
MT1
.100 (2.54)
Min Typ Max Unit
Gate
MT2