NTE NTE5661

NTE5661
TRIAC, 10 Amp
Description:
The NTE5661 is a TRIAC in a TO64 type stud mount package designed primarily for full–wave AC
control applications such as light dimmers, motor controls, heating controls, power supplies or wherever full–wave silicon gate controlled solid–state devices are needed. TRIAC type thyristors switch
from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering.
Features:
D Low “ON” Voltage
D Gate Triggering Guaranteed in Four Modes
Absolute Maximum Ratings:
Repetitive Peak Off–State Voltage (TJ = +100°C, Note 1), VDRM . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
On–State RMS Current (TC = +75°C), ITRMS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Peak Surge Current (One Full Cycle, 60Hz, TJ = –40° to +100°C), ITSM . . . . . . . . . . . . . . . . . . 100A
Circuit Fusing Considerations (TJ = –40° to +100°C, t = 1.0 to 8.3ms), I2t . . . . . . . . . . . . . . 40A2sec
Peak Gate Power, PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W
Average Gate Power, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5W
Peak Gate Current, IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +100°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2°C/W
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50°C/W
Stud Torque . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 in. lb.
Note 1. Ratings apply for open gate conditions. Thyristor devices shall not be tested with a constant
current source for blocking capability such that the voltage applied exceeds the rated blocking voltage.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Peak Blocking Current (Either Direction)
IDRM
On–State Voltage (Either Direction)
VTM
Gate Trigger Current, Continuous DC
All Modes
IGT
Test Conditions
Min
Typ
VDRM = 50V, TJ = +100°C, Gate Open
–
–
2.0
mA
ITM = 14A Peak
–
1.3
1.8
V
Main Terminal Voltage = 12V, RL = 100Ω
–
–
40
mA
–
–
50
mA
MT2 (+), G (+); MT2 (–), G (–)
Gate Trigger Voltage, Continuous DC
Max Unit
VGT
Main Terminal Voltage = 12V, RL = 100Ω
–
0.9
2.0
V
VGD
Main Terminal Voltage = 50V, RL = 100Ω,
TJ = +100°C
0.2
–
–
V
Holding Current (Either Direction)
IH
Main Terminal Voltage = 12V,
Gate Open, Initiating Current = 100mA
–
–
30
mA
Turn–On Time
ton
ITM = 14A, IGT = 100mA
–
1.5
–
µs
VDRM = 50V, TJ = +75°C, Gate Open
–
5.0
–
V/µs
Blocking Voltage Application Rate
at Commutation
dv/dt
.431
(10.98
Max
Gate
MT1
.855
(21.7)
Max
.125 (3.17) Max
.453
(111.5)
Max
MT2
10–32 UNF–2A